
What is so unique in TlCuCl$_3$ which drives so many unique magnetic
properties, such as a massive Higgs mode at the magnetic critical point,
longlived paramagnons, and dimerized antiferromagnetism? To study these
properties, we emply here a combination of {\it abinitio} band structure,
tightbinding parameterization, and an effective quantum field theory. Within a
densityfunctional theory (DFT) calculation, we find an unexpected bulk Dirac
cone without spinorbit coupling (SOC). Tracing back to its origin, we
identify, for the first time, the presence of a SuSchriefferHeeger (SSH) like
dimerized Cu chain lying in the 2D crystal structure. The SSH chain, combined
with SOC, stipulates an anisotropic 3D Dirac cone where chiral and helical
states are intertwined (namely, 3D SSH model). As a Heisenberg interaction is
introduced, we show that the dimerized Cu sublattices of the SSH chain
condensate into dimerized spinsinglet magnets. In the magnetic ground state,
we also find a naturally occurring topological phase, distinguished by the
axion invariant. Finally, to study how the topological axion excitation couples
to magnetic excilations, we derive a ChernSimonsGinzburgLandau action from
the 3D SSH Hamiltonian. We find that axion term provides an additional mass
term to the Higgs mode, and a lifetime to paramagnons, which are independent of
the quantum critical physics.

We review a unified approach for computing: (i) spintransfer torque in
magnetic trilayers like spinvalves and magnetic tunnel junction, where
injected charge current flows perpendicularly to interfaces; and (ii)
spinorbit torque in magnetic bilayers of the type
ferromagnet/spinorbitcoupledmaterial, where injected charge current flows
parallel to the interface. Our approach requires to construct the torque
operator for a given Hamiltonian of the device and the steadystate
nonequilibrium density matrix, where the latter is expressed in terms of the
nonequilibrium Green's functions and split into three contributions. Tracing
these contributions with the torque operator automatically yields fieldlike
and dampinglike components of spintransfer torque or spinorbit torque
vector, which is particularly advantageous for spinorbit torque where the
direction of these components depends on the unknowninadvance orientation of
the currentdriven nonequilibrium spin density in the presence of spinorbit
coupling. We provide illustrative examples by computing spintransfer torque in
a onedimensional toy model of a magnetic tunnel junction and realistic
Co/Cu/Co spinvalve, both of which are described by firstprinciples
Hamiltonians obtained from noncollinear density functional theory calculations;
as well as spinorbit torque in a ferromagnetic layer described by a
tightbinding Hamiltonian which includes spinorbit proximity effect within
ferromagnetic monolayers assumed to be generated by the adjacent monolayer
transition metal dichalcogenide.

The twodimensional (2D) semiconductor molybdenum disulfide (MoS2) has
attracted widespread attention for its extraordinary electrical, optical, spin
and valley related properties. Here, we report on spin polarized tunneling
through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room
temperature in a vertically fabricated spinvalve device. A tunnel
magnetoresistance (TMR) of 0.5  2 % has been observed, corresponding to spin
polarization of 5  10 % in the measured temperature range of 300  75 K. First
principles calculations for ideal junctions results in a tunnel
magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed
measurements at different temperatures and bias voltages, and density
functional theory calculations provide information about spin transport
mechanisms in vertical multilayer MoS2 spinvalve devices. These findings form
a platform for exploring spin functionalities in 2D semiconductors and
understanding the basic phenomenon that control their performance.

We present the first observation of dynamically modulated quantum phase
transition (QPT) between two distinct charge density wave (CDW) phases in
2dimensional 2HNbSe$_2$. There is recent spectroscopic evidence for the
presence of these two quantum phases, but its evidence in bulk measurements
remained elusive. We studied suspended, ultrathin \nbse devices fabricated on
piezoelectric substrates  with tunable flakes thickness, disorder level and
strain. We find a surprising evolution of the conductance fluctuation spectra
across the CDW temperature: the conductance fluctuates between two precise
values, separated by a quantum of conductance. These quantized fluctuations
disappear for disordered and onsubstrate devices. With the help of meanfield
calculations, these observations can be explained as to arise from dynamical
phase transition between the two CDW states. To affirm this idea, we vary the
lateral strain across the device via piezoelectric medium and map out the phase
diagram near the quantum critical point (QCP). The results resolve a
longstanding mystery of the anomalously large spectroscopic gap in NbSe$_2$.

