• We study the electronic structure of HgBa$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ (Hg1223 ; T$_{c}$ = 134 K) using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Resonant valence band PES across the O K-edge and Cu L-edge identify correlation satellites originating in O 2p and Cu 3d two-hole final states, respectively. Analyses using the experimental O 2p and Cu 3d partial density of states show quantitatively different on-site Coulomb energy for the Cu-site (U$_{dd}$ = 6.5$\pm$0.5 eV) and O-site (U$_{pp}$ = 1.0$\pm$0.5 eV). Cu$_{2}$O$_{7}$-cluster calculations with non-local screening explain the Cu 2p core level PES and Cu L-edge XAS spectra, confirm the U$_{dd}$ and U$_{pp}$ values, and provide evidence for the Zhang-Rice singlet state in Hg1223. In contrast to other hole-doped cuprates and 3d-transition metal oxides, the present results indicate weakly correlated oxygen holes in Hg1223.
  • We study the electronic structure of an ordered array of poly(para-phenylene) chains produced by surface-catalyzed dehalogenative polymerization of 1,4-dibromobenzene on copper (110). The quantization of unoccupied molecular states is measured as a function of oligomer length by scanning tunneling spectroscopy, with Fermi level crossings observed for chains longer than ten phenyl rings. Angle-resolved photoelectron spectroscopy reveals a graphene-like quasi one-dimensional valence band as well as a direct gap of 1.15 eV, as the conduction band is partially filled through adsorption on the surface. Tight-binding modelling and ab initio density functional theory calculations lead to a full description of the organic band-structure, including the k dispersion, the gap size and electron charge transfer mechanisms which drive the system into metallic behaviour. Therefore the entire band structure of a carbon-based conducting wire has been fully determined. This may be taken as a fingerprint of {\pi}-conjugation of surface organic frameworks.
  • The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.
  • Symmetry dependent scattering effect by minority interface resonance states (IRS) has been evidenced in full-epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs). Two types of samples with and without carbon doped bottom Fe/MgO interface were fabricated to represent two different types of IRS in the minority channel in the vicinity of the Fermi level. By analysis of the first- principles calculated local density of states (LDOS) and the temperature dependence of conductance in parallel configuration at low bias, we show that the IRS in the carbon free sample is dominated by the delta5 symmetry. This has a major contribution on the majority deltai to delta5 channel scattering and explains the enhancement of the delta5 conductance in the parallel configuration at low temperature. Furthermore, the spectral composition of the IRS in the carbon doped interface is found to be dominated by the delta1 symmetry, which is responsible for the suppression of delta5 channel in the parallel conductance.
  • We report on new LEED, STM and ARPES studies of alkali/Si(111) previously established as having a Mott insulating ground state at surface. The observation of a strong temperature dependent Franck-Condon broadening of the surface band together with the novel $\sqrt{3}\times\sqrt{3}\to2(\sqrt{3}\times\sqrt{3})$ charge and lattice ordering below 270 K evidence a surface charge density wave (SCDW) in the strong e-ph coupling limit ($g\approx8$). Both the adiabatic ratio $\hbar\omega_0/t\approx0.8$ and the effective pairing energy $V_{eff}=U-2g\hbar\omega_0\approx-800$ $meV$ are consistent with the possible formation of a bi-polaronic insulating phase consisting of alternating doubly-occupied/unoccupied dangling bonds as expected in the Holstein-Hubbard model.
  • We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.