
The atom sets an ultimate scaling limit to Moores law in the electronics
industry. And while electronics research already explores atomic scales
devices, photonics research still deals with devices at the micrometer scale.
Here we demonstrate that photonic scalingsimilar to electronicsis only
limited by the atom. More precisely, we introduce an electrically controlled
single atom plasmonic switch. The switch allows for fast and reproducible
switching by means of the relocation of an individual or at most  a few atoms
in a plasmonic cavity. Depending on the location of the atom either of two
distinct plasmonic cavity resonance states are supported. Experimental results
show reversible digital optical switching with an extinction ration of 10 dB
and operation at room temperature with femtojoule (fJ) power consumption for a
single switch operation. This demonstration of a CMOS compatible, integrated
quantum device allowing to control photons at the singleatom level opens
intriguing perspectives for a fully integrated and highly scalable chip
platform  a platform where optics, electronics and memory may be controlled
at the singleatom level.

In this paper we use an abinitio quantum transport approach to study the
electron current flowing through lithiated SnO anodes for potential
applications in Liion batteries. By investigating a set of lithiated
structures with varying lithium concentrations, it is revealed that LixSnO can
be a good conductor, with values comparable to bulk $\beta$Sn and Li. A deeper
insight into the current distribution indicates that electrons preferably
follow specific trajectories, which offer superior conducting properties than
others. These channels have been identified and it is shown here how they can
enhance or deteriorate the current flow in lithiated anode materials.

Light emission from quantum tunneling has challenged researchers for more
than four decades due to the intricate interplay of electrical and optical
properties in nanoscopic volumes. Here we disentangle electronics and photonics
by studying the interactions between electromagnetic modes and tunneling
electrons in Van der Waals quantum tunneling (VdWQT) devices, which allow for
the independent control over optical and electronic properties. Tunneling in
these devices, consisting of vertical stacks of gold, hexagonal boron nitride
and graphene, is found to either occur elastically, conserving the electrons
energy, or inelastically accompanied by energy loss to phononic or photonic
excitations. We unambiguously demonstrate that the emitted light originates
from the direct emission of photons by inelastic electron tunneling, described
as a spontaneous emission process, rather than hot electron luminescence.
Additionally, we achieve spectral shaping and local, resonant enhancement of
the photon emission rate by four orders of magnitude by integrating VdWQT
devices with optical nanocube antennas.

Over the past thirty years, it has been consistently observed that surface
engineering of colloidal nanocrystals (NC) is key to their performance
parameters. In the case of lead chalcogenide NCs, for example, replacing thiols
with halide anion surface termination has been shown to increase power
conversion efficiency in NCbased solar cells. To gain insight into the origins
of these improvements, we perform ab initio molecular dynamics (AIMD) on
experimentallyrelevant sized lead sulfide (PbS) NCs constructed with thiol or
Cl, Br, and I anion surfaces. The surface of both the thiol and
halideterminated NCs exhibit low and highenergy phonon modes with large
thermal displacements not present in bulk PbS; however, halide anion surface
termination reduces the overlap of the electronic wavefunctions with these
vibration modes. These findings suggest that electronphonon interactions will
be reduced in the halide terminated NCs, a conclusion that is supported by
analyzing the timedependent evolution of the electronic energies and
wavefunctions extracted from the AIMD. This work explains why electronphonon
interactions are crucial to charge carrier dynamics in NCs and how surface
engineering can be applied to systematically control their electronic and
phononic properties. Furthermore, we propose that the computationally efficient
approach of gauging electronphonon interaction implemented here can be used to
guide the design of applicationspecific surface terminations for arbitrary
nanomaterials.

