
The lowenergy quasiparticles of Weyl semimetals are a condensedmatter
realization of the Weyl fermions introduced in relativistic field theory.
Chiral anomaly, the nonconservation of the chiral charge under parallel
electric and magnetic fields, is arguably the most important phenomenon of Weyl
semimetals and has been explained as an imbalance between the occupancies of
the gapless, zeroth Landau levels with opposite chiralities. This widely
accepted picture has served as the basis for subsequent studies. Here we report
the breakdown of the chiral anomaly in Weyl semimetals in a strong magnetic
field based on ab initio calculations. A sizable energy gap that depends
sensitively on the direction of the magnetic field may open up due to the
mixing of the zeroth Landau levels associated with the oppositechirality Weyl
points that are away from each other in the Brillouin zone. Our study provides
a theoretical framework for understanding a wide range of phenomena closely
related to the chiral anomaly in topological semimetals, such as
magnetotransport, thermoelectric responses, and plasmons, to name a few.

Graphene and related twodimensional materials are promising candidates for
atomically thin, flexible, and transparent optoelectronics. In particular, the
strong lightmatter interaction in graphene has allowed for the development of
stateoftheart photodetectors, optical modulators, and plasmonic devices. In
addition, electrically biased graphene on SiO2 substrates can be used as a
lowefficiency emitter in the midinfrared range. However, emission in the
visible range has remained elusive. Here we report the observation of bright
visiblelight emission from electrically biased suspended graphenes. In these
devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K)
become spatially localised at the centre of graphene layer, resulting in a
1000fold enhancement in the thermal radiation efficiency. Moreover, strong
optical interference between the suspended graphene and substrate can be
utilized to tune the emission spectrum. We also demonstrate the scalability of
this technique by realizing arrays of chemicalvapourdeposited graphene bright
visiblelight emitters. These results pave the way towards the realisation of
commercially viable largescale, atomicallythin, flexible and transparent
light emitters and displays with lowoperation voltage, and graphenebased,
onchip ultrafast optical communications.

We have investigated the electronic structure of charged bilayer and trilayer
phoshporene using firstprinciples, densityfunctionaltheory calculations. We
find that the effective dielectric constant for an external electric field
applied perpendicular to phosphorene layers increases with the charge density
and is twice as large as in an undoped system if the electron density is around
$5\times10^{13}$cm$^{2}$. It is known that if fewlayer phosphorene is placed
under such an electric field, the electron band gap decreases and if the
strength of the electric field is further increased, the band gap closes. We
show that the electronic screening due to added charge carriers reduces the
amount of this reduction in the band gap and increases the critical strength of
the electric field for gap closure. If the electron density is around
$4\times10^{13}$cm$^{2}$, for example, this critical field for trilayer
phosphorene is 40\% higher than that for a chargeneutral system. The results
are directly relevant to experiments on fewlayer phosphorene with top and
bottom electrical gates and / or with chemical dopants.

It was previously believed that the Bloch electronic states of nonmagnetic
materials with inversion symmetry cannot have finite spin polarizations.
However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387393 (2014)]
on local spin polarizations of Bloch states in nonmagnetic, centrosymmetric
materials, the scope of spintronics has been significantly broadened. Here, we
show, using a framework that is universally applicable independent of whether
hidden spin polarizations are small (e.g., diamond, Si, Ge, and GaAs) or large
(e.g., MoS2 and WSe2), that the corresponding quantity arising from orbital 
instead of spin  degrees of freedom, the hidden orbital polarization, is (i)
much more abundant in nature since it exists even without spinorbit coupling
and (ii) more fundamental since the interband matrix elements of the
sitedependent orbital angular momentum operator determines the hidden spin
polarization. We predict that the hidden spin polarization of transition metal
dichalcogenides is reduced significantly upon compression. We suggest
experimental signatures of hidden orbital polarization from photoemission
spectroscopies and demonstrate that the currentinduced hidden orbital
polarization may play a far more important role than its spin counterpart in
antiferromagnetic information technology by calculating the currentdriven
antiferromagnetism in compressed silicon.

Strong chargespin coupling is found in a layered transitionmetal
trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the
electronic structure using several experimental and theoretical tools:
spectroscopic ellipsometry, xray absorption and photoemission spectroscopy,
and densityfunctional calculations. NiPS3 displays an anomalous shift in the
optical spectral weight at the magnetic ordering temperature, reflecting a
strong coupling between the electronic and magnetic structures. Xray
absorption, photoemission and optical spectra support a selfdoped ground state
in NiPS3. Our work demonstrates that layered transitionmetal trichalcogenide
magnets are a useful candidate for the study of correlatedelectron physics in
twodimensional magnetic material.

