• ### Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy(1505.06642)

High resolution angle-resolved photoemission measurements have been carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7 K. Combined with theoretical calculations, we have discovered for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deep below the Fermi level at ~1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deep below the Fermi level provides a unique system to explore for new phenomena and properties and opens a door for finding new topological materials in transition metal chalcogenides.

• ### Carrier-Concentration Dependence of the Pseudogap Ground State of Superconducting Bi2Sr2-xLaxCuO6+delta Revealed by 63,65Cu-Nuclear Magnetic Resonance in Very High Magnetic Fields(1008.4277)

We report the results of the Knight shift by 63,65Cu-nuclear-magnetic resonance (NMR) measurements on single-layered copper-oxide Bi2Sr2-xLaxCuO6+delta conducted under very high magnetic fields up to 44 T. The magnetic field suppresses superconductivity completely and the pseudogap ground state is revealed. The 63Cu-NMR Knight shift shows that there remains a finite density of states (DOS) at the Fermi level in the zero-temperature limit, which indicates that the pseudogap ground state is a metallic state with a finite volume of Fermi surface. The residual DOS in the pseudogap ground state decreases with decreasing doping (increasing x) but remains quite large even at the vicinity of the magnetically ordered phase of x > 0.8, which suggests that the DOS plunges to zero upon approaching the Mott insulating phase.
• ### Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy(0906.2674)

The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations. In YBa2Cu3O6+x, similar to all other doped cuprates studied so far, a strong shift of the chemical potential at low hole doping is detected. However, the results for the inverse charge susceptibility at small x shows a large variation between different doped cuprates. The results are discussed in view of various theoretical models. None of these models turns out to be satisfactory.