• We search for rare decays of $D$ mesons to hadrons accompany with an electron-positron pair (h(h')$e^+e^-$), using an $e^+e^-$ collision sample corresponding to an integrated luminosity of 2.93 fb$^{-1}$ collected with the BESIII detector at $\sqrt{s}$ = 3.773 GeV. No significant signals are observed, and the corresponding upper limits on the branching fractions at the $90\%$ confidence level are determined. The sensitivities of the results are at the level of $10^{-5} \sim 10^{-6}$, providing a large improvement over previous searches.
• Using a data sample of $448.1 \times 10^6$ $\psi(3686)$ events collected with the BESIII detector at the BEPCII collider, we report the first observation of the electromagnetic Dalitz decay $\psi(3686) \to \eta' e^+ e^-$, with significances of 7.0$\sigma$ and 6.3$\sigma$ when reconstructing the $\eta'$ meson via its decay modes $\eta'\to\gamma \pi^+ \pi^-$ and $\eta'\to\pi^+\pi^-\eta$ ($\eta \to \gamma\gamma$), respectively. The weighted average branching fraction is determined to be $\mathcal{B}(\psi(3686) \to \eta' e^+ e^-)= (1.64 \pm 0.22 \pm 0.09) \times 10^{-6}$, where the first uncertainty is statistical and the second systematic.
• Density-functional studies of spin-orbit splitting in graphene on metals(1008.0696)

Spin-orbit splitting in graphene on Ni, Au, or Ag (111) substrates was examined on the basis of density-functional theory. Graphene grown on the three metals was found to have Rashba splitting of a few or several tens of meV. The strong splitting obtained on Au or Ag substrates was mainly ascribed to effective hybridization of graphene $p_{z}$ state with Au or Ag $d_{z^{2}}$ states, rather than charge transfer as previously proposed. Our work provides theoretical understandings of the metal-induced Rashba effect in graphene.
• Electronic and magnetic properties of bilayer graphene with intercalated adsorption atoms C, N and O(1001.0803)

We present an ab-initio density function theory to investigate the electronic and magnetic structures of the bilayer graphene with intercalated atoms C, N, and O. The intercalated atom although initially positioned at the middle site of the bilayer interval will finally be adsorbed to one graphene layer. Both N and O atoms favor the bridge site (i.e. above the carbon-carbon bonding of the lower graphene layer), while the C atom prefers the hollow site (i.e. just above a carbon atom of the lower graphene layer and simultaneously below the center of a carbon hexagon of the upper layer). Concerning the magnetic property, both C and N adatoms can induce itinerant Stoner magnetism by introducing extended or quasilocalized states around the Fermi level. Full spin polarization can be obtained in N-intercalated system and the magnetic moment mainly focuses on the N atom. In C-intercalated system, both the foreign C atom and some carbon atoms of the bilayer graphene are induced to be spin-polarized. N and O atoms can easily get electrons from carbon atoms of bilayer graphene, which leads to Fermi level shifting downward to valence band and thus producing the metallic behavior in bilayer graphene.
• Novel electronic structure induced by a highly strained oxide interface with incommensurate crystal fields(0806.1338)

The misfit oxide, Bi$_{2}$Ba$_{1.3}$K$_{0.6}$Co$_{2.1}$O$_{y}$, made of alternating rocksalt-structured [BiO/BaO] layers and hexagonal CoO$_{2}$ layers, was studied by angle-resolved photoemission spectroscopy. Detailed electronic structure of such a highly strained oxide interfaces is revealed for the first time. We found that under the two incommensurate crystal fields, electrons are confined within individual sides of the interface, and scattered by umklapp scattering of the crystal field from the other side. In addition, the high strain on the rocksalt layer raises its chemical potential and induces large charge transfer to the CoO$_{2}$ layer. Furthermore, a novel interface effects, the interfacial enhancement of electron-phonon interactions, is discovered. Our findings of these electronic properties lay a foundation for designing future functional oxide interfaces.
• Ideal switching effect in periodic spin-orbit coupling structures(cond-mat/0611362)

Nov. 14, 2006 cond-mat.mes-hall
An ideal switching effect is discovered in a semiconductor nanowire with a spatially-periodic Rashba structure. Bistable ON' and OFF' states can be realized by tuning the gate voltage applied on the Rashba regions. The energy range and position of `OFF' states can be manipulated effectively by varying the strength of the spin-orbit coupling (SOC) and the unit length of the periodic structure, respectively. The switching effect of the nanowire is found to be tolerant of small random fluctuations of SOC strength in the periodic structure. This ideal switching effect might be applicable in future spintronic devices.
• High-energy scale revival and giant kink in the dispersion of a cuprate superconductor(cond-mat/0607450)

In the present photoemission study of a cuprate superconductor Bi1.74Pb0.38Sr1.88CuO6+delta, we discovered a large scale dispersion of the lowest band, which unexpectedly follows the band structure calculation very well. The incoherent nature of the spectra suggests that the hopping-dominated dispersion occurs possibly with the assistance of local spin correlations. A giant kink in the dispersion is observed, and the complete self-energy containing all interaction information is extracted for a doped cuprate in the low energy region. These results recovered significant missing pieces in our current understanding of the electronic structure of cuprates.
• Realization of arbitrary single-qubit gates through control of spin-orbit couplings in semiconductor nanowires(cond-mat/0604346)

We propose a theoretical scheme to realize arbitrary single-qubit gates through two simple device units: one-dimensional semiconductor wires with Dresselhaus spin-orbit coupling (SOC) and Rashba SOC, separately. Qubit information coded by the electron spin can be accurately manipulated by the SOC when crossing the semiconductor wire. The different manipulative behaviors in Dresselhaus and Rashba wires enable us to make the diverse quantum logic gates. Furthermore, by connecting the Dresselhaus and Rashba units in series, we obtain a universal set of single qubit gates: Hadamard, phase, and $\pi /8$ gates, inferring that an arbitrary single qubit gate can be achieved. Because the total transmission is satisfied in the two device units, all the logic gates we have obtained are lossless. In addition, a ballistic spintronic switch is proposed in the present investigation.
• Disorder-induced melting of the charge order in thin films of Pr0.5Ca0.5MnO3(cond-mat/0201365)

We have studied the magnetic-field-induced melting of the charge order in thin films of Pr0.5Ca0.5MnO3 (PCMO) films on SrTiO3 (STO) by X-ray diffraction, magnetization and transport measurement. At small thickness (25 nm) the films are under tensile strain and the low-temperature melting fields are of the order of 20 T or more, comparable to the bulk value. With increasing film thickness the strain relaxes, which leads to a strong decrease of the melting fields. For a film of 150 nm, with in-plane and out-of-plane lattice parameters closer to the bulk value, the melting field has reduced to 4 T at 50 K, with a strong increase in the hysteretic behavior and also an increasing fraction of ferromagnetic material. Strain relaxation by growth on a template of YBa2Cu3O(7-delta) or by post-annealing yields similar results with an even stronger reduction of the melting field. Apparently, strained films behave bulk-like. Relaxation leads to increasing suppression of the CO state, presumably due to atomic scale disorder produced by the relaxation process.