In this article, we present an alternative method for simulating charge transport in disordered organic materials by using a buffer lattice at the boundary. This method does not require careful tracking of carrier's hopping pattern across boundaries. Suitability of this method is established by reproducing the field dependence of mobility, carrier relaxation and carrier diffusion in disordered organic systems obtained by simulating the charge transport for the full length of the systems along the field direction without and boundary condition. The significance of the buffer lattice is emphasized by simulating field dependence of mobility without using a buffer lattice, which results in negative field dependence of mobiltiy (NFDM) at low field regime due to the extra bias the carrier gains from the neglected hops and boundaries along field direction.

Electron-positron pair production by means of vacuum polarization in the presence of strong electromagnetic (EM) field of two counterpropagating laser pulses is studied. A 3-dimensional model of the focused laser pulses based on the solution of the Maxwell's equations proposed by Narozhny and Fofanov is used to find the structure of EM field of the circularly polarized counterpropagating pulses. Analytical calculations show that the electric and magnetic fields are almost parallel to each other in the focal region when pulses are completely transverse either in electric (e-wave) or magnetic (h-wave) field. On the other hand the electric and magnetic fields are almost orthogonal when the counterpropagating pulses are made up of equal mixture of e- and h- polarized waves. It is found that while the latter configuration of the colliding pulses has much larger threshold for pair production it can provide much shorter electron/positron pulses compared to the former case. The dependence of pair production and its spatiotemporal distribution on polarization of the laser pulses is analyzed using the structure of the EM field.

Monte Carlo simulation was carried out to understand the influence of morphological inhomogeneity on carrier diffusion in organic thin films. The morphological inhomogeneity was considered in the simulation by incorporating the regions of low energetic disorder in a host lattice of high energetic disorder which decreases the overall energetic disorder of the system. For the homogeneous films, the carrier diffusion was found to decrease upon decreasing the energetic disorder. In contrast to this, in the case of inhomogeneous films the carrier diffusion enhanced upon decreasing the overall energetic disorder, up to an optimum value and beyond which the carrier diffusion decreased. Through our simulation, we observed that the behavior of carrier diffusion in the inhomogeneous case is due to the morphology dependent carrier spreading, which acts in addition to the thermal and non-thermal field assisted diffusion mechanisms. This morphological dependence of carrier spreading arises due to the generation of packets of carriers with different jump rates, which is after effect of slow relaxation of the carriers generated in the less disordered regions of inhomogeneous system. Our simulation of morphology dependent carrier spreading and its influence on the basic diffusion process provide deeper insight into the charge transport mechanisms in organic thin films.

The influence of film morphology induced carrier diffusion on the broadening of the time-of-flight transient photo-current pulse was investigated using Monte Carlo simulation in organic thin films. Assuming the Gaussian Disorder Model for the charge transport the simulation of the time-of-flight photo-current pulse shape was carried out for homogeneous and inhomogeneous films by varying the overall energetic disorder of the system. In the case of homogeneous system, the value of the tail broadening parameter (W) of the photocurrent pulse is found to decrease upon decreasing the energetic disorder. The observed behavior is explained by using the temporal evolution of carrier diffusion coefficient. In case of the inhomogeneous system, upon decreasing the overall energetic disorder of the system the value of W initially attained a maximum before it started to decrease. This is attributed to the morphology dependent carrier diffusion in the latter case. This study elicits the importance of the influence of the film morphology induced carrier diffusion on the experimentally measured shape of the time-of-flight transient photo-current pulses, which is found to be generally ignored.

We report electromagnetically induced transparency (EIT) in cold 85Rb atoms, trapped in the lower hyperfine level F = 2, of the ground state 5$^{2}S_{1/2}$ (Tiwari V B \textit{et al} 2008 {\it Phys. Rev.} A {\bf 78} 063421). Two steady state $\Lambda$-type systems of hyperfine energy levels are investigated using probe transitions into the levels F$^{\prime}$ = 2 and F$^{\prime}$ = 3 of the excited state 5$^{2}P_{3/2}$ in the presence of coupling transitions F = 3 $\to$ F$^{\prime}$ = 2 and F = 3 $\to$ F$^{\prime}$ = 3, respectively. The effects of uncoupled magnetic sublevel transitions and coupling field's Rabi frequency on the EIT signal from these systems are studied using a simple theoretical model.

A total negative field dependence of hole mobility down to low temperature was observed in N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'diamine (TPD) doped in Polystyrene. The observed field dependence of mobility is explained on the basis of low values of energetic and positional disorder present in the sample. The low value of disorder is attributed to different morphology of the sample due to aggregation/crystallization of TPD. Monte Carlo simulations were also performed to understand the influence of aggregates on charge transport in disordered medium with correlated site energies. The simulation supports our experimental observations and justification on the basis of low values of disorder parameters.

