• ### Higgs-Axion conversion and anomalous magnetic phase diagram in TlCuCl$_3$(1805.00166)

May 1, 2018 cond-mat.str-el
What is so unique in TlCuCl$_3$ which drives so many unique magnetic properties, such as a massive Higgs mode at the magnetic critical point, long-lived paramagnons, and dimerized antiferromagnetism? To study these properties, we emply here a combination of {\it ab-initio} band structure, tight-binding parameterization, and an effective quantum field theory. Within a density-functional theory (DFT) calculation, we find an unexpected bulk Dirac cone without spin-orbit coupling (SOC). Tracing back to its origin, we identify, for the first time, the presence of a Su-Schrieffer-Heeger (SSH) like dimerized Cu chain lying in the 2D crystal structure. The SSH chain, combined with SOC, stipulates an anisotropic 3D Dirac cone where chiral and helical states are intertwined (namely, 3D SSH model). As a Heisenberg interaction is introduced, we show that the dimerized Cu sublattices of the SSH chain condensate into dimerized spin-singlet magnets. In the magnetic ground state, we also find a naturally occurring topological phase, distinguished by the axion invariant. Finally, to study how the topological axion excitation couples to magnetic excilations, we derive a Chern-Simons-Ginzburg-Landau action from the 3D SSH Hamiltonian. We find that axion term provides an additional mass term to the Higgs mode, and a lifetime to paramagnons, which are independent of the quantum critical physics.
• ### First-principles quantum transport modeling of spin-transfer and spin-orbit torques in magnetic multilayers(1801.05793)

We review a unified approach for computing: (i) spin-transfer torque in magnetic trilayers like spin-valves and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces; and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled-material, where injected charge current flows parallel to the interface. Our approach requires to construct the torque operator for a given Hamiltonian of the device and the steady-state nonequilibrium density matrix, where the latter is expressed in terms of the nonequilibrium Green's functions and split into three contributions. Tracing these contributions with the torque operator automatically yields field-like and damping-like components of spin-transfer torque or spin-orbit torque vector, which is particularly advantageous for spin-orbit torque where the direction of these components depends on the unknown-in-advance orientation of the current-driven nonequilibrium spin density in the presence of spin-orbit coupling. We provide illustrative examples by computing spin-transfer torque in a one-dimensional toy model of a magnetic tunnel junction and realistic Co/Cu/Co spin-valve, both of which are described by first-principles Hamiltonians obtained from noncollinear density functional theory calculations; as well as spin-orbit torque in a ferromagnetic layer described by a tight-binding Hamiltonian which includes spin-orbit proximity effect within ferromagnetic monolayers assumed to be generated by the adjacent monolayer transition metal dichalcogenide.
• ### Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide(1804.09928)

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.
• ### Quantum phase transition in few-layer NbSe$_2$ probed through quantized conductance fluctuations(1801.04119)

Jan. 12, 2018 cond-mat.str-el
We present the first observation of dynamically modulated quantum phase transition (QPT) between two distinct charge density wave (CDW) phases in 2-dimensional 2H-NbSe$_2$. There is recent spectroscopic evidence for the presence of these two quantum phases, but its evidence in bulk measurements remained elusive. We studied suspended, ultra-thin \nbse devices fabricated on piezoelectric substrates - with tunable flakes thickness, disorder level and strain. We find a surprising evolution of the conductance fluctuation spectra across the CDW temperature: the conductance fluctuates between two precise values, separated by a quantum of conductance. These quantized fluctuations disappear for disordered and on-substrate devices. With the help of mean-field calculations, these observations can be explained as to arise from dynamical phase transition between the two CDW states. To affirm this idea, we vary the lateral strain across the device via piezoelectric medium and map out the phase diagram near the quantum critical point (QCP). The results resolve a long-standing mystery of the anomalously large spectroscopic gap in NbSe$_2$.
• ### Spin-memory loss due to spin-orbit coupling at ferromagnet/heavy-metal interfaces: Ab initio spin-density matrix approach(1708.07105)

Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic experiments. However, its strength extracted by fitting experimental data to phenomenological semiclassical theory, which replaces each interface by a fictitious bulk layer, is poorly understood from a microscopic quantum framework and/or materials properties. Here we describe ensemble of flowing spin quantum states using spin-density matrix, so that SML is measured like any decoherence process by the decay of its off-diagonal elements or, equivalently, by the reduction of the magnitude of polarization vector. By combining this framework with density functional theory (DFT) calculations, we examine how all three components of the polarization vector change at Co/Ta, Co/Pt, Co/Cu, Pt/Cu and Pt/Au interfaces embedded within Cu/FM/HM/Cu vertical heterostructures. In addition, we use ab initio Green's functions to compute spectral function and spin texture over FM, HM and NM monolayers around these interfaces which quantify interfacial spin-orbit coupling, thereby explaining the microscopic origin of SML in long-standing puzzles---such as why it is nonzero at Co/Cu interface; why it is very large at Pt/Cu interface; and why it occurs at perfect interfaces without any interfacial intermixing.
• ### Unusual Dirac fermions on the surface of noncentrosymmetric $\alpha$ - BiPd superconductor(1609.08947)

