
We introduce a silicon metaloxidesemiconductor quantum dot architecture
based on a single polysilicon gate stack. The elementary structure consists of
two enhancement gates separated spatially by a gap, one gate forming a
reservoir and the other a quantum dot. We demonstrate, in three devices based
on two different versions of this elementary structure, that a wide range of
tunnel rates is attainable while maintaining singleelectron occupation. A
characteristic change in slope of the charge transitions as a function of the
reservoir gate voltage, attributed to screening from charges in the reservoir,
is observed in all devices, and is expected to play a role in the sizable
tuning orthogonality of the split enhancement gate structure. The allsilicon
process is expected to minimize strain gradients from electrode thermal
mismatch, while the single gate layer should avoid issues related to overlayers
(e.g., additional dielectric charge noise) and help improve yield. Finally,
reservoir gate control of the tunnel barrier has implications for
initialization, manipulation and readout schemes in multiquantum dot
architectures.

We demonstrate fast universal electrical spin manipulation with inhomogeneous
magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the
conventional regime of strong nuclearspin influence and observe a spinflip
fidelity > 96%, a distinct chevron Rabi pattern in the spectraltime domain,
and spin resonance linewidth limited by the Rabi frequency, not by the
dephasing rate. In addition, we establish fast zrotations up to 54 MHz by
directly controlling the spin phase. Our findings will significantly facilitate
tomography and error correction with electron spins in quantum dots.

Tunneling in a quantum coherent structure is not restricted to only nearest
neighbours. Hopping between distant sites is possible via the virtual
occupation of otherwise avoided intermediate states. Here we report the
observation of long range transitions in the transport through three quantum
dots coupled in series. A single electron is delocalized between the left and
right quantum dots while the centre one remains always empty. Superpositions
are formed and both charge and spin are exchanged between the outermost dots.
Detection of the process is achieved via the observation of narrow resonances,
insensitive to the transport Pauli spin blockade.

Spin qubits based on interacting spins in double quantum dots have been
successfully demonstrated. Readout of the qubit state involves a conversion of
spin to charge information, universally achieved by taking advantage of a spin
blockade phenomenon resulting from Pauli's exclusion principle. The archetypal
spin blockade transport signature in double quantum dots takes the form of a
rectified current. Currently more complex spin qubit circuits including triple
quantum dots are being developed. Here we show both experimentally and
theoretically (a) that in a linear triple quantum dot circuit, the spin
blockade becomes bipolar with current strongly suppressed in both bias
directions and (b) that a new quantum coherent mechanism becomes relevant.
Within this mechanism charge is transferred nonintuitively via coherent states
from one end of the linear triple dot circuit to the other without involving
the centre site. Our results have implications in future complex
nanospintronic circuits.

Spin qubits involving individual spins in single quantum dots or coupled
spins in double quantum dots have emerged as potential building blocks for
quantum information processing applications. It has been suggested that triple
quantum dots may provide additional tools and functionalities. These include
the encoding of information to either obtain protection from decoherence or to
permit allelectrical operation, efficient spin busing across a quantum
circuit, and to enable quantum error correction utilizing the threespin
GreenbergerHornZeilinger quantum state. Towards these goals we demonstrate
for the first time coherent manipulation between two interacting threespin
states. We employ the LandauZenerSt\"uckelberg approach for creating and
manipulating coherent superpositions of quantum states. We confirm that we are
able to maintain coherence when decreasing the exchange coupling of one spin
with another while simultaneously increasing its coupling with the third. Such
control of pairwise exchange is a requirement of most spin qubit architectures
but has not been previously demonstrated.

A crucial requirement for quantum information processing is the realization
of multiplequbit quantum gates. Here, we demonstrate an electron spin based
allelectrical twoqubit gate consisting of single spin rotations and interdot
spin exchange in a double quantum dot. A partially entangled output state is
obtained by the application of the twoqubit gate to an initial, uncorrelated
state. We find that the degree of entanglement is controllable by the exchange
operation time. The approach represents a key step towards the realization of
universal multiple qubit gates.

