• We present a detailed measurement of charged two-pion correlation functions in 0%-30% centrality $\sqrt{s_{_{NN}}}=200$ GeV Au$+$Au collisions by the PHENIX experiment at the Relativistic Heavy Ion Collider. The data are well described by Bose-Einstein correlation functions stemming from L\'evy-stable source distributions. Using a fine transverse momentum binning, we extract the correlation strength parameter $\lambda$, the L\'evy index of stability $\alpha$ and the L\'evy length scale parameter $R$ as a function of average transverse mass of the pair $m_T$. We find that the positively and the negatively charged pion pairs yield consistent results, and their correlation functions are represented, within uncertainties, by the same L\'evy-stable source functions. The $\lambda(m_T)$ measurements indicate a decrease of the strength of the correlations at low $m_T$. The L\'evy length scale parameter $R(m_T)$ decreases with increasing $m_T$, following a hydrodynamically predicted type of scaling behavior. The values of the L\'evy index of stability $\alpha$ are found to be significantly lower than the Gaussian case of $\alpha=2$, but also significantly larger than the conjectured value that may characterize the critical point of a second-order quark-hadron phase transition.
• Production of $\pi^0$ and $\eta$ mesons has been measured at midrapidity in Cu$+$Au collisions at $\sqrt{s_{_{NN}}}$=200 GeV. Measurements were performed in $\pi^0(\eta)\rightarrow\gamma\gamma$ decay channel in the 1(2)-20 GeV/$c$ transverse momentum range. A strong suppression is observed for $\pi^0$ and $\eta$ meson production at high transverse momentum in central Cu$+$Au collisions relative to the $p$$+$$p$ results scaled by the number of nucleon-nucleon collisions. In central collisions the suppression is similar to Au$+$Au with comparable nuclear overlap. The $\eta/\pi^0$ ratio measured as a function of transverse momentum is consistent with $m_T$-scaling parameterization down to $p_T=$2 GeV/$c$, its asymptotic value is constant and consistent with Au$+$Au and $p$$+$$p$ and does not show any significant dependence on collision centrality. Similar results were obtained in hadron-hadron, hadron-nucleus, and nucleus-nucleus collisions as well as in $e^+e^-$ collisions in a range of collision energies $\sqrt{s_{_{NN}}}=$3--1800 GeV. This suggests that the quark-gluon-plasma medium produced in Cu$+$Cu collisions either does not affect the jet fragmentation into light mesons or it affects the $\pi^0$ and $\eta$ the same way.
• ### Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy(1805.04440)

Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors.
• The PHENIX collaboration presents first measurements of low-momentum ($0.4<p_T<3$ GeV/$c$) direct-photon yields from Au$+$Au collisions at $\sqrt{s_{_{NN}}}$=39 and 62.4 GeV. For both beam energies the direct-photon yields are substantially enhanced with respect to expectations from prompt processes, similar to the yields observed in Au$+$Au collisions at $\sqrt{s_{_{NN}}}$=200. Analyzing the photon yield as a function of the experimental observable $dN_{\rm ch}/d\eta$ reveals that the low-momentum ($>$1\,GeV/$c$) direct-photon yield $dN_{\gamma}^{\rm dir}/d\eta$ is a smooth function of $dN_{\rm ch}/d\eta$ and can be well described as proportional to $(dN_{\rm ch}/d\eta)^\alpha$ with $\alpha{\sim}$1.25. This new scaling behavior holds for a wide range of beam energies at the Relativistic Heavy Ion Collider and Large Hadron Collider, for centrality selected samples, as well as for different, $A$$+$$A$ collision systems. At a given beam energy the scaling also holds for high $p_T$ ($>5$\,GeV/$c$) but when results from different collision energies are compared, an additional $\sqrt{s_{_{NN}}}$-dependent multiplicative factor is needed to describe the integrated-direct-photon yield.
• ### Charged excitons in monolayer WSe$_2$: experiment and theory(1705.02110)

Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers.
• ### Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride(1805.01749)

May 4, 2018 cond-mat.mes-hall
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
• ### THz nanofocusing with cantilevered THz-resonant antenna tips(1805.01150)

