• Observation of spin-orbit coupling induced Weyl points and topologically protected Kondo effect in a two-electron double quantum dot(1804.06447)

April 17, 2018 cond-mat.mes-hall
Recent years have brought an explosion of activities in the research of topological aspects of condensed-matter systems. Topologically non-trivial phases of matter are typically accompanied by protected surface states or exotic degenerate excitations such as Majorana end states or Haldane's localized spinons. Topologically protected degeneracies can, however, also appear in the bulk. An intriguing example is provided by Weyl semimetals, where topologically protected electronic band degeneracies and exotic surface states emerge even in the absence of interactions. Here we demonstrate experimentally and theoretically that Weyl degeneracies appear naturally in an interacting quantum dot system, for specific values of the external magnetic field. These magnetic Weyl points are robust against spin-orbit coupling unavoidably present in most quantum dot devices. Our transport experiments through an InAs double dot device placed in magnetic field reveal the presence of a pair of Weyl points, exhibiting a robust ground state degeneracy and a corresponding protected Kondo effect.
• Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection(1711.06864)

Dec. 29, 2017 cond-mat.mes-hall
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective $g$-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure.
• Observation of the 4$\pi$-periodic Josephson effect in InAs nanowires(1712.08459)

Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum information stored in the MZM. As a next step towards topological quantum computation, charge parity conserving experiments based on the Josephson effect are required, which can also help exclude suggested non-topological origins of the zero bias conductance anomaly. Here we report the direct measurement of the Josephson radiation frequency in InAs nanowires with epitaxial aluminium shells. For the first time, we observe the $4\pi$-periodic Josephson effect above a magnetic field of $\approx 200\,$mT, consistent with the estimated and measured topological phase transition of similar devices.
• Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B(1702.01990)

Feb. 7, 2017 cond-mat.mtrl-sci
Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de- oxidation of the III-V semiconductor surface) in an epitaxy system. Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 $^{\circ}$C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters ($\leq$ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.
• Current-phase relations of few-mode InAs nanowire Josephson junctions(1701.01188)

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, $I$, versus the phase, $\phi$, across the junction is called the current-phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. We measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunable junction, we found that the CPR varied with gate voltage: Near the onset of supercurrent, we observed behavior consistent with resonant tunneling through a single, highly transmitting mode. The gate dependence is consistent with modeled subband structure that includes an effective tunneling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.
• Tuning Yu-Shiba-Rusinov States in a Quantum Dot(1609.03988)

Sept. 13, 2016 cond-mat.supr-con
We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling parameters of the system are tuned and as the gap is closed by means of a magnetic field. We systematically extract system parameters by using numerical renormalization group theory fits as a level of the quantum dot is tuned through a quantum phase transition electrostatically and magnetically. We also give an intuitive description of sub-gap excitations.
• Microwave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctions(1609.00333)

The superconducting proximity effect in semiconductor nanowires has recently enabled the study of novel superconducting architectures, such as gate-tunable superconducting qubits and multiterminal Josephson junctions. As opposed to their metallic counterparts, the electron density in semiconductor nanosystems is tunable by external electrostatic gates providing a highly scalable and in-situ variation of the device properties. In addition, semiconductors with large g-factor and spin-orbit coupling have been shown to give rise to exotic phenomena in superconductivity, such as $\varphi_0$ Josephson junctions and the emergence of Majorana bound states. Here, we report microwave spectroscopy measurements that directly reveal the presence of Andreev bound states (ABS) in ballistic semiconductor channels. We show that the measured ABS spectra is a result of transport channels with gate-tunable, high transmission probabilities up to 0.9, which is required for gate-tunable Andreev qubits and beneficial for braiding schemes of Majorana states. For the first time, we detect excitations of a spin-split pair of ABS and observe symmetry-broken ABS, a direct consequence of the spin-orbit coupling in the semiconductor.
• Non-collinear spin-orbit magnetic fields in a carbon nanotube double quantum dot(1606.01065)

June 3, 2016 cond-mat.mes-hall
We demonstrate experimentally that non-collinear intrinsic spin-orbit magnetic fields can be realized in a curved carbon nanotube two-segment device. Each segment, analyzed in the quantum dot regime, shows near four-fold degenerate shell structure allowing for identification of the spin-orbit coupling and the angle between the two segments. Furthermore, we determine the four unique spin directions of the quantum states for specific shells and magnetic fields. This class of quantum dot systems is particularly interesting when combined with induced superconducting correlations as it may facilitate unconventional superconductivity and detection of Cooper pair entanglement. Our device comprises the necessary elements.
• Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires(1601.01854)

Jan. 8, 2016 cond-mat.mes-hall
Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore a simple electrostatic model is introduced to calculate the expected change of SOI. Good agreement is found between the experimental results and the estimated Rashba type SOI generated by the gate-induced electric field.
• $g$-factor anisotropy in nanowire-based InAs quantum dots(1309.0726)

Sept. 3, 2013 cond-mat.mes-hall
The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuously in the range between $|g^*| = 5$ and 15.
• Advances in the theory of III-V Nanowire Growth Dynamics(1301.7441)

July 17, 2013 cond-mat.mes-hall
Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.
• Single nanowire solar cells beyond the Shockley-Queisser limit(1301.1068)

Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination.
• Doping incorporation paths in catalyst-free Be-doped GaAs nanowires(1210.1670)

Oct. 5, 2012 cond-mat.mtrl-sci
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.
• Nanoelectromechanical coupling in fullerene peapods probed via resonant electrical transport experiments(1009.1168)

