
Precise estimation of spin Hall angle as well as successful maximization of
spinorbit torque (SOT) form a basis of electronic control of magnetic
properties with spintronic functionality. Until now, currentnonlinear Hall
effect, or second harmonic Hall voltage has been utilized as one of the methods
for estimating spin Hall angle, which is attributed to the magnetization
oscillation by SOT. Here, we argue the second harmonic Hall voltage in
magnetic/nonmagnetic topological insulator (TI) heterostructures,
Cr$_x$(Bi$_{1y}$Sb$_y$)$_{2x}$Te$_3$/(Bi$_{1y}$Sb$_y$)$_2$Te$_3$. From the
angular, temperature and magnetic field dependence, it is unambiguously shown
that the large second harmonic Hall voltage in TI heterostructures is governed
not by SOT but mainly by asymmetric magnon scattering mechanism without
magnetization oscillation. Thus, this method does not allow an accurate
estimation of spin Hall angle when magnons largely contribute to electron
scattering. Instead, the SOT contribution in a TI heterostructure is
exemplified by current pulse induced nonvolatile magnetization switching,
which is realized with a current density of $\sim 2.5 \times 10^{10}
\mathrm{A/m}^2$, showing its potential as spintronic materials.

We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with
the spin absorption method in the lateral spin valve structure. Far above the
spin glass temperature Tg where the magnetic moments of Mn impurities are
randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as
that of CuBi binary alloy. Surprisingly, however, it starts to decrease at
about 4Tg and becomes as little as 7 times smaller at 0.5Tg. A similar tendency
was also observed in anomalous Hall effects in the ternary alloys. We propose
an explanation in terms of a simple model considering the relative dynamics
between the localized moment and the conduction electron spin.

The spinmomentum locking at the Dirac surface state of a topological
insulator (TI) offers a distinct possibility of a highly efficient
chargetospin current (CS) conversion compared with spin Hall effects in
conventional paramagnetic metals. For the development of TIbased spin current
devices, it is essential to evaluate its conversion efficiency quantitatively
as a function of the Fermi level EF position. Here we exemplify a coefficient
of qICS to characterize the interface CS conversion effect by using spin
torque ferromagnetic resonance (STFMR) for (Bi1xSbx)2Te3 thin films whose EF
is tuned across the band gap. In bulk insulating conditions, interface CS
conversion effect via Dirac surface state is evaluated as nearly constant large
values of qICS, reflecting that the qICS is inversely proportional to the Fermi
velocity vF that is almost constant. However, when EF traverses through the
Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy
of surface spins or instability of helical spin structure. These results
demonstrate that the fine tuning of the EF in TI based heterostructures is
critical to maximizing the efficiency using the spinmomentum locking
mechanism.

We theoretically study the crossover between spin Hall effect and spin
swapping, a recently predicted phenomenon that consists in the interchange
between the current flow and its spin polarization directions [Lifshits and
Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tightbinding model
with spinorbit coupled disorder, spin Hall effect, spin relaxation and spin
swapping are treated on equal footing. We demonstrate that spin Hall effect and
spin swapping present very different dependences as a function of the
spinorbit coupling and disorder strengths. As a consequence, we show that spin
swapping may even exceed spin Hall effect. Three setups are proposed for the
experimental observation of the spin swapping effect in metals.

Spin current, i.e. the flow of spin angular momentum or magnetic moment, has
recently attracted much attention as the promising alternative for charge
current with better energy efficiency. Genuine spin current is generally
carried by the spin wave (propagating spin precession) in insulating
ferromagnets, and should hold the chiral symmetry when it propagates along the
spin direction. Here, we experimentally demonstrate that such a spin wave spin
current (SWSC) shows nonreciprocal propagation characters in a chirallattice
ferromagnet. This phenomenon originates from the interference of chirality
between the SWSC and crystallattice, which is mediated by the relativistic
spinorbit interaction. The present finding enables the design of perfect spin
current diode, and highlights the importance of the chiral aspect in SWSC.

A long spin relaxation time (tausf) is the key for the applications of
graphene to spintronics but the experimental values of tausf have been
generally much shorter than expected. We show that the usual determination by
the Hanle method underestimates tausf if proper account of the spin absorption
by contacts is lacking. By revisiting series of experimental results, we find
that the corrected tausf are longer and less dispersed, which leads to a more
unified picture of tausf derived from experiments. We also discuss how the
correction depends on the parameters of the graphene and contacts.

We present measurements of inverse spin Hall effects (ISHEs) in which the
conversion of a spin current into a charge current via the ISHE is detected not
as a voltage in a standard open circuit but directly as the charge current
generated in a closed loop. The method is applied to the ISHEs of Bidoped Cu
and Pt. The derived expression of ISHE for the loop structure can relate the
charge current flowing into the loop to the spin Hall angle of the SHE material
and the resistance of the loop.

