SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.

The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron and the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.

Topological quantum materials represent a new class of matter with both exotic physical phenomena and novel application potentials. Many Heusler compounds, which exhibit rich emergent properties such as unusual magnetism, superconductivity and heavy fermion behaviour, have been predicted to host non-trivial topological electronic structures. The coexistence of topological order and other unusual properties makes Heusler materials ideal platform to search for new topological quantum phases (such as quantum anomalous Hall insulator and topological superconductor). By carrying out angle-resolved photoemission spectroscopy (ARPES) and ab initio calculations on rare-earth half-Heusler compounds LnPtBi (Ln=Lu, Y), we directly observed the unusual topological surface states on these materials, establishing them as first members with non-trivial topological electronic structure in this class of materials. Moreover, as LnPtBi compounds are non-centrosymmetric superconductors, our discovery further highlights them as promising candidates of topological superconductors.

We developed a table-top vacuum ultraviolet (VUV) laser with $113.778$nm wavelength (10.897eV) and demonstrated its viability as a photon source for high resolution angle-resolved photoemission spectroscopy (ARPES). This sub-nanosecond pulsed VUV laser operates at a repetition rate of 10MHz, provides a flux of 2$\times$10$^{12}$ photons/second, and enables photoemission with energy and momentum resolutions better than 2meV and 0.012\AA$^{-1}$, respectively. Space-charge induced energy shifts and spectral broadenings can be reduced below 2meV. The setup reaches electron momenta up to 1.2\AA$^{-1}$, granting full access to the first Brillouin zone of most materials. Control over the linear polarization, repetition rate, and photon flux of the VUV source facilitates ARPES investigations of a broad range of quantum materials, bridging the application gap between contemporary low energy laser-based ARPES and synchrotron-based ARPES. We describe the principles and operational characteristics of this source, and showcase its performance for rare earth metal tritellurides, high temperature cuprate superconductors and iron-based superconductors.

Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide (FeCh) superconductors, the only iron-based family in proximity to an insulating phase. Here, we use angle-resolved photoemission spectroscopy (ARPES) to measure three representative FeCh superconductors, FeTe0.56Se0.44, K0.76Fe1.72Se2, and monolayer FeSe film grown on SrTiO3. We show that, these FeChs are all in a strongly correlated regime at low temperatures, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi-surface topologies. Furthermore, raising temperature brings all three compounds from a metallic superconducting state to a phase where the dxy orbital loses all spectral weight while other orbitals remain itinerant. These observations establish that FeChs display universal orbital-selective strong correlation behaviors that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase (OSMP), hence placing strong constraints for theoretical understanding of iron-based superconductors.

Three-dimensional (3D) topological Weyl semimetals (TWSs) represent a novel state of quantum matter with unusual electronic structures that resemble both a "3D graphene" and a topological insulator by possessing pairs of Weyl points (through which the electronic bands disperse linearly along all three momentum directions) connected by topological surface states, forming the unique "Fermi-arc" type Fermi-surface (FS). Each Weyl point is chiral and contains half of the degrees of freedom of a Dirac point, and can be viewed as a magnetic monopole in the momentum space. Here, by performing angle-resolved photoemission spectroscopy on non-centrosymmetric compound TaAs, we observed its complete band structures including the unique "Fermi-arc" FS and linear bulk band dispersion across the Weyl points, in excellent agreement with the theoretical calculations. This discovery not only confirms TaAs as the first 3D TWS, but also provides an ideal platform for realizing exotic physical phenomena (e.g. negative magnetoresistance, chiral magnetic effects and quantum anomalous Hall effect) which may also lead to novel future applications.

Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of electrical resistance by an external magnetic field. Weyl semimetal (WSM) is a topological semimetal with massless relativistic electrons as the three-dimensional analogue of graphene and promises exotic transport properties and surface states, which are different from those of the famous topological insulators (TIs). In this letter, we choose to utilize NbP in magneto-transport experiments because its band structure is on assembly of a WSM and a normal semimetal. Such a combination in NbP indeed leads to the observation of remarkable transport properties, an extremely large magnetoresistance of 850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T without any signs of saturation, and ultrahigh carrier mobility of 5$\times$10$^6$ cm$^2$ V$^{-1}$ s$^{-1}$ accompanied by strong Shubnikov-de Hass (SdH) oscillations. NbP presents a unique example to consequent design the functionality of materials by combining the topological and conventional phases.

