
SnTe is a prototypical topological crystalline insulator, in which the
gapless surface state is protected by a crystal symmetry. The hallmark of the
topological properties in SnTe is the Dirac cones projected to the surfaces
with mirror symmetry, stemming from the band inversion near the L points of its
bulk Brillouin zone, which can be measured by angleresolved photoemission. We
have obtained the (111) surface of SnTe film by molecular beam epitaxy on
BaF2(111) substrate. Photonenergydependence of in situ angleresolved
photoemission, covering multiple Brillouin zones in the direction perpendicular
tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and
M_bar points of the surface Brillouinzone. In addition, we observe a
Diracconelike band structure at the Gamma point of the bulk Brillouin
zone,whose Dirac energy is largely different from those at the Gamma_bar and
M_bar points.

The high temperature superconductivity in singleunitcell (1UC) FeSe on
SrTiO3 (STO)(001) and the observation of replica bands by angleresolved
photoemission spectroscopy (ARPES) have led to the conjecture that the coupling
between FeSe electron and the STO phonon is responsible for the enhancement of
Tc over other FeSebased superconductors1,2. However the recent observation of
a similar superconducting gap in FeSe grown on the (110) surface of STO raises
the question of whether a similar mechanism applies3,4. Here we report the
ARPES study of the electronic structure of FeSe grown on STO(110). Similar to
the results in FeSe/STO(001), clear replica bands are observed. We also present
a comparative study of STO (001) and STO(110) bare surfaces, where photo doping
generates metallic surface states. Similar replica bands separating from the
main band by approximately the same energy are observed, indicating this
coupling is a generic feature of the STO surfaces and interfaces. Our findings
suggest that the large superconducting gaps observed in FeSe films grown on two
different STO surface terminations are likely enhanced by a common coupling
between FeSe electrons and STO phonons.

Topological quantum materials represent a new class of matter with both
exotic physical phenomena and novel application potentials. Many Heusler
compounds, which exhibit rich emergent properties such as unusual magnetism,
superconductivity and heavy fermion behaviour, have been predicted to host
nontrivial topological electronic structures. The coexistence of topological
order and other unusual properties makes Heusler materials ideal platform to
search for new topological quantum phases (such as quantum anomalous Hall
insulator and topological superconductor). By carrying out angleresolved
photoemission spectroscopy (ARPES) and ab initio calculations on rareearth
halfHeusler compounds LnPtBi (Ln=Lu, Y), we directly observed the unusual
topological surface states on these materials, establishing them as first
members with nontrivial topological electronic structure in this class of
materials. Moreover, as LnPtBi compounds are noncentrosymmetric
superconductors, our discovery further highlights them as promising candidates
of topological superconductors.

We developed a tabletop vacuum ultraviolet (VUV) laser with $113.778$nm
wavelength (10.897eV) and demonstrated its viability as a photon source for
high resolution angleresolved photoemission spectroscopy (ARPES). This
subnanosecond pulsed VUV laser operates at a repetition rate of 10MHz,
provides a flux of 2$\times$10$^{12}$ photons/second, and enables photoemission
with energy and momentum resolutions better than 2meV and 0.012\AA$^{1}$,
respectively. Spacecharge induced energy shifts and spectral broadenings can
be reduced below 2meV. The setup reaches electron momenta up to 1.2\AA$^{1}$,
granting full access to the first Brillouin zone of most materials. Control
over the linear polarization, repetition rate, and photon flux of the VUV
source facilitates ARPES investigations of a broad range of quantum materials,
bridging the application gap between contemporary low energy laserbased ARPES
and synchrotronbased ARPES. We describe the principles and operational
characteristics of this source, and showcase its performance for rare earth
metal tritellurides, high temperature cuprate superconductors and ironbased
superconductors.

