During the shutdown of the CERN Large Hadron Collider in 2013-2014, an
additional pixel layer was installed between the existing Pixel detector of the
ATLAS experiment and a new, smaller radius beam pipe. The motivation for this
new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the
robustness and performance of the ATLAS tracking system, given the higher
instantaneous and integrated luminosities realised following the shutdown.
Because of the extreme radiation and collision rate environment, several new
radiation-tolerant sensor and electronic technologies were utilised for this
layer. This paper reports on the IBL construction and integration prior to its
operation in the ATLAS detector.
High Energy Particle Physics experiments at the LHC use hybrid silicon
detectors, in both pixel and strip geometry, for their inner trackers. These
detectors have proven to be very reliable and performant. Nevertheless, there
is great interest in the development of depleted CMOS silicon detectors, which
could achieve similar performances at lower cost of production and complexity.
We present recent developments of this technology in the framework of the ATLAS
CMOS demonstrator project. In particular, studies of two active sensors from
LFoundry, CCPD_LF and LFCPIX, and the first fully monolithic prototype MONOPIX
will be shown.
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage
and/or high resistivity add-ons of modern CMOS technologies to achieve
substantial depletion in the sensing volume, have proven to have high radiation
tolerance towards the requirements of ATLAS in the high-luminosity LHC era.
Depleted fully monolithic CMOS pixels with fast readout architectures are
currently being developed as promising candidates for the outer pixel layers of
the future ATLAS Inner Tracker, which will be installed during the phase II
upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs,
named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and
fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been
designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same
readout architecture, i.e. the column drain architecture, whereas different
sensor implementation concepts are pursued. The design of the two prototypes
will be described. First measurement results for LF-MonoPix will also be shown.
The recent R&D focus on CMOS sensors with charge collection in a depleted
zone has opened new perspectives for CMOS sensors as fast and radiation hard
pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have
already shown promising performance as feasible candidates for the ATLAS Inner
Tracker (ITk) upgrade, possibly replacing the current passive sensors. A
further step to exploit the potential of DMAPS is to investigate the
suitability of equipping the outer layers of the ATLAS ITk upgrade with fully
monolithic CMOS sensors. This paper presents the development of a depleted
monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology,
with the focus on design details and simulation results.
This work is on the Physics of the B Factories. Part A of this book contains
a brief description of the SLAC and KEK B Factories as well as their detectors,
BaBar and Belle, and data taking related issues. Part B discusses tools and
methods used by the experiments in order to obtain results. The results
themselves can be found in Part C.
Please note that version 3 on the archive is the auxiliary version of the
Physics of the B Factories book. This uses the notation alpha, beta, gamma for
the angles of the Unitarity Triangle. The nominal version uses the notation
phi_1, phi_2 and phi_3. Please cite this work as Eur. Phys. J. C74 (2014) 3026.
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS
Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented.
Measurements include charge collection, tracking efficiency and charge sharing
between pixel cells, as a function of track incident angle, and were performed
with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector
solenoid field. Sensors were bump bonded to the front-end chip currently used
in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating
through the entire wafer thickness and active edge, and double-sided 3D sensors
with partially overlapping bias and read-out electrodes were tested and showed
The readout chip for the CMS pixel detector has to deal with an enormous data
rate. On-chip zero suppression is inevitable and hit data must be buffered
locally during the latency of the first level trigger. Dead-time must be kept
at a minimum. It is dominated by contributions coming from the readout. To keep
it low an analog readout scheme has been adopted where pixel addresses are
analog coded. We present the architecture of the final CMS pixel detector
readout chip with special emphasis on the analog readout chain. Measurements of
its performance are discussed.