• ### Electronic effect of doped oxygen atoms in Bi2201 superconductors determined by scanning tunneling microscopy(1803.03400)

April 3, 2018 cond-mat.supr-con
The oxygen dopants are essential in tuning electronic properties of Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+\delta}$ superconductors. Here we apply the technique of scanning tunneling microscopy and spectroscopy to study the influence of oxygen dopants in an optimally doped Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ and an overdoped Bi$_{2-y}$Pb$_y$Sr$_2$CuO$_{6+\delta}$. In both samples, we find that interstitial oxygen atoms on the SrO layers dominate over the other two forms of oxygen dopants, oxygen vacancies on the SrO layers and interstitial oxygen atoms on the BiO layers. The hole doping is estimated from the oxygen concentration, as compared to the result extracted from the measured Fermi surface. The precise spatial location is employed to obtain a negative correlation between the oxygen dopants and the inhomogeneous pseudogap.
• ### Electronic structure of heavy fermion system CePt2In7 from angle-resolved photoemission spectroscopy(1706.05794)

June 19, 2017 cond-mat.str-el
We have carried out high-resolution angle-resolved photoemission measurements on the Cebased heavy fermion compound CePt2In7 that exhibits stronger two-dimensional character than the prototypical heavy fermion system CeCoIn5. Multiple Fermi surface sheets and a complex band structure are clearly resolved. We have also performed detailed band structure calculations on CePt2In7. The good agreement found between our measurements and the calculations suggests that the band renormalization effect is rather weak in CePt2In7. A comparison of the common features of the electronic structure of CePt2In7 and CeCoIn5 indicates that CeCoIn5 shows a much stronger band renormalization effect than CePt2In7. These results provide new information for understanding the heavy fermion behaviors and unconventional superconductivity in Ce-based heavy fermion systems.
• ### Electronic Evidence for Type II Weyl Semimetal State in MoTe2(1604.01706)

Topological quantum materials, including topological insulators and superconductors, Dirac semimetals and Weyl semimetals, have attracted much attention recently for their unique electronic structure, spin texture and physical properties. Very lately, a new type of Weyl semimetals has been proposed where the Weyl Fermions emerge at the boundary between electron and hole pockets in a new phase of matter, which is distinct from the standard type I Weyl semimetals with a point-like Fermi surface. The Weyl cone in this type II semimetals is strongly tilted and the related Fermi surface undergos a Lifshitz transition, giving rise to a new kind of chiral anomaly and other new physics. MoTe2 is proposed to be a candidate of a type II Weyl semimetal; the sensitivity of its topological state to lattice constants and correlation also makes it an ideal platform to explore possible topological phase transitions. By performing laser-based angle-resolved photoemission (ARPES) measurements with unprecedentedly high resolution, we have uncovered electronic evidence of type II semimetal state in MoTe2. We have established a full picture of the bulk electronic states and surface state for MoTe2 that are consistent with the band structure calculations. A single branch of surface state is identified that connects bulk hole pockets and bulk electron pockets. Detailed temperature-dependent ARPES measurements show high intensity spot-like features that is ~40 meV above the Fermi level and is close to the momentum space consistent with the theoretical expectation of the type II Weyl points. Our results constitute electronic evidence on the nature of the Weyl semimetal state that favors the presence of two sets of type II Weyl points in MoTe2.