Establishing the appropriate theoretical framework for unconventional
superconductivity in the ironbased materials requires correct understanding of
both the electron correlation strength and the role of Fermi surfaces. This
fundamental issue becomes especially relevant with the discovery of the iron
chalcogenide (FeCh) superconductors, the only ironbased family in proximity to
an insulating phase. Here, we use angleresolved photoemission spectroscopy
(ARPES) to measure three representative FeCh superconductors, FeTe0.56Se0.44,
K0.76Fe1.72Se2, and monolayer FeSe film grown on SrTiO3. We show that, these
FeChs are all in a strongly correlated regime at low temperatures, with an
orbitalselective strong renormalization in the dxy bands despite having
drastically different Fermisurface topologies. Furthermore, raising
temperature brings all three compounds from a metallic superconducting state to
a phase where the dxy orbital loses all spectral weight while other orbitals
remain itinerant. These observations establish that FeChs display universal
orbitalselective strong correlation behaviors that are insensitive to the
Fermi surface topology, and are close to an orbitalselective Mott phase
(OSMP), hence placing strong constraints for theoretical understanding of
ironbased superconductors.

Threedimensional (3D) topological Weyl semimetals (TWSs) represent a novel
state of quantum matter with unusual electronic structures that resemble both a
"3D graphene" and a topological insulator by possessing pairs of Weyl points
(through which the electronic bands disperse linearly along all three momentum
directions) connected by topological surface states, forming the unique
"Fermiarc" type Fermisurface (FS). Each Weyl point is chiral and contains
half of the degrees of freedom of a Dirac point, and can be viewed as a
magnetic monopole in the momentum space. Here, by performing angleresolved
photoemission spectroscopy on noncentrosymmetric compound TaAs, we observed
its complete band structures including the unique "Fermiarc" FS and linear
bulk band dispersion across the Weyl points, in excellent agreement with the
theoretical calculations. This discovery not only confirms TaAs as the first 3D
TWS, but also provides an ideal platform for realizing exotic physical
phenomena (e.g. negative magnetoresistance, chiral magnetic effects and quantum
anomalous Hall effect) which may also lead to novel future applications.

Recent experiments have revealed spectacular transport properties of
conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$)
have started a new trend to realize a large magnetoresistance, which is the
change of electrical resistance by an external magnetic field. Weyl semimetal
(WSM) is a topological semimetal with massless relativistic electrons as the
threedimensional analogue of graphene and promises exotic transport properties
and surface states, which are different from those of the famous topological
insulators (TIs). In this letter, we choose to utilize NbP in magnetotransport
experiments because its band structure is on assembly of a WSM and a normal
semimetal. Such a combination in NbP indeed leads to the observation of
remarkable transport properties, an extremely large magnetoresistance of
850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T
without any signs of saturation, and ultrahigh carrier mobility of
5$\times$10$^6$ cm$^2$ V$^{1}$ s$^{1}$ accompanied by strong Shubnikovde
Hass (SdH) oscillations. NbP presents a unique example to consequent design the
functionality of materials by combining the topological and conventional
phases.

The level of electronic correlation has been one of the key questions in
understanding the nature of superconductivity. Among the ironbased
superconductors, the iron chalcogenide family exhibits the strongest electron
correlations. To gauge the correlation strength, we performed systematic
angleresolved photoemission spectroscopy study on the iron chalcogenide series
Fe$_{1+y}$Se$_x$Te$_{1x}$ (0$<$x$<$0.59), a model system with the simplest
structure. Our measurement reveals an incoherent to coherent crossover in the
electronic structure as the selenium ratio increases and the system evolves
from the weakly localized to more itinerant state. Furthermore, we found that
the effective mass of bands dominated by the d$_{xy}$ orbital character
significantly decreases with increasing selenium ratio, as compared to the
d$_{xz}$/d$_{yz}$ orbitaldominated bands. The orbital dependent change in the
correlation level agrees with theoretical calculations on the band structure
renormalization, and may help to understand the onset of superconductivity in
Fe$_{1+y}$Se$_x$Te$_{1x}$.

Quantum systems in confined geometries are host to novel physical phenomena.
Examples include quantum Hall systems in semiconductors and Dirac electrons in
graphene. Interest in such systems has also been intensified by the recent
discovery of a large enhancement in photoluminescence quantum efficiency and a
potential route to valleytronics in atomically thin layers of transition metal
dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to
the indirect to direct bandgap transition in monolayers. Here, we report the
first direct observation of the transition from indirect to direct bandgap in
monolayer samples by using angle resolved photoemission spectroscopy on
highquality thin films of MoSe2 with variable thickness, grown by molecular
beam epitaxy. The band structure measured experimentally indicates a stronger
tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap
size, than theoretically predicted. Moreover, our finding of a significant
spinsplitting of 180 meV at the valence band maximum of a monolayer MoSe2 film
could expand its possible application to spintronic devices.

