• ### Ferromagnetism and conductivity in atomically thin SrRuO3(1609.08901)

Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K.
• ### Crystal growth and characterization of the pyrochlore Tb$_2$Ti$_2$O$_7$(1705.06509)

June 20, 2017 cond-mat.mtrl-sci
Terbium titanate (Tb$_2$Ti$_2$O$_7$) is a spin-ice material with remarkable magneto-optical properties. It has a high Verdet constant and is a promising substrate crystal for the epitaxy of quantum materials with the pyrochlore structure. Large single crystals with adequate quality of Tb$_2$Ti$_2$O$_7$ or any pyrochlore are not available so far. Here we report the growth of high-quality bulk crystals using the Czochralski method to pull crystals from the melt. Prior work using the automated Czochralski method has suffered from growth instabilities like diameter fluctuation, foot formation and subsequent spiraling shortly after the seeding stage. In this study, the volumes of the crystals were strongly increased to several cubic centimeters by means of manual growth control, leading to crystal diameters up to 40 mm and crystal lengths up to 10 mm. Rocking curve measurements revealed full width at half maximum values between 28 and 40" for 222 reflections. The specific heat capacity c$_p$ was measured between room temperature and 1573 K by dynamic differential scanning calorimetry and shows the typical slow parabolic rise. In contrast, the thermal conductivity \kappa(T) shows a minimum near 700 K and increases at higher temperature T. Optical spectroscopy was performed at room temperature from the ultraviolet to the near infrared region, and additionally in the near infrared region up to 1623 K. The optical transmission properties and the crystal color are interpreted to be influenced by partial oxidation of Tb$^{3+}$ to Tb$^{4+}$.
• ### Magnetic resonance study of bulk and thin film EuTiO3(1612.05781)

Dec. 17, 2016 cond-mat.mtrl-sci
Magnetic resonance spectra of EuTiO3 in both bulk and thin film form were taken at temperatures from 3-350 K and microwave frequencies from 9.2-9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic dipole and exchange interactions between Eu2+ spins. In the film, a large contribution arises from the demagnetization field. From detailed analysis of the linewidth and its temperature dependence, the parameters of spin-spin interactions were determined: the exchange frequency is 15-15.5 GHz and the estimated critical exponent of the spin correlation length is ~ 0.5. In the bulk samples, the spectra exhibited a distinct minimum in the linewidth at the N\'eel temperature, T_N = 5.5 K, while the resonance field practically does not change even on cooling below T_N. This is indicative of a small magnetic anisotropy ~ 320 G in the antiferromagnetic phase. In the film, the magnetic resonance spectrum is split below T_N into several components due to excitation of the magnetostatic modes, corresponding to a non-uniform precession of magnetization. Moreover, the film was observed to degrade over two years. This was manifested by an increase of defects and a change in the domain structure. The saturated magnetization in the film, estimated from the magnetic resonance spectrum, was about 900 emu/cm3 or 5.5 mu_B/unit cell at T = 3.5 K.
• ### Spin-Hall Torques Generated by Rare-Earth (Lanthanide) Thin Films(1612.01927)

Dec. 6, 2016 cond-mat.mes-hall
We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $\xi_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.05 for Dy, $\approx$ 0.14 for Ho, and $\approx$ 0.014 for Lu. The variations among these elements are qualitatively consistent with results from first principles (density functional theory, DFT, in the local density approximation with a Hubbard-U correction). The DFT calculations indicate that the spin Hall conductivity is enhanced by the presence of the partially-filled $f$ orbitals in Dy and Ho, which suggests a strategy to further strengthen the contribution of the $f$ orbitals to the spin Hall effect by shifting the electron chemical potential.
• ### Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy(1610.06885)

Oct. 21, 2016 cond-mat.mes-hall
Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
• ### Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy(1609.04753)

We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.
• ### Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates(1605.05669)

Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $\gamma$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials.
• ### Acoustic Localization Phenomena in Ferroelectric Nanophononic Devices(1605.00147)

