• We report on the synthesis and characterization of nanocrystalline delta-MoN by crystallization of amorphous thin films grown on (100) Si by reactive sputtering at room temperature. Films with chemical composition MoN were grown using a deposition pressure of 5mTorr with a reactive mixture of Ar/(Ar+N2)=0.5. The as-grown films display mostly amorphous structure. Nanocrystalline delta-MoN phase is obtained after annealing at temperatures above 600 {\deg}C. The superconducting critical temperature Tc depends on film thickness. Thick films (170 nm) annealed at 700 {\deg}C for 30 min display a Tc = 11.2 K (close to the one reported for bulk specimens: 13 K), which is gradually suppressed to 7.2 K for 40 nm thick delta-MoN films. Our results provide a simple method to synthesize superconducting nitride thin films on silicon wafers with Tc above the ones observed for conventional superconductors such as Nb.
  • In this work, we study thickness effects in the structural and electronic properties of $\beta$-FeSe films grown by sputtering. We report a superconductor-insulator transition (SIT) as a function of thickness, for films in different substrates (SrTiO$_{3}$, MgO and Si) in a wide range of growth temperatures. As the thickness increases the evolution of the structural properties and morphology is not trivial, which can be associated to a strained initial growth. In the limit of textured thick films, the critical temperature takes values slightly higher than the expected for bulk $\beta$-FeSe, $T_c\simeq12\,$K, probably owing to growth associated stress. The electronic structure was explored by performing magnetotransport and Hall effect experiments, finding features associated to the tetragonal-to-orthorrombic structural phase transition.
  • We report on the critical current density Jc and the vortex dynamics of pristine and 3 MeV proton irradiated (cumulative dose equal to 2x10^16 cm^-2) $\beta$-FeSe single crystals. We also analyze a remarkable dependence of the superconducting critical temperature Tc, Jc and the flux creep rate S on the sample mounting method. Free-standing crystals present Tc =8.4(1)K, which increases to 10.5(1)K when they are fixed to the sample holder by embedding them with GE-7031 varnish. On the other hand, the irradiation has a marginal effect on Tc. The pinning scenario can be ascribed to twin boundaries and random point defects. We find that the main effect of irradiation is to increase the density of random point defects, while the embedding mainly reduces the density of twin boundaries. Pristine and irradiated crystals present two outstanding features in the temperature dependence of the flux creep rate: S(T) presents large values at low temperatures, which can be attributed to small pinning energies, and a plateau at intermediate temperatures, which can be associated with glassy relaxation. From Maley analysis, we observe that the characteristic glassy exponent {\mu} changes from ~ 1.7 to 1.35-1.4 after proton irradiation.
  • We report on the superconducting properties of molybdenum nitride thin films grown by reactive DC sputtering at room temperature with a N2:Ar mixture. Thin films grown using 5 % N2 concentration display Tc = 8 K, which is gradually reduced and abruptly disappears for 40 % N2 concentration. This suppression can be associated with changes in the nitrogen stoichiometry from Mo2N to MoN. Our results provide an effective and simple path to prepare Mo2Nx thin films with tunable Tc, which is relevant for the investigation of the fundamental properties and for technological applications.
  • We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $\mu$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and 4x10$^{14}$ cm$^{-2}$. At temperatures below 40 K with the magnetic field applied parallel (H//c) and at 45{\deg} (H//45{\deg}) to the c-axis, the in-field J$_c$ dependences can be significantly improved by irradiation. For doses of 1x10$^{14}$ cm$^{-2}$ the J$_c$ values at $\mu$$_0$H = 5 T are doubled without affecting significantly the J$_c$ at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H//c and H//45{\deg} in pristine films presents characteristic glassy exponents $\mu$ = 1.63 and $\mu$ = 1.45, respectively. For samples irradiated with 1x10$^{14}$ cm$^{-2}$, these values drop to $\mu$ = 1.45 and $\mu$ =1.24, respectively.