The nature of metallicity and the level of electronic correlations in the
antiferromagnetically ordered parent compounds are two important open issues
for the ironbased superconductivity. We perform a temperaturedependent
angleresolved photoemission spectroscopy study of Fe1.02Te, the parent
compound for iron chalcogenide superconductors. Deep in the antiferromagnetic
state, the spectra exhibit a "peakdiphump" line shape associated with two
clearly separate branches of dispersion, characteristics of polarons seen in
manganites and lightlydoped cuprates. As temperature increases towards the
Neel temperature (T_N), we observe a decreasing renormalization of the peak
dispersion and a counterintuitive sharpening of the hump linewidth, suggestive
of an intimate connection between the weakening electronphonon (eph) coupling
and antiferromagnetism. Our finding points to the highlycorrelated nature of
Fe1.02Te ground state featured by strong interactions among the charge, spin
and lattice and a good metallicity plausibly contributed by the coherent
polaron motion.

In this work, we study the A$_{x}$Fe$_{2y}$Se$_2$ (A=K, Rb) superconductors
using angleresolved photoemission spectroscopy. In the low temperature state,
we observe an orbitaldependent renormalization for the bands near the Fermi
level in which the dxy bands are heavily renormliazed compared to the dxz/dyz
bands. Upon increasing temperature to above 150K, the system evolves into a
state in which the dxy bands have diminished spectral weight while the dxz/dyz
bands remain metallic. Combined with theoretical calculations, our observations
can be consistently understood as a temperature induced crossover from a
metallic state at low temperature to an orbitalselective Mott phase (OSMP) at
high temperatures. Furthermore, the fact that the superconducting state of
A$_{x}$Fe$_{2y}$Se$_2$ is near the boundary of such an OSMP constraints the
system to have sufficiently strong onsite Coulomb interactions and Hund's
coupling, and hence highlight the nontrivial role of electron correlation in
this family of iron superconductors.

Topological insulators represent a new state of quantum matter attractive to
both fundamental physics and technological applications such as spintronics and
quantum information processing. In a topological insulator, the bulk energy gap
is traversed by spinmomentum locked surface states forming an odd number of
surface bands that possesses unique electronic properties. However, transport
measurements have often been dominated by residual bulk carriers from crystal
defects or environmental doping which mask the topological surface
contribution. Here we demonstrate (BixSb1x)2Te3 as a tunable topological
insulator system to manipulate bulk conductivity by varying the Bi/Sb
composition ratio. (BixSb1x)2Te3 ternary compounds are confirmed as
topological insulators for the entire composition range by angle resolved
photoemission spectroscopy (ARPES) measurements and ab initio calculations.
Additionally, we observe a clear ambipolar gating effect similar to that
observed in graphene using nanoplates of (BixSb1x)2Te3 in
fieldeffecttransistor (FET) devices. The manipulation of carrier type and
concentration in topological insulator nanostructures demonstrated in this
study paves the way for implementation of topological insulators in
nanoelectronics and spintronics.

Angle resolved photoemission spectroscopy (ARPES) studies were performed on
two compounds (TlBiTe$_2$ and TlBiSe$_2$) from a recently proposed three
dimensional topological insulator family in Thalliumbased IIIVVI$_2$ ternary
chalcogenides. For both materials, we show that the electronic band structures
are in broad agreement with the $ab$ $initio$ calculations; by surveying over
the entire surface Brillouin zone (BZ), we demonstrate that there is a single
Dirac cone reside at the center of BZ, indicating its topological
nontriviality. For TlBiSe$_2$, the observed Dirac point resides at the top of
the bulk valance band, making it a large gap ($\geq$200$meV$) topological
insulator; while for TlBiTe$_2$, we found there exist a negative indirect gap
between the bulk conduction band at $M$ point and the bulk valance band near
$\Gamma$, making it a semimetal at proper doping. Interestingly, the unique
band structures of TlBiTe$_2$ we observed further suggest TlBiTe$_2$ may be a
candidate for topological superconductors.