The influence of ordered regions (micro crystallites and aggregates) in the other wise disordered polymer host matrix on field and temperature dependence of mobility (\mu) has been simulated. Increase in concentration of ordered regions leads to increase in magnitude of mobility and in high field regime the saturation of the mobility occurs at lower electric field strength. The influence of different mean and standard deviation of Gaussian density of states (DOS) of ordered regions on the field dependence of mobility was studied and found to be significant only at higher concentrations. Weak influence of these parameters at low concentrations are attributed to the strong interface effects due to the difference in the standard deviation of DOS of two regions (host and ordered region) and shallow trapping effect by ordered regions. For all the parameters of ordered regions under investigation the temperature dependence of mobility (log{\mu}) and the slope of log{\mu} Vs E^{1/2} plot show 1/T^2 dependence.

We study the properties of the vortex state of a trapped Bose gas in the large-gas-parameter regime. To test validity of the Gross-Pitaevskii theory in this regime for the vortex states we compare the results of the Gross-Pitaevskii and the modified Gross-Pitaevskii calculations for the total energy, the chemical potential, the density profile and the frequency shift of the quadrupole modes of the collective oscillations of the condensate. We find that in the large-gas-parameter regime two calculations give substantially different results for all the properties mentioned above

We study the synchronous dynamics of the Hopfield model when a random antisymmetric part is added to the otherwise symmetric synaptic matrix. We use a generating functional technique to derive analytical expressions for the order parameters at the first time step ($t=1$) and the second time step ($t=2$). We find that the overlap between the target pattern and the state of the network at $t=1$ is independent of the symmetry of the additional random part of the synaptic interaction matrix. The result may have bearing on the theories which use the results at $t=1$ to estimate quantities relevant to the retrieval performance of the network. The symmetry of the synaptic interaction matrix becomes effective from the second time step, explicitly through a correlation function involving spin configurations at different times. This suggests that the prediction of the long time behavior of the network from the first few time steps may not be {\it always} correct. This was confirmed by the numerical simulation which shows that the difference in the long time and the short time behavior of the network becomes pronounced in presence of asymmetry in the synaptic interaction matrix. It is also found in simulations that the size of the basins of attraction of the stored patterns decreases with an increase in the asymmetry. Moreover, the convergence time for the retrieval increases. These results are contrary to the expectations from the earlier studies based on the counting of fixed points. However, the convergence time for the spurious fixed points increases faster than that for the retrieval fixed points in the presence of asymmetry in the synapses. This is a positive feature of the asymmetry so far as the retrieval performance of the network is concerned.

We have used a mean-field Monte Carlo method to study the zero-temperature synchronous dynamics of a one-pattern model of associative memory with random asymmetric couplings. In the case of symmetric couplings, we find evidence for a transition from a spin-glass-like phase to a ferromagnet-like phase as the acquisition strength of the stored pattern is increased from zero. In the ferromagnetic phase, we find the existence of two types of phase-space structure for $m > 0$ where $m$ is the overlap of the state of the system with the stored pattern: a simple phase-space structure where all initial states with $m > 0$ flow to the attractor corresponding to the stored pattern; and a complex phase-space structure with many attractors with their basins of attraction. The presence of random asymmetry in the couplings results in better retrieval performance of the network by enhancing the size of the basin of attraction of the stored pattern and by making the recall of memory significantly faster.

We study the effect of going beyond the Gross-Pitaevskii theory on the frequencies of collective oscillations of a trapped Bose gas in the large gas parameter regime. We go beyond the Gross-Pitaevskii regime by including a higher-order term in the interatomic correlation energy. To calculate the frequencies we employ the sum-rule approach of many-body response theory coupled with a variational method for the determination of ground-state properties. We show that going beyond the Gross-Pitaevskii approximation introduces significant corrections to the collective frequencies of the compressional mode.

We study the ground-state properties of dilute Bose gas confined to both isotropic and anisotropic traps to assess the accuracy of Gross-Pitaevskii (GP) theory. To go beyond GP approximation we use Huang-Yang theory of interatomic interaction energy for hard-sphere Bose gas and use a variational method to solve the resulting modified GP equation. We also make an analytic estimate of the corrections due to higher-order terms in the interatomic interaction energy. We find that the corrections are of the order of 1 percent. However, there is a qualitative change in the density profile due to presence of logarithimic term in the interaction energy for large N (number of atoms)

We propose a simple variational form of the wave function to describe the ground state and vortex states of a system of weakly interacting Bose gas in an anisotropic trap. The proposed wave function is valid for a wide range of the particle numbers in the trap. It also works well in the case of attractive interaction between the atoms. Further, it provides an easy and fast method to calculate the physical quantities of interest. The results compare very well with those obtained by purely numerical techniques. Using our wave function we have been able to verify, for the first time, the predicted behaviour of aspect ratio.