Magnetism in twodimensional materials is not only of fundamental scientific
interest but also a promising candidate for numerous applications. However,
studies so far, especially the experimental ones, have been mostly limited to
the magnetism arising from defects, vacancies, edges or chemical dopants which
are all extrinsic effects. Here, we report on the observation of intrinsic
antiferromagnetic ordering in the twodimensional limit. By monitoring the
Raman peaks that arise from zone folding due to antiferromagnetic ordering at
the transition temperature, we demonstrate that FePS3 exhibits an Isingtype
antiferromagnetic ordering down to the monolayer limit, in good agreement with
the Onsager solution for twodimensional orderdisorder transition. The
transition temperature remains almost independent of the thickness from bulk to
the monolayer limit with TN ~118 K, indicating that the weak interlayer
interaction has little effect on the antiferromagnetic ordering.

Graphene, as a semimetal with the largest known thermal conductivity, is an
ideal system to study the interplay between electronic and lattice
contributions to thermal transport. While the total electrical and thermal
conductivity have been extensively investigated, a detailed firstprinciples
study of its electronic thermal conductivity is still missing. Here, we first
characterize the electronphonon intrinsic contribution to the electronic
thermal resistivity of graphene as a function of doping using electronic and
phonon dispersions and electronphonon couplings calculated from first
principles at the level of densityfunctional theory and manybody perturbation
theory (GW). Then, we include extrinsic electronimpurity scattering using
lowtemperature experimental estimates. Under these conditions, we find that
the inplane electronic thermal conductivity of doped graphene is ~300 W/mK at
room temperature, independently of doping. This result is much larger than
expected, and comparable to the total thermal conductivity of typical metals,
contributing ~10 % to the total thermal conductivity of bulk graphene. Notably,
in samples whose physical or domain sizes are of the order of few micrometers
or smaller, the relative contribution coming from the electronic thermal
conductivity is more important than in the bulk limit, since lattice thermal
conductivity is much more sensitive to sample or grain size at these scales.
Last, when electronimpurity scattering effects are included, we find that the
electronic thermal conductivity is reduced by 30 to 70 %. We also find that the
WiedemannFranz law is broadly satisfied at low and high temperatures, but with
the largest deviations of 2050 % around room temperature.

We present a theory based on firstprinciples calculations explaining (i) why
the tunability of spin polarizations of photoelectrons from Bi$_2$Se$_3$ (111)
depends on the band index and Bloch wavevector of the surface state and (ii)
why such tunability is absent in the case of isosymmetric Au (111). The results
provide not only an explanation for the recent, puzzling experimental
observations but also a guide toward making highlytunable spinpolarized
electron sources from topological insulators.

A socalled artificial graphene is an artificial material whose lowenergy
carriers are described by the massless Dirac equation. Applying a periodic
potential with triangular symmetry to a twodimensional electron gas is one way
to make such a material. According to recent experimental results, it is now
possible to realize an artificial graphene in the lab and to even apply an
additional lateral, onedimensional periodic potential to it. We name the
latter system an artificial graphene superlattice in order to distinguish it
from a genuine graphene superlattice made from graphene. In this study, we
investigate the electronic structure of artificial graphene superlattices,
which exhibit the emergence of energy band gaps, merging and splitting of the
Dirac points, etc. Then, from a similar investigation on genuine graphene
superlattices, we show that many of these features originate from the coupling
between Dirac fermions residing in two different valleys, the intervalley
coupling. Furthermore, contrary to previous studies, we find that the effects
of intervalley coupling on the electronic structure cannot be ignored no matter
how long the spatial period of the superlattice is.

The ab initio $GW$ method is considered as the most accurate approach for
calculating the band gaps of semiconductors and insulators. Yet its application
to transition metal oxides (TMOs) has been hindered by the failure of
traditional approximations developed for conventional semiconductors. In this
work, we examine the effects of these approximations on the values of band gaps
for ZnO, Cu$_2$O, and TiO$_2$. In particular, we explore the origin of the
differences between the two widely used plasmonpole models. Based on the
comparison of our results with the experimental data and previously published
calculations, we discuss which approximations are suitable for TMOs and why.

