• We show Shubnikov-de Haas oscillations in topological insulator (Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$ films whose carrier type is p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, mobility, and the scattering time are significantly changed by tuning the Fermi-level position with the concentration x. The Landau-level fan diagram in the sample with x = 0.42 showed the $\pi$ Berry phase and its mobility was as high as 17,000 cm$^{2}$/V/s, whereas the others had the 2$\pi$ Berry phase and much lower mobility. This suggests that because the bulk band of the sample with x = 0.42 does not cross the Fermi level, it becomes bulk insulating, resulting in the topological surface-state dominating transport. Thus, we can switch sample properties from degenerate to bulk insulating by tuning the concentration x, which is consistent with results of angle-resolved photoemission spectroscopy.
  • Topological Dirac semimetals (TDSs) exhibit bulk Dirac cones protected by time reversal and crystal symmetry, as well as surface states originating from non-trivial topology. While there is a manifold possible onset of superconducting order in such systems, few observations of intrinsic superconductivity have so far been reported for TDSs. We observe evidence for a TDS phase in FeTe$_{1-x}$Se$_x$ ($x$ = 0.45), one of the high transition temperature ($T_c$) iron-based superconductors. In angle-resolved photoelectron spectroscopy (ARPES) and transport experiments, we find spin-polarized states overlapping with the bulk states on the (001) surface, and linear magnetoresistance (MR) starting from 6 T. Combined, this strongly suggests the existence of a TDS phase, which is confirmed by theoretical calculations. In total, the topological electronic states in Fe(Te,Se) provide a promising high $T_c$ platform to realize multiple topological superconducting phases.
  • Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future " topotronics" devices.
  • Conventional Rashba spin polarization is caused by the combination of strong spin-orbit interaction (SOI) and spatial inversion asymmetry. However, Rashba- and Dresselhaus-type spin-split states are predicted in LaOBiS$_2$ system by recent theory even though the crystal structure is centrosymmetric, which stem from the local inversion asymmetry of active BiS$_2$ layer. By performing high-resolution spin- and angle-resolved photoemission spectroscopy, we have investigated the electronic band structure and spin texture of superconductor LaO$_{0.55}$F$_{0.45}$BiS$_2$. Our studies present direct spectroscopic evidence for the local spin polarization in the vicinity of X point of both valence band and conduction band. Especially the coexistence of Rashba-like and Dresselhaus-like spin textures has been observed in the conduction band for the first time. The finding is of key importance for fabrication of proposed dual-gated spin-field effect transistor (SFET). Moreover, the spin-split band leads to a spin-momentum locking Fermi surface from which novel superconductivity emerges. Our demonstration not only expands the scope of spintronic materials but also enhances the understanding of SOI related superconductivity.
  • Topological insulators (TIs) are a new quantum state of matter. Their surfaces and interfaces act as a topological boundary to generate massless Dirac fermions with spin-helical textures. Investigation of fermion dynamics near the Dirac point is crucial for the future development of spintronic devices incorporating topological insulators. However, research so far has been unsatisfactory because of a substantial overlap with the bulk valence band and a lack of a completely unoccupied Dirac point (DP). Here, we explore the surface Dirac fermion dynamics in the TI Sb$_2$Te$_3$ by time- and angle-resolved photoemission spectroscopy (TrARPES). Sb$_2$Te$_3$ has a DP located completely above the Fermi energy ($E_F$) with an in-gap DP. The excited electrons in the upper Dirac cone stay longer than those below the Dirac point to form an inverted population. This was attributed to a reduced density of states (DOS) near the DP .