
We introduce a multiscale framework which combines timedependent
nonequilibrium Green function (TDNEGF) algorithms, scaling linearly in the
number of time steps and describing quantummechanically conduction electrons
in the presence of timedependent fields of arbitrary strength or frequency,
with classical time evolution of local magnetic moments described by the
LandauLifshitzGilbert (LLG) equation. Our TDNEGF+LLG framework can be
applied to a variety of problems where currentdriven spin torque induces
dynamics of magnetic moments as the key resource for next generation
spintronics. Previous approaches to such nonequilibrium manybody system have
neglected noncommutativity of a quantum Hamiltonian of conduction electrons at
different times and, therefore, the impact of timedependent magnetic moments
on electrons which induce pumping of spin and charge currents that, in turn,
can selfconsistently affect the dynamics of magnetic moments themselves. Using
magnetic domain wall (DW) as an example, we predict that its motion will pump
timedependent spin and charge currents (on the top of unpolarized DC charge
current injected through normal metal leads to drive the DW motion), where the
latter can be viewed as a realization of nonadiabatic quantum charge pumping
due to timedependence of the Hamiltonian and leftright symmetry breaking of
the twoterminal device structure. The conversion of AC components of spin
current, whose amplitude increases (decreases) as the DW approaches (distances
from) the normal metal lead, into AC voltage via the inverse spin Hall effect
offers a tool to precisely track the DW position along magnetic nanowire. We
also quantify the DW transient inertial displacement due to its acceleration
and deceleration by pulse current and the entailed spin and charge pumping.

We review a unified approach for computing: (i) spintransfer torque in
magnetic trilayers like spinvalves and magnetic tunnel junction, where
injected charge current flows perpendicularly to interfaces; and (ii)
spinorbit torque in magnetic bilayers of the type
ferromagnet/spinorbitcoupledmaterial, where injected charge current flows
parallel to the interface. Our approach requires to construct the torque
operator for a given Hamiltonian of the device and the steadystate
nonequilibrium density matrix, where the latter is expressed in terms of the
nonequilibrium Green's functions and split into three contributions. Tracing
these contributions with the torque operator automatically yields fieldlike
and dampinglike components of spintransfer torque or spinorbit torque
vector, which is particularly advantageous for spinorbit torque where the
direction of these components depends on the unknowninadvance orientation of
the currentdriven nonequilibrium spin density in the presence of spinorbit
coupling. We provide illustrative examples by computing spintransfer torque in
a onedimensional toy model of a magnetic tunnel junction and realistic
Co/Cu/Co spinvalve, both of which are described by firstprinciples
Hamiltonians obtained from noncollinear density functional theory calculations;
as well as spinorbit torque in a ferromagnetic layer described by a
tightbinding Hamiltonian which includes spinorbit proximity effect within
ferromagnetic monolayers assumed to be generated by the adjacent monolayer
transition metal dichalcogenide.

We demonstrate that a MeijerGfunctionbased resummation approach can be
successfully applied to approximate the Borel sum of divergent series, and thus
to approximate the Borel\'Ecalle summation of resurgent transseries in quantum
field theory (QFT). The proposed method is shown to vastly outperform the
conventional BorelPad\'e and BorelPad\'e\'Ecalle summation methods. The
resulting MeijerG approximants are easily parameterized by means of a
hypergeometric ansatz and can be thought of as a generalization to arbitrary
order of the BorelHypergeometric method [Mera {\it et al.} Phys. Rev. Lett.
{\bf 115}, 143001 (2015)]. Here we illustrate the ability of this technique in
various examples from QFT, traditionally employed as benchmark models for
resummation, such as: 0dimensional $\phi^4$ theory, $\phi^4$ with degenerate
minima, selfinteracting QFT in 0dimensions, and the computation of one and
twoinstanton contributions in the quantummechanical doublewell problem.

