• ### Phase diagrams of Weyl semimetals with competing diagonal and off-diagonal disorders(1801.04394)

A Weyl semimetal (WSM) is a topological material that hosts Weyl fermions as quasiparticles in the bulk. We study the effects of diagonal and off-diagonal disorders on WSMs by adopting a tight-binding model that supports the WSM, the three-dimensional quantum anomalous Hall (3D QAH) and the normal insulator (NI) phases in the clean limit. Basing on the calculation of the localization length and the Hall conductivity, we present rich phase diagrams when WSMs are subject to the two types of disorders. We find that the WSM with well-separated Weyl nodes is stable against weak disorder. Weak diagonal disorder may annihilate the Weyl nodes in the WSM phase close to the 3D QAH phase, resulting in a 3D QAH state, and it could also create Weyl nodes in the NI phase near the WSM phase, leading to a WSM. Reversely, weak off-diagonal disorder may nucleate Weyl nodes in the 3D QAH phase in proximity to the WSM phase, causing a 3D QAH-WSM transition, or it could destroy Weyl nodes in the WSM phase near the NI phase, bringing about a WSM-NI transition. We observe a diffusive anomalous Hall metal (DAHM) phase at moderate disorder strength. The DAHM appears in a wide range of the phase diagram when the diagonal disorder dominates over the off-diagonal disorder, while the DAHM is found to exist in a narrow region or be missing in the phase diagram when the off-diagonal disorder dominates.
• ### Single Magnetic Impurity in Tilted Dirac Surface States(1711.00634)

Dec. 29, 2017 cond-mat.str-el
We utilize variational method to investigate the Kondo screening of a spin-1/2 magnetic impurity in tilted Dirac surface states with the Dirac cone tilted along the $k_y$-axis. We mainly study about the effect of the tilting term on the binding energy and the spin-spin correlation between magnetic impurity and conduction electrons, and compare the results with the counterparts in a two dimensional helical metal. The binding energy has a critical value while the Dirac cone is slightly tilted. However, as the tilting term increases, the density of states around the Fermi surface becomes significant, such that the impurity and the host material always favor a bound state. The diagonal and the off-diagonal terms of the spin-spin correlation between the magnetic impurity and conduction electrons are also studied. Due to the spin-orbit coupling and the tilting of the spectra, various components of spin-spin correlation show very strong anisotropy in coordinate space, and are of power-law decay with respect to the spatial displacements.
• ### A magnetic Impurity in a Weyl semimetal(1509.05180)

Nov. 17, 2015 cond-mat.str-el
We utilize the variational method to study the Kondo screening of a spin-$1/2$ magnetic impurity in a three-dimensional (3D) Weyl semimetal with two Weyl nodes along the $k_z$-axis. The model reduces to a 3D Dirac semimetal when the separation of the two Weyl nodes vanishes. When the chemical potential lies at the nodal point, $\mu=0$, the impurity spin is screened only if the coupling between the impurity and the conduction electron exceeds a critical value. For finite but small $\mu$, the impurity spin is weakly bound due to the low density of state, which is proportional to $\mu^2$, contrary to that in a 2D Dirac metal such as graphene and 2D helical metal where the density of states is proportional to $|\mu|$. The spin-spin correlation function $J_{uv}(\mathbf{r})$ between the spin $v$-component of the magnetic impurity at the origin and the spin $u$-component of a conduction electron at spatial point $\mathbf{r}$, is found to be strongly anisotropic due to the spin-orbit coupling, and it decays in the power-law. The main difference of the Kondo screening in 3D Weyl semimetals and in Dirac semimetals is in the spin $x$- ($y$-) component of the correlation function in the spatial direction of the $z$-axis.
• ### Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells(1310.4051)

Jan. 19, 2014 cond-mat.mes-hall
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $\xi$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$.