• We demonstrate that the nontrivial magnetic texture of antiferromagnetic skyrmions (AFM-Sks) promotes a non-vanishing topological spin Hall effect (TSHE) on the flowing electrons. This results in a substantial enhancement of the non-adiabatic torque and hence improves the skyrmion mobility. This non-adiabatic torque increases when decreasing the skyrmion size, and therefore scaling down results in a much higher torque efficiency. In clean AFM-Sks, we find a significant boost of the TSHE close to van Hove singularity. Interestingly, this effect is enhanced away from the band gap in the presence of non-magnetic interstitial defects. Furthermore, unlike their ferromagnetic counterpart, TSHE in AFM-Sks increases with increase in disorder strength thus opening promising avenues for materials engineering of this effect.
  • Propagation character of spin wave was investigated for chiral magnets FeGe and Co-Zn-Mn alloys, which can host magnetic skyrmions near room temperature. On the basis of the frequency shift between counter-propagating spin waves, the magnitude and sign of Dzyaloshinskii-Moriya (DM) interaction were directly evaluated. The obtained magnetic parameters quantitatively account for the size and helicity of skyrmions as well as their materials variation, proving that the DM interaction plays a decisive role in the skyrmion formation in this class of room-temperature chiral magnets. The propagating spin-wave spectroscopy can thus be an efficient tool to study DM interaction in bulk single-phase compounds. Our results also demonstrate a function of spin-wave diode based on chiral crystal structures at room temperature.
  • Spin current, i.e. the flow of spin angular momentum or magnetic moment, has recently attracted much attention as the promising alternative for charge current with better energy efficiency. Genuine spin current is generally carried by the spin wave (propagating spin precession) in insulating ferromagnets, and should hold the chiral symmetry when it propagates along the spin direction. Here, we experimentally demonstrate that such a spin wave spin current (SWSC) shows nonreciprocal propagation characters in a chiral-lattice ferromagnet. This phenomenon originates from the interference of chirality between the SWSC and crystal-lattice, which is mediated by the relativistic spin-orbit interaction. The present finding enables the design of perfect spin current diode, and highlights the importance of the chiral aspect in SWSC.
  • Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.
  • We calculate the magnetization torque due to the spin polarization of the itinerant electrons by deriving the kinetic spin Bloch equations based on the $s$-$d$ model. We find that the first-order gradient of the magnetization inhomogeneity gives rise to the current-induced torques, which are consistent to the previous works. At the second-order gradient, we find an effective magnetic field perpendicular to the spin stiffness filed. This field is proportional to the nonadiabatic parameter $\beta$. We show that this vertical spin stiffness term can significantly modify the domain-wall structure in ferromagnetic semiconductors and hence should be included in the Landau-Lifshitz-Gilbert equation in studying the magnetization dynamics.
  • The Gilbert damping in ferromagnetic semiconductors is theoretically investigated based on the $s$-$d$ model. In contrast to the situation in metals, all the spin-conserving scattering in ferromagnetic semiconductors supplies an additional spin relaxation channel due to the momentum dependent effective magnetic field of the spin-orbit coupling, thereby modifies the Gilbert damping. In the presence of a pure spin current, we predict a new contribution due to the interplay of the anisotropic spin-orbit coupling and a pure spin current.
  • Interplay between magnetization dynamics and electric current in a conducting ferromagnet is theoretically studied based on a microscopic model calculation. First, the effects of the current on magnetization dynamics (spin torques) are studied with special attention to the "dissipative" torques arising from spin-relaxation processes of conduction electrons. Next, an analysis is given of the "spin motive force", namely, a spin-dependent 'voltage' generation due to magnetization dynamics, which is the reaction to spin torques. Finally, an attempt is presented of a unified description of these effects.
  • Spin torques, that is, effects of conduction electrons on magnetization dynamics, are calculated microscopically in the first order in spatial gradient and time derivative of magnetization. Special attention is paid to the so-called \beta-term and the Gilbert damping, \alpha, in the presence of electrons' spin-relaxation processes, which are modeled by quenched magnetic impurities. Two types of forces that the electric/spin current exerts on magnetization are identified based on a general formula relating the force to the torque.