
The Anderson metalinsulator transition (MIT) is central to our understanding
of the quantum mechanical nature of disordered materials. Despite extensive
efforts by theory and experiment, there is still no agreement on the value of
the critical exponent $\nu$ describing the universality of the transition 
the socalled "exponent puzzle". In this work, going beyond the standard
Anderson model, we employ ab initio methods to study the MIT in a realistic
model of a doped semiconductor. We use linearscaling DFT to simulate
prototypes of sulfurdoped silicon (Si:S). From these we build larger
tightbinding models close to the critical concentration of the MIT. When the
dopant concentration is increased, an impurity band forms and eventually
delocalizes. We characterize the MIT via multifractal finitesize scaling,
obtaining the phase diagram and estimates of $\nu$. Our results suggest an
explanation of the longstanding exponent puzzle, which we link to the
hybridization of conduction and impurity bands.

We study the collective dephasing process of a system of noninteracting
atomic qubits, immersed in a spatially uniform magnetic field of fluctuating
intensity. The correlation properties of bipartite states are analysed based on
a geometric representation of the state space. Particular emphasis is put on
the dephasingassisted generation of states with a high correlation rank, which
can be related to discordtype correlations and allow for direct applications
in quantum information theory. Finally we study the conditions that ensure the
robustness of initial entanglement and discuss the phenomenon of timeinvariant
entanglement.

We derive an analytic solution for the ensembleaveraged collective dephasing
dynamics of $N$ noninteracting atoms in a fluctuating homogeneous external
field. The obtained Kraus map is used to specify families of states whose
entanglement properties are preserved at all times under arbitrary field
orientations, even for states undergoing incoherent evolution. Our results
apply to arbitrary spectral distributions of the field fluctuations.