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We present DARKNESS (the DARK-speckle Near-infrared Energy-resolving
Superconducting Spectrophotometer), the first of several planned integral field
spectrographs to use optical/near-infrared Microwave Kinetic Inductance
Detectors (MKIDs) for high-contrast imaging. The photon counting and
simultaneous low-resolution spectroscopy provided by MKIDs will enable
real-time speckle control techniques and post-processing speckle suppression at
framerates capable of resolving the atmospheric speckles that currently limit
high-contrast imaging from the ground. DARKNESS is now operational behind the
PALM-3000 extreme adaptive optics system and the Stellar Double Coronagraph at
Palomar Observatory. Here we describe the motivation, design, and
characterization of the instrument, early on-sky results, and future prospects.
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For X-ray imaging spectroscopy, high spatial resolution over a large field of
view is often as important as high energy resolution, but current X-ray
detectors do not provide both in the same device. Thermal Kinetic Inductance
Detectors (TKIDs) are being developed as they offer a feasible way to combine
the energy resolution of transition edge sensors with pixel counts approaching
CCDs and thus promise significant improvements for many X-ray spectroscopy
applications. TKIDs are a variation of Microwave Kinetic Inductance Detectors
(MKIDs) and share their multiplexibility: working MKID arrays with 2024 pixels
have recently been demonstrated and much bigger arrays are under development.
In this work, we present our first working TKID prototypes which are able to
achieve an energy resolution of 75 eV at 5.9 keV, even though their general
design still has to be optimized. We further describe TKID fabrication,
characterization, multiplexing and working principle and demonstrate the
necessity of a data fitting algorithm in order to extract photon energies. With
further design optimizations we expect to be able to improve our TKID energy
resolution to less than 10 eV at 5.9 keV.
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We present a comparative study of the growth of the technologically highly
relevant gate dielectric and encapsulation material aluminum oxide in inorganic
and also organic heterostructures. Atomic force microscopy studies indicate
strong similarities in the surface morphology of aluminum oxide films grown on
these chemically different substrates. In addition, from X-ray reflectivity
measurements we extract the roughness exponent \beta of aluminum oxide growth
on both substrates. By renormalising the aluminum oxide roughness by the
roughness of the underlying organic film we find good agreement with \beta as
obtained from the aluminum oxide on silicon oxide (\beta = 0.38 \pm 0.02),
suggesting a remarkable similarity of the aluminum oxide growth on the two
substrates under the conditions employed.