
The first known magnetic mineral, magnetite (Fe$_3$O$_4$), has unusual
properties which have fascinated mankind for centuries; it undergoes the Verwey
transition at $T_{\rm V}$ $\sim$120 K with an abrupt change in structure and
electrical conductivity. The mechanism of the Verwey transition however remains
contentious. Here we use resonant inelastic Xray scattering (RIXS) over a wide
temperature range across the Verwey transition to identify and separate out the
magnetic excitations derived from nominal Fe$^{2+}$ and Fe$^{3+}$ states.
Comparison of the RIXS results with crystalfield multiplet calculations shows
that the spinorbital $dd$ excitons of the Fe$^{2+}$ sites arise from a
tetragonal JahnTeller active polaronic distortion of the Fe$^{2+}$O$_6$
octahedra. These lowenergy excitations, which get weakened for temperatures
above 350 K but persist at least up to 550 K, are distinct from optical
excitations and best explained as magnetic polarons.

A topological Dirac semimetal is a novel state of quantum matter which has
recently attracted much attention as an apparent 3D version of graphene. In
this paper, we report critically important results on the electronic structure
of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial
groundstate. Our studies, for the first time, reveal that the two 3D Dirac
cones go through a topological change in the constant energy contour as a
function of the binding energy, featuring a Lifshitz point, which is missing in
a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of
graphene). Our results identify the first example of a band saddle point
singularity in 3D Dirac materials. This is in contrast to its 2D analogs such
as graphene and the helical Dirac surface states of a topological insulator.
The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz
point along its crystalline rotational axis away from the Kramers point serves
as a decisive signature for the symmetryprotected nature of the Dirac
semimetal's topological groundstate.

Experimental identification of threedimensional (3D) Dirac semimetals in
solid state systems is critical for realizing exotic topological phenomena and
quantum transport such as the Weyl phases, high temperature linear quantum
magnetoresistance and topological magnetic phases. Using high resolution
angleresolved photoemission spectroscopy, we performed systematic electronic
structure studies on wellknown compound Cd3As2. For the first time, we observe
a highly linear bulk Dirac cone located at the Brillouin zone center projected
onto the (001) surface which is consistent with a 3D Dirac semimetal phase in
Cd3As2. Remarkably, an unusually high Dirac Fermion velocity up to 10.2
\textrm{\AA}{\cdot}$eV (1.5 \times 10^{6} ms^1) is seen in samples where the
mobility far exceeds 40,000 cm^2/V.s suggesting that Cd3As2 can be a promising
candidate as a hypercone analog of graphene in many deviceapplications which
can also incorporate topological quantum phenomena in a large gap setting. Our
experimental identification of this novel topological 3D Dirac semimetal phase,
distinct from a 3D topological insulator phase discovered previously, paves the
way for exploring higher dimensional relativistic physics in bulk transport and
for realizing novel Fermionic matter such as a Fermi arc nodal metal.

Symmetry or topology protected Dirac fermion states in two and three
dimensions constitute novel quantum systems that exhibit exotic physical
phenomena. However, none of the studied spinorbit materials are suitable for
realizing bulk multiplet Dirac states for the exploration of interacting Dirac
physics. Here we present experimental evidence, for the first time, that the
compound Na3Bi hosts a bulk spinorbit Dirac multiplet and their interaction or
overlap leads to a Lifshitz transition in momentum space  a condition for
realizing interactions involving Dirac states. By carefully preparing the
samples at a nonnaturalcleavage (100) crystalline surface, we uncover many
novel electronic and spin properties in Na3Bi by utilizing high resolution
angle and spinresolved photoemission spectroscopy measurements. We observe
two bulk 3D Dirac nodes that locate on the opposite sides of the bulk zone
center point $\Gamma$, which exhibit a Fermi surface Lifshitz transition and a
saddle point singularity. Furthermore, our data shows evidence for the possible
existence of theoretically predicted weak 2D nontrivial spinorbit surface
state with helical spin polarization that are nestled between the two bulk
Dirac cones, consistent with the theoretically calculated (100)
surfacearcmodes. Our main experimental observation of a rich multiplet of
Dirac structure and the Lifshitz transition opens the door for inducing
electronic instabilities and correlated physical phenomena in Na3Bi, and paves
the way for the engineering of novel topological states using Na3Bi predicted
in recent theory.