May 3, 2018 physics.optics
We developed THz-resonant scanning probe tips, yielding strongly enhanced and nanoscale confined THz near fields at their tip apex. The tips with length in the order of the THz wavelength ({\lambda} = 96.5 {\mu}m) were fabricated by focused ion beam (FIB) machining and attached to standard atomic force microscopy (AFM) cantilevers. Measurements of the near-field intensity at the very tip apex (25 nm radius) as a function of tip length, via graphene-based (thermoelectric) near-field detection, indicate their first and second order geometrical antenna resonances for tip length of 33 and 78 {\mu}m, respectively. On resonance, we find that the near-field intensity is enhanced by one order of magnitude compared to tips of 17 {\mu}m length (standard AFM tip length), which is corroborated by numerical simulations that further predict remarkable intensity enhancements of about 107 relative to the incident field. Because of the strong field enhancement and standard AFM operation of our tips, we envision manifold and straightforward future application in scattering-type THz near-field nanoscopy and THz photocurrent nanoimaging, nanoscale nonlinear THz imaging, or nanoscale control and manipulation of matter employing ultrastrong and ultrashort THz pulses.
• ### A graphene Zener-Klein transistor cooled by a hyperbolic substrate(1702.02829)

April 25, 2018 cond-mat.mes-hall
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.
• ### Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN(1804.06623)

The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN from high quality flakes grown under high pressure. In this work, we show that hBN grown by molecular beam epitaxy (MBE) over a large surface area substrate has a similarly positive impact on the optical emission from TMD MLs. We deposit MoS$_2$ and MoSe$_2$ MLs on ultrathin hBN films (few MLs thick) grown on Ni/MgO(111) by MBE. Then we cover them with exfoliated hBN to finally obtain an encapsulated sample : exfoliated hBN/TMD ML/MBE hBN. We observe an improved optical quality of our samples compared to TMD MLs exfoliated directly on SiO$_2$ substrates. Our results suggest that hBN grown by MBE could be used as a flat and charge free substrate for fabricating TMD-based heterostructures on a larger scale.
• ### Exciton-phonon coupling in MoSe2 monolayers(1804.06340)

April 17, 2018 cond-mat.mtrl-sci
We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcodenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.
• ### Extreme Sensitivity of the Superconducting State in Thin Films(1804.04648)

April 12, 2018 cond-mat.supr-con
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where strong interactions dominate the electronic state. Unexpectedly, over the last two decades, there have been multiple reports on the observation of a state with metallic characteristics on a variety of thin-film superconductors. To date, no theoretical explanation has been able to fully capture the existence of such a state for the large variety of superconductors exhibiting it. Here we show that for two very different thin-film superconductors, amorphous indium-oxide and a single-crystal of 2H-NbSe2, this metallic state can be eliminated by filtering external radiation. Our results show that these superconducting films are extremely sensitive to external perturbations leading to the suppression of superconductivity and the appearance of temperature independent, metallic like, transport at low temperatures. We relate the extreme sensitivity to the theoretical observation that, in two-dimensions, superconductivity is only marginally stable.
• ### Cross section and longitudinal single-spin asymmetry $A_L$ for forward $W^{\pm}\rightarrow\mu^{\pm}\nu$ production in polarized $p$$+$$p$ collisions at $\sqrt{s}=510$ GeV(1804.04181)

April 11, 2018 hep-ex
We have measured the cross section and single spin asymmetries from forward $W^{\pm}\rightarrow\mu^{\pm}\nu$ production in longitudinally polarized $p$$+$$p$ collisions at $\sqrt{s}=510$ GeV using the PHENIX detector at the Relativistic Heavy Ion Collider. The cross sections are consistent with previous measurements at this collision energy, while the most forward and backward longitudinal single spin asymmetries provide new insights into the sea quark helicities in the proton. The charge of the W bosons provides a natural flavor separation of the participating partons.
• ### Quantum Wires and Waveguides Formed in Graphene by Strain(1804.00207)

Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal boron nitride. Conductance measurements across the folds reveal Coulomb blockade signatures, indicating confined charges within these structures, which act as quantum dots. Along folds, we observe sharp features in traverse resistivity measurements, attributed to an amplification of the dot conductance modulations by a resistance bridge incorporating the device. Our data indicates ballistic transport up to ~1 um along the folds. Calculations using the Dirac model including strain are consistent with measured bound state energies and predict the existence of valley-polarized currents. Our results show that graphene folds can act as straintronic quantum wires.
• ### Transfer-printed quantum-dot nanolasers on a silicon photonic circuit(1803.11552)

March 30, 2018 physics.optics, physics.app-ph
Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon waveguides cladded by silicon dioxide. We employed transfer-printing, whereby the three-dimensional stack of photonic nanostructures is assembled in a simple pick-and-place manner. Lasing operation and waveguide-coupling of an assembled single nanolaser are confirmed through micro-photoluminescence spectroscopy. Furthermore, by repetitive transfer-printing, two QD nanolasers integrated onto a single silicon waveguide are demonstrated, opening a path to develop compact light sources potentially applicable for wavelength division multiplexing.
• ### Enhancing the response of NH3 graphene-sensors by using devices with different graphene-substrate distances(1803.10355)

