The design and performance of the LUX-ZEPLIN (LZ) detector is described as of
March 2015 in this Conceptual Design Report. LZ is a second-generation
dark-matter detector with the potential for unprecedented sensitivity to weakly
interacting massive particles (WIMPs) of masses from a few GeV/c2 to hundreds
of TeV/c2. With total liquid xenon mass of about 10 tonnes, LZ will be the most
sensitive experiment for WIMPs in this mass region by the end of the decade.
This report describes in detail the design of the LZ technical systems.
Expected backgrounds are quantified and the performance of the experiment is
presented. The LZ detector will be located at the Sanford Underground Research
Facility in South Dakota. The organization of the LZ Project and a summary of
the expected cost and current schedule are given.
In order to develop a new structure microwave probe, the fabrication of AFM
probe on the GaAs wafer was studied. A waveguide was introduced by evaporating
Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8
micrometers high, and curvature radius about 50 nm was formed. The dimensions
of the cantilever are 250x30x15 micrometers. The open structure of the
waveguide at the tip of the probe was introduced by using FIB fabrication. AFM
topography of a grating sample was measured by using the fabricated GaAs
microwave probe. The fabricated probe was found having nanometer scale
resolution, and microwave emission was detected successfully at the tip of the
probe by approaching Cr-V steel and Au wire samples.
With the development of nanotechnology, the measurement of electrical
properties in local area of materials and devices has become a great need.
Although a lot kind of scanning probe microscope have been developed for
satisfying the requirement of nanotechnology, a microscope technique which can
determine electrical properties in local area of materials and devices is not
yet developed. Recently, microwave microscope has been an interest to many
researchers, due to its potential in the evaluation of electrical properties of
materials and devices. The advance of microwave is that the response of
materials is directly relative to the electromagnetic properties of materials.
However, because of the problem of the structure of probes, nanometer-scale
resolution has not been successful. To achieve the goal, a new structure
microwave probe is required. In this paper, we report a nanostructural
microwave probe. To restrain the attenuation of microwave in the probe, GaAs
was used as the substrate of the probe. To obtain the desired structure, wet
etching was used to fabricate the probe. Different with the dry etching, a
side-etching will occur under the etching mask. Utilizing this property, a
micro tip can be fabricated by etching a wafer, of which a small mask was
introduced on the surface in advance.
We study the performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne
and Ne+H2 at temperatures in the range of 2.6-293 K. In He, at temperatures
between 62 and 293 K, the triple-GEM structures often operate at rather high
gains, exceeding 1000. There is an indication that this high gain is achieved
by Penning effect in the gas impurities released by outgassing. At lower
temperatures the gain-voltage characteristics are significantly modified
probably due to the freeze-out of impurities. In particular, the double-GEM and
single-GEM structures can operate down to 2.6 K at gains reaching only several
tens at a gas density of about 0.5 g/l; at higher densities the maximum gain
drops further. In Ne, the maximum gain also drops at cryogenic temperatures.
The gain drop in Ne at low temperatures can be reestablished in Penning
mixtures of Ne+H2: very high gains, exceeding 10000, have been obtained in
these mixtures at 50-60 K, at a density of 9.2 g/l corresponding to that of
saturated Ne vapor near 27 K. The results obtained are relevant in the fields
of two-phase He and Ne detectors for solar neutrino detection and electron
avalanching at low temperatures.