
We show Shubnikovde Haas oscillations in topological insulator
(Bi$_{x}$Sb$_{1x}$)$_{2}$Te$_{3}$ films whose carrier type is ptype (x =
0.29, 0.34) and ntype (x = 0.42). The physical properties such as the Berry
phase, mobility, and the scattering time are significantly changed by tuning
the Fermilevel position with the concentration x. The Landaulevel fan diagram
in the sample with x = 0.42 showed the $\pi$ Berry phase and its mobility was
as high as 17,000 cm$^{2}$/V/s, whereas the others had the 2$\pi$ Berry phase
and much lower mobility. This suggests that because the bulk band of the sample
with x = 0.42 does not cross the Fermi level, it becomes bulk insulating,
resulting in the topological surfacestate dominating transport. Thus, we can
switch sample properties from degenerate to bulk insulating by tuning the
concentration x, which is consistent with results of angleresolved
photoemission spectroscopy.

Topological Dirac semimetals (TDSs) exhibit bulk Dirac cones protected by
time reversal and crystal symmetry, as well as surface states originating from
nontrivial topology. While there is a manifold possible onset of
superconducting order in such systems, few observations of intrinsic
superconductivity have so far been reported for TDSs. We observe evidence for a
TDS phase in FeTe$_{1x}$Se$_x$ ($x$ = 0.45), one of the high transition
temperature ($T_c$) ironbased superconductors. In angleresolved photoelectron
spectroscopy (ARPES) and transport experiments, we find spinpolarized states
overlapping with the bulk states on the (001) surface, and linear
magnetoresistance (MR) starting from 6 T. Combined, this strongly suggests the
existence of a TDS phase, which is confirmed by theoretical calculations. In
total, the topological electronic states in Fe(Te,Se) provide a promising high
$T_c$ platform to realize multiple topological superconducting phases.

Inducing magnetism into topological insulators is intriguing for utilizing
exotic phenomena such as the quantum anomalous Hall effect (QAHE) for
technological applications. While most studies have focused on doping magnetic
impurities to open a gap at the surfacestate Dirac point, many undesirable
effects have been reported to appear in some cases that makes it difficult to
determine whether the gap opening is due to the timereversal symmetry breaking
or not. Furthermore, the realization of the QAHE has been limited to low
temperatures. Here we have succeeded in generating a massive Dirac cone in a
MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by selfassembling a
MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the codeposition of
Mn and Se. Our experimental results, supported by relativistic ab initio
calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure
shows ferromagnetism up to room temperature and a clear Diraccone gap opening
of ~100 meV without any other significant changes in the rest of the band
structure. It can be considered as a result of the direct interaction of the
surface Dirac cone and the magnetic layer rather than a magnetic proximity
effect. This spontaneously formed selfassembled heterostructure with a massive
Dirac spectrum, characterized by a nontrivial Chern number C = 1, has a
potential to realize the QAHE at significantly higher temperatures than
reported up to now and can serve as a platform for developing future "
topotronics" devices.

Conventional Rashba spin polarization is caused by the combination of strong
spinorbit interaction (SOI) and spatial inversion asymmetry. However, Rashba
and Dresselhaustype spinsplit states are predicted in LaOBiS$_2$ system by
recent theory even though the crystal structure is centrosymmetric, which stem
from the local inversion asymmetry of active BiS$_2$ layer. By performing
highresolution spin and angleresolved photoemission spectroscopy, we have
investigated the electronic band structure and spin texture of superconductor
LaO$_{0.55}$F$_{0.45}$BiS$_2$. Our studies present direct spectroscopic
evidence for the local spin polarization in the vicinity of X point of both
valence band and conduction band. Especially the coexistence of Rashbalike and
Dresselhauslike spin textures has been observed in the conduction band for the
first time. The finding is of key importance for fabrication of proposed
dualgated spinfield effect transistor (SFET). Moreover, the spinsplit band
leads to a spinmomentum locking Fermi surface from which novel
superconductivity emerges. Our demonstration not only expands the scope of
spintronic materials but also enhances the understanding of SOI related
superconductivity.

Topological insulators (TIs) are a new quantum state of matter. Their
surfaces and interfaces act as a topological boundary to generate massless
Dirac fermions with spinhelical textures. Investigation of fermion dynamics
near the Dirac point is crucial for the future development of spintronic
devices incorporating topological insulators. However, research so far has been
unsatisfactory because of a substantial overlap with the bulk valence band and
a lack of a completely unoccupied Dirac point (DP). Here, we explore the
surface Dirac fermion dynamics in the TI Sb$_2$Te$_3$ by time and
angleresolved photoemission spectroscopy (TrARPES). Sb$_2$Te$_3$ has a DP
located completely above the Fermi energy ($E_F$) with an ingap DP. The
excited electrons in the upper Dirac cone stay longer than those below the
Dirac point to form an inverted population. This was attributed to a reduced
density of states (DOS) near the DP .