Spinmemory loss (SML) of electrons traversing
ferromagneticmetal/heavymetal (FM/HM), FM/normalmetal (FM/NM) and HM/NM
interfaces is a fundamental phenomenon that must be invoked to explain
consistently large number of spintronic experiments. However, its strength
extracted by fitting experimental data to phenomenological semiclassical
theory, which replaces each interface by a fictitious bulk layer, is poorly
understood from a microscopic quantum framework and/or materials properties.
Here we describe ensemble of flowing spin quantum states using spindensity
matrix, so that SML is measured like any decoherence process by the decay of
its offdiagonal elements or, equivalently, by the reduction of the magnitude
of polarization vector. By combining this framework with density functional
theory (DFT) calculations, we examine how all three components of the
polarization vector change at Co/Ta, Co/Pt, Co/Cu, Pt/Cu and Pt/Au interfaces
embedded within Cu/FM/HM/Cu vertical heterostructures. In addition, we use ab
initio Green's functions to compute spectral function and spin texture over FM,
HM and NM monolayers around these interfaces which quantify interfacial
spinorbit coupling, thereby explaining the microscopic origin of SML in
longstanding puzzlessuch as why it is nonzero at Co/Cu interface; why it is
very large at Pt/Cu interface; and why it occurs at perfect interfaces without
any interfacial intermixing.

Combining multiple emergent correlated properties such as superconductivity
and magnetism within the topological matrix can have exceptional consequences
in garnering new and exotic physics. Here, we study the topological surface
states from a noncentrosymmetric $\alpha$BiPd superconductor by employing
angleresolved photoemission spectroscopy (ARPES) and first principle
calculations. We observe that the Dirac surface states of this system have
several interesting and unusual properties, compared to other topological
surface states. The surface state is strongly anisotropic and the inplane
Fermi velocity varies rigorously on rotating the crystal about the $y$axis.
Moreover, it acquires an unusual band gap as a function of $k_y$, possibly due
to hybridization with bulk bands, detected upon varying the excitation energy.
Coexistence of all the functional properties, in addition to the unusual
surface state characteristics make this an interesting material.

We report a theoretical prediction of a new class of bulk and intrinsic
quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via
relativistic firstprinciple calculations. We find that these systems are
innate longranged ferromagnets which, with the help of intrinsic spinorbit
coupling, become QAH insulators. A lowenergy multiband tight binding model is
developed to understand the origin of the QAH effect. Finally integer Chern
number is obtained via Berry phase computation for each twodimensional plane.
These materials have the added benefit of a sizable band gap of as large as
$\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strain
engineering. The synthesis of La$X$ materials will provide the impurityfree
single crystals and thinfilm QAH insulators for versatile experiments and
functionalities.

Twodimensional (2D) layered transition metal dichalcogenides (TMDs) have
been recently proposed as appealing candidate materials for spintronic
applications owing to their distinctive atomic crystal structure and exotic
physical properties arising from the large bonding anisotropy. Here we
introduce the first MoS2based spinvalves that employ monolayer MoS2 as the
nonmagnetic spacer. In contrast with what expected from the semiconducting
bandstructure of MoS2, the vertically sandwichedMoS2 layers exhibit metallic
behavior. This originates from their strong hybridization with the Ni and Fe
atoms of the Permalloy (Py) electrode. The spinvalve effect is observed up to
240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures.
The experimental work is accompanied by the first principle electron transport
calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our
results clearly identify TMDs as a promising spacer compound in magnetic tunnel
junctions and may open a new avenue for the TMDsbased spintronic applications.

Graphene, topological insulators, and Weyl semimetals are three widely
studied materials classes which possess Dirac or Weyl cones arising from either
sublattice symmetry or spinorbit coupling. In this work, we present a theory
of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals,
where the orbital polarization and texture inversion between two electronic
states at discrete momenta lend itself into protected Dirac or Weyl cones
without spinorbit coupling. We also predict several families of Weyl orbital
semimetals including V$_3$S$_4$, NiTi3S6, BLi, and PbO$_2$ via firstprinciple
band structure calculations. We find that the highest Fermi velocity predicted
in some of these materials is even larger than that of the existing Dirac
materials. The synthesis of Weyl orbital semimetals will not only expand the
territory of Dirac materials beyond the quintessential spinorbit coupled
systems and hexagonal lattice to the entire periodic table, but it may also
open up new possibilities for orbital controlled electronics or `orbitronics'.

We use a firstprinciples based selfconsistent momentumresolved density
fluctuation (MRDF) model to compute the combined effects of electronelectron
and electronphonon interactions to describe the superconducting dome in the
correlated MoS2 thin flake and TiSe2. We find that without including the
electronelectron interaction, the electronphonon coupling and the
superconducting transition temperature (Tc) are overestimated in both these
materials. However, once the full angular and dynamical fluctuations of the
spin and charge density induced quasiparticle selfenergy effects are included,
the electronphonon coupling and Tc are reduced to the experimental value. With
doping, both electronic correlation and electronphonon coupling grows, and
above some doping value, the former becomes so large that it starts to reduce
the quasiparticlephonon coupling constant and Tc, creating a superconducting
dome, in agreement with experiments.