The spin Hall effect (SHE), induced by spinorbit interaction in nonmagnetic
materials, is one of the promising phenomena for conversion between charge and
spin currents in spintronic devices. The spin Hall (SH) angle is the
characteristic parameter of this conversion. We have performed experiments of
the conversion from spin into charge currents by the SHE in lateral spin valve
structures. We present experimental results on the extrinsic SHEs induced by
doping nonmagnetic metals, Cu or Ag, with impurities having a large spinorbit
coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle
induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10
times larger than the intrinsic SH angle in Au. We also observed a large SH
angle for CuPb but the SHE signal disappeared in a few days. Such an aging
effect could be related to a fast mobility of Pb in Cu and has not been
observed in CuBi alloys.

We have succeeded in fully describing dynamic properties of spin current
including the different spin absorption mechanism for longitudinal and
transverse spins in lateral spin valves, which enables to elucidate intrinsic
spin transport and relaxation mechanism in the nonmagnet. The deduced spin
lifetimes are found independent of the contact type. From the transittime
distribution of spin current extracted from the Fourier transform in Hanle
measurement data, the velocity of the spin current in Ag with Py/Ag Ohmic
contact turns out much faster than that expected from the widely used model.

We demonstrate that a giant spin Hall effect (SHE) can be induced by
introducing a small amount of Bi impurities in Cu. Our analysis based on a new
3dimensional finite element treatment of spin transport shows that the sign of
the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle
amounts to 0.24. Such a negative large SH angle in CuBi alloys can be
explained by applying the resonant scattering model proposed by Fert and Levy
[Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.

The spin Hall effect and its inverse play key roles in spintronic devices
since they allow conversion of charge currents to and from spin currents. The
conversion efficiency strongly depends on material details, such as the
electronic band structure and the nature of impurities. Here we show an anomaly
in the inverse spin Hall effect in weak ferromagnetic NiPd alloys near their
Curie temperatures with a shape independent of material details, such as Ni
concentrations. By extending Kondo's model for the anomalous Hall effect, we
explain the observed anomaly as originating from the secondorder nonlinear
spin fluctuation of Ni moments. This brings to light an essential symmetry
difference between the spin Hall effect and the anomalous Hall effect which
reflects the first order nonlinear fluctuations of local moments. Our finding
opens up a new application of the spin Hall effect, by which a minuscule
magnetic moment can be detected.

Spinflip mechanism in Ag nanowires with MgO surface protection layers has
been investigated by means of nonlocal spin valve measurements using
Permalloy/Ag lateral spin valves. The spin flip events mediated by surface
scattering are effectively suppressed by the MgO capping layer. The spin
relaxation process was found to be well described in the framework of
ElliottYafet mechanism and then the probabilities of spinfilp scattering for
phonon or impurity mediated momentum scattering is precisely determined in the
nanowires. The temperature dependent spinlattice relaxation follows the
BlochGr\"uneisen theory and falls on to a universal curve for the monovalent
metals as in the Monod and Beuneu scaling determined from the conduction
electron spin resonance data for bulk.

The nonlocal spin injection in lateral spin valves is highly expected to be
an effective method to generate a pure spin current for potential spintronic
application. However, the spin valve voltage, which decides the magnitude of
the spin current flowing into an additional ferromagnetic wire, is typically of
the order of 1 {\mu}V. Here we show that lateral spin valves with low resistive
NiFe/MgO/Ag junctions enable the efficient spin injection with high applied
current density, which leads to the spin valve voltage increased hundredfold.
Hanle effect measurements demonstrate a longdistance collective 2pi spin
precession along a 6 {\mu}m long Ag wire. These results suggest a route to
faster and manipulable spin transport for the development of pure spin current
based memory, logic and sensing devices.

We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals,
Nb, Ta, Mo, Pd and Pt, by incorporating the spin absorption method in the
lateral spin valve structure; where large spin current preferably relaxes into
the transition metals, exhibiting strong spinorbit interactions. Thereby
nonlocal spin valve measurements enable us to evaluate their spin Hall
conductivities. The sign of the spin Hall conductivity changes systematically
depending on the number of $d$ electrons. This tendency is in good agreement
with the recent theoretical calculation based on the intrinsic spin Hall
effect.

We determine the dynamic magnetization induced in nonmagnetic metal wedges
composed of silver, copper and platinum by means of Brillouin light scattering
(BLS) microscopy. The magnetization is transferred from a ferromagnetic
Ni80Fe20 layer to the metal wedge via the spin pumping effect. The spin pumping
efficiency can be controlled by adding an insulating but transparent interlayer
between the magnetic and nonmagnetic layer. By comparing the experimental
results to a dynamical macroscopic spintransport model we determine the
transverse relaxation time of the pumped spin current which is much smaller
than the longitudinal relaxation time.

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by
injecting a pure spin current into a CuIr wire from a lateral spin valve
structure. While no spin Hall effect is observed without Ir impurity, the spin
Hall resistivity of CuIr increases linearly with the impurity concentration.
The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration
range between 1% and 12%, is practically independent of temperature. These
results represent a clear example of predominant skew scattering extrinsic
contribution to the spin Hall effect in a nonmagnetic alloy.