The level of electronic correlation has been one of the key questions in understanding the nature of superconductivity. Among the iron-based superconductors, the iron chalcogenide family exhibits the strongest electron correlations. To gauge the correlation strength, we performed systematic angle-resolved photoemission spectroscopy study on the iron chalcogenide series Fe$_{1+y}$Se$_x$Te$_{1-x}$ (0$<$x$<$0.59), a model system with the simplest structure. Our measurement reveals an incoherent to coherent crossover in the electronic structure as the selenium ratio increases and the system evolves from the weakly localized to more itinerant state. Furthermore, we found that the effective mass of bands dominated by the d$_{xy}$ orbital character significantly decreases with increasing selenium ratio, as compared to the d$_{xz}$/d$_{yz}$ orbital-dominated bands. The orbital dependent change in the correlation level agrees with theoretical calculations on the band structure renormalization, and may help to understand the onset of superconductivity in Fe$_{1+y}$Se$_x$Te$_{1-x}$.

Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect to direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of 180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.

The nature of metallicity and the level of electronic correlations in the antiferromagnetically ordered parent compounds are two important open issues for the iron-based superconductivity. We perform a temperature-dependent angle-resolved photoemission spectroscopy study of Fe1.02Te, the parent compound for iron chalcogenide superconductors. Deep in the antiferromagnetic state, the spectra exhibit a "peak-dip-hump" line shape associated with two clearly separate branches of dispersion, characteristics of polarons seen in manganites and lightly-doped cuprates. As temperature increases towards the Neel temperature (T_N), we observe a decreasing renormalization of the peak dispersion and a counterintuitive sharpening of the hump linewidth, suggestive of an intimate connection between the weakening electron-phonon (e-ph) coupling and antiferromagnetism. Our finding points to the highly-correlated nature of Fe1.02Te ground state featured by strong interactions among the charge, spin and lattice and a good metallicity plausibly contributed by the coherent polaron motion.

In this work, we study the A$_{x}$Fe$_{2-y}$Se$_2$ (A=K, Rb) superconductors using angle-resolved photoemission spectroscopy. In the low temperature state, we observe an orbital-dependent renormalization for the bands near the Fermi level in which the dxy bands are heavily renormliazed compared to the dxz/dyz bands. Upon increasing temperature to above 150K, the system evolves into a state in which the dxy bands have diminished spectral weight while the dxz/dyz bands remain metallic. Combined with theoretical calculations, our observations can be consistently understood as a temperature induced crossover from a metallic state at low temperature to an orbital-selective Mott phase (OSMP) at high temperatures. Furthermore, the fact that the superconducting state of A$_{x}$Fe$_{2-y}$Se$_2$ is near the boundary of such an OSMP constraints the system to have sufficiently strong on-site Coulomb interactions and Hund's coupling, and hence highlight the non-trivial role of electron correlation in this family of iron superconductors.

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.

Angle resolved photoemission spectroscopy (ARPES) studies were performed on two compounds (TlBiTe$_2$ and TlBiSe$_2$) from a recently proposed three dimensional topological insulator family in Thallium-based III-V-VI$_2$ ternary chalcogenides. For both materials, we show that the electronic band structures are in broad agreement with the $ab$ $initio$ calculations; by surveying over the entire surface Brillouin zone (BZ), we demonstrate that there is a single Dirac cone reside at the center of BZ, indicating its topological non-triviality. For TlBiSe$_2$, the observed Dirac point resides at the top of the bulk valance band, making it a large gap ($\geq$200$meV$) topological insulator; while for TlBiTe$_2$, we found there exist a negative indirect gap between the bulk conduction band at $M$ point and the bulk valance band near $\Gamma$, making it a semi-metal at proper doping. Interestingly, the unique band structures of TlBiTe$_2$ we observed further suggest TlBiTe$_2$ may be a candidate for topological superconductors.