• Nanodiamond integration with photonic devices(1610.03183)

We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show that various regimes of light and matter interaction can be achieved by engineering color center systems through hybrid approaches. We present our recent results on the growth of color center-rich nanodiamond on prefabricated 3C-SiC microdisk resonators. These hybrid devices achieve up to five-fold enhancement of diamond color center light emission and can be employed for integrated quantum photonics.
• Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers(1509.01617)

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.
• Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes(1410.3800)

We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 ({\lambda}/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These structures based on ensembles of optically active impurities in 3C-SiC resonators could play an important role in diverse applications of nonlinear and quantum photonics, including low power optical switching and quantum memories.
• Photonic Crystal Cavities in Cubic (3C) Polytype Silicon Carbide Films(1310.2222)

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1,250 - 1,600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.
• Highly Confined Hybrid Spoof Surface Plasmons in Ultra-thin Metal/Dielectric Heterostructures(1008.4809)

Highly confined "spoof" surface plasmon-like (SSP) modes are theoretically predicted to exist in a perforated metal film coated with a thin dielectric layer. Strong modes confinement results from the additional waveguiding by the layer. Spectral characteristics, field distribution, and lifetime of these SSPs are tunable by the holes' size and shape. SSPs exist both above and below the light line, offering two classes of applications: "perfect" far-field absorption and to efficient emission into guided modes. It is experimentally shown that these plasmon-like modes can turn thin, weakly-absorbing semiconductor films into perfect absorbers.