Sept. 6, 2010 cond-mat.mes-hall
Fullerene peapods, that is carbon nanotubes encapsulating fullerene molecules, can offer enhanced functionality with respect to empty nanotubes. However, the present incomplete understanding of how a nanotube is affected by entrapped fullerenes is an obstacle for peapods to reach their full potential in nanoscale electronic applications. Here, we investigate the effect of C60 fullerenes on electron transport via peapod quantum dots. Compared to empty nanotubes, we find an abnormal temperature dependence of Coulomb blockade oscillations, indicating the presence of a nanoelectromechanical coupling between electronic states of the nanotube and mechanical vibrations of the fullerenes. This provides a method to detect the C60 presence and to probe the interplay between electrical and mechanical excitations in peapods, which thus emerge as a new class of nanoelectromechanical systems.
• Gate-dependent spin-orbit coupling in multi-electron carbon nanotubes(1008.1600)

Aug. 12, 2010 cond-mat.mes-hall
Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in a carbon nanotube quantum dot in the general multi-electron regime in presence of finite disorder. Further, we find a strong systematic dependence of the spin-orbit coupling on the electron occupation of the quantum dot. This dependence, which even includes a sign change is not demonstrated in any other system and follows from the curvature-induced spin-orbit split Dirac-spectrum of the underlying graphene lattice. Our findings unambiguously show that the spin-orbit coupling is a general property of nanotube quantum dots which provide a unique platform for the study of spin-orbit effects and their applications.
• Transport via coupled states in a C60 peapod quantum dot(1002.0477)

Feb. 2, 2010 cond-mat.mes-hall
We have measured systematic repetitions of avoided crossings in low temperature three-terminal transport through a carbon nanotube with encapsulated C60 molecules. We show that this is a general effect of the hybridization of a host quantum dot with an impurity. The well-defined nanotube allows identification of the properties of the impurity, which we suggest to be a chain of C60 molecules inside the nanotube. This electronic coupling between the two subsystems opens the interesting and potentially useful possibility of contacting the encapsulated molecules via the tube.
• Shell filling in closed single-wall carbon nanotube quantum dots(cond-mat/0112331)

Dec. 18, 2001 cond-mat.mes-hall
We observe two-fold shell filling in the spectra of closed one-dimensional quantum dots formed in single-wall carbon nanotubes. Its signatures include a bimodal distribution of addition energies, correlations in the excitation spectra for different electron number, and alternation of the spins of the added electrons. This provides a contrast with quantum dots in higher dimensions, where such spin pairing is absent. We also see indications of an additional fourfold periodicity indicative of K-K' subband shells. Our results suggest that the absence of shell filling in most isolated nanotube dots results from disorder or nonuniformity.
• Quantum dots in suspended single-wall carbon nanotubes(cond-mat/0108020)

Aug. 1, 2001 cond-mat.mes-hall
We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after suspension, as well as to study transport in suspended tubes. As an example of the utility of the technique, we study quantum dots in suspended tubes, finding that their capacitances are reduced owing to the removal of the dielectric substrate.
• Transport phenomena in nanotube quantum dots from strong to weak confinement(cond-mat/0105289)

May 15, 2001 cond-mat.mes-hall
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade dominates, the nanotubes act as one-dimensional quantum dots. For stronger coupling to the leads the conductance can be strongly enhanced by inelastic cotunneling and the Kondo effect. For open contacts Coulomb blockade is completely suppressed, and the low-temperature conductance remains generally high, although we often see distinct dips in the conductance versus gate voltage which may result from resonant backscattering.
• Kondo physics in carbon nanotubes(cond-mat/0011310)

Nov. 17, 2000 cond-mat.mes-hall
The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been found to act as one-dimensional quantum dots, Luttinger-liquids, proximity-induced superconductors and ballistic and diffusive one-dimensional metals. Here we report that electrically-contacted single-wall nanotubes can serve as powerful probes of Kondo physics, demonstrating the universality of the Kondo effect. Arising in the prototypical case from the interaction between a localized impurity magnetic moment and delocalized electrons in a metallic host, the Kondo effect has been used to explain enhanced low-temperature scattering from magnetic impurities in metals, and also occurs in transport through semiconductor quantum dots. The far higher tunability of dots (in our case, nanotubes) compared with atomic impurities renders new classes of Kondo-like effects accessible. Our nanotube devices differ from previous systems in which Kondo effects have been observed, in that they are one-dimensional quantum dots with three-dimensional metal (gold) reservoirs. This allows us to observe Kondo resonances for very large electron number (N) in the dot, and approaching the unitary limit (where the transmission reaches its maximum possible value). Moreover, we detect a previously unobserved Kondo effect, occurring for even values of N in a magnetic field.
• One-dimensional transport in bundles of single-walled carbon nanotubes(cond-mat/9904179)

April 13, 1999 cond-mat.mes-hall
We report measurements of the temperature and gate voltage dependence for individual bundles (ropes) of single-walled nanotubes. When the conductance is less than about e^2/h at room temperature, it is found to decrease as an approximate power law of temperature down to the region where Coulomb blockade sets in. The power-law exponents are consistent with those expected for electron tunneling into a Luttinger liquid. When the conductance is greater than e^2/h at room temperature, it changes much more slowly at high temperatures, but eventually develops very large fluctuations as a function of gate voltage when sufficiently cold. We discuss the interpretation of these results in terms of transport through a Luttinger liquid.