March 27, 2018 cond-mat.mes-hall
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has not yet been entirely established. To provide further insight on the interaction between ammonia molecules (NH3) and graphene devices, we report experimental and theoretical studies of NH3 graphene sensors with graphene supported on three substrates: SiO2, talc and hexagonal boron nitride (hBN). Our results indicate that the charge transfer from NH3 to graphene depends not only on extrinsic parameters like temperature and gas concentration, but also on the average distance between the graphene sheet and the substrate. We find that the average distance between graphene and hBN crystals is the smallest among the three substrates, and that graphene-ammonia gas sensors based on a G/hBN heterostructure exhibit the fastest recovery times for NH3 exposure and are slightly affected by wet or dry air environment. Moreover, the dependence of graphene-ammonia sensors on different substrates indicates that graphene sensors exhibit two different adsorption processes for NH3 molecules: one at the top of the graphene surface and another at its bottom side close to the substrate. Therefore, our findings show that substrate engineering is crucial to the development of graphene-based gas sensors and indicate additional routes for faster sensors.
• We present measurements of azimuthal correlations of charged hadron pairs in $\sqrt{s_{_{NN}}}=200$ GeV Au$+$Au collisions after subtracting an underlying event using a model that includes higher-order azimuthal anisotropy $v_2$, $v_3$, and $v_4$. After subtraction, the away-side ($\Delta\phi\sim\pi)$ of the highest transverse-momentum trigger ($p_T>4$ GeV/$c$) correlations is suppressed compared to that of correlations measured in $p$$+$$p$ collisions. At the lowest associated particle $p_T$, the away-side shape and yield are modified. These observations are consistent with the scenario of radiative-jet energy loss. For the lowest-$p_T$ trigger correlations, an away-side yield exists and we explore the dependence of the shape of the away-side within the context of an underlying-event model. Correlations are also studied differentially versus event-plane angle $\Psi_n$. The angular correlations show an asymmetry when selecting the sign of the trigger-particle azimuthal angle with respect to the $\Psi_2$ event plane. This asymmetry and the measured suppression of the pair yield out of plane is consistent with a path-length-dependent energy loss. No $\Psi_3$ dependence can be resolved within experimental uncertainties.
• ### Cleaning Interfaces in Layered Materials Heterostructures(1803.00912)

March 2, 2018 cond-mat.mes-hall
Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in clean interfaces. We fabricate blister-free regions of graphene encapsulated in hexagonal boron nitride of$\sim$5000$\mu$m$^{2}$, limited only by the size of the exfoliated flakes. These have mobilities up to$\sim$180000cm$^2$V$^{-1}$s$^{-1}$ at room temperature, and$\sim$1.8$\times$10$^6$cm$^2$V$^{-1}$s$^{-1}$ at 9K. We further demonstrate the effectiveness of our approach by cleaning heterostructures assembled using graphene intentionally exposed to polymers and solvents. After cleaning, these samples reach similar high mobilities. We also showcase the general applicability of our approach to layered materials by cleaning blisters in other heterostructures based on MoS$_{2}$. This demonstrates that exposure of graphene to processing-related contaminants is compatible with the realization of high mobility samples, paving the way to the development of fab-based processes for the integration of layered materials in (opto)-electronic devices.
• ### Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure(1802.09201)

We have combined spatially-resolved steady-state micro-photoluminescence ($\mu$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; \mu$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species : bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of $L_{X^D}=1.5\pm 0.02 \;\mu$m.
• ### Transport through a network of topological states in twisted bilayer graphene(1802.07317)

Feb. 20, 2018 quant-ph, cond-mat.mes-hall
Minimally twisted bilayer graphene exhibits a lattice of AB and BA stacked regions. At small carrier densities and large displacement field, topological channels emerge and form a network. We fabricate small-angle twisted bilayer graphene and tune it with local gates. In our transport measurements we observe Fabry-P\'erot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T. The Fabry-P\'erot trajectories in the bulk of the system cannot be bent by the Lorentz force. By extracting the enclosed length and area we find that the major contribution originates from trajectories encircling one row of AB/BA regions. The robustness in magnetic field and the linear spacing in density testifies to the fact that charge carriers flow in one-dimensional, topologically protected channels.
• ### RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors(1707.01657)

