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We systematically study the high-resolution and polarized Raman spectra of
multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are
observed in the ultralow-frequency region, which are used to quantitatively
evaluate the interlayer coupling in ML MoTe2 based on the linear chain model,
in which only the nearest interlayer coupling is considered. The Raman spectra
on three different substrates verify the negligible substrate effect on the
phonon frequencies of ML MoTe2. Ten excitation energies are used to measure the
high-frequency modes of N-layer MoTe2 (NL MoTe2; N is an integer). Under the
resonant excitation condition, we observe N-dependent Davydov components in ML
MoTe2 , originating from the Raman-active A'1(A21g) modes at ~172 cm-1. More
than two Davydov components are observed in NL MoTe2 for N larger than 4 by
Raman spectroscopy. The N-dependent Davydov components are further investigated
based on the symmetry analysis. A van der Waals model only considering the
nearest interlayer coupling has been proposed to well understand the Davydov
splitting of high-frequency A'1(A21g) modes. The different resonant profiles
for the two Davydov components in 3L MoTe2 indicate that proper excitation
energy of ~1.8-2.2 eV must be chosen to observe the Davydov splitting in ML
MoTe2 . Our work presents a simple way to identify layer number of ultrathin
MoTe2 flakes by the corresponding number and peak position of Davydov
components. Our work also provides a direct evidence from Raman spectroscopy of
how the nearest van der Waals interactions significantly affect the frequency
of the high-frequency intralayer phonon modes in multilayer MoTe2 and expands
the understanding on the lattice vibrations and interlayer coupling of
transition metal dichalcogenides and other two-dimensional materials.
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In monolayer MoS2 optical transitions across the direct bandgap are governed
by chiral selection rules, allowing optical valley initialization. In time
resolved photoluminescence (PL) experiments we find that both the polarization
and emission dynamics do not change from 4K to 300K within our time resolution.
We measure a high polarization and show that under pulsed excitation the
emission polarization significantly decreases with increasing laser power. We
find a fast exciton emission decay time on the order of 4ps. The absence of a
clear PL polarization decay within our time resolution suggests that the
initially injected polarization dominates the steady state PL polarization. The
observed decrease of the initial polarization with increasing pump photon
energy hints at a possible ultrafast intervalley relaxation beyond the
experimental ps time resolution. By compensating the temperature induced change
in bandgap energy with the excitation laser energy an emission polarization of
40% is recovered at 300K, close to the maximum emission polarization for this
sample at 4K.
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We study by Raman scattering the shear and layer breathing modes in
multilayer MoS2. These are identified by polarization measurements and symmetry
analysis. Their positions change with the number of layers, with different
scaling for odd and even layers. A chain model explains the results, with
general applicability to any layered material, and allows one to monitor their
thickness.
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We report polarization resolved photoluminescence from monolayer MoS2, a
two-dimensional, non-centrosymmetric crystal with direct energy gaps at two
different valleys in momentum space. The inherent chiral optical selectivity
allows exciting one of these valleys and close to 90% polarized emission at 4K
is observed with 40% polarization remaining at 300K. The high polarization
degree of the emission remains unchanged in transverse magnetic fields up to 9T
indicating robust, selective valley excitation.
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We uncover the interlayer shear mode of multi-layer graphene samples, ranging
from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding
Raman peak measures the interlayer coupling. This peak scales from~43cm-1 in
bulk graphite to~31cm-1 in BLG. Its low energy makes it a probe of near-Dirac
point quasi-particles, with a Breit-Wigner-Fano lineshape due to resonance with
electronic transitions. Similar shear modes are expected in all layered
materials, providing a direct probe of interlayer interactions
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We use anhydrous ferric chloride (FeCl3) to intercalate graphite flakes
consisting of 2 to 4 graphene layers and to dope graphene monolayers. The
intercalant, staging, stability and doping of the resulting intercalation
compounds (ICs) are characterized by Raman scattering. The G peak of monolayer
graphene heavily-doped by FeCl3 upshifts to~1627cm-1. 2-4 layer ICs have
similar upshifts, and a Lorentzian lineshape for the 2D band, indicating that
each layer behaves as a decoupled heavily doped monolayer. By performing Raman
measurement at different excitation energies we show that, for a given doping
level, the 2D peak can be suppressed by Pauli blocking for laser energy below
the doping level. Thus, multi-wavelength Raman spectroscopy allows a direct
evaluation of the Fermi level, complementary to that derived by Raman
measurements at excitation energies higher than the doping level. We estimate a
Fermi level shift of~0.9eV. These ICs are ideal test-beds for the physical and
chemical properties of heavily-doped graphenes.
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Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs
quantum wells (QWs) with different structural symmetry has been studied by
using time-resolved Kerr rotation technique. The spin relaxation time is
measured to be much longer for the symmetrically-designed GaAs quantum well
comparing with the asymmetrical one, indicating the strong influence of Rashba
spin-orbit coupling on spin relaxation. D'yakonov-Perel' (DP) mechanism has
been revealed to be the dominant contribution for spin relaxation in
GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic dependent
behavior on both temperature and photo-excited carrier density, revealing the
important role of non-monotonic temperature and density dependence of
electron-electron Coulomb scattering. Our experimental observations demonstrate
good agreement with recently developed spin relaxation theory based on
microscopic kinetic spin Bloch equation approach.
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Photoluminescence is commonly used to identify the electronic structure of
individual nanotubes. But, nanotubes naturally occur in bundles. Thus, we
investigate photoluminescence of nanotube bundles. We show that their complex
spectra are simply explained by exciton energy transfer between adjacent tubes,
whereby excitation of large gap tubes induces emission from smaller gap ones
via Forster interaction between excitons. The consequent relaxation rate is
faster than non-radiative recombination, leading to enhanced photoluminescence
of acceptor tubes. This fingerprints bundles with different compositions and
opens opportunities to optimize them for opto-electronics.