
We report a direct observation of temperatureinduced topological phase
transition between trivial and topological insulator in HgTe quantum well. By
using a gated Hall bar device, we measure and represent Landau levels in fan
charts at different temperatures and we follow the temperature evolution of a
peculiar pair of "zeromode" Landau levels, which split from the edge of
electronlike and holelike subbands. Their crossing at critical magnetic field
$B_c$ is a characteristic of inverted band structure in the quantum well. By
measuring the temperature dependence of $B_c$, we directly extract the critical
temperature $T_c$, at which the bulk bandgap vanishes and the topological
phase transition occurs. Above this critical temperature, the opening of a
trivial gap is clearly observed.

We have investigated the disorder of epitaxial graphene close to the charge
neutrality point (CNP) by various methods: i) at room temperature, by analyzing
the dependence of the resistivity on the Hall coefficient ; ii) by fitting the
temperature dependence of the Hall coefficient down to liquid helium
temperature; iii) by fitting the magnetoresistances at low temperature. All
methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of
this relatively low disorder, close to the CNP, at low temperature, the sample
resistivity does not exhibit the standard value $\simeq h/4e^2$ but diverges.
Moreover, the magnetoresistance curves have a unique ambipolar behavior, which
has been systematically observed for all studied samples. This is a signature
of both asymmetry in the density of states and inplane charge transfer. The
microscopic origin of this behavior cannot be unambiguously determined.
However, we propose a model in which the SiC substrate steps qualitatively
explain the ambipolar behavior.

We report on the stability of the quantum Hall plateau in wide Hall bars made
from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized
plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T.
At high current density, in the breakdown regime, the longitudinal resistance
oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to
the presence of additional electron reservoirs. The high field experimental
data suggest that these reservoirs induce a continuous increase of the carrier
density up to the highest available magnetic field, thus enlarging the quantum
plateaus. These inplane inhomogeneities, in the form of high carrier density
graphene pockets, modulate the quantum Hall effect breakdown and decrease the
breakdown current.

Superconducting hybrid junctions are revealing a variety of novel effects.
Some of them are due to the special layout of these devices, which often use a
coplanar configuration with relatively large barrier channels and the
possibility of hosting Pearl vortices. A Josephson junction with a quasi ideal
twodimensional barrier has been realized by growing graphene on SiC with Al
electrodes. Chemical Vapor Deposition offers centimeter size monolayer areas
where it is possible to realize a comparative analysis of different devices
with nominally the same barrier. In samples with a graphene gap below 400 nm,
we have found evidence of Josephson coherence in presence of an incipient
BerezinskiiKosterlitzThouless transition. When the magnetic field is cycled,
a remarkable hysteretic collapse and revival of the Josephson supercurrent
occurs. Similar hysteresis are found in granular systems and are usually
justified within the Bean Critical State model (CSM). We show that the CSM,
with appropriate account for the low dimensional geometry, can partly explain
the odd features measured in these junctions.

We show that the spinlattice relaxation in ntype insulating GaAs is
dramatically accelerated at low magnetic fields. The origin of this effect,
that cannot be explained in terms of wellknown diffusionlimited hyperfine
relaxation, is found in the quadrupole relaxation, induced by fluctuating donor
charges. Therefore, quadrupole relaxation, that governs low field nuclear spin
relaxation in semiconductor quantum dots, but was so far supposed to be
harmless to bulk nuclei spins in the absence of optical pumping can be studied
and harnessed in much simpler model environment of nGaAs bulk crystal.

Graphene on silicon carbide (SiC) has proved to be highly successful in Hall
conductance quantization for its homogeneity at the centimetre scale. Robust
Josephson coupling has been measured in coplanar diffusive Al/monololayer
graphene/Al junctions. Graphene on SiC substrates is a concrete candidate to
provide scalability of hybrid Josephson graphene/superconductor devices, giving
also promise of ballistic propagation.

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over
several micrometers and up to room temperature. The key ingredient to achieve
this result is the crystalline quality of GaN quantum wells (QWs) grown on GaN
template substrate. By comparing microphotoluminescence images of two identical
QWs grown on sapphire and on GaN, we reveal the twofold role played by GaN
substrate in the transport of excitons. First, the lower threading dislocation
densities in such structures yield higher exciton radiative efficiency, thus
limiting nonradiative losses of propagating excitons. Second, the absence of
the dielectric mismatch between the substrate and the epilayer strongly limits
the photon guiding effect in the plane of the structure,making exciton
transport easier to distinguish from photon propagation. Our results pave the
way towards roomtemperature gatecontrolled exciton transport in widebandgap
polar heterostructures.