The engineering of phononic resonances in ferroelectric structures appears as a new knob in the design and realization of novel multifunctional devices. In this work we experimentally study phononic resonators based on insulating (BaTiO3, SrTiO3) and metallic (SrRuO3) oxides. We experimentally demonstrate the confinement of acoustic waves in the 100 GHz frequency range in a phonon nanocavity, the time and spatial beatings resulting from the coupling of two different hybrid nanocavities forming an acoustic molecule, and the direct measurement of Bloch-like oscillations of acoustic phonons in a system formed by 10 coupled resonators. By means of coherent phonon generation techniques we study the phonon dynamics directly in the time-domain. The metallic SrRuO3 introduces a local phonon generator and transducer that allows for the spatial, spectral and time-domain monitoring of the complex generated waves. Our results introduce ferroelectric cavity systems as a new tool for the study of complex wave localization phenomena at the nanoscale.
• ### Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$(1603.00485)

We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_{\alpha}$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_{\alpha} = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
• ### Quantifying electronic correlation strength in a complex oxide: a combined DMFT and ARPES study of LaNiO$_3$(1508.07247)

Dec. 22, 2015 cond-mat.str-el
The electronic correlation strength is a basic quantity that characterizes the physical properties of materials such as transition metal oxides. Determining correlation strengths requires both precise definitions and a careful comparison between experiment and theory. In this paper we define the correlation strength via the magnitude of the electron self-energy near the Fermi level. For the case of LaNiO$_3$, we obtain both the experimental and theoretical mass enhancements $m^\star/m$ by considering high resolution angle-resolved photoemission spectroscopy (ARPES) measurements and density functional + dynamical mean field theory (DFT + DMFT) calculations. We use valence-band photoemission data to constrain the free parameters in the theory, and demonstrate a quantitative agreement between the experiment and theory when both the realistic crystal structure and strong electronic correlations are taken into account. These results provide a benchmark for the accuracy of the DFT+DMFT theoretical approach, and can serve as a test case when considering other complex materials. By establishing the level of accuracy of the theory, this work also will enable better quantitative predictions when engineering new emergent properties in nickelate heterostructures.
• ### Formation and observation of a quasi-two-dimensional $d_{xy}$ electron liquid in epitaxially stabilized Sr$_{2-x}$La$_{x}$TiO$_{4}$ thin films(1508.07841)

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting co-operatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO$_3$/SrTiO$_3$ interface.
• ### Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4(1408.6314)

We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff=1/2 state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching TN, while the nearly fully occupied Jeff=3/2 state which remains nearby in energy exhibits negligible changes with temperature.
• ### Epitaxial Growth of VO$_{2}$ by Periodic Annealing(1310.5021)

Jan. 27, 2014 cond-mat.mtrl-sci
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.
• ### Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO$_3$(1311.1634)

We apply ultrafast X-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO$_3$ after above-bandgap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile evidenced by the broadening of the Bragg peak. These new data require substantial modification of existing models of photogenerated stresses in BiFeO$_3$: the relevant excited charge carriers must remain localized to be consistent with the data.
• ### Structural control of magnetic anisotropy in a strain driven multiferroic EuTiO3 thin film(1309.3185)

Sept. 12, 2013 cond-mat.mtrl-sci
Octahedral distortion plays a key role in engineering the physical properties of heterostructures composed of perovskite oxides. We observe a strong in-plane uniaxial magnetic anisotropy in a strain-enabled multiferroic EuTiO3 thin film epitaxially grown on a (110)o DyScO3 substrate. First principles calculations show that the magnetic anisotropy is closely correlated with the uniaxial TiO6 octahedral tilting and the ferroelectric polarization of the film, indicating potential strong magnetoelectric coupling in the strain-engineered multiferroic system.
• ### LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces(1303.5352)

Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.
• ### Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition(1207.4490)

July 18, 2012 cond-mat.str-el
We present angle-resolved photoemission spectroscopy of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition. In the ferromagnetic phase, we observe Fermi surface pockets at the Brillouin zone boundary, consistent with density functional theory, which predicts a half metal. Upon warming into the paramagnetic state, our results reveal a strong momentum-dependent evolution of the electronic structure, where the metallic states at the zone boundary are replaced by pseudogapped states at the Brillouin zone center due to the absence of magnetic long-range order of the Eu 4f moments.
• ### Reversible Control of Magnetic Interactions by Electric Field in a Single Phase Material(1206.5181)

