
A zerotemperature magneticfielddriven superconductor to insulator
transition (SIT) in quasitwodimensional superconductors is expected to occur
when the applied magneticfield crosses a certain critical value. A fundamental
question is whether this transition is due to the localization of Cooper pairs
or due to the destruction of them. Here we address this question by studying
the SIT in amorphous WSi. Transport measurements reveal the localization of
Cooper pairs at a quantum critical field B_c^1 (Boseinsulator), with a product
of the correlation length and dynamical exponents zv~4/3 near the quantum
critical point (QCP). Beyond B_c^1, superconducting fluctuations still persist
at finite temperatures. Above a second critical field B_c^2>B_c^1, the Cooper
pairs are destroyed and the film becomes a Fermiinsulator. The different
phases all merge at a tricritical point at finite temperatures with zv=2/3. Our
results suggest a sequential superconductor to Bose insulator to Fermi
insulator phase transition, which differs from the conventional scenario
involving a single quantum critical point.

We study magnitudes and temperature dependences of the electronelectron and
electronphonon interaction times which play the dominant role in the formation
and relaxation of photon induced hotspot in two dimensional amorphous WSi
films. The time constants are obtained through magnetoconductance measurements
in perpendicular magnetic field in the superconducting fluctuation regime and
through timeresolved photoresponse to optical pulses. The excess
magnetoconductivity is interpreted in terms of the weaklocalization effect and
superconducting fluctuations. AslamazovLarkin, and MakiThompson
superconducting fluctuation alone fail to reproduce the magnetic field
dependence in the relatively high magnetic field range when the temperature is
rather close to Tc because the suppression of the electronic density of states
due to the formation of short lifetime Cooper pairs needs to be considered. The
time scale {\tau}_i of inelastic scattering is ascribed to a combination of
electronelectron ({\tau}_(ee)) and electronphonon ({\tau}_(eph))
interaction times, and a characteristic electronfluctuation time
({\tau}_(efl)), which makes it possible to extract their magnitudes and
temperature dependences from the measured {\tau}_i. The ratio of
phononelectron ({\tau}_(phe)) and electronphonon interaction times is
obtained via measurements of the optical photoresponse of WSi microbridges.
Relatively large {\tau}_(eph)/{\tau}_(phe) and {\tau}_(eph)/{\tau}_(ee)
ratios ensure that in WSi the photon energy is more efficiently confined in the
electron subsystem than in other materials commonly used in the technology of
superconducting nanowire singlephoton detectors (SNSPDs). We discuss the
impact of interaction times on the hotspot dynamics and compare relevant
metrics of SNSPDs from different materials.

In a recent publication we have proposed a numerical model that describes the
detection process of optical photons in superconducting nanowire singlephoton
detectors (SNSPD). Here, we review this model and present a significant
improvement that allows us to calculate more accurate current distributions for
the inhomogeneous quasiparticle densities occurring after photon absorption.
With this new algorithm we explore the detector response in standard NbN SNSPD
for photons absorbed offcenter and for 2photon processes. We also discuss the
outstanding performance of SNSPD based on WSi. Our numerical results indicate a
different detection mechanism in WSi than in NbN or similar materials.