• ### Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region(1802.10456)

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.
• ### Photoluminescence quantum efficiency of Er optical centers in GaN epilayers(1611.08620)

Nov. 25, 2016 cond-mat.mtrl-sci
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.
• This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C. Please note that version 3 on the archive is the auxiliary version of the Physics of the B Factories book. This uses the notation alpha, beta, gamma for the angles of the Unitarity Triangle. The nominal version uses the notation phi_1, phi_2 and phi_3. Please cite this work as Eur. Phys. J. C74 (2014) 3026.
• ### Antisite disorder driven spontaneous exchange bias effect in La2-xSrxCoMnO6 (0<x<1)(1508.00084)

Doping at the rare-earth site by divalent alkaline-earth ions in perovskite lattice has witnessed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report an antisite disorder driven spontaneous exchange bias effect as a result of hole carrier (Sr2+) doping in La2-xSrxCoMnO6 (0 < x < 1) double perovskites. X-ray diffraction and Raman spectroscopy have evidenced an increase in disorder with the increase of Sr content up to x = 0.5 and thereby decreases from x = 0.5 to 1. X-ray absorption spectroscopy has revealed that only Co is present in mixed valent Co2+ and Co3+ states with Sr doping to compensate the charge neutrality. Magnetotransport is strongly correlated with the increase of antisite disorder. The antisite disorder at the B-site interrupts the long-range ferromagnetic order by introducing various magnetic interactions and instigates reentrant glassy dynamics, phase separation and canted type antiferromagnetic behavior with the decrease of temperature. This leads to novel magnetic microstructure with unidirectional anisotropy that causes spontaneous exchange bias effect that can be tuned with the amount of antisite disorder.
• ### Excitation Mechanisms of Er Optical Centers in GaN Epilayers(1507.05119)

July 17, 2015 cond-mat.mtrl-sci
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However, these centers have different photoluminescence spectra, decay dynamics, and excitation cross sections. The isolated Er optical center, which can be excited by either mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be excited through band-to-band excitation but has the largest cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate new approaches for realization of optical amplification, and possibly lasing, at room temperature.
• ### Metamagnetic behavior and effect of field cooling on sharp magnetization jumps in multiferroic Y2CoMnO6(1407.8276)

We present sharp magnetization jumps and field induced irreversibility in magnetization in multiferroic Y2CoMnO6. Appearance of magnetic relaxation and field sweep rate dependence of magnetization jumps resemble the martensite like scenario and suggests the coexistence of E*-type antiferromagnetic and ferromagnetic phases at low temperatures. In Y2CoMnO6, the critical field required for the sharp jump can be increased or decreased depening on the magnitude and direction of the cooling field; this is remarkably different from manganites or other metamagnetic materials where the critical field increases irrespective of the direction of the field cooling. The cooling field dependence on the sharp magnetization jumps has been described by considering exchange pinning mechanism at the interface, like in exchange bias model.
• ### Metastable giant moments in Gd-implanted GaN, Si, and sapphire(1103.5322)

We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.
• ### Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor(cond-mat/0610870)

Oct. 31, 2006 cond-mat.mtrl-sci
We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $\mu_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 \mu_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.
• ### Comparative analysis of specific heat of YNi2B2C using nodal and two-gap models(cond-mat/0512291)

The magnetic field dependence of low temperature specific heat in YNi2B2C was measured and analyzed using various pairing order parameters. At zero magnetic field, the two-gap model which has been successfully applied to MgB2 and the point-node model, appear to describe the superconducting gap function of YNi2B2C better than other models based on the isotropic s-wave, the d-wave line nodes, or the s+g wave. The two energy gaps, delta_L=2.67 meV and delta_S=1.19 meV are obtained. The observed nonlinear field dependence of electronic specific heat coefficient, gamma(H)~H0.47, is quantitatively close to gamma(H)~H0.5 expected for nodal superconductivity or can be qualitatively explained using two-gap scenario. Furthermore, the positive curvature in Hc2(T) near Tc is qualitatively similar to that in the other two-gap superconductor MgB2.