Spinmemory loss (SML) of electrons traversing
ferromagneticmetal/heavymetal (FM/HM), FM/normalmetal (FM/NM) and HM/NM
interfaces is a fundamental phenomenon that must be invoked to explain
consistently large number of spintronic experiments. However, its strength
extracted by fitting experimental data to phenomenological semiclassical
theory, which replaces each interface by a fictitious bulk layer, is poorly
understood from a microscopic quantum framework and/or materials properties.
Here we describe ensemble of flowing spin quantum states using spindensity
matrix, so that SML is measured like any decoherence process by the decay of
its offdiagonal elements or, equivalently, by the reduction of the magnitude
of polarization vector. By combining this framework with density functional
theory (DFT) calculations, we examine how all three components of the
polarization vector change at Co/Ta, Co/Pt, Co/Cu, Pt/Cu and Pt/Au interfaces
embedded within Cu/FM/HM/Cu vertical heterostructures. In addition, we use ab
initio Green's functions to compute spectral function and spin texture over FM,
HM and NM monolayers around these interfaces which quantify interfacial
spinorbit coupling, thereby explaining the microscopic origin of SML in
longstanding puzzlessuch as why it is nonzero at Co/Cu interface; why it is
very large at Pt/Cu interface; and why it occurs at perfect interfaces without
any interfacial intermixing.

Recent experiments reporting unexpectedly large spin Hall effect (SHE) in
graphene decorated with adatoms have raised a fierce controversy. We apply
numerically exact Kubo and Landauer Buttiker formulas to realistic models of
golddecorated disordered graphene (including adatom clustering) to obtain the
spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance
as a quantity accessible to experiments. Large spin Hall angles of 0.1 are
obtained at zerotemperature, but their dependence on adatom clustering differs
from the predictions of semiclassical transport theories. Furthermore, we find
multiple background contributions to the nonlocal resistance, some of which are
unrelated to SHE or any other spindependent origin, as well as a strong
suppression of SHE at room temperature. This motivates us to design a
multiterminal graphene geometry which suppresses these background contributions
and could, therefore, quantify the upper limit for spin current generation in
twodimensional materials.

The discovery of the integer quantum Hall effect in the early eighties of the
last century, with highly precise quantization values for the Hall conductance
in multiples of $e^2/h$, has been the first fascinating manifestation of the
topological state of matter driven by magnetic field and disorder, and related
to the formation of nondissipative current flow. In 2005, several new
phenomena such as the spin Hall effect and the quantum spin Hall effect were
predicted in the presence of strong spinorbit coupling and vanishing external
magnetic field. More recently, the Zeeman spin Hall effect and the formation of
valley Hall topological currents have been introduced for graphenebased
systems, under timereversal or inversion symmetrybreaking conditions,
respectively. This review presents a comprehensive coverage of all these Hall
effects in disordered graphene from the perspective of numerical simulations of
quantum transport in twodimensional bulk systems (by means of the Kubo
formalism) and multiterminal nanostructures (by means of the
LandauerB\"{u}ttiker scattering and nonequilibrium Green function approaches).
In contrast to usual twodimensional electron gases, the presence of defects in
graphene generates more complex electronic features such as electronhole
asymmetry, defect resonances or percolation effect between localized impurity
states, which, together with extra degrees of freedom (sublattice pseudospin,
valley isospin), bring a higher degree of complexity and enlarge the transport
phase diagram.

Based on density functional theory (DFT) calculations, we predict that a
monolayer of OsCl$_3$a layered material whose interlayer coupling is weaker
than in graphitepossesses a quantum anomalous Hall (QAH) insulating phase
generated by the combination of honeycomb lattice of osmium atoms, their strong
spinorbit coupling (SOC) and ferromagnetic ground state with {\em inplane}
easyaxis. The band gap opened by SOC is \mbox{$E_g \simeq 67$ meV} (or
\mbox{$\simeq 191$ meV} if the easyaxis can be tilted out of the plane by an
external electric field), and the estimated Curie temperature of such {\em
anisotropic planar rotator} ferromagnet is $T_\mathrm{C} \lesssim 350$ K. The
Chern number $\mathcal{C}=1$, generated by the manifold of Os $t_{2g}$ bands
crossing the Fermi energy, signifies the presence of a single chiral edge state
in nanoribbons of finite width, where we further show that edge states are
spatially narrower for zigzag than armchair edges and investigate edgestate
transport in the presence of vacancies at Os sites. Since $5d$ electrons of Os
exhibit {\em both} strong SOC and moderate correlation effects, we employ DFT+U
calculations to show how increasing onsite Coulomb repulsion $U$: gradually
reduces $E_g$ while maintaining $\mathcal{C} = 1$ for $0 < U < U_c$; leads to
metallic phase with $E_g = 0$ at $U_c$; and opens the gap of topologically
trivial Mott insulating phase with $\mathcal{C}=0$ for $U > U_c$.