An atomistic study of the ordereffect occurring in Li$_{x}$CoO$_{2}$ at
$x=0.5$ is presented and an explanation for the computationally and
experimentally observed dip in the Li diffusivity is proposed. Configurations
where a single halffilled Li layer arranged in either a linear or a zigzag
pattern are simulated. It is found that the lowest energy phase is the zigzag
pattern rather than the linear arrangement that currently is considered to be
of lowest energy. Atomic interactions are modeled at the DFT level of accuracy
and energy barriers for Liion diffusion are determined from searches for first
order saddle points on the resulting potential energy surface. The determined
saddle points reveal that the barriers for diffusion parallel and perpendicular
to the zigzag phase differ significantly and explain the observed dip in
diffusivity.

Using firstprinciples calculations, we show that the conduction and valence
band energies and their deformation potentials exhibit a nonnegligible
compositional bowing in strained ternary semiconductor alloys such as InGaAs.
The electronic structure of these compounds has been calculated within the
framework of local density approximation and hybrid functional approach for
large cubic supercells and special quasirandom structures, which represent two
kinds of model structures for random alloys. We find that the predicted bowing
effect for the band energy deformation potentials is rather insensitive to the
choice of the functional and alloy structural model. The direction of bowing is
determined by In cations that give a stronger contribution to the formation of
the In$_{x}$Ga$_{1x}$As valence band states with $x\gtrsim 0.5$, compared to
Ga cations.

A high reversible capacity is a key feature for any rechargeable battery. In
the lithiumion battery technology, tinoxide anodes do fulfill this
requirement, but a fast loss of capacity hinders a full commercialization.
Using firstprinciples calculations, we propose a microscopic model that sheds
light on the reversible lithiation/delithiation of SnO and reveals that a
sintering of Sn causes a strong degradation of SnObased anodes. When the
initial irreversible transformation ends, active anode grains consist of
Lioxide layers separated by Sn bilayers. During the following reversible
lithiation, the Lioxide undergoes two phase transformations that give rise to
a Lienrichment of the oxide and the formation of a layered SnLi composite. We
find that the modelpredicted anode volume expansion and voltage profile agree
well with experiment, and a layered anode grain is highlyconductive and has a
theoretical reversible capacity of 4.5 Li atoms per a SnO host unit. The model
suggests that the grain structure has to remain layered to sustain its
reversible capacity and a thinfilm design of battery anodes could be a remedy
for the capacity loss.

We suggest that the lithiation of pristine SnO forms a layered Li$_\text{X}$O
structure while the expelled tin atoms agglomerate into 'surface' planes
separating the Li$_\text{X}$O layers. The proposed lithiation model widely
differs from the common assumption that tin segregates into nanoclusters
embedded in the lithia matrix. With this model we are able to account for the
various tin bonds that are seen experimentally and explain the three volume
expansion phases that occur when SnO undergoes lithiation: (i) at low
concentrations Li behaves as an intercalated species inducing small volume
increases; (ii) for intermediate concentrations SnO transforms into lithia
causing a large expansion; (iii) finally, as the Li concentration further
increases a saturation of the lithia takes place until a layered Li$_2$O is
formed. A moderate volume expansion results from this last process. We also
report a 'zipper' nucleation mechanism that could provide the seed for the
transformation from tin oxide to lithium oxide.

In general, there are two major factors affecting bandgaps in nanostructures:
(i) the enhanced electronelectron interactions due to confinement and (ii) the
modified selfenergy of electrons due to the dielectric screening. While recent
theoretical studies on graphene nanoribbons (GNRs) report on the first effect,
the effect of dielectric screening from the surrounding materials such as
substrates has not been thoroughly investigated. Using largescale electronic
structure calculations based on the GW approach, we show that when GNRs are
deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV)
even though the GNRsubstrate interaction is weak.

The effects of an atomistic interface roughness in ntype silicon nanowire
transistors (SiNWT) on the radio frequency performance are analyzed. Interface
roughness scattering (IRS) is statistically investigated through a three
dimensional fullband quantum transport simulation based on the sp3d5s?*
tightbinding model. As the diameter of the SiNWT is scaled down below 3 nm,
IRS causes a significant reduction of the cutoff frequency. The fluctuations
of the conduction band edge due to the rough surface lead to a reflection of
electrons through modemismatch. This effect reduces the velocity of electrons
and hence the transconductance considerably causing a cutoff frequency
reduction.

