• ### PrivyNet: A Flexible Framework for Privacy-Preserving Deep Neural Network Training(1709.06161)

Jan. 12, 2018 cs.LG
Massive data exist among user local platforms that usually cannot support deep neural network (DNN) training due to computation and storage resource constraints. Cloud-based training schemes provide beneficial services but suffer from potential privacy risks due to excessive user data collection. To enable cloud-based DNN training while protecting the data privacy simultaneously, we propose to leverage the intermediate representations of the data, which is achieved by splitting the DNNs and deploying them separately onto local platforms and the cloud. The local neural network (NN) is used to generate the feature representations. To avoid local training and protect data privacy, the local NN is derived from pre-trained NNs. The cloud NN is then trained based on the extracted intermediate representations for the target learning task. We validate the idea of DNN splitting by characterizing the dependency of privacy loss and classification accuracy on the local NN topology for a convolutional NN (CNN) based image classification task. Based on the characterization, we further propose PrivyNet to determine the local NN topology, which optimizes the accuracy of the target learning task under the constraints on privacy loss, local computation, and storage. The efficiency and effectiveness of PrivyNet are demonstrated with the CIFAR-10 dataset.
• ### E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System(1502.00621)

Feb. 1, 2015 cs.OH
Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, industry has proposed character projection (CP) technique, where some complex shapes (characters) can be printed in one shot. Recently the traditional EBL system is extended into multi-column cell (MCC) system to further improve the throughput. In MCC system, several independent CPs are used to further speed-up the writing process. Because of the area constraint of stencil, MCC system needs to be packed/planned carefully to take advantage of the characters. In this paper, we prove that the overlapping aware stencil planning (OSP) problem is NP-hard. To solve OSP problem in MCC system, we present a tool, E-BLOW, with several novel speedup techniques, such as successive relaxation, dynamic programming, and KD-Tree based clustering. Experimental results show that, compared with previous works, E-BLOW demonstrates better performance for both conventional EBL system and MCC system.
• ### Triple Patterning Lithography (TPL) Layout Decomposition using End-Cutting (JM3 Special Session)(1408.0407)

Aug. 2, 2014 cs.OH
Triple patterning lithography (TPL) is one of the most promising techniques in the 14nm logic node and beyond. Conventional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently, as an alternative process, triple patterning lithography with end cutting (LELE-EC) was proposed to overcome the limitations of LELELE manufacturing. In LELE-EC process the first two masks are LELE type double patterning, while the third mask is used to generate the end-cuts. Although the layout decomposition problem for LELELE has been well-studied in the literature, only few attempts have been made to address the LELE-EC layout decomposition problem. In this paper we propose the comprehensive study for LELE-EC layout decomposition. Conflict graph and end-cut graph are constructed to extract all the geometrical relationships of both input layout and end-cut candidates. Based on these graphs, integer linear programming (ILP) is formulated to minimize the conflict number and the stitch number. The experimental results demonstrate the effectiveness of the proposed algorithms.
• ### Layout Decomposition for Quadruple Patterning Lithography and Beyond(1404.0321)

March 31, 2014 cs.DS
For next-generation technology nodes, multiple patterning lithography (MPL) has emerged as a key solution, e.g., triple patterning lithography (TPL) for 14/11nm, and quadruple patterning lithography (QPL) for sub-10nm. In this paper, we propose a generic and robust layout decomposition framework for QPL, which can be further extended to handle any general K-patterning lithography (K$>$4). Our framework is based on the semidefinite programming (SDP) formulation with novel coloring encoding. Meanwhile, we propose fast yet effective coloring assignment and achieve significant speedup. To our best knowledge, this is the first work on the general multiple patterning lithography layout decomposition.
• ### Lithography Hotspot Detection and Mitigation in Nanometer VLSI(1402.3150)