2D materials are wellknown to exhibit interesting phenomena due to quantum
confinement. Here, we show that quantum confinement, together with structural
anisotropy, result in an electricfieldtunable Dirac cone in 2D black
phosphorus. Using density functional theory calculations, we find that an
electric field, E_ext, applied normal to a 2D black phosphorus thin film, can
reduce the direct band gap of fewlayer black phosphorus, resulting in an
insulatortometal transition at a critical field, E_c. Increasing E_ext beyond
E_c can induce a Dirac cone in the system, provided the black phosphorus film
is sufficiently thin. The electric field strength can tune the position of the
Dirac cone and the DiracFermi velocities, the latter being similar in
magnitude to that in graphene. We show that the Dirac cone arises from an
anisotropic interaction term between the frontier orbitals that are spatially
separated due to the applied field, on different halves of the 2D slab. When
this interaction term becomes vanishingly small for thicker films, the Dirac
cone can no longer be induced. Spinorbit coupling can gap out the Dirac cone
at certain electric fields; however, a further increase in field strength
reduces the spinorbitinduced gap, eventually resulting in a
topologicalinsulatortoDiracsemimetal transition.

We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of
\textit{abinitio} transport calculations. We show that junctions incorporating
either a mono or a bilayer of MoS$_2$ are metallic and that Fe acts as an
efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is
the result of the strong coupling between the Fe and S atoms at the interface.
For junctions of greater thickness a maximum magnetoresistance of $\sim$300\%
is obtained, which remains robust with the applied bias as long as transport is
in the tunneling limit. A general recipe for improving the magnetoresistance in
spin valves incorporating layered transition metal dichalcogenides is proposed.

Density functional theory and density functional perturbation theory are used
to investigate the electronic and vibrational properties of TiS$_2$. Within the
local density approximation the material is a semimetal both in the bulk and
in the monolayer form. Most interestingly we observe a Kohn anomaly in the bulk
phonon dispersion, which turns into a charge density wave instability when
TiS$_2$ is thinned to less than four monolayers. Such charge density wave phase
can be tuned by compressive strain, which appears to be the control parameter
of the instability.

{\it Ab initio} density functional theory calculations are performed to
investigate the electronic structure of MoS$_2$ armchair nanoribbons in the
presence of an external static electric field. Such nanoribbons, which are
nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states
whose energy position determines the bandgap of the system. We show that, by
applying an external transverse electric field, $E_\mathrm{ext}$, the
nanoribbons bandgap can be significantly reduced, leading to a metalinsulator
transition beyond a certain critical value. Moreover, the presence of a
sufficiently high density of states at the Fermi level in the vicinity of the
metalinsulator transition leads to the onset of Stoner ferromagnetism that can
be modulated, and even extinguished, by $E_\mathrm{ext}$. In the case of
bilayer nanoribbons we further show that the bandgap can be changed from
indirect to direct by applying a transverse field, an effect which might be of
significance for optoelectronics applications.

Density functional theory is used to systematically study the electronic and
magnetic properties of doped MoS$_2$ monolayers, where the dopants are
incorporated both via S/Mo substitution or as adsorbates. Among the possible
substitutional dopants at the Mo site, Nb is identified as suitable ptype
dopant, while Re is the donor with the lowest activation energy. When dopants
are simply adsorbed on a monolayer we find that alkali metals shift the Fermi
energy into the MoS$_2$ conduction band, making the system ntype. Finally, the
adsorption of charged molecules is considered, mimicking an ionic liquid
environment. We find that molecules adsorption can lead to both n and ptype
conductivity, depending on the charge polarity of the adsorbed species.

Abinitio density functional theory calculations are performed to study the
electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in
the presence of interface impurities and defects. When MoS2 is placed on a
defectfree substrate the oxide plays an insignificant role, since the
conduction band top and the valence band minimum of MoS2 are located
approximately in the middle of the SiO2 bandgap. However, if Na impurities and
O dangling bonds are introduced at the SiO2 surface, these lead to localized
states, which modulate the conductivity of the MoS2 monolayer from n to
ptype. Our results show that the conductive properties of MoS2 deposited on
SiO2 are mainly determined by the detailed structure of the MoS2 /SiO2
interface, and suggest that doping the substrate can represent a viable
strategy for engineering MoS2 based devices.