The effect of geometrical confinement, atomic position and orientation of
Silicon nanowires (SiNWs) on their thermal properties are investigated using
the phonon dispersion obtained using a Modified Valence Force Field (MVFF)
model. The specific heat ($C_{v}$) and the ballistic thermal conductance
($\kappa^{bal}_{l}$) shows anisotropic variation with changing crosssection
shape and size of the SiNWs. The $C_{v}$ increases with decreasing
crosssection size for all the wires. The triangular wires show the largest
$C_{v}$ due to their highest surfacetovolume ratio. The square wires with
[110] orientation show the maximum $\kappa^{bal}_{l}$ since they have the
highest number of conducting phonon modes. At the nanoscale a universal
scaling law for both $C_{v}$ and $\kappa^{bal}_{l}$ are obtained with respect
to the number of atoms in the unit cell. This scaling is independent of the
shape, size and orientation of the SiNWs revealing a direct correlation of the
lattice thermal properties to the atomistic properties of the nanowires. Thus,
engineering the SiNW crosssection shape, size and orientation open up new ways
of tuning the thermal properties at the nanometer regime.

Engineering of the crosssection shape and size of ultrascaled Si nanowires
(SiNWs) provides an attractive way for tuning their structural properties. The
acoustic and optical phonon shifts of the freestanding circular, hexagonal,
square and triangular SiNWs are calculated using a Modified Valence Force Field
(MVFF) model. The acoustic phonon blue shift (acoustic hardening) and the
optical phonon red shift (optical softening) show a strong dependence on the
crosssection shape and size of the SiNWs. The triangular SiNWs have the least
structural symmetry as revealed by the splitting of the degenerate flexural
phonon modes and The show the minimum acoustic hardening and the maximum
optical hardening. The acoustic hardening, in all SiNWs, is attributed to the
decreasing difference in the vibrational energy distribution between the inner
and the surface atoms with decreasing crosssection size. The optical softening
is attributed to the reduced phonon group velocity and the localization of the
vibrational energy density on the inner atoms. While the acoustic phonon shift
shows a strong wire orientation dependence, the optical phonon softening is
independent of wire orientation.

Through the NonEquilibrium Green's Function (NEGF) formalism, quantumscale
device simulation can be performed with the inclusion of electronphonon
scattering. However, the simulation of realistically sized devices under the
NEGF formalism typically requires prohibitive amounts of memory and computation
time. Two of the most demanding computational problems for NEGF simulation
involve mathematical operations with structured matrices called semiseparable
matrices. In this work, we present parallel approaches for these computational
problems which allow for efficient distribution of both memory and computation
based upon the underlying device structure. This is critical when simulating
realistically sized devices due to the aforementioned computational burdens.
First, we consider determining a distributed compact representation for the
retarded Green's function matrix $G^{R}$. This compact representation is exact
and allows for any entry in the matrix to be generated through the inherent
semiseparable structure. The second parallel operation allows for the
computation of electron density and current characteristics for the device.
Specifically, matrix products between the distributed representation for the
semiseparable matrix $G^{R}$ and the selfenergy scattering terms in
$\Sigma^{<}$ produce the lessthan Green's function $G^{<}$. As an illustration
of the computational efficiency of our approach, we stably generate the
mobility for nanowires with crosssectional sizes of up to 4.5nm, assuming an
atomistic model with scattering.

Accurate modeling of the pibands of armchair graphene nanoribbons (AGNRs)
requires correctly reproducing asymmetries in the bulk graphene bands as well
as providing a realistic model for hydrogen passivation of the edge atoms. The
commonly used singlepz orbital approach fails on both these counts. To
overcome these failures we introduce a nearestneighbor, three orbital per atom
p/d tightbinding model for graphene. The parameters of the model are fit to
firstprinciples densityfunctional theory (DFT)  based calculations as well
as to those based on the manybody Green's function and screenedexchange (GW)
formalism, giving excellent agreement with the ab initio AGNR bands. We employ
this model to calculate the currentvoltage characteristics of an AGNR MOSFET
and the conductance of roughedge AGNRs, finding significant differences versus
the singlepz model. These results show that an accurate bandstructure model is
essential for predicting the performance of graphenebased nanodevices.