The quantum Hall effect (QHE) theoretically provides a universal standard of
electrical resistance in terms of the Planck constant $h$ and the electron
charge $e$. In graphene, the spacing between the lowest discrete energy levels
occupied by the charge carriers under magnetic field is exceptionally large.
This is promising for a quantum Hall resistance standard more practical in
graphene than in the GaAs/AlGaAs devices currently used in national metrology
institutes. Here, we demonstrate that large QHE devices, made of high quality
graphene grown by propane/hydrogen chemical vapour deposition on SiC
substrates, can surpass stateoftheart GaAs/AlGaAs devices by considerable
margins in their required operational conditions. In particular, in the device
presented here, the Hall resistance is accurately quantized within $1\times
10^{9}$ over a 10T wide range of magnetic field with a remarkable lower bound
at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5
mA. These significantly enlarged and relaxed operational conditions, with a
very convenient compromise of 5 T, 5.1 K and 50 $\mu$A, set the superiority of
graphene for this application and for the new generation of versatile and
userfriendly quantum standards, compatible with a broader industrial use. We
also measured an agreement of the quantized Hall resistance in graphene and
GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{11}$. This
supports the universality of the QHE and its theoretical relation to $h$ and
$e$, essential for the application in metrology, particularly in view of the
forthcoming Syst\`eme International d'unit\'es (SI) based on fundamental
constants of physics, including the redefinition of the kilogram in terms of
$h$.

Replacing GaAs by graphene to realize more practical quantum Hall resistance
standards (QHRS), accurate to within $10^{9}$ in relative value, but operating
at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date,
the required accuracy has been reported, only few times, in graphene grown on
SiC by sublimation of Si, under higher magnetic fields. Here, we report on a
device made of graphene grown by chemical vapour deposition on SiC which
demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4
K. This is explained by a quantum Hall effect with low dissipation, resulting
from strongly localized bulk states at the magnetic length scale, over a wide
magnetic field range. Our results show that graphenebased QHRS can replace
their GaAs counterparts by operating in asconvenient cryomagnetic conditions,
but over an extended magnetic field range. They rely on a promising hybrid and
scalable growth method and a fabrication process achieving lowelectron density
devices.

We investigate the transport of dipolar indirect excitons along the growth
plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially and
timeresolved photoluminescence spectroscopy. The transport in these strongly
disordered quantum wells is activated by dipoledipole repulsion. The latter
induces an emission blue shift that increases linearly with exciton density,
whereas the radiative recombination rate increases exponentially. Under
continuous, localized excitation, we measure a continuous red shift of the
emission, as excitons propagate away from the excitation spot. This shift
corresponds to a steadystate gradient of exciton density, measured over
several tens of micrometers. Timeresolved microphotoluminescence experiments
provide information on the dynamics of recombination and transport of dipolar
excitons. We account for the ensemble of experimental results by solving the
nonlinear driftdiffusion equation. Quantitative analysis suggests that in such
structures, exciton propagation on the scale of 10 to 20 microns is mainly
driven by diffusion, rather than by drift, due to the strong disorder and the
presence of nonradiative defects. Secondary exciton creation, most probably by
the intense higherenergy luminescence, guided along the sample plane, is shown
to contribute to the exciton emission pattern on the scale up to 100 microns.
The exciton propagation length is strongly temperature dependent, the emission
being quenched beyond a critical distance governed by nonradiative
recombination.

We present the magnetoresistance (MR) of highly doped monolayer graphene
layers grown by chemical vapor deposition on 6HSiC. The magnetotransport
studies are performed on a large temperature range, from $T$ = 1.7 K up to room
temperature. The MR exhibits a maximum in the temperature range $120240$ K.
The maximum is observed at intermediate magnetic fields ($B=26$ T), in between
the weak localization and the Shubnikovde Haas regimes. It results from the
competition of two mechanisms. First, the low field magnetoresistance increases
continuously with $T$ and has a purely classical origin. This positive MR is
induced by thermal averaging and finds its physical origin in the energy
dependence of the mobility around the Fermi energy. Second, the high field
negative MR originates from the electronelectron interaction (EEI). The
transition from the diffusive to the ballistic regime is observed. The
amplitude of the EEI correction points towards the coexistence of both long and
short range disorder in these samples.