Motivated by recent experiments observing spinorbit torque (SOT) acting on
the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of
a threedimensional topological insulator (TI), we investigate the origin of
the SOT and the magnetization dynamics in such systems. We predict that lateral
F/TI bilayers of finite length, sandwiched between two normal metal leads, will
generate a large antidampinglike SOT per very low charge current injected
parallel to the interface. The large values of antidampinglike SOT are {\it
spatially localized} around the transverse edges of the F overlayer. Our
analysis is based on adiabatic expansion (to first order in $\partial
\vec{m}/\partial t$) of timedependent nonequilibrium Green functions (NEGFs),
describing electrons pushed out of equilibrium both by the applied bias voltage
and by the slow variation of a classical degree of freedom [such as
$\vec{m}(t)$]. From it we extract formulas for spin torque and charge pumping,
which show that they are reciprocal effects to each other, as well as Gilbert
damping in the presence of SO coupling. The NEGFbased formula for SOT
naturally splits into four components, determined by their behavior (even or
odd) under the time and bias voltage reversal. Their complex angular dependence
is delineated and employed within LandauLifshitzGilbert simulations of
magnetization dynamics in order to demonstrate capability of the predicted SOT
to efficiently switch $\vec{m}$ of a perpendicularly magnetized F overlayer.

A newly developed hypergeometric resummation technique [H. Mera et al., Phys.
Rev. Lett. 115, 143001 (2015)] provides an easytouse recipe to obtain
conserving approximations within the selfconsistent nonequilibrium manybody
perturbation theory. We demonstrate the usefulness of this technique by
calculating the phononlimited electronic current in a model of a
singlemolecule junction within the selfconsistent Born approximation for the
electronphonon interacting system, where the perturbation expansion for the
nonequilibrium Green function in powers of the free bosonic propagator
typically consists of a series of noncrossing \sunset" diagrams.
Hypergeometric resummation preserves conservation laws and it is shown to
provide substantial convergence acceleration relative to more standard
approaches to selfconsistency. This result strongly suggests that the
convergence of the selfconsistent \sunset" series is limited by a branchcut
singularity, which is accurately described by Gauss hypergeometric functions.
Our results showcase an alternative approach to conservation laws and
selfconsistency where expectation values obtained from conserving perturbation
expansions are \summed" to their selfconsistent value by analytic continuation
functions able to mimic the convergencelimiting singularity structure.

Studies of atomic systems in electric fields are challenging because of the
diverging perturbation series. However, physically meaningful Stark shifts and
ionization rates can be found by analytical continuation of the series using
appropriate branch cut functions. We apply this approach to lowdimensional
hydrogen atoms in order to study the effects of reduced dimensionality. We find
that modifications by the electric field are strongly suppressed in reduced
dimensions. This finding is explained from a Landautype analysis of the
ionization process.

We predict that unpolarized charge current injected into a ballistic thin
film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a
{\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface.
Furthermore, the nonequilibrium spin texture will extend into $\simeq 2$ nm
thick layer below the TI surfaces due to penetration of evanescent
wavefunctions from the metallic surfaces into the bulk of TI. Averaging
$\mathbf{S}(\mathbf{r})$ over few \AA{} along the longitudinal direction
defined by the current flow reveals large component pointing in the transverse
direction. In addition, we find an order of magnitude smaller outofplane
component when the direction of injected current with respect to Bi and Se
atoms probes the largest hexagonal warping of the Diraccone dispersion on TI
surface. Our analysis is based on an extension of the nonequilibrium Green
functions combined with density functional theory (NEGF+DFT) to situations
involving noncollinear spins and spinorbit coupling. We also demonstrate how
DFT calculations with properly optimized local orbital basis set can precisely
match putatively more accurate calculations with planewave basis set for the
supercell of Bi$_2$Se$_3$.

