
We report the observation of efficient chargetospin conversion in the
threedimensional topological insulator (TI) Bi2Se3 and Ag bilayer by the
spintorque ferromagnetic resonance technique. The spin orbit torque ratio in
the Bi2Se3/Ag/CoFeB heterostructure shows a significant enhancement as the Ag
thickness increases to ~2 nm and reaches a value of 0.5 for 5 nm Ag, which is
~3 times higher than that of Bi2Se3/CoFeB at room temperature. The observation
reveals the interfacial effect of Bi2Se3/Ag exceeds that of the topological
surface states (TSS) in the Bi2Se3 layer and plays a dominant role in the
chargetospin conversion in the Bi2Se3/Ag/CoFeB system. Based on the
firstprinciples calculations, we attribute our observation to the large
Rashbasplitting bands which wrap the TSS band and has the same net spin
polarization direction as TSS of Bi2Se3. Subsequently, we demonstrate for the
first time the Rashba induced magnetization switching in Bi2Se3/Ag/Py with a
low current density of 5.8 X 10^5 A/cm2.

Despite the crucial role of interfacial perpendicular magnetic anisotropy in
Co(Fe)/MgO based magnetic tunnel junction, the underlying mechanism is still
being debated. Here, we report an anatomical study of oxygen and Mg effect on
Pt/Co bilayers through repeated insitu anomalous Hall effect measurements,
controlled oxygen exposure and Mg deposition in an ultrahigh vacuum system. We
found that chemisorbed oxygen not only quenches the effective magnetic moment
of the Co surface layer, but also softens its magnetic anisotropy. However, a
subsequent Mg dusting on the oxygen preexposed Pt/Co surface can recover the
magnetic anisotropy. The ab initio calculations on the exchange splitting and
orbital hybridization near the Fermi level give a clear physical explanation of
the experimental observations. Our results suggest that Co(Fe)OM bond plays a
more important role than the widely perceived Co(Fe)O bond does in realizing
interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO heterostructures.

We present an allHeusler architecture which could be used as a rational
design scheme for achieving high spinfiltering efficiency in the
currentperpendiculartoplane giant magnetoresistance (CPPGMR) devices. A
Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an
architecture, of which the electronic structure and magnetotransport properties
are systematically investigated by first principles approaches. Almost
perfectly matched energy bands and Fermi surfaces between the allHeusler
electrodespacer pair are found, indicating large interfacial spinasymmetry,
high spininjection efficiency, and consequently high GMR ratio. Transport
calculations further confirms the superiority of the allHeusler architecture
over the conventional Heusler/transitionmetal(TM) structure by comparing their
transmission coefficients and interfacial resistances of parallel conduction
electrons, as well as the macroscopic currentvoltage (IV) characteristics. We
suggest future theoretical and experimental efforts in developing novel
allHeusler GMR junctions for the read heads of the next generation
highdensity hard disk drives (HDDs).

A major challenge of spintronics is in generating, controlling and detecting
spinpolarized current. Manipulation of spinpolarized current, in particular,
is difficult. We demonstrate here, based on calculated transport properties of
graphene nanoribbons, that nearly +100% spinpolarized current can be
generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a sourcedrain
voltage in the bipolar spin diode, in addition to magnetic configurations of
the electrodes. This unusual transport property is attributed to the intrinsic
transmission selection rule of the spin subbands near the Fermi level in ZGNRs.
The simultaneous control of spin current by the bias voltage and the magnetic
configurations of the electrodes provides an opportunity to implement a whole
range of spintronics devices. We propose theoretical designs for a complete set
of basic spintronic devices, including bipolar spin diode, transistor and logic
gates, based on ZGNRs.

We report results of both Diffusion Quantum Monte Carlo(DMC) method and
Reptation Quantum Monte Carlo(RMC) method on the potential energy curve of the
helium dimer. We show that it is possible to obtain a highly accurate
description of the helium dimer. An improved stochastic reconfiguration
technique is employed to optimize the manybody wave function, which is the
starting point for highly accurate simulations based on the Diffusion Quantum
Monte Carlo(DMC) and Reptation Quantum Monte Carlo (RMC) methods. We find that
the results of these methods are in excellent agreement with the best
theoretical results at short range, especially recently developed Reptation
Quantum Monte Carlo(RMC) method, yield practically accurate results with
reduced statistical error, which gives very excellent agreement across the
whole potential. For the equilibrium internuclear distance of 5.6 bohr, the
calculated electronic energy with Reptation Quantum Monte Carlo(RMC) method is
5.807483599$\pm$0.000000015 hartrees and the corresponding well depth is
11.003$\pm$0.005 K.

We present theoretical evidence for local magnetic moments on Ti3+ ions in
oxygendeficient anatase and rutile TiO2 observed in a recent experiment [S.
Zhou, et al., Phys. Rev. B 79, 113201 (2009)]. Results of our firstprinciples
GGA+U calculations reveal that an oxygen vacancy converts two Ti4+ ions to two
Ti3+ ions in anatase phase, which results in a local magnetic moment of 1.0
$\mu_B$ per Ti3+. The two Ti3+ ions, however, form a stable antiferromagnetic
state, and similar antiferromagnetism is also observed in oxygendeficient
rutile phase TiO2. The calculated results are in good agreement with the
experimentally observed antiferromagneticlike behavior in oxygendeficient
TiO systems.