  • We report the magnetic field -- temperature ($H-T$) phase diagram of Ca$_{10}$(Pt$_4$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ ($x\approx 0.05$) single crystals, which consists of normal, vortex liquid, plastic creep and elastic creep phases. The upper critical field anisotropy is determined by a radio frequency technique via the measurements of magnetic penetration depth, $\lambda$. Both, irreversibility line, $H_{irr}(T)$, and flux creep line, $H^{SPM}(T)$, are obtained by measuring the magnetization. We find that $H_{irr}(T)$ is well described by the Lindemann criterion with parameters similar to those for cuprates, while small $H^{SPM}(T)$ results in a wide plastic creep regime. The flux creep rates in the elastic creep regime are in qualitative agreement with the collective creep theory for random point defects. A gradual crossover from a single vortex to a bundles regime is observed. Moreover, we obtain $\lambda(4~ \text K) = 260(26)$ nm through the direct measurement of the London penetration depth by magnetic force microscopy.
  • We report the influence of intrinsic superconducting parameters on the vortex dynamics and the critical current densities of a MgB$_2$ thin film. The small magnetic penetration depth of \lambda = 50 nm at T=4 K is related to a clean \pi-band, and transport and magnetization data show an upper critical field similar to those reported in clean single crystals. We find a high self-field critical current density Jc, which is strongly reduced with applied magnetic field, and attribute this to suppression of the superconductivity in the \pi-band. The temperature dependence of the creep rate S(T) at low magnetic field can be explained by a simple Anderson-Kim mechanism. The system shows high pinning energies at low field that are strongly suppressed by high field, which is consistent with a two-band contribution.
  • In this work we report the influence of intrinsic superconducting parameters on the vortex dynamics in an overdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (x=0.14) single crystal. We find a superconducting critical temperature of 13.5 K, magnetic penetration depth $\lambda_{ab}$(0) = 660 $\pm$ 50 nm, coherence length $\xi_{ab}$(0) = 5 nm, and the upper critical field anisotropy $\gamma_{T\rightarrow Tc}$ $\approx$ 3.7. In fact, the Ginzburg-Landau model may explain the angular dependent $H_{c2}$ for this anisotropic three-dimensional superconductor. The vortex phase diagram, in comparison with the optimally doped compound, presents a narrow collective creep regime. In addition, we found no sign of correlated pinning along the c axis. Our results show that vortex core to defect size ratio and $\lambda$ play an important role in the resulting vortex dynamics in materials with similar intrinsic thermal fluctuations.
  • We studied the ferromagnetic topology in a Y$_{0.67}$Ca$_{0.33}$MnO$_3$ thin film with a combination of magnetic force microscopy and magnetization measurements. Our results show that the spin-glass like behavior, reported previously for this system, could be attributed to frustrated interfaces of the ferromagnetic clusters embedded in a non-ferromagnetic matrix. We found temperature dependent changes of the magnetic topology at low temperatures, which suggests a non-static Mn$^{3+}$/Mn$^{4+}$ ratio.
  • We report on the dramatic effect of random point defects, produced by proton irradiation, on the superfluid density $\rho_{s}$ in superconducting Ca$_{0.5}$Na$_{0.5}$Fe$_2$As$_2$ single crystals. The magnitude of the suppression is inferred from measurements of the temperature-dependent magnetic penetration depth $\lambda(T)$ using magnetic force microscopy. Our findings indicate that a radiation dose of 2$\times10^{16}$cm$^{-2}$ produced by 3 MeV protons results in a reduction of the superconducting critical temperature $T_{c}$ by approximately 10%. % with no appreciable change in the slope of the upper critical fields. In contrast, $\rho_{s}(0)$ is suppressed by approximately 60%. This break-down of the Abrikosov-Gorkov theory may be explained by the so-called "Swiss cheese model", which accounts for the spatial suppression of the order parameter near point defects similar to holes in Swiss cheese. Both the slope of the upper critical field and the penetration depth $\lambda(T/T_{c})/\lambda(0)$ exhibit similar temperature dependences before and after irradiation. This may be due to a combination of the highly disordered nature of Ca$_{0.5}$Na$_{0.5}$Fe$_2$As$_2$ with large intraband and simultaneous interband scattering as well as the $s^\pm$-wave nature of short coherence length superconductivity.
  • We present an experimental approach using magnetic force microscopy for measurements of the absolute value of the magnetic penetration depth $\lambda$ in superconductors. $\lambda$ is obtained in a simple and robust way without introducing any tip modeling procedure via direct comparison of the Meissner response curves for a material of interest to those measured on a reference sample. Using a well-characterized Nb film as a reference, we determine the absolute value of $\lambda$ in a Ba(Fe$_{0.92}$Co$_{0.08}$)$_{2}$As$_{2}$ single crystal and a MgB$_2$ thin film through a comparative experiment. Our apparatus features simultaneous loading of multiple samples, and allows straightforward measurement of the absolute value of $\lambda$ in superconducting thin film or single crystal samples.
