
Josephson junctions defined in strong spin orbit semiconductors are highly
interesting for the search for topological systems. However, next to
topological edge states that emerge in a sufficient magnetic field, trivial
edge states can also occur. We study the trivial edge states with
superconducting quantum interference measurements on nontopological InAs
Josephson junctions. We observe a SQUID pattern, an indication of
superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is
observed that, as we find, stems from crossed Andreev states.

Semiconductor nanowires have opened new research avenues in quantum transport
owing to their confined geometry and electrostatic tunability. They have
offered an exceptional testbed for superconductivity, leading to the
realization of hybrid systems combining the macroscopic quantum properties of
superconductors with the possibility to control charges down to a single
electron. These advances brought semiconductor nanowires to the forefront of
efforts to realize topological superconductivity and Majorana modes. A prime
challenge to benefit from the topological properties of Majoranas is to reduce
the disorder in hybrid nanowire devices. Here, we show ballistic
superconductivity in InSb semiconductor nanowires. Our structural and chemical
analyses demonstrate a highquality interface between the nanowire and a NbTiN
superconductor which enables ballistic transport. This is manifested by a
quantized conductance for normal carriers, a strongly enhanced conductance for
Andreevreflecting carriers, and an induced hard gap with a significantly
reduced density of states. These results pave the way for disorderfree
Majorana devices.

Spinorbit interaction is investigated in a dual gated InAs/GaSb quantum
well. Using an electric field the quantum well can be tuned between a single
carrier regime with exclusively electrons as carriers and a twocarriers regime
where electrons and holes coexist. Spinorbit interaction in both regimes
manifests itself as a beating in the Shubnikovde Haas oscillations. In the
single carrier regime the linear Dresselhaus strength is characterized by
$\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to
53 meV$\AA$ by changing the electric field. In the twocarriers regime the spin
splitting shows a nonmonotonic behavior with gate voltage, which is consistent
with our band structure calculations.

Topological superconductivity is a state of matter that can host Majorana
modes, the building blocks of a topological quantum computer. Many experimental
platforms predicted to show such a topological state rely on proximityinduced
superconductivity. However, accessing the topological properties requires an
induced hard superconducting gap, which is challenging to achieve for most
material systems. We have systematically studied how the interface between an
InSb semiconductor nanowire and a NbTiN superconductor affects the induced
superconducting properties. Step by step, we improve the homogeneity of the
interface while ensuring a barrierfree electrical contact to the
superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field
stability of NbTiN allows the InSb nanowire to maintain a hard gap and a
supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement
for topological superconductivity in onedimensional systems. Our study
provides a guideline to induce superconductivity in various experimental
platforms such as semiconductor nanowires, two dimensional electron gases and
topological insulators, and holds relevance for topological superconductivity
and quantum computation.

Due to a strong spinorbit interaction and a large Land\'e gfactor, InSb
plays an important role in research on Majorana fermions. To further explore
novel properties of Majorana fermions, hybrid devices based on quantum wells
are conceived as an alternative approach to nanowires. In this work, we report
a pronounced conductance quantization of quantum point contact devices in
InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large
inplane (g1=26) and outofplane (g1=52) gfactor anisotropy.
Additionally, we investigate crossings of subbands with opposite spins and
extract the electron effective mass from magnetic depopulation of
onedimensional subbands.

We present transport and scanning SQUID measurements on InAs/GaSb double
quantum wells, a system predicted to be a twodimensional topological
insulator. Top and back gates allow independent control of density and band
offset, allowing tuning from the trivial to the topological regime. In the
trivial regime, bulk conductivity is quenched but transport persists along the
edges, superficially resembling the predicted helical edgechannels in the
topological regime. We characterize edge conduction in the trivial regime in a
wide variety of sample geometries and measurement configurations, as a function
of temperature, magnetic field, and edge length. Despite similarities to
studies claiming measurements of helical edge channels, our characterization
points to a nontopological origin for these observations.

A Corbino ring geometry is utilized to analyze edge and bulk conductance of
InAs/GaSb quantum well structures. We show that edge conductance exists in the
trivial regime of this theoreticallypredicted topological system with a
temperature insensitive linear resistivity per unit length in the range of 2
kOhm/um. A resistor network model of the device is developed to decouple the
edge conductance from the bulk conductance, providing a quantitative technique
to further investigate the nature of this trivial edge conductance,
conclusively identified here as being of ntype.