Traditional spintronics relies on spin transport by charge carriers, such as
electrons in semiconductor crystals. This brings several complications: the
Pauli principle prevents the carriers from moving with the same speed; Coulomb
repulsion leads to rapid dephasing of electron flows. Spinoptronics is a
valuable alternative to traditional spintronics. In spinoptronic devices the
spin currents are carried by electrically neutral bosonic quasiparticles:
excitons or excitonpolaritons. They can form highly coherent quantum liquids
and carry spins over macroscopic distances. The price to pay is a finite
lifetime of the bosonic spin carriers. We present the theory of exciton
ballistic spin transport which may be applied to a range of systems where
bosonic spin transport has been reported, in particular, to indirect excitons
in coupled GaAs/AlGaAs quantum wells. We describe the effect of spinorbit
interaction of electrons and holes on the exciton spin, account for the Zeeman
effect induced by external magnetic fields, long range and short range exchange
splittings of the exciton resonances. We also consider exciton transport in the
nonlinear regime and discuss the definitions of exciton spin current,
polarization current and spin conductivity.

We demonstrate that the carrier concentration of epitaxial graphene devices
grown on the Cface of a SiC substrate is efficiently modulated by a buried
gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC
crystal, 200 nm below the surface, and works well at intermediate temperatures:
40K80K. The Dirac point is observed at moderate gate voltages (120V)
depending upon the surface preparation. For temperatures below 40K, the gate is
inefficient as the buried channel is frozen out. However, the carrier
concentration in graphene remains very close to the value set at T\sim 40K. The
absence of parallel conduction is evidenced by the observation of the
halfinteger quantum Hall effect at various concentrations at T\sim 4K. These
observations pave the way to a better understanding of intrinsic properties of
epitaxial graphene and are promising for applications such as quantum
metrology.

We separate localization and interaction effects in epitaxial graphene
devices grown on the Cface of a 4HSiC substrate by analyzing the low
temperature conductivities. Weak localization and antilocalization are
extracted at low magnetic fields, after elimination of a geometric
magnetoresistance and subtraction of the magnetic field dependent Drude
conductivity. The electron electron interaction correction is extracted at
higher magnetic fields, where localization effects disappear. Both phenomena
are weak but sizable and of the same order of magnitude. If compared to
graphene on silicon dioxide, electron electron interaction on epitaxial
graphene are not significantly reduced by the larger dielectric constant of the
SiC substrate.

Using high temperature annealing conditions with a graphite cap covering the
Cface of an 8deg offaxis 4HSiC sample, large and homogeneous single
epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of
the almost freestanding character of these monolayer graphene sheets, which
was confirmed by magnetotransport measurements. We find a moderate ptype
doping, high carrier mobility and half integer Quantum Hall effect typical of
high quality graphene samples. This opens the way to a fully compatible
integration of graphene with SiC devices on the wafers that constitute the
standard in today's SiC industry.

The magnetoconductance in YBCO grain boundary Josephson junctions, displays
fluctuations at low temperatures of mesoscopic origin. The morphology of the
junction suggests that transport occurs in narrow channels across the grain
boundary line, with a large Thouless energy. Nevertheless the measured
fluctuation amplitude decreases quite slowly when increasing the voltage up to
values about twenty times the Thouless energy, of the order of the nominal
superconducting gap. Our findings show the coexistence of supercurrent and
quasiparticle current in the junction conduction even at high nonequilibrium
conditions. Model calculations confirm the reduced role of quasiparticle
relaxation at temperatures up to 3 Kelvin.

Magnetofluctuations of the normal resistance RN have been reproducibly
observed in YBa2Cu3O7d biepitaxial grain boundary junctions at low
temperatures. We attribute them to mesoscopic transport in narrow channels
across the grain boundary line, occurring in an unusual energy regime. The
Thouless energy appears to be the relevant energy scale. Possible implications
on the understanding of coherent transport of quasiparticles in HTS and of the
dissipation mechanisms are discussed.

Spinorbit interaction in a quantum dot couples far infrared radiation to non
center of mass excitation modes, even for parabolic confinement and dipole
approximation. The intensities of the absorption peaks satisfy the optical sum
rule, giving direct information on the total number of electrons inside the
dot. In the case of a circularly polarized radiation the sum rule is
insensitive to the strength of a Rashba spinorbit coupling due to an electric
field orthogonal to the dot plane, but not to other sources of spinorbit
interaction, thus allowing to discriminate between the two.

We perform the investigations of the resonant tunneling via impurities
embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the
$I(V)$ characteristics measured at 30mK, the contribution of individual donors
is resolved and the fingerprints of phonon assistance in the tunneling process
are seen. The latter is confirmed by detailed analysis of the tunneling rates
and the modeling of the resonant tunneling contribution to the current.
Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge
singularities are observed.