The influence of interface roughness scattering (IRS) on the performances of
silicon nanowire fieldeffect transistors (NWFETs) is numerically investigated
using a full 3D quantum transport simulator based on the atomistic sp3d5s*
tightbinding model. The interface between the silicon and the silicon dioxide
layers is generated in a realspace atomistic representation using an
experimentally derived autocovariance function (ACVF). The oxide layer is
modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms.
<110>oriented nanowires with different diameters and randomly generated
surface configurations are studied. The experimentally observed ONcurrent and
the threshold voltage is quantitatively captured by the simulation model. The
mobility reduction due to IRS is studied through a qualitative comparison of
the simulation results with the experimental results.

A simulation methodology for ultrascaled InAs quantum well field effect
transistors (QWFETs) is presented and used to provide design guidelines and a
path to improve device performance. A multiscale modeling approach is adopted,
where strain is computed in an atomistic valenceforcefield method, an
atomistic sp3d5s* tightbinding model is used to compute channel effective
masses, and a 2D realspace effective mass based ballistic quantum transport
model is employed to simulate three terminal currentvoltage characteristics
including gate leakage. The simulation methodology is first benchmarked against
experimental IV data obtained from devices with gate lengths ranging from 30
to 50 nm. A good quantitative match is obtained. The calibrated simulation
methodology is subsequently applied to optimize the design of a 20 nm gate
length device. Two critical parameters have been identified to control the gate
leakage magnitude of the QWFETs, (i) the geometry of the gate contact (curved
or square) and (ii) the gate metal work function. In addition to pushing the
threshold voltage towards an enhancement mode operation, a higher gate metal
work function can help suppress the gate leakage and allow for much aggressive
insulator scaling.

he correct estimation of thermal properties of ultrascaled CMOS and
thermoelectric semiconductor devices demands for accurate phonon modeling in
such structures. This work provides a detailed description of the modified
valence force field (MVFF) method to obtain the phonon dispersion in
zincblende semiconductors. The model is extended from bulk to nanowires after
incorporating proper boundary conditions. The computational demands by the
phonon calculation increase rapidly as the wire crosssection size increases.
It is shown that the nanowire phonon spectrum differ considerably from the bulk
dispersions. This manifests itself in the form of different physical and
thermal properties in these wires. We believe that this model and approach will
prove beneficial in the understanding of the lattice dynamics in the next
generation ultrascaled semiconductor devices.

Phonon dispersions in <100> silicon nanowires (SiNW) are modeled using a
Modified Valence Force Field (MVFF) method based on atomistic force constants.
The model replicates the bulk Si phonon dispersion very well. In SiNWs, apart
from four acoustic like branches, a lot of flat branches appear indicating
strong phonon confinement in these nanowires and strongly affecting their
lattice properties. The sound velocity (Vsnd) and the lattice thermal
conductance (kl) decrease as the wire crosssection size is reduced whereas the
specific heat (Cv) increases due to increased phonon confinement and
surfacetovolume ratio (SVR).

The Landauer approach to diffusive transport is mathematically related to the
solution of the Boltzmann transport equation, and expressions for the
thermoelectric parameters in both formalisms are presented. Quantum mechanical
and semiclassical techniques to obtain from a full description of the
bandstructure, E(k), the number of conducting channels in the Landauer approach
or the transport distribution in the Boltzmann solution are developed and
compared. Thermoelectric transport coefficients are evaluated from an atomistic
level, full band description of a crystal. Several example calculations for
representative bulk materials are presented, and the full band results are
related to the more common effective mass formalism. Finally, given a full E(k)
for a crystal, a procedure to extract an accurate, effective mass level
description is presented.