Electronphonon coupling in graphene is extensively modeled and simulated
from first principles. We find that using an accurate model for the
polarizations of the acoustic phonon modes is crucial to obtain correct
numerical results. The interactions between electrons and acoustic phonon
modes, the gauge field and deformation potential, are calculated at the DFT
level in the framework of linear response. The zeromomentum limit of acoustic
phonons is interpreted as a strain pattern, allowing the calculation of the
acoustic gauge field parameter in the GW approximation. The role of electronic
screening on the electronphonon matrix elements is investigated. We then solve
the Boltzmann equation semianalytically in graphene, including both acoustic
and optical phonon scattering. We show that, in the BlochGr\"uneisen and
equipartition regimes, the electronic transport is mainly ruled by the
unscreened acoustic gauge field, while the contribution due to the deformation
potential is negligible and strongly screened. By comparing with experimental
data, we show that the contribution of acoustic phonons to resistivity is
doping and substrateindependent. The DFT+GW approach underestimates this
contribution to resistivity by about 30 %. Above 270K, the calculated
resistivity underestimates the experimental one more severely, the
underestimation being larger at lower doping. We show that, beside remote
phonon scattering, a possible explanation for this disagreement is the
electronelectron interaction that strongly renormalizes the coupling to
intrinsic opticalphonon modes. Finally, after discussing the validity of the
Matthiessen rule in graphene, we derive simplified analytical solutions of the
Boltzmann equation to extract the coupling to acoustic phonons, related to the
straininduced gauge field, directly from experimental data.

Electron supercollimation, in which a wavepacket is guided to move
undistorted along a selected direction, is a highly desirable property that has
yet been realized experimentally. Disorder in general is expected to inhibit
supercollimation. Here, we report a counterintuitive phenomenon of electron
supercollimation by disorder in graphene and related Dirac fermion materials.
We show that one can use onedimensional disorder potentials to control
electron wavepacket transport. This is distinct from known systems where an
electron wavepacket would be further spread by disorder and hindered in the
potential fluctuating direction. The predicted phenomenon has significant
implications in the understanding and applications of electron transport in
Dirac fermion materials.

We present a firstprinciples study of the temperature and densitydependent
intrinsic electrical resistivity of graphene. We use densityfunctional theory
and densityfunctional perturbation theory together with very accurate Wannier
interpolations to compute all electronic and vibrational properties and
electronphonon coupling matrix elements; the phononlimited resistivity is
then calculated within a Boltzmanntransport approach. An effective
tightbinding model, validated against firstprinciples results, is also used
to study the role of electronelectron interactions at the level of manybody
perturbation theory. The results found are in excellent agreement with recent
experimental data on graphene samples at high carrier densities and elucidate
the role of the different phonon modes in limiting electron mobility. Moreover,
we find that the resistivity arising from scattering with transverse acoustic
phonons is 2.5 times higher than that from longitudinal acoustic phonons. Last,
highenergy, optical, and zoneboundary phonons contribute as much as acoustic
phonons to the intrinsic electrical resistivity even at room temperature and
become dominant at higher temperatures.

Recently discovered materials called threedimensional topological insulators
constitute examples of symmetry protected topological states in the absence of
applied magnetic fields and cryogenic temperatures. A hallmark characteristic
of these nonmagnetic bulk insulators is the protected metallic electronic
states confined to the material's surfaces. Electrons in these surface states
are spin polarized with their spins governed by their direction of travel
(linear momentum), resulting in a helical spin texture in momentum space. Spin
and angleresolved photoemission spectroscopy (spinARPES) has been the only
tool capable of directly observing this central feature with simultaneous
energy, momentum, and spin sensitivity. By using an innovative photoelectron
spectrometer with a highflux laserbased light source, we discovered another
surprising property of these surface electrons which behave like Dirac
fermions. We found that the spin polarization of the resulting photoelectrons
can be fully manipulated in all three dimensions through selection of the light
polarization. These surprising effects are due to the spindependent
interaction of the helical Dirac fermions with light, which originates from the
strong spinorbit coupling in the material. Our results illustrate unusual
scenarios in which the spin polarization of photoelectrons is completely
different from the spin state of electrons in the originating initial states.
The results also provide the basis for a novel source of highly spinpolarized
electrons with tunable polarization in three dimensions.

Accurate and efficient approaches to predict the optical properties of
organic semiconducting compounds could accelerate the search for efficient
organic photovoltaic materials. Nevertheless, predicting the optical properties
of organic semiconductors has been plagued by the inaccuracy or computational
cost of conventional firstprinciples calculations. In this work, we
demonstrate that orbitaldependent densityfunctional theory based upon
Koopmans' condition [Phys. Rev. B 82, 115121 (2010)] is apt at describing donor
and acceptor levels for a wide variety of organic molecules, clusters, and
oligomers within a few tenths of an electronvolt relative to experiment, which
is comparable to the predictive performance of manybody perturbation theory
methods at a fraction of the computational cost.

