
In Nakamura et al.[1], the authors present evidence of shift current in the
electronic ferroelectric tetrathiafulvalene$p$chloranil (TTFCA). Since the
bulk photovoltaic current in noncentrosymmetric crystals has two
contributions, namely the ballistic and shift, we explain why the experimental
data and analysis presented by the authors does not permit unambiguous
identification of shift current, and is not consistent with the mechanism of
shift.

We report a strong thickness dependence of the complex frequencydependent
optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001),
LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the
imaginary part of the dielectric function and spectral shifts of 0.5 eV for a
given magnitude of absorption are observed. On the basis of the experimental
data and firstprinciples density functional theory calculations of the
dielectric function, its evolution with thickness from 4 to 63 nm has several
regimes. In the thinnest, straincoherent films, the response is characterized
by a significant contribution from the free surface that dominates strain
effects. However, at intermediate and larger thicknesses approaching the
bulklike film, strain coherence and partial strain relaxation persist and in
influence the dielectric function.

We present a comprehensive multiphonon Raman and complementary infrared
analysis for bulk and monolayer MoS2.For the bulk the analysis consists of
symmetry assignment from which we obtain a broad set of allowed second order
transitions at the high symmetry M,K and gamma Brillouin zone points. The
attribution of about 80 transitions of up to fifth order Raman processes are
proposed in the low temperature(95K)resonant Raman spectrum measured with the
excitation energy of 1.96 eV,which is slightly shifted from the A exciton. We
propose that the main contributions come from four
phonons:A1g(M),E12g(M2),E22g(M1)(TA'(M))and E22g (M2)(LA'(M)). The last three
are single degenerate phonons at M with an origin of the E12g(gamma)and
E22g(gamma)phonons. Among the four phonons, we identify in the resonant Raman
spectra all(but one) of the second order overtones,combination and difference
bands and many of the third order bands. Consistent with the expectation that
at the M point only combinations with the same inversion symmetry (g or u)are
Raman allowed, the contribution of combinations with the LA(M)phonon can not be
considered with the above four phonons. Although minor,contribution from K
point and possibly gamma point phonons are also evident. The "2LA
band",measured at ~460 cm1 is reassigned.Supported by the striking similarity
between this band, measured under off resonant conditions, and recently
published two phonon density of states, we propose that the lower part of the
band,previously attributed to 2LA(M),is due to a van Hove singularity between K
and M. The higher part,previously attributed exclusively to the
A2u(gamma)phonon,is mostly due to the LA and LA' phonons at M. For the
monolayer MoS2, the second order phonon processes from M and gamma Brillouin
zone points are also analyzed and are discussed within similar framework to
that of the bulk.

Nuclear site analysis methods are used to enumerate the normal modes of
$ABX_{3}$ perovskite polymorphs with octahedral rotations. We provide the modes
of the fourteen subgroups of the cubic aristotype describing the Glazer
octahedral tilt patterns, which are obtained from rotations of the $BX_{6}$
octahedra with different sense and amplitude about high symmetry axes. We
tabulate all normal modes of each tilt system and specify the contribution of
each atomic species to the mode displacement pattern, elucidating the physical
meaning of the symmetry unique modes. We have systematically generated 705
schematic atomic displacement patterns for the normal modes of all 15 (14
rotated + 1 unrotated) Glazer tilt systems. We show through some illustrative
examples how to use these tables to identify the octahedral rotations,
symmetric breathing, and firstorder JahnTeller antisymmetric breathing
distortions of the $BX_{6}$ octahedra, and the associated Raman selection
rules. We anticipate that these tables and schematics will be useful in
understanding the lattice dynamics of bulk perovskites and would serve as
reference point in elucidating the atomic origin of a wide range of physical
properties in synthetic perovskite thin films and superlattices.