
Majorana modes are zeroenergy excitations of a topological superconductor
that exhibit nonAbelian statistics. Following proposals for their detection in
a semiconductor nanowire coupled to an swave superconductor, several tunneling
experiments reported characteristic Majorana signatures. Reducing disorder has
been a prime challenge for these experiments because disorder can mimic the
zeroenergy signatures of Majoranas, and renders the topological properties
inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire
devices exhibiting clear ballistic transport properties. Application of a
magnetic field and spatial control of carrier density using local gates
generates a zero bias peak that is rigid over a large region in the parameter
space of chemical potential, Zeeman energy, and tunnel barrier potential. The
reduction of disorder allows us to resolve separate regions in the parameter
space with and without a zero bias peak, indicating topologically distinct
phases. These observations are consistent with the Majorana theory in a
ballistic system, and exclude for the first time the known alternative
explanations that invoke disorder or a nonuniform chemical potential.

Majorana zeromodes hold great promise for topological quantum computing.
Tunnelling spectroscopy in electrical transport is the primary tool to identify
the presence of Majorana zeromodes, for instance as a zerobias peak (ZBP) in
differentialconductance. The Majorana ZBPheight is predicted to be quantized
at the universal conductance value of 2e2/h at zero temperature. Interestingly,
this quantization is a direct consequence of the famous Majorana symmetry,
'particle equals antiparticle'. The Majorana symmetry protects the quantization
against disorder, interactions, and variations in the tunnel coupling. Previous
experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent
observation of a peakheight close to 2e2/h. Here, we report a quantized
conductance plateau at 2e2/h in the zerobias conductance measured in InSb
semiconductor nanowires covered with an Al superconducting shell. Our
ZBPheight remains constant despite changing parameters such as the magnetic
field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish
this quantized Majorana peak from possible nonMajorana origins, by
investigating its robustness on electric and magnetic fields as well as its
temperature dependence. The observation of a quantized conductance plateau
strongly supports the existence of nonAbelian Majorana zeromodes in the
system, consequently paving the way for future braiding experiments.

Semiconductor nanowires have opened new research avenues in quantum transport
owing to their confined geometry and electrostatic tunability. They have
offered an exceptional testbed for superconductivity, leading to the
realization of hybrid systems combining the macroscopic quantum properties of
superconductors with the possibility to control charges down to a single
electron. These advances brought semiconductor nanowires to the forefront of
efforts to realize topological superconductivity and Majorana modes. A prime
challenge to benefit from the topological properties of Majoranas is to reduce
the disorder in hybrid nanowire devices. Here, we show ballistic
superconductivity in InSb semiconductor nanowires. Our structural and chemical
analyses demonstrate a highquality interface between the nanowire and a NbTiN
superconductor which enables ballistic transport. This is manifested by a
quantized conductance for normal carriers, a strongly enhanced conductance for
Andreevreflecting carriers, and an induced hard gap with a significantly
reduced density of states. These results pave the way for disorderfree
Majorana devices.

Semiconductor nanowires provide an ideal platform for various lowdimensional
quantum devices. In particular, topological phases of matter hosting
nonAbelian quasiparticles can emerge when a semiconductor nanowire with
strong spinorbit coupling is brought in contact with a superconductor. To
fully exploit the potential of nonAbelian anyons for topological quantum
computing, they need to be exchanged in a wellcontrolled braiding operation.
Essential hardware for braiding is a network of singlecrystalline nanowires
coupled to superconducting islands. Here, we demonstrate a technique for
generic bottomup synthesis of complex quantum devices with a special focus on
nanowire networks having a predefined number of superconducting islands.
Structural analysis confirms the high crystalline quality of the nanowire
junctions, as well as an epitaxial superconductorsemiconductor interface.
Quantum transport measurements of nanowire "hashtags" reveal AharonovBohm and
weakantilocalization effects, indicating a phase coherent system with strong
spinorbit coupling. In addition, a proximityinduced hard superconducting gap
is demonstrated in these hybrid superconductorsemiconductor nanowires,
highlighting the successful materials development necessary for a first
braiding experiment. Our approach opens new avenues for the realization of
epitaxial 3dimensional quantum device architectures.

Topological superconductivity is a state of matter that can host Majorana
modes, the building blocks of a topological quantum computer. Many experimental
platforms predicted to show such a topological state rely on proximityinduced
superconductivity. However, accessing the topological properties requires an
induced hard superconducting gap, which is challenging to achieve for most
material systems. We have systematically studied how the interface between an
InSb semiconductor nanowire and a NbTiN superconductor affects the induced
superconducting properties. Step by step, we improve the homogeneity of the
interface while ensuring a barrierfree electrical contact to the
superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field
stability of NbTiN allows the InSb nanowire to maintain a hard gap and a
supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement
for topological superconductivity in onedimensional systems. Our study
provides a guideline to induce superconductivity in various experimental
platforms such as semiconductor nanowires, two dimensional electron gases and
topological insulators, and holds relevance for topological superconductivity
and quantum computation.