We measure a triple quantum dot in the regime where three addition lines,
corresponding to the addition of an electron to each of three dots, pass
through each other. In particular, we probe the interplay between transport and
the tridimensional nature of the stability diagram. We choose the regime most
pertinent for spin qubit applications. We find that at low bias transport
through the triple quantum dot circuit is only possible at six quadruple point
locations. The results are consistent with an equivalent circuit model.

The rapidly rising fields of spintronics and quantum information science have
led to a strong interest in developing the ability to coherently manipulate
electron spins. Electron spin resonance (ESR) is a powerful technique to
manipulate spins that is commonly achieved by applying an oscillating magnetic
field. However, the technique has proven very challenging when addressing
individual spins. In contrast, by mixing the spin and charge degrees of freedom
in a controlled way through engineered nonuniform magnetic fields, electron
spin can be manipulated electrically without the need of highfrequency
magnetic fields. Here we realize electricallydriven addressable spin rotations
on two individual electrons by integrating a micronsize ferromagnet to a
double quantum dot device. We find that the electrical control and spin
selectivity is enabled by the micromagnet's stray magnetic field which can be
tailored to multidots architecture. Our results demonstrate the feasibility of
manipulating electron spins electrically in a scalable way.

Charge detection utilizing a highly biased quantum point contact has become
the most effective probe for studying few electron quantum dot circuits.
Measurements on double and triple quantum dot circuits is performed to clarify
a back action role of charge sensing on the confined electrons. The quantum
point contact triggers inelastic transitions, which occur quite generally.
Under specific device and measurement conditions these transitions manifest
themselves as bounded regimes of telegraph noise within a stability diagram. A
nonequilibrium transition from artificial atomic to molecular behavior is
identified. Consequences for quantum information applications are discussed.

Magnetically coupling a nanomechanical resonator to a double quantum dot
confining two electrons can enable the manipulation of a single electron spin
and the readout of the resonator's natural frequency. When the Larmor frequency
matches the resonator frequency, the electron spin in one of the dots can be
selectively flipped by the magnetised resonator. By simultaneously measuring
the charge state of the twoelectron double quantum dots, this transition can
be detected thus enabling the natural frequency of the mechanical resonator to
be determined.

A lateral quantum dot design for coherent electrical manipulation of a
twolevel spincharge system is presented. Two micronsize permanent magnets
integrated to highfrequency electrodes produce a static slanting magnetic
field suitable for voltage controlled single qubit gate operations. Stray field
deviation from the slanting form is taken into account in the Hamiltonian
describing the twolevel system, which involves hybridization of a single
electron spin to the quantum dot's orbitals. Operation speed and gate fidelity
are related to device parameters. Sub 100 ns $\pi$ pulse duration can be
achieved with lattice fluctuations coherence time of 4 ms for GaAs.

We report charge detection studies of a lateral double quantum dot with
controllable charge states and tunable tunnel coupling. Using an integrated
electrometer, we characterize the equilibrium state of a single electron
trapped in the doubleddot (artificial H2+ molecule) by measuring the average
occupation of one dot. We present a model where the electrostatic coupling
between the molecule and the sensor is taken into account explicitly. From the
measurements, we extract the temperature of the isolated electron and the
tunnel coupling energy. It is found that this coupling can be tuned between 0
and 60 micro electronvolt in our device.