  • We report the temperature dependent magnetic penetration depth $\lambda(T)$ and the superconducting critical field $H_{c2}(T)$ in a 500-nm MgB$_{2}$ film. Our analysis of the experimental results takes into account the two gap nature of the superconducting state and indicates larger intraband diffusivity in the three-dimensional (3D) $\pi$ band compared to that in the two-dimensional (2D) $\sigma$ band. Direct comparison of our results with those reported previously for single crystals indicates that larger intraband scattering in the 3D $\pi$ band leads to an increase of $\lambda$. We calculated $\lambda$ and the thermodynamic critical field $H_{c}\approx$2000 Oe employing the gap equations for two-band superconductors. Good agreement between the measured and calculated $\lambda$ value indicates the two independent measurements, such as magnetic force microscopy and transport, provide a venue for investigating superconducting properties in multi-band superconductors.
  • We have measured the temperature dependence of the absolute value of the magnetic penetration depth $\lambda(T)$ in a Ca$_{10}$(Pt$_{3}$As$_{8}$)[(Fe$_{1-x}$Pt$_{x}$)$_{2}$As$_{2}$]$_{5}$ (x=0.097) single crystal using a low-temperature magnetic force microscope (MFM). We obtain $\lambda_{ab}$(0)$\approx$1000 nm via extrapolating the data to $T = 0$. This large $\lambda$ and pronounced anisotropy in this system are responsible for large thermal fluctuations and the presence of a liquid vortex phase in this low-temperature superconductor with critical temperature of 11 K, consistent with the interpretation of the electrical transport data. The superconducting parameters obtained from $\lambda$ and coherence length $\xi$ place this compound in the extreme type \MakeUppercase{\romannumeral 2} regime. Meissner responses (via MFM) at different locations across the sample are similar to each other, indicating good homogeneity of the superconducting state on a sub-micron scale.
  • This paper has been withdrawn by authors.
  • We report an unusual giant linear magnetostrictive effect in the ferrimagnet Gd$_{2/3}$Ca$_{1/3}$MnO$_3$ ($T_{c} \approx$80 K). Remarkably, the magnetostriction, negative at high temperature ($T \approx T_{c}$), becomes positive below 15 K when the magnetization of the Gd sublattice overcomes the magnetization of the Mn sublattice. A rather simple model where the magnetic energy competes against the elastic energy gives a good account of the observed results and confirms that Gd plays a crucial role in this unusual observation. Unlike previous works in manganites where only striction associated with 3$d$ Mn orbitals is considered, our results show that the lanthanide 4$f$ orbitals related striction can be very important too and it cannot be disregarded.
  • We have investigated the ferrimagnetic domain structure in a Gd$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin film using magnetic force microscopy. We observe clear signs of phase separation, with magnetic islands embedded in a non-magnetic matrix. We also directly visualize the reversal of magnetization of ferrimagnetic domains as a function of temperature and attribute it to a change in the balance of magnetization of anti-aligned Mn and Gd sublattices.
  • We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged.
  • We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.
  • We present a study of the magnetic properties of Gd2/3Ca1/3MnO3 single crystals at low temperatures. We show that this material behave as an inhomogeneous ferrimagnet. In addition to small saturation magnetization at 5 K, we have found history dependent effects in the magnetization and the presence of exchange bias. These features are compatible with microscopic phase separation in the clean Gd2/3Ca1/3MnO3 system studied.
  • The magnetic properties of a series of YBa2Cu3O7-x/La2/3Ca1/3MnO3 (YBCO/LC1/3MO) superlattices grown by dc sputtering at high oxygen pressures (3.5 mbar) show the expected ferromagnetic behaviour. However, field cooled hysteresis loops at low temperature show the unexpected existence of exchange bias, effect associated with the existence of ferromagnetic/antiferromagnetic (F/AF) interfaces. The blocking temperature (TB) is found thickness dependent and the exchange bias field (HEB) is found inversely proportional to the FM layer thickness, as expected. The presence of an AF material is probably associated to interface disorder and Mn valence shift towards Mn4+.