
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spinorbit torque. Antiferromagnetically coupled trilayers, namely the socalled synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spinorbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferromagnetic coupling. It is found that the magnetization of two CoFeB layers can be switched between two antiparallel states simultaneously. This observation is replicated by the theoretical calculations by solving StonerWohlfarth model and LandauLifshitzGilbert equation. Our findings combine spinorbit torque and interlayer coupling, which might advance the magnetic memories with low stray field and low power consumption.

Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of twodimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the lowtemperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (\sigma_AH \propto \sigma^1.6_xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.