Combining multiple emergent correlated properties such as superconductivity and magnetism within the topological matrix can have exceptional consequences in garnering new and exotic physics. Here, we study the topological surface states from a noncentrosymmetric $\alpha$-BiPd superconductor by employing angle-resolved photoemission spectroscopy (ARPES) and first principle calculations. We observe that the Dirac surface states of this system have several interesting and unusual properties, compared to other topological surface states. The surface state is strongly anisotropic and the in-plane Fermi velocity varies rigorously on rotating the crystal about the $y$-axis. Moreover, it acquires an unusual band gap as a function of $k_y$, possibly due to hybridization with bulk bands, detected upon varying the excitation energy. Coexistence of all the functional properties, in addition to the unusual surface state characteristics make this an interesting material.
• ### Intrinsic large gap quantum anomalous Hall insulators in La$X$ ($X$=Br, Cl, I)(1608.06056)

We report a theoretical prediction of a new class of bulk and intrinsic quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via relativistic first-principle calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight binding model is developed to understand the origin of the QAH effect. Finally integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as $\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of La$X$ materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.
• ### Spin-valve Effect in NiFe/MoS2/NiFe Junctions(1502.06154)

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.
• ### Theory of Weyl orbital semimetals and predictions of several materials classes(1412.2607)

Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which possess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polarization and texture inversion between two electronic states at discrete momenta lend itself into protected Dirac or Weyl cones without spin-orbit coupling. We also predict several families of Weyl orbital semimetals including V$_3$S$_4$, NiTi3S6, BLi, and PbO$_2$ via first-principle band structure calculations. We find that the highest Fermi velocity predicted in some of these materials is even larger than that of the existing Dirac materials. The synthesis of Weyl orbital semimetals will not only expand the territory of Dirac materials beyond the quintessential spin-orbit coupled systems and hexagonal lattice to the entire periodic table, but it may also open up new possibilities for orbital controlled electronics or `orbitronics'.
• ### Superconducting dome in MoS2 and TiSe2 generated by quasiparticle-phonon coupling(1411.3096)

We use a first-principles based self-consistent momentum-resolved density fluctuation (MRDF) model to compute the combined effects of electron-electron and electron-phonon interactions to describe the superconducting dome in the correlated MoS2 thin flake and TiSe2. We find that without including the electron-electron interaction, the electron-phonon coupling and the superconducting transition temperature (Tc) are overestimated in both these materials. However, once the full angular and dynamical fluctuations of the spin and charge density induced quasiparticle self-energy effects are included, the electron-phonon coupling and Tc are reduced to the experimental value. With doping, both electronic correlation and electron-phonon coupling grows, and above some doping value, the former becomes so large that it starts to reduce the quasiparticle-phonon coupling constant and Tc, creating a superconducting dome, in agreement with experiments.
• ### Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous(1503.03647)

March 12, 2015 cond-mat.mtrl-sci
2D materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E_ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, E_c. Increasing E_ext beyond E_c can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semi-metal transition.
• ### Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions(1404.3517)

July 15, 2014 cond-mat.mes-hall
We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.
• ### Dimensionality driven charge density wave instability in TiS$_2$(1310.1866)

Density functional theory and density functional perturbation theory are used to investigate the electronic and vibrational properties of TiS$_2$. Within the local density approximation the material is a semi-metal both in the bulk and in the monolayer form. Most interestingly we observe a Kohn anomaly in the bulk phonon dispersion, which turns into a charge density wave instability when TiS$_2$ is thinned to less than four monolayers. Such charge density wave phase can be tuned by compressive strain, which appears to be the control parameter of the instability.
• ### Electric Field Effects on Armchair MoS2 Nanoribbons(1308.6229)

Aug. 28, 2013 cond-mat.mes-hall
{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS$_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states whose energy position determines the band-gap of the system. We show that, by applying an external transverse electric field, $E_\mathrm{ext}$, the nanoribbons band-gap can be significantly reduced, leading to a metal-insulator transition beyond a certain critical value. Moreover, the presence of a sufficiently high density of states at the Fermi level in the vicinity of the metal-insulator transition leads to the onset of Stoner ferromagnetism that can be modulated, and even extinguished, by $E_\mathrm{ext}$. In the case of bi-layer nanoribbons we further show that the band-gap can be changed from indirect to direct by applying a transverse field, an effect which might be of significance for opto-electronics applications.
• ### Ab-initio study on the possible doping strategies for MoS$_2$ monolayers(1304.8056)

April 30, 2013 cond-mat.mtrl-sci
Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS$_2$ conduction band, making the system n-type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species.
• ### Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate(1301.2491)

Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate the oxide plays an insignificant role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band-gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO2 are mainly determined by the detailed structure of the MoS2 /SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2 -based devices.