We fabricated a currentperpendiculartoplane pseudospinvalve nanopillar
comprising a thick and a thin Co rings with deep submicron lateral sizes. The
dc current can effectively induce the fluxclosure vortex states in the rings
with desired chiralities. Abrupt transitions between the vortex states are also
realized by the dc current and detected with the giant magnetoresistance
effect. Both Oersted field and spintransfer torque are found important to the
magnetic transitions, but the former is dominant. They can be designed to
cooperate with each other in the vortextovortex transitions by carefully
setting the chirality of the vortex state in the thick Co ring.

We fabricated Co nanorings incorporated in the vertical pseudospinvalve
nanopillar structures with deep submicron lateral sizes. It is shown that the
currentperpendiculartoplane giant magnetoresistance can be used to
characterize a very small magnetic nanoring effectively. Both the onion state
and the fluxclosure vortex state are observed. The Co nanorings can be
switched between the onion states as well as between onion and vortex states
not only by the external field but also by the perpendicularly injected dc
current.

We investigate the influence of the vortex chirality on the magnetization
processes of a magnetostatically coupled pair of magnetic disks. The magnetic
vortices with opposite chiralities are realized by introducing asymmetry into
the disks. The motion of the paired vortices are studied by measuring the
magnetoresistance with lockin resistance bridge technique. The vortex
annihilation process is found to depend on the moving directions of the
magnetic vorticies. The experimental results are well reproduced by the
micromagnetic simulation.

Reversible spin Hall effect comprising the "direct" and "inverse" spin Hall
effects was successfully detected at room temperature. This experimental
demonstration proves the fundamental relations called Onsager reciprocal
relations between spin and charge currents. A platinum wire with a strong
spinorbit interaction is used not only as a spin current absorber but also as
a spin current source in the present lateral structure specially designed for
clear detection of both charge and spin accumulations via the spinorbit
interaction. The obtained spin Hall conductivity is much larger than the
reported value of Aluminum wire because of the larger spinorbit interaction.

The induced motion of a magnetic vortex in a micronsized ferromagnetic disk
due to the DC current injection is studied by measuring planar Hall effect. The
DC current injection is found to induce the spin torque that sweeps the vortex
out of the disk at the critical current while bias magnetic field are applied.
The currentinduced vortex core displacement deduced from the change in planar
Hall resistance is quantitatively consistent with theoretical prediction. Peak
structures similar to those originated from spin wave excitations are observed
in the differential planar Hall resistance curve.

We have performed nonlocal spin injection into a nanoscale ferromagnetic
particle configured in a lateral spin valve structure to switch its
magnetization only by spin current. The nonlocal spin injection aligns the
magnetization of the particle parallel to the magnetization of the spin
injector. The responsible spin current for switching is estimated from the
experiment to be about 200 $\mu$A, which is reasonable compared with the values
obtained for conventional pillar structures. Interestingly the switching always
occurs from antiparallel to parallel in the particle/injector magnetic
configurations, whereas no opposite switching is observed. Possible reasons for
this discrepancy are discussed.

We demonstrate the method to calculate the spatial distributions of the spin
current and accumulation in the multiterminal ferromagnetic/nonmagnetic hybrid
structure using an approximate electrotransmission line. The analyses based on
the obtained equation yield the results in good agreement with the experimental
ones. This implies that the method allows us to determine the spin diffusion
length of additionally connected electrically floating wire from the reduction
of the spin signal.

We have investigated experimentally the nonlocal voltage signal (NLVS) in
the lateral permalloy (Py)/Cu/Py spin valve devices with different width of Cu
stripes. We found that NLVS strongly depends on the distribution of the
spinpolarized current inside Cu strip in the vicinity of the Pydetector. To
explain these data we have developed a diffusion model describing spatial (3D)
distribution of the spinpolarized current in the device. The results of our
calculations show that NLVS is decreased by factor of 10 due to spin
flipscattering occurring at Py/Cu interface. The interface resistivity on
Py/Cu interface is also present, but its contribution to reduction of NLVS is
minor. We also found that most of the spinpolarized current is injected within
the region 30 nm from Pyinjector/Cu interface. In the area at Pydetector/Cu
interface, the spinpolarized current is found to flow mainly close on the
injector side, with 1/e exponential decay in the magnitude within the distance
80 nm.

We present a formalism determining spinpolarized current and electrochemical
potential inside arbitrary electric circuit within diffusive regime for
parallel/antiparallel magnetic states. When arbitrary nanostructure is
expressed by 3dimensional (3D) electric circuit, we can determine 3D
spinpolarized current and electrochemical potential distributions inside it.
We apply this technique to (Cu/Co) pillar structures, where pillar is
terminated either by infinitely large Cu layer, or by Cu wire with identical
crosssectional area as pillar itself. We found that infinitely large Cu layers
work as a strong spinscatterers, increasing magnitude of spinpolarized
current inside the pillar twice and reducing spin accumulation nearly to zero.
As most experimentally studied pillar structures are terminated by such a
infinitely large layers, we propose modification of standard ValetFert
formalism to simply include influence of such infinitely large layers.