We show that the degree of spin polarization of photoelectrons from the
surface states of topological insulators is 100% if fullypolarized light is
used as in typical photoemission measurements, and hence can be significantly
"higher" than that of the initial state. Further, the spin orientation of these
photoelectrons in general can also be very different from that of the initial
surface state and is controlled by the photon polarization; a rich set of
predicted phenomena have recently been confirmed by spin and angleresolved
photoemission experiments.

Ever since the novel quantum Hall effect in bilayer graphene was discovered,
and explained by a Berry phase of 2pi [K. S. Novoselov et al., "Unconventional
quantum Hall effect and Berry's phase of 2pi in bilayer graphene", Nature Phys.
2, 177 (2006)], it has been widely accepted that the lowenergy electronic
wavefunction in this system is described by a nontrivial Berry phase of 2pi,
different from the zero phase of a conventional twodimensional electron gas.
Here, we show that (i) the relevant Berry phase for bilayer graphene is not
different from that for a conventional twodimensional electron gas (as
expected, given that Berry phase is only meaningful modulo 2pi) and that (ii)
what is actually observed in the quantum Hall measurements is not the absolute
value of the Berry phase but the pseudospin winding number.

Quantum phases provide us with important information for understanding the
fundamental properties of a system. However, the observation of quantum phases,
such as Berry's phase and the sign of the matrix element of the Hamiltonian
between two nonequivalent localized orbitals in a tightbinding formalism, has
been challenged by the presence of other factors, e.g., dynamic phases and
spin/valley degeneracy, and the absence of methodology. Here, we report a new
way to directly access these quantum phases, through polarizationdependent
angleresolved photoemission spectroscopy (ARPES), using graphene as a
prototypical twodimensional material. We show that the momentum and
polarizationdependent spectral intensity provides direct measurements of (i)
the phase of the band wavefunction and (ii) the sign of matrix elements for
nonequivalent orbitals. Upon rotating light polarization by \pi/2, we found
that graphene with a Berry's phase of n\pi (n=1 for single and n=2 for
doublelayer graphene for Bloch wavefunction in the commonly used form)
exhibits the rotation of ARPES intensity by \pi/n, and that ARPES signals
reveal the signs of the matrix elements in both single and doublelayer
graphene. The method provides a new technique to directly extract fundamental
quantum electronic information on a variety of materials.

Functionals that strive to correct for such selfinteraction errors, such as
those obtained by imposing the PerdewZunger selfinteraction correction or the
generalized Koopmans' condition, become orbital dependent or orbitaldensity
dependent, and provide a very promising avenue to go beyond densityfunctional
theory, especially when studying electronic, optical and dielectric properties,
chargetransfer excitations, and molecular dissociations. Unlike conventional
density functionals, these functionals are not invariant under unitary
transformations of occupied electronic states, which leave the total charge
density intact, and this added complexity has greatly inhibited both their
development and their practical applicability. Here, we first recast the
minimization problem for nonunitary invariant energy functionals into the
language of ensemble densityfunctional theory, decoupling the variational
search into an inner loop of unitary transformations that minimize the energy
at fixed orbital subspace, and an outerloop evolution of the orbitals in the
space orthogonal to the occupied manifold. Then, we show that the potential
energy surface in the inner loop is far from convex parabolic in the early
stages of the minimization and hence minimization schemes based on these
assumptions are unstable, and present an approach to overcome such difficulty.
The overall formulation allows for a stable, robust, and efficient variational
minimization of nonunitaryinvariant functionals, essential to study complex
materials and molecules, and to investigate the bulk thermodynamic limit, where
orbitals converge typically to localized Wannier functions. In particular,
using maximally localized Wannier functions as an initial guess can greatly
reduce the computational costs needed to reach the energy minimum while not
affecting or improving the convergence efficiency.

The LandauFermi liquid picture for quasiparticles assumes that charge
carriers are dressed by manybody interactions, forming one of the fundamental
theories of solids. Whether this picture still holds for a semimetal like
graphene at the neutrality point, i.e., when the chemical potential coincides
with the Dirac point energy, is one of the longstanding puzzles in this field.
Here we present such a study in quasifreestanding graphene by using
highresolution angleresolved photoemission spectroscopy. We see the
electronelectron and electronphonon interactions go through substantial
changes when the semimetallic regime is approached, including renormalizations
due to strong electronelectron interactions with similarities to marginal
Fermi liquid behavior. These findings set a new benchmark in our understanding
of manybody physics in graphene and a variety of novel materials with Dirac
fermions.

