
In this article, we present an alternative method for simulating charge
transport in disordered organic materials by using a buffer lattice at the
boundary. This method does not require careful tracking of carrier's hopping
pattern across boundaries. Suitability of this method is established by
reproducing the field dependence of mobility, carrier relaxation and carrier
diffusion in disordered organic systems obtained by simulating the charge
transport for the full length of the systems along the field direction without
and boundary condition. The significance of the buffer lattice is emphasized by
simulating field dependence of mobility without using a buffer lattice, which
results in negative field dependence of mobiltiy (NFDM) at low field regime due
to the extra bias the carrier gains from the neglected hops and boundaries
along field direction.

Electronpositron pair production by means of vacuum polarization in the
presence of strong electromagnetic (EM) field of two counterpropagating laser
pulses is studied. A 3dimensional model of the focused laser pulses based on
the solution of the Maxwell's equations proposed by Narozhny and Fofanov is
used to find the structure of EM field of the circularly polarized
counterpropagating pulses. Analytical calculations show that the electric and
magnetic fields are almost parallel to each other in the focal region when
pulses are completely transverse either in electric (ewave) or magnetic
(hwave) field. On the other hand the electric and magnetic fields are almost
orthogonal when the counterpropagating pulses are made up of equal mixture of
e and h polarized waves. It is found that while the latter configuration of
the colliding pulses has much larger threshold for pair production it can
provide much shorter electron/positron pulses compared to the former case. The
dependence of pair production and its spatiotemporal distribution on
polarization of the laser pulses is analyzed using the structure of the EM
field.

Monte Carlo simulation was carried out to understand the influence of
morphological inhomogeneity on carrier diffusion in organic thin films. The
morphological inhomogeneity was considered in the simulation by incorporating
the regions of low energetic disorder in a host lattice of high energetic
disorder which decreases the overall energetic disorder of the system. For the
homogeneous films, the carrier diffusion was found to decrease upon decreasing
the energetic disorder. In contrast to this, in the case of inhomogeneous films
the carrier diffusion enhanced upon decreasing the overall energetic disorder,
up to an optimum value and beyond which the carrier diffusion decreased.
Through our simulation, we observed that the behavior of carrier diffusion in
the inhomogeneous case is due to the morphology dependent carrier spreading,
which acts in addition to the thermal and nonthermal field assisted diffusion
mechanisms. This morphological dependence of carrier spreading arises due to
the generation of packets of carriers with different jump rates, which is after
effect of slow relaxation of the carriers generated in the less disordered
regions of inhomogeneous system. Our simulation of morphology dependent carrier
spreading and its influence on the basic diffusion process provide deeper
insight into the charge transport mechanisms in organic thin films.

The influence of film morphology induced carrier diffusion on the broadening
of the timeofflight transient photocurrent pulse was investigated using
Monte Carlo simulation in organic thin films. Assuming the Gaussian Disorder
Model for the charge transport the simulation of the timeofflight
photocurrent pulse shape was carried out for homogeneous and inhomogeneous
films by varying the overall energetic disorder of the system. In the case of
homogeneous system, the value of the tail broadening parameter (W) of the
photocurrent pulse is found to decrease upon decreasing the energetic disorder.
The observed behavior is explained by using the temporal evolution of carrier
diffusion coefficient. In case of the inhomogeneous system, upon decreasing the
overall energetic disorder of the system the value of W initially attained a
maximum before it started to decrease. This is attributed to the morphology
dependent carrier diffusion in the latter case. This study elicits the
importance of the influence of the film morphology induced carrier diffusion on
the experimentally measured shape of the timeofflight transient photocurrent
pulses, which is found to be generally ignored.

We report electromagnetically induced transparency (EIT) in cold 85Rb atoms,
trapped in the lower hyperfine level F = 2, of the ground state 5$^{2}S_{1/2}$
(Tiwari V B \textit{et al} 2008 {\it Phys. Rev.} A {\bf 78} 063421). Two steady
state $\Lambda$type systems of hyperfine energy levels are investigated using
probe transitions into the levels F$^{\prime}$ = 2 and F$^{\prime}$ = 3 of the
excited state 5$^{2}P_{3/2}$ in the presence of coupling transitions F = 3
$\to$ F$^{\prime}$ = 2 and F = 3 $\to$ F$^{\prime}$ = 3, respectively. The
effects of uncoupled magnetic sublevel transitions and coupling field's Rabi
frequency on the EIT signal from these systems are studied using a simple
theoretical model.

A total negative field dependence of hole mobility down to low temperature
was observed in
N,N'diphenylN,N'bis(3methylphenyl)(1,1'biphenyl)4,4'diamine (TPD) doped
in Polystyrene. The observed field dependence of mobility is explained on the
basis of low values of energetic and positional disorder present in the sample.
The low value of disorder is attributed to different morphology of the sample
due to aggregation/crystallization of TPD. Monte Carlo simulations were also
performed to understand the influence of aggregates on charge transport in
disordered medium with correlated site energies. The simulation supports our
experimental observations and justification on the basis of low values of
disorder parameters.

