We present DARKNESS (the DARK-speckle Near-infrared Energy-resolving Superconducting Spectrophotometer), the first of several planned integral field spectrographs to use optical/near-infrared Microwave Kinetic Inductance Detectors (MKIDs) for high-contrast imaging. The photon counting and simultaneous low-resolution spectroscopy provided by MKIDs will enable real-time speckle control techniques and post-processing speckle suppression at framerates capable of resolving the atmospheric speckles that currently limit high-contrast imaging from the ground. DARKNESS is now operational behind the PALM-3000 extreme adaptive optics system and the Stellar Double Coronagraph at Palomar Observatory. Here we describe the motivation, design, and characterization of the instrument, early on-sky results, and future prospects.

For X-ray imaging spectroscopy, high spatial resolution over a large field of view is often as important as high energy resolution, but current X-ray detectors do not provide both in the same device. Thermal Kinetic Inductance Detectors (TKIDs) are being developed as they offer a feasible way to combine the energy resolution of transition edge sensors with pixel counts approaching CCDs and thus promise significant improvements for many X-ray spectroscopy applications. TKIDs are a variation of Microwave Kinetic Inductance Detectors (MKIDs) and share their multiplexibility: working MKID arrays with 2024 pixels have recently been demonstrated and much bigger arrays are under development. In this work, we present our first working TKID prototypes which are able to achieve an energy resolution of 75 eV at 5.9 keV, even though their general design still has to be optimized. We further describe TKID fabrication, characterization, multiplexing and working principle and demonstrate the necessity of a data fitting algorithm in order to extract photon energies. With further design optimizations we expect to be able to improve our TKID energy resolution to less than 10 eV at 5.9 keV.

We present a comparative study of the growth of the technologically highly relevant gate dielectric and encapsulation material aluminum oxide in inorganic and also organic heterostructures. Atomic force microscopy studies indicate strong similarities in the surface morphology of aluminum oxide films grown on these chemically different substrates. In addition, from X-ray reflectivity measurements we extract the roughness exponent \beta of aluminum oxide growth on both substrates. By renormalising the aluminum oxide roughness by the roughness of the underlying organic film we find good agreement with \beta as obtained from the aluminum oxide on silicon oxide (\beta = 0.38 \pm 0.02), suggesting a remarkable similarity of the aluminum oxide growth on the two substrates under the conditions employed.