Our study presents experimental measurements of the contact and longitudinal
voltage drops in Hall bars, as a function of the current amplitude. We are
interested in the heating phenomenon which takes place before the breakdown of
the quantum Hall effect, i.e. the prebreakdown regime. Two types of samples
has been investigated, at low temperature (4.2 and 1.5K) and high magnetic
field (up to 13 T). The Hall bars have several different widths, and our
observations clearly demonstrate that the size of the sample influences the
heating phenomenon. By measuring the critical currents of both contact and
longitudinal voltages, as a function of the filling factor (around $i=2$), we
highlight the presence of a high electric field domain near the source contact,
which is observable only in samples whose width is smaller than 400 microns.

This paper reports on an experimental study of the contact resistance of Hall
bars in the Quantum Hall Effect regime while increasing the current through the
sample. These measurements involve also the longitudinal resistance and they
have been always performed before the breakdown of the Quantum Hall Effect. Our
investigations are restricted to the $i=2$ plateau which is used in all
metrological measurements of the von Klitzing constant $R_K$. A particular care
has been taken concerning the configuration of the measurement. Four
configurations were used for each Hall bar by reversing the current and the
magnetic field polarities. Several samples with different width have been
studied and we observed that the critical current for the contact resistance
increases with the width of the Hall bar as previously observed for the
critical current of the longitudinal resistance. The critical currents exhibit
either a linear or a sublinear increase. All our observations are interpreted
in the current understanding of the Quantum hall effect brekdown. Our analysis
suggests that a heated region appears at the current contact, develops and then
extends in the whole sample while increasing the current. Consequently, we
propose to use the contact resistance as an electronic thermometer for the Hall
fluid.

We have calculated the linear magnetoconductance across a vertical parabolic
Quantum Dot with a magnetic field in the direction of the current. Gate voltage
and magnetic field are tuned at the degeneracy point between the occupancies
N=2 and N=3, close to the SingletTriplet transition for N=2. We find that the
conductance is enhanced prior to the transition by nearby crossings of the
levels of the 3 particle dot. Immediately after it is depressed by roughly 1/3,
as long as the total spin S of the 3 electron ground state doesn't change from
S=1/2 to S=3/2, due to spin selection rule.
At low temperature this dip is very sharp, but the peak is recovered by
increasing the temperature.

We have found that the local density of states fluctuations (LDOSF) in a
disordered metal, detected using an impurity in the barrier as a spectrometer,
undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong
magnetic fields, omega _c\tau > 1. We attribute this to the dominant role of
the states near bottoms of Landau bands which give the major contribution to
the LDOSF and are most strongly affected by disorder. We also demonstrate that
in intermediate fields the LDOSF increase with B in accordance with the results
obtained in the diffusion approximation.

Onepoint timeseries measurements limit the observation of threedimensional
fully developed turbulence to one dimension. For onedimensional models, like
multiplicative branching processes, this implies that the energy flux from
large to small scales is not conserved locally. This then renders the random
weights used in the cascade curdling to be different from the multipliers
obtained from a backward averaging procedure. The resulting multiplier
distributions become solutions of a fixpoint problem. With a further
restoration of homogeneity, all observed correlations between multipliers in
the energy dissipation field can be understood in terms of simple
scaleinvariant multiplicative branching processes.

A study of magnetotransport through quantum dots is presented. The model
allows to analyze tunnelling both from bulklike contacts and from 2D
accumulation layers. The fine features in the IV characteristics due to the
quantum dot states are known to be shifted to different voltages depending upon
the value of the magnetic field. While this effect is also well reproduced by
our calculations, in this work we concentrate on the amplitude of each current
resonance as a function of the magnetic field. Such amplitudes show
oscillations reflecting the variation of the density of states at the Fermi
energy in the emitter. Furthermore the amplitude increases as a function of the
magnetic field for certain features while it decreases for others. In
particular we demonstrate that the behaviour of the amplitude of the current
resonances is linked to the value of the angular momentum of each dot level
through which tunnelling occurs. We show that a selection rule on the angular
momentum must be satisfied. As a consequence, tunnelling through specific dot
states is strongly suppresses and sometimes prohibited altogether by the
presence of the magnetic field. This will allow to extract from the
experimental curves detailed information on the nature of the quantum dot
wavefunctions involved in the electronic transport. Furthermore, when
tunnelling occurs from a 2D accumulation layer to the quantum dot, the presence
of a magnetic field hugely increases the strength of some resonant features.
This effect is predicted by our model and, to the best of our knowledge, has
never been observed.