The Stark effect in hydrogen and the cubic anharmonic oscillator furnish
examples of quantum systems where the perturbation results in a certain
ionization probability by tunneling processes. Accordingly, the perturbed
groundstate energy is shifted and broadened, thus acquiring an imaginary part
which is considered to be a paradigm of nonperturbative behavior. Here we
demonstrate how the low order coefficients of a divergent perturbation series
can be used to obtain excellent approximations to both real and imaginary parts
of the perturbed ground state eigenenergy. The key is to use analytic
continuation functions with a built in analytic structure within the complex
plane of the coupling constant, which is tailored by means of BenderWu
dispersion relations. In the examples discussed the analytic continuation
functions are Gauss hypergeometric functions, which take as input fourth order
perturbation theory and return excellent approximations to the complex
perturbed eigenvalue. These functions are Borelconsistent and dramatically
outperform widely used Pad\'e and BorelPad\'e approaches, even for rather
large values of the coupling constant.

Using firstprinciples quantum transport simulations, based on the
nonequilibrium Green function formalism combined with density functional theory
(NEGF+DFT), we examine changes in the total and local electronic currents
within the plane of graphene nanoribbon with zigzag edges (ZGNR) hosting a
nanopore which are induced by inserting a DNA nucleobase into the pore. We find
a sizable change of the zerobias conductance of twoterminal ZGNR + nanopore
device after the nucleobase is placed into the most probable position
(according to molecular dynamics trajectories) inside the nanopore of a small
diameter \mbox{$D=1.2$ nm}. Although such effect decreases as the nanopore size
is increased to \mbox{$D=1.7$ nm}, the contrast between currents in ZGNR +
nanopore and ZGNR + nanopore + nucleobase systems can be enhanced by applying a
small bias voltage $V_b \lesssim 0.1$ V. This is explained microscopically as
being due to DNA nucleobaseinduced modification of spatial profile of local
current density around the edges of ZGNR. We repeat the same analysis using
NEGF combined with selfconsistent charge density functional tightbinding
(NEGF+SCCDFTB) or selfconsistent extended H\"{u}ckel (NEGF+SCEH)
semiempirical methodologies. The large discrepancy we find between the results
obtained from NEGF+DFT vs. those obtained from NEGF+SCCDFTB or NEGF+SCEH
approaches could be of great importance when selecting proper computational
algorithms for {\em in silico} design of optimal nanoelectronic sensors for
rapid DNA sequencing.

Using the chargeconserving FloquetGreen function approach to open quantum
systems driven by external time periodic potential, we analyze how spin current
pumped (in the absence of any dc bias voltage) by the precessing magnetization
of a ferromagnetic (F) layer is injected {\em laterally} into the interface
with strong spinorbit coupling (SOC) and converted into charge current flowing
in the same direction. In the case of metallic interface with the Rashba SOC
used in experiments [Nature Comm. {\bf 4}, 2944 (2013)], both spin
$I^{S_\alpha}$ and charge $I$ current flow within it where $I/I^{S_\alpha}
\simeq$ 28\% (depending on the precession cone angle), while for
F/topologicalinsulator (F/TI) interface employed in related experiments
(arXiv:1312.7091) the conversion efficiency is greatly enhanced $I/I^{S_\alpha}
\simeq$ 4060\% due to perfect spinmomentum locking on the surface of TI. The
spintocharge conversion occurs also when spin current is pumped {\em
vertically} through the F/TI interface with smaller efficiency $I/I^{S_\alpha}
\sim 0.001\%$, but with charge current signal being sensitive to whether the
Dirac fermions at the interface are massive or massless.

We study the transverse spinSeebeck effect (SSE) on the surface of a
threedimensional topological insulator (TI) thin film, such as Bi$_2$Se$_3$,
which is sandwiched between two normal metal leads. The temperature bias
$\Delta T$ applied between the leads generates surface charge current which
becomes spinpolarized due to strong spinorbit coupling on the TI surface,
with polarization vector acquiring a component $P_x \simeq 60%$ {\em parallel
to the direction of transport}. When the third nonmagnetic voltage probe is
attached to the portion of the TI surface across its width $L_y$, pure spin
current will be injected into the probe where the inverse spin Hall effect
(ISHE) converts it into a voltage signal
\mbox{$V_\mathrm{ISHE}^\mathrm{max}/\Delta T \simeq 2.5$ $\mu$V/K} (assuming
the SH angle of Pt voltage probe and $L_y=1$ mm). The existence of predicted
nonequilibrium spinpolarization parallel to the direction of electronic
transport and the corresponding electrondriven SSE crucially relies on
orienting quintuple layers (QLs) of Bi$_2$Se$_3$ {\em orthogonal} to the TI
surface and {\em tilted} by $45^\circ$ with respect to the direction of
transport. Our analysis is based on the LandauerB\"{u}ttikertype formula for
spin currents in the leads of a multiterminal quantumcoherent junction, which
is constructed using nonequilibrium Green function formalism within which we
show how to take into account arbitrary orientation of QLs via the selfenergy
describing coupling between semiinfinite normal metal leads and TI.