We have studied the origin of switching (telegraph) noise at low temperature
in lateral quantum structures defined electrostatically in GaAs/AlGaAs
heterostructures by surface gates. The noise was measured by monitoring the
conductance fluctuations around $e^2/h$ on the first step of a quantum point
contact at around 1.2 K. Cooling with a positive bias on the gates dramatically
reduces this noise, while an asymmetric bias exacerbates it. We propose a model
in which the noise originates from a leakage current of electrons that tunnel
through the Schottky barrier under the gate into the doped layer. The key to
reducing noise is to keep this barrier opaque under experimental conditions.
Bias cooling reduces the density of ionized donors, which builds in an
effective negative gate voltage. A smaller negative bias is therefore needed to
reach the desired operating point. This suppresses tunnelling from the gate and
hence the noise. The reduction in the density of ionized donors also
strengthens the barrier to tunneling at a given applied voltage. Support for
the model comes from our direct observation of the leakage current into a
closed quantum dot, around $10^{20} \mathrm{A}$ for this device. The current
was detected by a neighboring quantum point contact, which showed monotonic
steps in time associated with the tunneling of single electrons into the dot.
If asymmetric gate voltages are applied, our model suggests that the noise will
increase as a consequence of the more negative gate voltage applied to one of
the gates to maintain the same device conductance. We observe exactly this
behaviour in our experiments.

Novel hysteretic effects are reported in magnetotransport experiments on
lateral quantum devices. The effects are characterized by two vastly different
relaxation times (minutes and days). It is shown that the observed phenomena
are related to longlived eddy currents. This is confirmed by torsionbalance
magnetometry measurements of the same 2dimensional electron gas (2DEG)
material. These observations show that the induced quantum Hall potential at
the edges of the 2DEG reservoirs influences transport through the devices, and
have important consequences for the magnetotransport of all lateral quantum
devices.

We present Coulomb Blockade measurements of two fewelectron quantum dots in
series which are configured such that the electrochemical potential of one of
the two dots is aligned with spinselective leads. The charge transfer through
the system requires cotunneling through the second dot which is $not$ in
resonance with the leads. The observed amplitude modulation of the resulting
current is found to reflect spin blockade events occurring through either of
the two dots. We also confirm that charge redistribution events occurring in
the offresonance dot are detected indirectly via changes in the
electrochemical potential of the aligned dot.

Coulomb and spin blockade spectroscopy investigations have been performed on
an electrostatically defined ``artificial molecule'' connected to spin
polarized leads. The molecule is first effectively reduced to a twolevel
system by placing both constituent atoms at a specific location of the level
spectrum. The spin sensitivity of the conductance enables us to identify the
electronic spinstates of the twolevel molecule. We find in addition that the
magnetic field induces variations in the tunnel coupling between the two atoms.
The lateral nature of the device is evoked to explain this behavior.

Results of calculations and high sourcedrain transport measurements are
presented which demonstrate voltagetunable entanglement of electron pairs in
lateral quantum dots. At a fixed magnetic field, the application of a
judiciouslychosen gate voltage alters the groundstate of an electron pair
from an entagled spin singlet to a spin triplet.

We present experimental and theoretical results on a new regime in quantum
dots in which the filling factor 2 singlet state is replaced by new spin
polarized phases. We make use of spin blockade spectroscopy to identify the
transition to this new regime as a function of the number of electrons. The key
experimental observation is a reversal of the phase in the systematic
oscillation of the amplitude of Coulomb blockade peaks as the number of
electrons is increased above a critical number. It is found theoretically that
correlations are crucial to the existence of the new phases.

We demonstrate a tunable negative differential resistance controlled by spin
blockade in single electron transistors. The single electron transistors
containing a few electrons and spin polarized source and drain contacts were
formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade
measurements performed as a function of applied sourcedrain bias, electron
number and magnetic field reveal well defined regimes where a decrease in the
current is observed with increasing bias. We establish that the origin of the
negative differential regime is the spinpolarized detection of electrons
combined with a long spin relaxation time in the dot. These results indicate
new functionalities that may be utilized in nanospintronic devices in which
the spin state is electrostatically controlled via the electron occupation
number.

We calculate the spectral weight of the one and twodimensional Hubbard
models, by performing exact diagonalizations of finite clusters and treating
intercluster hopping with perturbation theory. Even with relatively modest
clusters (e.g. 12 sites), the spectra thus obtained give an accurate
description of the exact results. Thus, spincharge separation (i.e. an
extended spectral weight bounded by singularities) is clearly recognized in the
onedimensional Hubbard model, and so is extended spectral weight in the
twodimensional Hubbard model.