• ### Full-dimensional Quantum Dynamics of SiO in Collision with H$_2$(1802.04702)

Jan. 25, 2018 physics.chem-ph, astro-ph.GA
We report the first full-dimensional potential energy surface (PES) and quantum mechanical close-coupling calculations for scattering of SiO due to H$_2$. The full-dimensional interaction potential surface was computed using the explicitly correlated coupled-cluster (CCSD(T)-F12b) method and fitted using an invariant polynomial approach. Pure rotational quenching cross sections from initial states $v_1=0$, $j_1$=1-5 of SiO in collision with H$_2$ are calculated for collision energies between 1.0 and 5000 cm$^{-1}$. State-to-state rotational rate coefficients are calculated at temperatures between 5 and 1000 K. The rotational rate coefficients of SiO with para-H$_2$ are compared with previous approximate results which were obtained using SiO-He PESs or scaled from SiO-He rate coefficients. Rovibrational state-to-state and total quenching cross sections and rate coefficients for initially excited SiO($v_1=1, j_1$=0 and 1) in collisions with para-H$_2$($v_2=0,j_2=0$) and ortho-H$_2$($v_2=0,j_2=1$) were also obtained. The application of the current collisional rate coefficients to astrophysics is briefly discussed.
• ### The DArk Matter Particle Explorer mission(1706.08453)

The DArk Matter Particle Explorer (DAMPE), one of the four scientific space science missions within the framework of the Strategic Pioneer Program on Space Science of the Chinese Academy of Sciences, is a general purpose high energy cosmic-ray and gamma-ray observatory, which was successfully launched on December 17th, 2015 from the Jiuquan Satellite Launch Center. The DAMPE scientific objectives include the study of galactic cosmic rays up to $\sim 10$ TeV and hundreds of TeV for electrons/gammas and nuclei respectively, and the search for dark matter signatures in their spectra. In this paper we illustrate the layout of the DAMPE instrument, and discuss the results of beam tests and calibrations performed on ground. Finally we present the expected performance in space and give an overview of the mission key scientific goals.
• ### Testing Bell inequalities with circuit QEDs by joint spectral measurements(1101.2550)

Jan. 13, 2011 quant-ph
We propose a feasible approach to test Bell's inequality with the experimentally-demonstrated circuit QED system, consisting of two well-separated superconducting charge qubits (SCQs) dispersively coupled to a common one-dimensional transmission line resonator (TLR). Our proposal is based on the joint spectral measurements of the two SCQs, i.e., their quantum states in the computational basis $\{|kl>,\,k,l=0,1\}$ can be measured by detecting the transmission spectra of the driven TLR: each peak marks one of the computational basis and its relative height corresponds to the probability superposed. With these joint spectral measurements, the generated Bell states of the two SCQs can be robustly confirmed without the standard tomographic technique. Furthermore, the statistical nonlocal-correlations between these two distant qubits can be directly read out by the joint spectral measurements, and consequently the Bell's inequality can be tested by sequentially measuring the relevant correlations related to the suitably-selected sets of the classical local variables $\{\theta_j,\theta_j', j=1,2\}$. The experimental challenges of our proposal are also analyzed.
• ### Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors(cond-mat/0004082)

June 28, 2001 cond-mat.mes-hall
The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calculated analytically at high temperatures and numerically at low temperatures. The F-F-F magneto-resistance is enhanced by higher order tunneling processes at low temperatures in the 'off' state when the induced charges vanishes. In contrast, in the 'on' state near resonance the magneto-resistance ratio is a non-monotonic function of the inverse temperature.
• ### Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime(cond-mat/9908061)

Dec. 11, 1999 cond-mat.mes-hall
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.
• ### Circuit Effect On The Current-Voltage Characteristics Of Ultrasmall Tunnel Junctions(cond-mat/9903231)

March 15, 1999 cond-mat.mes-hall
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source. We have shown that via the renormalized charging energy and the renormalized environment conductance, our nonperturbative expressions of the total action can be mapped onto the corresponding perturbative formulas. This provides a straightforward way to go beyond the perturbation theory. For the impedance being a pure resistance, we have calculated the conductance for various voltages and temperatures, and the results agree very well with experiments.
• ### Charging Ultrasmall Tunnel Junctions in Electromagnetic Environment(cond-mat/9711260)

Nov. 25, 1997 cond-mat.mes-hall
We have investigated the quantum admittance of an ultrasmall tunnel junction with arbitrary tunneling strength under an electromagnetic environment. Using the functional integral approach a close analytical expression of the quantum admittance is derived for a general electromagnetic environment. We then consider a specific controllable environment where a resistance is connected in series with the tunneling junction, for which we derived the dc quantum conductance from the zero frequency limit of the imaginary part of the quantum admittance. For such electromagnetic environment the dc conductance has been investigated in recent experiments, and our numerical results agree quantitatively very well with the measurements. Our complete numerical results for the entire range of junction conductance and electromagnetic environmental conductance confirmed the few existing theoretical conclusions.