We develop a numerically exact scheme for resumming certain classes of
Feynman diagrams in the selfconsistent perturbation expansion for the electron
and magnon selfenergies in the nonequilibrium Green function formalism applied
to a coupled electronmagnon (\mbox{em}) system which is driven out of
equilibrium by the applied finite bias voltage. Our scheme operates with the
electronic and magnonic GFs and the corresponding selfenergies viewed as
matrices in the Keldysh space, rather than conventionally extracting their
retarded and lesser components. This is employed to understand the effect of
inelastic \mbox{em} scattering on charge and spin current vs. bias voltage
$V_b$ in F/I/F magnetic tunnel junctions (MTJs), which are modeled on a
onedimensional (1D) tightbinding lattice for the electronic subsystem and 1D
Heisenberg model for the magnonic subsystem. For this purpose, we evaluate Fock
diagram for the electronic selfenergy and the electronhole polarization
bubble diagram for the magnonic selfenergy. The respective electronic and
magnonic GF lines within these diagrams are the fully interacting ones, thereby
requiring to solve the ensuing coupled system of nonlinear integral equations
selfconsistently. Despite using the 1D model and treating \mbox{em}
interaction in manybody fashion only within a small active region consisting
of few lattice sites around the F/I interface, our analysis captures essential
features of the socalled zerobias anomaly observed in both MgO and
AlO$_x$based realistic 3D MTJs where the second derivative $d^2 I/dV_b^2$
(i.e., inelastic electron tunneling spectrum) of charge current exhibits sharp
peaks of opposite sign on either side of the zero bias voltage.

Designing thermoelectric materials with high figure of merit $ZT=S^2 G
T/\kappa$ requires fulfilling three often irreconcilable conditions, i.e., the
high electrical conductance $G$, small thermal conductance $\kappa$ and high
Seebeck coefficient $S$. Nanostructuring is one of the promising ways to
achieve this goal as it can substantially suppress lattice contribution to
$\kappa$. However, it may also unfavorably influence the electronic transport
in an uncontrollable way. Here we theoretically demonstrate that this issue can
be ideally solved by fabricating graphene nanoribbons with heavy adatoms and
nanopores. These systems, acting as a twodimensional topological insulator
with robust helical edge states carrying electrical current, yield a highly
optimized power factor $S^2G$ per helical conducting channel. Concurrently,
their array of nanopores impedes the lattice thermal conduction through the
bulk. Using quantum transport simulations coupled with firstprinciples
electronic and phononic band structure calculations, the thermoelectric figure
of merit is found to reach its maximum $ZT \simeq 3$ at $T \simeq 40$ K. This
paves a way to design high$ZT$ materials by exploiting the nontrivial topology
of electronic states through nanostructuring.

We simulate quantum transport between a graphene nanoribbon (GNR) and a
singlewalled carbon nanotube (CNT) where electrons traverse vacuum gap between
them. The GNR covers CNT over a nanoscale region while their relative rotation
is 90 degrees, thereby forming a fourterminal crossbar where the bias voltage
is applied between CNT and GNR terminals. The CNT and GNR are chosen as either
semiconducting (s) or metallic (m) based on whether their twoterminal
conductance exhibits a gap as a function of the Fermi energy or not,
respectively. We find nonlinear currentvoltage (IV) characteristics in all
three investigated devicesmGNRsCNT, sGNRsCNT and mGNRmCNT
crossbarswhich are asymmetric with respect to changing the bias voltage from
positive to negative. Furthermore, the IV characteristics of mGNRsCNT
crossbar exhibits negative differential resistance (NDR) with low onset voltage
$V_\mathrm{NDR} \simeq 0.25$ V and peaktovalley current ratio $\simeq 2.0$.
The overlap region of the crossbars contains only $\simeq 460$ carbon and
hydrogen atoms which paves the way for nanoelectronic devices ultrascaled well
below the smallest horizontal length scale envisioned by the international
technology roadmap for semiconductors. Our analysis is based on the
nonequilibrium Green function formalism combined with density functional theory
(NEGFDFT), where we also provide an overview of recent extensions of NEGFDFT
framework (originally developed for twoterminal devices) to multiterminal
devices.