Feb. 13, 2018 cond-mat.mes-hall
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies as a high as 10 GHz, and studied as a function of the applied gate voltage. The combination of the superior quality hBN dielectric gate with the optimized transport characteristics of CVD grown Bi2Se3 (n~10^18cm-3 in 8 nm) allow us to attain a bulk depleted regime by dielectric gating. A quantum capacitance minimum is observed revealing a purely Dirac regime, where the Dirac surface state in proximity to the gate reaches charge neutrality, but the bottom surface Dirac cone remains charged, and couples capacitively to the top surface via the insulating bulk. Our work paves the way towards implementation of topological materials in RF devices.
• ### Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices(1802.00553)

Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW heterostructure and does not have a direct analog in other systems such as MBE-grown semiconductor heterostructures. For small twist angles, the moir\'e pattern produced by the lattice misorientation creates a long-range modulation. So far, the study of the effect of twist angles in vdW heterostructures has been mostly concentrated in graphene/hexagonal boron nitride (h-BN) twisted structures, which exhibit relatively weak interlayer interaction due to the presence of a large bandgap in h-BN. Here we show that when two graphene sheets are twisted by an angle close to the theoretically predicted 'magic angle', the resulting flat band structure near charge neutrality gives rise to a strongly-correlated electronic system. These flat bands exhibit half-filling insulating phases at zero magnetic field, which we show to be a Mott-like insulator arising from electrons localized in the moir\'e superlattice. These unique properties of magic-angle twisted bilayer graphene (TwBLG) open up a new playground for exotic many-body quantum phases in a 2D platform made of pure carbon and without magnetic field. The easy accessibility of the flat bands, the electrical tunability, and the bandwidth tunability though twist angle may pave the way towards more exotic correlated systems, such as unconventional superconductors or quantum spin liquids.
• ### Anisotropic spin-density distribution and magnetic anisotropy of strained La$_{1-x}$Sr$_x$MnO$_3$ thin films: Angle-dependent x-ray magnetic circular dichroism(1706.05183)

Magnetic anisotropies of ferromagnetic thin films are induced by epitaxial strain from the substrate via strain-induced anisotropy in the orbital magnetic moment and that in the spatial distribution of spin-polarized electrons. However, the preferential orbital occupation in ferromagnetic metallic La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films studied by x-ray linear dichroism (XLD) has always been found out-of-plane for both tensile and compressive epitaxial strain and hence irrespective of the magnetic anisotropy. In order to resolve this mystery, we directly probed the preferential orbital occupation of spin-polarized electrons in LSMO thin films under strain by angle-dependent x-ray magnetic circular dichroism (XMCD). Anisotropy of the spin-density distribution was found to be in-plane for the tensile strain and out-of-plane for the compressive strain, consistent with the observed magnetic anisotropy. The ubiquitous out-of-plane preferential orbital occupation seen by XLD is attributed to the occupation of both spin-up and spin-down out-of-plane orbitals in the surface magnetic dead layer.
• ### Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement(1801.08727)

Jan. 26, 2018 cond-mat.mtrl-sci
The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as the substrate for 2-dimensional van der Waals heterostructure devices. In this study, physical phenomena for degradation and failure in exfoliated single-crystal h-BN films were investigated using the constant-voltage stress test. At low electrical fields, the current gradually reduced and saturated with time, while the current increased at electrical fields higher than ~8 MV/cm and finally resulted in the catastrophic dielectric breakdown. These transient behaviors may be due to carrier trapping to the defect sites in h-BN because trapped carriers lower or enhance the electrical fields in h-BN depending on their polarities. The key finding is the current enhancement with time at the high electrical field, suggesting the accumulation of electrons generated by the impact ionization process. Therefore, a theoretical model including the electron generation rate by impact ionization process was developed. The experimental data support the expected degradation mechanism of h-BN. Moreover, the impact ionization coefficient was successfully extracted, which is comparable to that of SiO2, even though the fundamental band gap for h-BN is smaller than that for SiO2. Therefore, the dominant impact ionization in h-BN could be band-to-band excitation, not defect-assisted impact ionization.
• ### Many-particle effects in the cyclotron resonance of encapsulated monolayer graphene(1709.00435)

Jan. 26, 2018 cond-mat.mes-hall
We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the magnetic field strength, $B$, constant while tuning the carrier density, $n$, we find the transition energies show a pronounced non-monotonic dependence on the Landau level filling factor, $\nu\propto n/B$. This constitutes direct evidence that electron-electron interactions contribute to the Landau level transition energies in graphene, beyond the single-particle picture. Additionally, a splitting occurs in transitions to or from the lowest Landau level, which is interpreted as a Dirac mass arising from coupling of the graphene and boron nitride lattices.
• ### Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions(1712.08774)

Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions towards single-digit-nm-scale nano-magnetics/spintronics.