June 22, 2012 cond-mat.mtrl-sci
Intrinsic magnetoelectric coupling describes the interaction between magnetic and electric polarization through an inherent microscopic mechanism in a single phase material. This phenomenon has the potential to control the magnetic state of a material with an electric field, an enticing prospect for device engineering. We demonstrate 'giant' magnetoelectric cross-field control in a single phase rare earth titanate film. In bulk form, EuTiO3 is antiferromagnetic. However, both anti and ferromagnetic interactions coexist between different nearest neighbor europium ions. In thin epitaxial films, strain can be used to alter the relative strength of the magnetic exchange constants. Here, we not only show that moderate biaxial compression precipitates local magnetic competition, but also demonstrate that the application of an electric field at this strain state, switches the magnetic ground state. Using first principles density functional theory, we resolve the underlying microscopic mechanism resulting in the EuTiO3 G-type magnetic structure and illustrate how it is responsible for the 'giant' cross-field magnetoelectric effect.
• ### Evolution of magnetic phases and orbital occupation in (SrMnO3)n/(LaMnO3)2n superlattices(0909.4335)

Sept. 23, 2009 cond-mat.str-el
The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and $e_{g}(x^{2}-y^{2})$ orbital occupation, in agreement with the average strain. Far from interfaces, inside LaMnO$_3$, electron localization and local strain favor antiferromagnetism (AFM) and $e_{g}(3z^{2}-r^{2})$ orbital occupation. For $n=1$ the high density of interfacial planes ultimately leads to dominant FM order forcing the residual AFM phase to be in-plane too, while for $n \geq 5$ the FM layers are separated by AFM regions having out-of-plane spin orientation.
• ### Broadband Dielectric Spectroscopy of Ruddlesden-Popper Sr$_{n+1}$Ti$_{n}$O$_{3n+1}$ ($n$ = 1, 2, 3) Thin Films(0902.1572)

Feb. 10, 2009 cond-mat.mtrl-sci
We explore the frequency-dependent relative permittivity of Ruddlesden-Popper series Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) thin films as a function of temperature and dc electric field. Interdigitated capacitors and coplanar waveguides were used to extract the frequency response from 500 Hz to 40 GHz. At room temperature, the in-plane relative permittivities obtained for Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) were 42+/-3, 54+/-3, and 77+/-2, respectively, and were independent of frequency. At low temperatures, permittivity increases and electric field tunability develops in Sr(4)Ti(3)O(10).
• ### Spin-Charge-Lattice Coupling through Resonant Multi-Magnon Excitations in Multiferroic BiFeO3(0803.3473)

Jan. 7, 2009 cond-mat.other
Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These are shown to be collective interactions between on-site Fe d-d electronic resonance, phonons and multimagnons
• ### Multiferroic Domain Dynamics in Strained Strontium Titanate(cond-mat/0609585)

Sept. 22, 2006 cond-mat.mtrl-sci
Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension by 0.94%. The results agree well with theoretical first principles and phase-field predictions. Direct imaging of domains arising from the ferroelectric phase transition, and its switching under electric fields is demonstrated using piezoelectric force microscopy. Nonlinear optics combined with phase-field modeling is used to show that the dominant multiferroic domain switching mechanism is through coupled 90 degree ferroelectric-ferroelastic domain wall motion. More broadly, these studies of coexisting ferroelectric (polar) and antiferrodistortive rotation (axial) phenomena could have relevance to multiferroics with coexisting ferroelectric (polar) and magnetic (axial) phenomena.
• ### Structural and transport properties of epitaxial NaxCoO2 thin films(cond-mat/0505256)

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
• ### Properties of MgB2 thin films with carbon doping(cond-mat/0407146)

We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic field applications.
• ### Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition(cond-mat/0304164)

We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.