Quantitative understanding of the relationship between quantum tunneling and
Fermi surface spin polarization is key to device design using topological
insulator surface states. By using spinresolved photoemission spectroscopy
with ppolarized light in topological insulator Bi2Se3 thin films across the
metaltoinsulator transition, we observe that for a given film thickness, the
spin polarization is large for momenta far from the center of the surface
Brillouin zone. In addition, the polarization decreases significantly with
enhanced tunneling realized systematically in thin insulating films, whereas
magnitude of the polarization saturates to the bulk limit faster at larger
wavevectors in thicker metallic films. Our theoretical model calculations
capture this delicate relationship between quantum tunneling and Fermi surface
spin polarization. Our results suggest that the polarization current can be
tuned to zero in thin insulating films forming the basis for a future
spinswitch nanodevice.

The Kondo insulator SmB6 has long been known to exhibit low temperature (T <
10K) transport anomaly and has recently attracted attention as a new
topological insulator candidate. By combining lowtemperature and high
energymomentum resolution of the laserbased ARPES technique, for the first
time, we probe the surface electronic structure of the anomalous conductivity
regime. We observe that the bulk bands exhibit a Kondo gap of 14 meV and
identify ingap lowlying states within a 4 meV window of the Fermi level on
the (001)surface of this material. The lowlying states are found to form
electronlike Fermi surface pockets that enclose the X and the Gamma points of
the surface Brillouin zone. These states disappear as temperature is raised
above 15K in correspondence with the complete disappearance of the 2D
conductivity channels in SmB6. While the topological nature of the ingap
metallic states cannot be ascertained without spin (spintexture) measurements
our bulk and surface measurements carried out in the
transportanomalytemperature regime (T < 10K) are consistent with the
firstprinciple predicted Fermi surface behavior of a topological Kondo
insulator phase in this material.

Using angleresolved photoemission spectroscopy, we report electronic
structure for representative members of ternary topological insulators. We show
that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4,
exhibit a singly degenerate Diraclike surface state, while Bi2Se2S is a fully
gapped insulator with no measurable surface state. One of these compounds,
Bi2Se2Te, shows tunable surface state dispersion upon its electronic alloying
with Sb (SbxBi2xSe2Te series). Other members of the ternary family such as
GeBi2Te4 and BiTe1.5S1.5 show an ingap surface Dirac point, the former of
which has been predicted to show nonzero weak topological invariants such as
(1;111); thus belonging to a different topological class than BiTe1.5S1.5. The
measured band structure presented here will be a valuable guide for
interpreting transport, thermoelectric, and thermopower measurements on these
compounds. The unique surface band topology observed in these compounds
contributes towards identifying designer materials with desired flexibility
needed for thermoelectric and spintronic device fabrication.

Xray absorption spectroscopy (XAS), optical reflectance spectroscopy, and
the Hall effect measurements were used to investigate the electronic structure
in La_0.7Ce_0.3MnO_3 thin films (LCeMO). The XAS results are consistent with
those obtained from LDA+U calculations. In that the doping of Ce has shifted up
the Fermi level and resulted in marked shrinkage of hole pockets originally
existing in La_0.7Ca_0.3MnO_3 (LCaMO). The Hall measurements indicate that in
LCeMO the carriers are still displaying the characteristics of holes as LDA+U
calculations predict. Analyses of the optical reflectance spectra evidently
disapprove the scenario that the present LCeMO might have been dominated by the
Ladeficient phases.