
The threedimensional topological semimetals represent a new quantum state of
matter. Distinct from the surface state in the topological insulators that
exhibits linear dispersion in twodimensional momentum plane, the
threedimensional semimetals host bulk band dispersions linearly along all
directions, forming discrete Dirac cones in threedimensional momentum space.
In addition to the gapless points (Weyl/Dirac nodes) in the bulk, the
threedimensional Weyl/Dirac semimetals are also characterized by
"topologically protected" surface state with Fermi arcs on their specific
surface. The Weyl/Dirac semimetals have attracted much attention recently they
provide a venue not only to explore unique quantum phenomena but also to show
potential applications. While Cd3As2 is proposed to be a viable candidate of a
Dirac semimetal, more experimental evidence and theoretical investigation are
necessary to pin down its nature. In particular, the topological surface state,
the hallmark of the threedimensional semimetal, has not been observed in
Cd3As2. Here we report the electronic structure of Cd3As2 investigated by
angleresolved photoemission measurements on the (112) crystal surface and
detailed band structure calculations. The measured Fermi surface and band
structure show a good agreement with the band structure calculations with two
bulk Diraclike bands approaching the Fermi level and forming Dirac points near
the Brillouin zone center. Moreover, the topological surface state with a
linear dispersion approaching the Fermi level is identified for the first time.
These results provide strong experimental evidence on the nature of
topologically nontrivial threedimensional Dirac cones in Cd3As2.

Bias voltage dependent scattering of the topological surface state is studied
by scanning tunneling microscopy/spectroscopy for a clean surface of the
topological insulator Bi$_2$Te$_2$Se. A strong warping of constant energy
contours in the unoccupied part of the spectrum is found to lead to a
spinselective scattering. The topological surface state persists to higher
energies in the unoccupied range far beyond the Dirac point, where it coexists
with the bulk conduction band. This finding sheds light on the spin and charge
dynamics over the wide energy range and opens a way to designing
optospintronic devices.

We studied the Agintercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by
scanning tunneling microscopy/spectroscopy and angleresolved photoemission
spectroscopy, combined with a first principles calculations. We demonstrate
that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated
between the quintuple layer (QL) units of the crystal, causing a expansion of
the van der Waals gaps and the detachment of topmost QLs from the bulk crystal.
This leads to a relocation (in the real space) of the the topological state
beneath the detached quintuple layers, accompanied by the emergence of
parabolic and "Mshaped" trivial bands localized above the relocated
topological states. These novel findings open a pathway to the engineering of
Dirac fermions shielded from the ambient contamination and may facilitate the
realization of faulttolerant quantum devices.

Quasiparticle interference induced by cobalt adatoms on the surface of the
topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling
microscopy, angleresolved photoemission spectroscopy and Xray magnetic
circular dichroism. It is found that Co atoms are selectively adsorbed on top
of Se sites and act as strong scatterers at the surface, generating anisotropic
standing waves. A longrange magnetic order is found to be absent, and the
surface state Dirac cone remains gapless. The anisotropy of the standing wave
is ascribed to the heavily warped isoenergy contour of unoccupied states,
where the scattering is allowed due to a nonzero outofplane spin.

We have performed scanning tunneling microscopy and differential tunneling
conductance ($dI/dV$) mapping for the surface of the three dimensional
topological insulator Bi$_{2}$Se$_{3}$. The fast Fourier transformation applied
to the $dI/dV$ image shows an electron interference pattern near Dirac node
despite the general belief that the backscattering is well suppressed in the
bulk energy gap region. The comparison of the present experimental result with
theoretical surface and bulk band structures shows that the electron
interference occurs through the scattering between the surface states near the
Dirac node and the bulk continuum states.

The electronic structures of the Heusler type compounds Fe$_{3x}V$_x$Si in
the concentration range between x = 0 and x = 1 have been probed by
photoemission spectroscopy (PES). The observed shift of Si 2p core level and
the main valence band structres indicate a chemical potential shift to higher
energy with increasing x. It is also clarified that the density of state at
Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states.
Besides the decrease of the spectral intensity near Fermi edge with increasing
x suggests the formation of pseudo gap at large x.

We have investigated the electronic structure of electrondoped
Sr$_{2x}$La$_x$FeMoO$_6$ ($x$=0.0 and 0.2) by photoemission spectroscopy and
bandstructure calculations within the localdensity approximation+$U$
(LDA+$U$) scheme. A characteristic doublepeak feature near the Fermi level
($E_{\rm F}$) has been observed in the valenceband photoemission spectra of
both $x$=0.0 and 0.2 samples.
A photonenergy dependence of the spectra in the Mo 4$d$ Cooper minimum
region compared with the bandstructure calculations has shown that the first
peak crossing $E_{\rm F}$ consists of the (Fe+Mo) $t_{2g\downarrow}$ states
(feature A) and the second peak well below $E_{\rm F}$ is dominated by the Fe
$e_{g\uparrow}$ states (feature B).
Upon La substitution, the feature A moves away from $E_{\rm F}$ by $\sim$50
meV which is smaller than the prediction of our band theory, 112 meV. In
addition, an intensity enhancement of $both$ A and B has been observed,
although B is not crossing $E_{\rm F}$. Those two facts are apparently
incompatible with the simple rigidband shift due to electron doping. We point
out that such phenomena can be understood in terms of the strong Hund's rule
energy stabilization in the 3$d^5$ configuration at the Fe sites in this
compound.
From an observed bandnarrowing, we have also deduced a mass enhancement of
$\sim$2.5 with respect to the band theory, in good agreement with a specific
heat measurement.