Quantum simulation is a way to study unexplored Hamiltonians by mapping them
onto the assemblies of wellunderstood quantum systems such as ultracold atoms
in optical lattices, trapped ions or superconducting circuits. Semiconductor
nanostructures which form the backbone of classical computing hold largely
untapped potential for quantum simulation. In particular, chains of quantum
dots in semiconductor nanowires can be used to emulate onedimensional
Hamiltonians such as the toy model of a topological pwave superconductor. Here
we realize a building block of this model, a double quantum dot with
superconducting contacts, in an indium antimonide nanowire. In each dot,
tunnelcoupling to a superconductor induces Andreev bound states. We
demonstrate that these states hybridize to form the doubledot Andreev
molecular states. We establish the parity and the spin structure of Andreev
molecular levels by monitoring their evolution in electrostatic potential and
magnetic field. Understanding Andreev molecules is a key step towards building
longer chains which are predicted to generate Majorana bound states at the end
sites. Two superconducting quantum dots are already sufficient to test the
fusion rules of Majorana bound states, a milestone towards faulttolerant
topological quantum computing.

Topological superconductors can host Majorana quasiparticles which supersede
the fermion/boson dichotomy and offer a pathway to fault tolerant quantum
computation. In onedimensional systems zeroenergy Majorana states are bound
to the ends of the topologically superconducting regions. An experimental
signature of a Majorana bound state is a conductance peak at zero sourcedrain
voltage bias in a tunneling experiment. Here, we identify the bulk topological
phase in a semiconductor nanowire coupled to a conventional superconductor. We
map out its phase diagram through the dependence of zerobias peak on the
chemical potential and magnetic field. Our findings are consistent with
calculations for a finitelength topological nanowire. Knowledge of the phase
diagram makes it possible to predictably tune nanowire segments in and out of
the topological phase, thus controlling the positions and couplings of multiple
Majorana bound states. This ability is a prerequisite for Majorana braiding, an
experiment in which Majorana quantum states are exchanged in order to both
demonstrate their nonabelian character and realize topological quantum bits.

We define single quantum dots of lengths varying from 60 nm up to nearly half
a micron in GeSi coreshell nanowires. The charging energies scale inversely
with the quantum dot length between 18 and 4 meV. Subsequently, we split up a
long dot into a double quantum dot with a separate control over the tunnel
couplings and the electrochemical potential of each dot. Both single and double
quantum dot configurations prove to be very stable and show excellent control
over the electrostatic environment of the dots, making this system a highly
versatile platform for spinbased quantum computing.

We present measurements on gatedefined double quantum dots in GeSi
coreshell nanowires, which we tune to a regime with visible shell filling in
both dots. We observe a Pauli spin blockade and can assign the measured leakage
current at low magnetic fields to spinflip cotunneling, for which we measure a
strong anisotropy related to an anisotropic gfactor. At higher magnetic fields
we see signatures for leakage current caused by spinorbit coupling between
(1,1)singlet and (2,0)triplet states. Taking into account these anisotropic
spinflip mechanisms, we can choose the magnetic field direction with the
longest spin lifetime for improved spinorbit qubits.

We demonstrate that optical transmission matrices (TM) of disordered complex
media provide a powerful tool to extract the photonic interaction strength,
independent of surface effects. We measure TM of strongly scattering GaP
nanowires and plot the singular value density of the measured matrices and a
random matrix model. By varying the free parameters of the model, the transport
mean free path and effective refractive index, we retrieve the photonic
interaction strength. From numerical simulations we conclude that TM statistics
is hardly sensitive to surface effects, in contrast to enhanced backscattering
or total transmission based methods.

Controlling the dispersion and directionality of the emission of nanosources
is one of the major goals of nanophotonics research. This control will allow
the development of highly efficient nanosources even at the single photon
level. One of the ways to achieve this goal is to couple the emission to Bloch
modes of periodic structures. Here, we present the first measurements of the
directional emission from nanowire photonic crystals by using Fourier
microscopy. With this technique we efficiently collect and resolve the
directional emission of nanowires within the numerical aperture of a microscope
objective. The light emission from a heterostructure grown in each nanowire is
governed by the photonic (Bloch) modes of the photonic crystal. We also
demonstrate that the directionality of the emission can be easily controlled by
infiltrating the photonic crystal with a high refractive index liquid. This
work opens new possibilities for the control of the emission of sources in
nanowires.

A generic process has been developed to grow nearly defect free arrays of
(heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been
used to pattern gold particle arrays on full 2 inch substrates. After liftoff
organic residues remain on the surface, which induce the growth of additional
undesired nanowires. We show that cleaning of the samples before growth with
piranha solution in combination with a thermal anneal at 550 C for InP and 700
C for GaP results in uniform nanowire arrays with 1% variation in nanowire
length, and without undesired extra nanowires. Our chemical cleaning procedure
is applicable to other lithographic techniques such as ebeam lithography, and
therefore represents a generic process.