The influence of ordered regions (micro crystallites and aggregates) in the
other wise disordered polymer host matrix on field and temperature dependence
of mobility (\mu) has been simulated. Increase in concentration of ordered
regions leads to increase in magnitude of mobility and in high field regime the
saturation of the mobility occurs at lower electric field strength. The
influence of different mean and standard deviation of Gaussian density of
states (DOS) of ordered regions on the field dependence of mobility was studied
and found to be significant only at higher concentrations. Weak influence of
these parameters at low concentrations are attributed to the strong interface
effects due to the difference in the standard deviation of DOS of two regions
(host and ordered region) and shallow trapping effect by ordered regions. For
all the parameters of ordered regions under investigation the temperature
dependence of mobility (log{\mu}) and the slope of log{\mu} Vs E^{1/2} plot
show 1/T^2 dependence.

We study the properties of the vortex state of a trapped Bose gas in the
largegasparameter regime. To test validity of the GrossPitaevskii theory in
this regime for the vortex states we compare the results of the
GrossPitaevskii and the modified GrossPitaevskii calculations for the total
energy, the chemical potential, the density profile and the frequency shift of
the quadrupole modes of the collective oscillations of the condensate. We find
that in the largegasparameter regime two calculations give substantially
different results for all the properties mentioned above

We study the synchronous dynamics of the Hopfield model when a random
antisymmetric part is added to the otherwise symmetric synaptic matrix. We use
a generating functional technique to derive analytical expressions for the
order parameters at the first time step ($t=1$) and the second time step
($t=2$). We find that the overlap between the target pattern and the state of
the network at $t=1$ is independent of the symmetry of the additional random
part of the synaptic interaction matrix. The result may have bearing on the
theories which use the results at $t=1$ to estimate quantities relevant to the
retrieval performance of the network. The symmetry of the synaptic interaction
matrix becomes effective from the second time step, explicitly through a
correlation function involving spin configurations at different times. This
suggests that the prediction of the long time behavior of the network from the
first few time steps may not be {\it always} correct. This was confirmed by the
numerical simulation which shows that the difference in the long time and the
short time behavior of the network becomes pronounced in presence of asymmetry
in the synaptic interaction matrix. It is also found in simulations that the
size of the basins of attraction of the stored patterns decreases with an
increase in the asymmetry. Moreover, the convergence time for the retrieval
increases. These results are contrary to the expectations from the earlier
studies based on the counting of fixed points. However, the convergence time
for the spurious fixed points increases faster than that for the retrieval
fixed points in the presence of asymmetry in the synapses. This is a positive
feature of the asymmetry so far as the retrieval performance of the network is
concerned.

We have used a meanfield Monte Carlo method to study the zerotemperature
synchronous dynamics of a onepattern model of associative memory with random
asymmetric couplings. In the case of symmetric couplings, we find evidence for
a transition from a spinglasslike phase to a ferromagnetlike phase as the
acquisition strength of the stored pattern is increased from zero. In the
ferromagnetic phase, we find the existence of two types of phasespace
structure for $m > 0$ where $m$ is the overlap of the state of the system with
the stored pattern: a simple phasespace structure where all initial states
with $m > 0$ flow to the attractor corresponding to the stored pattern; and a
complex phasespace structure with many attractors with their basins of
attraction. The presence of random asymmetry in the couplings results in better
retrieval performance of the network by enhancing the size of the basin of
attraction of the stored pattern and by making the recall of memory
significantly faster.

We study the effect of going beyond the GrossPitaevskii theory on the
frequencies of collective oscillations of a trapped Bose gas in the large gas
parameter regime. We go beyond the GrossPitaevskii regime by including a
higherorder term in the interatomic correlation energy. To calculate the
frequencies we employ the sumrule approach of manybody response theory
coupled with a variational method for the determination of groundstate
properties. We show that going beyond the GrossPitaevskii approximation
introduces significant corrections to the collective frequencies of the
compressional mode.

We study the groundstate properties of dilute Bose gas confined to both
isotropic and anisotropic traps to assess the accuracy of GrossPitaevskii (GP)
theory. To go beyond GP approximation we use HuangYang theory of interatomic
interaction energy for hardsphere Bose gas and use a variational method to
solve the resulting modified GP equation. We also make an analytic estimate of
the corrections due to higherorder terms in the interatomic interaction
energy. We find that the corrections are of the order of 1 percent. However,
there is a qualitative change in the density profile due to presence of
logarithimic term in the interaction energy for large N (number of atoms)

We propose a simple variational form of the wave function to describe the
ground state and vortex states of a system of weakly interacting Bose gas in an
anisotropic trap. The proposed wave function is valid for a wide range of the
particle numbers in the trap. It also works well in the case of attractive
interaction between the atoms. Further, it provides an easy and fast method to
calculate the physical quantities of interest. The results compare very well
with those obtained by purely numerical techniques. Using our wave function we
have been able to verify, for the first time, the predicted behaviour of aspect
ratio.