We discuss the novel electronic properties of graphene under an external
periodic scalar or vector potential, and the analytical and numerical methods
used to investigate them. When graphene is subjected to a onedimensional
periodic scalar potential, owing to the linear dispersion and the chiral
(pseudospin) nature of the electronic states, the group velocity of its
carriers is renormalized highly anisotropically in such a manner that the
velocity is invariant along the periodic direction but is reduced the most
along the perpendicular direction. Under a periodic scalar potential, new
massless Dirac fermions are generated at the supercell Brillouin zone
boundaries. Also, we show that if the strength of the applied scalar potential
is sufficiently strong, new zeroenergy modes may be generated. With the
periodic scalar potential satisfying some special conditions, the energy
dispersion near the Dirac point becomes quasi onedimensional. On the other
hand, for graphene under a onedimensional periodic vector potential (resulting
in a periodic magnetic field perpendicular to the graphene plane), the group
velocity is reduced isotropically and monotonically with the strength of the
potential.

We show that the lowenergy electronic structure of graphene under a
onedimensional inhomogeneous magnetic field can be mapped into that of
graphene under an electric field or vice versa. As a direct application of this
transformation, we find that the carrier velocity in graphene is isotropically
reduced under magnetic fields periodic along one direction with zero average
flux. This counterintuitive renormalization has its origin in the pseudospin
nature of graphene electronic states and is robust against disorder. In
magnetic graphene superlattices with a finite average flux, the Landau level
bandwidth at high fields exhibits an unconventional behavior of decreasing with
increasing strength of the average magnetic field due to the linear energy
dispersion of graphene. As another application of our transformation relation,
we show that the transmission probabilities of an electron through a magnetic
barrier in graphene can directly be obtained from those through an
electrostatic barrier or vice versa.

EPW (ElectronPhonon coupling using Wannier functions) is a program written
in FORTRAN90 for calculating the electronphonon coupling in periodic systems
using densityfunctional perturbation theory and maximallylocalized Wannier
functions. EPW can calculate electronphonon interaction selfenergies,
electronphonon spectral functions, and total as well as moderesolved
electronphonon coupling strengths. The calculation of the electronphonon
coupling requires a very accurate sampling of electronphonon scattering
processes throughout the Brillouin zone, hence reliable calculations can be
prohibitively timeconsuming. EPW combines the KohnSham electronic eigenstates
and the vibrational eigenmodes provided by the QuantumESPRESSO package [1]
with the maximally localized Wannier functions provided by the wannier90
package [2] in order to generate electronphonon matrix elements on arbitrarily
dense Brillouin zone grids using a generalized Fourier interpolation. This
feature of EPW leads to fast and accurate calculations of the electronphonon
coupling, and enables the study of the electronphonon coupling in large and
complex systems.

Recent measurements have shown that a continuously tunable bandgap of up to
250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature
459, 820 (2009)], opening up pathway for possible graphenebased nanoelectronic
and nanophotonic devices operating at room temperature. Here, we show that the
optical response of this system is dominated by bound excitons. The main
feature of the optical absorbance spectrum is determined by a single symmetric
peak arising from excitons, a profile that is markedly different from that of
an interband transition picture. Under laboratory conditions, the binding
energy of the excitons may be tuned with the external bias going from zero to
several tens of meV's. These novel strong excitonic behaviors result from a
peculiar, effective ``onedimensional'' joint density of states and a
continuouslytunable bandgap in biased bilayer graphene. Moreover, we show that
the electronic structure (level degeneracy, optical selection rules, etc.) of
the bound excitons in a biased bilayer graphene is markedly different from that
of a twodimensional hydrogen atom because of the pseudospin physics.

Angleresolved photoemission spectroscopy (ARPES) is a powerful experimental
technique for directly probing electron dynamics in solids. The energy vs.
momentum dispersion relations and the associated spectral broadenings measured
by ARPES provide a wealth of information on quantum manybody interaction
effects. In particular, ARPES allows studies of the Coulomb interaction among
electrons (electronelectron interactions) and the interaction between
electrons and lattice vibrations (electronphonon interactions). Here, we
report ab initio simulations of the ARPES spectra of graphene including both
electronelectron and electronphonon interactions on the same footing. Our
calculations reproduce some of the key experimental observations related to
manybody effects, including the indication of a mismatch between the upper and
lower halves of the Dirac cone.