Feb. 13, 2014 cs.AR
With continued feature size scaling, even state of the art semiconductor manufacturing processes will often run into layouts with poor printability and yield. Identifying lithography hotspots is important at both physical verification and early physical design stages. While detailed lithography simulations can be very accurate, they may be too computationally expensive for full-chip scale and physical design inner loops. Meanwhile, pattern matching and machine learning based hotspot detection methods can provide acceptable quality and yet fast turn-around-time for full-chip scale physical verification and design. In this paper, we discuss some key issues and recent results on lithography hotspot detection and mitigation in nanometer VLSI.
• ### A High-Performance Triple Patterning Layout Decomposer with Balanced Density(1402.2890)

Feb. 12, 2014 cs.AR
Triple patterning lithography (TPL) has received more and more attentions from industry as one of the leading candidate for 14nm/11nm nodes. In this paper, we propose a high performance layout decomposer for TPL. Density balancing is seamlessly integrated into all key steps in our TPL layout decomposition, including density-balanced semi-definite programming (SDP), density-based mapping, and density-balanced graph simplification. Our new TPL decomposer can obtain high performance even compared to previous state-of-the-art layout decomposers which are not balanced-density aware, e.g., by Yu et al. (ICCAD'11), Fang et al. (DAC'12), and Kuang et al. (DAC'13). Furthermore, the balanced-density version of our decomposer can provide more balanced density which leads to less edge placement error (EPE), while the conflict and stitch numbers are still very comparable to our non-balanced-density baseline.
• ### GLOW: A global router for low-power thermal-reliable interconnect synthesis using photonic wavelength multiplexing(1402.2899)

Feb. 12, 2014 cs.AR
In this paper, we examine the integration potential and explore the design space of low power thermal reliable on-chip interconnect synthesis featuring nanophotonics Wavelength Division Multiplexing (WDM). With the recent advancements, it is foreseen that nanophotonics holds the promise to be employed for future on-chip data signalling due to its unique power efficiency, signal delay and huge multiplexing potential. However, there are major challenges to address before feasible on-chip integration could be reached. In this paper, we present GLOW, a hybrid global router to provide low power opto-electronic interconnect synthesis under the considerations of thermal reliability and various physical design constraints such as optical power, delay and signal quality. GLOW is evaluated with testing cases derived from ISPD07-08 global routing benchmarks. Compared with a greedy approach, GLOW demonstrates around 23%-50% of total optical power reduction, revealing great potential of on-chip WDM interconnect synthesis.
• ### EPIC: Efficient prediction of IC manufacturing hotspots with a unified meta-classification formulation(1402.2904)

Feb. 12, 2014 cs.AR
In this paper we present EPIC, an efficient and effective predictor for IC manufacturing hotspots in deep sub-wavelength lithography. EPIC proposes a unified framework to combine different hotspot detection methods together, such as machine learning and pattern matching, using mathematical programming/optimization. EPIC algorithm has been tested on a number of industry benchmarks under advanced manufacturing conditions. It demonstrates so far the best capability in selectively combining the desirable features of various hotspot detection methods (3.5-8.2% accuracy improvement) as well as significant suppression of the detection noise (e.g., 80% false-alarm reduction). These characteristics make EPIC very suitable for conducting high performance physical verification and guiding efficient manufacturability friendly physical design.
• ### TRIAD: a triple patterning lithography aware detailed router(1402.2906)

Feb. 12, 2014 cs.AR
TPL-friendly detailed routers require a systematic approach to detect TPL conflicts. However, the complexity of conflict graph (CG) impedes directly detecting TPL conflicts in CG. This work proposes a token graph-embedded conflict graph (TECG) to facilitate the TPL conflict detection while maintaining high coloring-flexibility. We then develop a TPL aware detailed router (TRIAD) by applying TECG to a gridless router with the TPL stitch generation. Compared to a greedy coloring approach, experimental results indicate that TRIAD generates no conflicts and few stitches with shorter wirelength at the cost of 2.41x of runtime.
• ### Methodology for standard cell compliance and detailed placement for triple patterning lithography(1402.2635)