Experiments observing spin density and spin currents (responsible for, e.g.,
spintransfer torque) in spintronic devices measure only the nonequilibrium
contributions to these quantities, typically driven by injecting unpolarized
charge current or by applying external timedependent fields. On the other
hand, theoretical approaches to calculate them operate with both the
nonequilibrium (carried by electrons around the Fermi surface) and the
equilibrium (carried by the Fermi sea electrons) contributions. Thus, an
unambiguous procedure should remove the equilibrium contributions, thereby
rendering the nonequilibrium ones which are measurable and satisfy the
gaugeinvariant condition according to which expectation values of physical
quantities should not change when electric potential everywhere is shifted by a
constant amount. Using the framework of nonequilibrium Green functions, we
delineate such procedure which yields the proper gaugeinvariant nonequilibrium
density matrix in the linearresponse and elastic transport regime for
currentcarrying steady state of an open quantum system connected to two
macroscopic reservoirs. Its usage is illustrated by computing: (i) conventional
spintransfer torque (STT) in asymmetric F/I/F magnetic tunnel junctions
(MTJs); (ii) unconventional STT in asymmetric N/I/F semiMTJs with the strong
Rashba spinorbit coupling (SOC) at the I/F interface and injected current
perpendicular to that plane; and (iii) currentdriven spin density within a
clean ferromagnetic Rashba spinsplit twodimensional electron gas (2DEG) which
generates SO torque in laterally patterned N/F/I heterostructures when such
2DEG is located at the N/F interface and injected charge current flows parallel
to the plane.

Using the nonequilibrium Green function formalism combined with density
functional theory, we study finitebias quantum transport in Ni/Gr_n/Ni
vertical heterostructures where $n$ graphene layers are sandwiched between two
semiinfinite Ni(111) electrodes. We find that recently predicted "pessimistic"
magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b
\rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devices
promising for spintorquebased device applications. In addition, for parallel
orientations of the Ni magnetizations, the $n=5$ junction exhibits a pronounced
negative differential resistance as the bias voltage is increased from $V_b=0$
V to $V_b \simeq 0.5$ V. We confirm that both of these nonequilibrium effects
hold for different types of bonding of Gr on the Ni(111) surface while
maintaining Bernal stacking between individual Gr layers.

We predict an unconventional spintransfer torque (STT) acting on the
magnetization of a free ferromagnetic (F) layer within N/TI/F vertical
heterostructures which originates from strong spinorbit coupling (SOC) on the
surface of a threedimensional topological insulator (TI), as well as from
charge current becoming spinpolarized in the direction of transport as it
flows from the normal metal (N) across the bulk of the TI slab. Unlike
conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the
inplane STT component is nonzero in the linear response, both the inplane
and perpendicular torque are sizable in N/TI/F junctions while not requiring
fixed F' layer as spinpolarizer which is advantageous for spintronic
applications. Using the nonequilibrium BornOppenheimer treatment of
interaction between fast conduction electrons and slow magnetization, we derive
a general Keldysh Green functionbased STT formula which makes it possible to
analyze torque in the presence of SOC either in the bulk or at the interface of
the free F layer.

We analyze electronic and phononic quantum transport through zigzag or chiral
graphene nanoribbons (GNRs) perforated with an array of nanopores. Since local
charge current profiles in these GNRs are peaked around their edges, drilling
nanopores in their interior does not affect such edge charge currents while
drastically reducing heat current carried by phonons in sufficiently long
wires. The combination of these two effects can yield highly efficient
thermoelectric devices with maximum $ZT \simeq 11$ at liquid nitrogen
temperature and $ZT \simeq 4$ at room temperature achieved in $\sim 1$ $\mu$m
long zigzag GNRs with nanopores of variable diameter and spacing between them.
Our analysis is based on the $\pi$orbital tightbinding Hamiltonian with up to
third nearestneighbor hopping for electronic subsystem, the empirical
fourthnearestneighbor model for phononic subsystem, and nonequilibrium Green
function formalism to study quantum transport in both of these models.