Feb. 11, 2014 cs.AR
As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition.
• ### L-Shape based Layout Fracturing for E-Beam Lithography(1402.2420)

Feb. 11, 2014 cs.AR
Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing. Meanwhile, during layout fracturing, one must minimize very small/narrow features, also called slivers, due to manufacturability concern. This paper addresses this new research problem of how to perform L-shaped fracturing with sliver minimization. We propose two novel algorithms. The first one, rectangular merging (RM), starts from a set of rectangular fractures and merges them optimally to form L-shape fracturing. The second algorithm, direct L-shape fracturing (DLF), directly and effectively fractures the input layouts into L-shapes with sliver minimization. The experimental results show that our algorithms are very effective.
• ### Triple Patterning Lithography (TPL) Layout Decomposition using End-Cutting(1402.2425)

Feb. 11, 2014 cs.AR
Triple patterning lithography (TPL) is one of the most promising techniques in the 14nm logic node and beyond. However, traditional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently LELEEC process was proposed to overcome the limitations, where the third mask is used to generate the end-cuts. In this paper we propose the first study for LELEEC layout decomposition. Conflict graphs and end-cut graphs are constructed to extract all the geometrical relationships of input layout and end-cut candidates. Based on these graphs, integer linear programming (ILP) is formulated to minimize the conflict number and the stitch number.
• ### E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System(1402.2435)

Feb. 11, 2014 cs.AR
Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, recently the traditional EBL system is extended into MCC system. %to further improve the throughput. In this paper, we present E-BLOW, a tool to solve the overlapping aware stencil planning (OSP) problems in MCC system. E-BLOW is integrated with several novel speedup techniques, i.e., successive relaxation, dynamic programming and KD-Tree based clustering, to achieve a good performance in terms of runtime and solution quality. Experimental results show that, compared with previous works, E-BLOW demonstrates better performance for both conventional EBL system and MCC system.
• ### Self-Aligned Double Patterning Friendly Configuration for Standard Cell Library Considering Placement(1402.2442)

Feb. 11, 2014 cs.AR
Self-aligned double patterning (SADP) has become a promising technique to push pattern resolution limit to sub-22nm technology node. Although SADP provides good overlay controllability, it encounters many challenges in physical design stages to obtain conflict-free layout decomposition. In this paper, we study the impact on placement by different standard cell layout decomposition strategies. We propose a SADP friendly standard cell configuration which provides pre-coloring results for standard cells. These configurations are brought into the placement stage to help ensure layout decomposability and save the extra effort for solving conflicts in later stages.
• ### Layout decomposition for triple patterning lithography(1402.2459)

Feb. 11, 2014 cs.AR
As minimum feature size and pitch spacing further decrease, triple patterning lithography (TPL) is a possible 193nm extension along the paradigm of double patterning lithography (DPL). However, there is very little study on TPL layout decomposition. In this paper, we show that TPL layout decomposition is a more difficult problem than that for DPL. We then propose a general integer linear programming formulation for TPL layout decomposition which can simultaneously minimize conflict and stitch numbers. Since ILP has very poor scalability, we propose three acceleration techniques without sacrificing solution quality: independent component computation, layout graph simplification, and bridge computation. For very dense layouts, even with these speedup techniques, ILP formulation may still be too slow. Therefore, we propose a novel vector programming formulation for TPL decomposition, and solve it through effective semidefinite programming (SDP) approximation. Experimental results show that the ILP with acceleration techniques can reduce 82% runtime compared to the baseline ILP. Using SDP based algorithm, the runtime can be further reduced by 42% with some tradeoff in the stitch number (reduced by 7%) and the conflict (9% more). However, for very dense layouts, SDP based algorithm can achieve 140x speed-up even compared with accelerated ILP.