Motivated by the recent experimental observation [D. A. Abanin et al.,
Science 323, 328 (2011)] of nonlocality in magnetotransport near the Dirac
point in sixterminal graphene Hall bars, for a wide range of temperatures and
magnetic fields, we develop a nonequilibrium Green function (NEGF) theory of
this phenomenon. In the phasecoherent regime and strong magnetic field, we
find large spin Hall (SH) conductance in fourterminal bridges, where the SH
current is pure only at the Dirac point (DP), as well as the nonlocal voltage
at a remote location in sixterminal bars where the direct and inverse SH
effect operate at the same time. The "momentumrelaxing" dephasing reduces
their values at the DP by two orders of magnitude while concurrently washing
out any features away from the DP. Our theory is based on the MeirWingreen
formula with dephasing introduced via phenomenological manybody selfenergies,
which is then linearized for multiterminal geometries to extract currents and
voltages.

We develop a timedependent nonequilibrium Green function (NEGF) approach to
the problem of spin pumping by precessing magnetization in one of the
ferromagnetic layers within F/I/F magnetic tunnel junctions (MTJs) or F/I/N
semiMTJs in the presence of intrinsic Rashba spinorbit coupling (SOC) at the
F/I interface or the extrinsic SOC in the bulk of F layers of finite thickness
(Fferromagnet; Nnormal metal; Iinsulating barrier). To express the
timeaveraged pumped charge current, or the corresponding dc voltage signal in
open circuits that was measured in recent experiments on semiMTJs [T. Moriyama
et al., Phys. Rev. Lett. 100, 067602 (2008)], we construct a novel solution for
the doubletimeFouriertransformed NEGFs. The two energy arguments of NEGFs in
this representation are connected by the Floquet theorem describing multiphoton
emission and absorption processes. Within this fully quantummechanical
treatment of the conduction electrons, we find that: (i) only in the presence
of the interfacial Rashba SOC the nonzero dc pumping voltage in F/I/N semiMTJ
can emerge at the adiabatic level (i.e., proportional to microwave frequency);
(ii) a unique signature of this charge pumping phenomenon, which disappears if
Rashba SOC is not located with the precessing F layer, is dc pumping voltage
that changes sign as the function of the precession cone angle; (iii) unlike
standard spin pumping in the absence of SOCs, where one emitted or absorbed
microwave photon is sufficient to match the exact solution in the frame
rotating with the magnetization, the presence of the Rashba SOC requires to
take into account up to ten photons in order to reach the asymptotic value of
pumped charge current; (iv) disorder within F/I/F MTJs can enhance the dc
pumping voltage in the quasiballistic transport regime; ...

We overview nonequilibrium Green function combined with density functional
theory (NEGFDFT) modeling of independent electron and phonon transport in
nanojunctions with applications focused on a new class of thermoelectric
devices where a single molecule is attached to two metallic zigzag graphene
nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make
possible injection of evanescent wavefunctions from ZGNRs, so that their
overlap within the molecular region generates a peak in the electronic
transmission. Additionally, the spatial symmetry properties of the transverse
propagating states in the ZGNR electrodes suppress holelike contributions to
the thermopower. Thus optimized thermopower, together with diminished phonon
conductance through a ZGNR/molecule/ZGNR inhomogeneous structure, yields the
thermoelectric figure of merit ZT~0.5 at room temperature and 0.5<ZT<2.5 below
liquid nitrogen temperature. The reliance on evanescent mode transport and
symmetry of propagating states in the electrodes makes the
electronictransportdetermined power factor in this class of devices largely
insensitive to the type of sufficiently short conjugated organic molecule,
which we demonstrate by showing that both 18annulene and C10 molecule
sandwiched by the two ZGNR electrodes yield similar thermopower. Thus, one can
search for molecules that will further reduce the phonon thermal conductance
(in the denominator of ZT) while keeping the electronic power factor (in the
nominator of ZT) optimized. We also show how often employed Brenner empirical
interatomic potential for hydrocarbon systems fails to describe phonon
transport in our singlemolecule nanojunctions when contrasted with
firstprinciples results obtained via NEGFDFT methodology.