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The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a
symmetry-breaking insulator-insulator transition below 100 K that appears to be
triggered by electron tunneling into the empty surface-state bands. No such
transition is seen in electron-doped systems. To elucidate the nature and
driving force of this phenomenon, the structure of the interface must be
resolved. Here we report on an extensive experimental and theoretical study,
including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical
low-energy electron diffraction (LEED) analysis, and density functional theory
(DFT) calculations, to elucidate the structure of this interface. We consider
six different structure models, three of which have been proposed before, and
conclude that only two of them can account for the majority of experimental
data. One of them is the model according to Tornevik et al. [C. Tornevik et
al., Phys. Rev. B 44, 13144 (1991)] with a total Sn coverage of 14/12
monolayers (ML). The other is the 'revised trimer model' with a total Sn
coverage of 13/12 ML, introduced in this work. These two models are very
difficult to discriminate on the basis of DFT or LEED alone, but STS data
clearly point toward the T\"ornevik model as the most viable candidate among
the models considered here. The STS data also provide additional insights
regarding the electron-injection-driven phase transformation as well as the
critical role of valence band holes in this process. Similar processes may
occur at other metal/semiconductor interfaces, provided they are non-metallic
and can be doped. This could open up a new pathway toward the creation of novel
surface phases with potentially very interesting and desirable electronic
properties.
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Recent advances in scanning transmission electron and scanning tunneling
microscopies allow researchers to measure materials structural and electronic
properties, such as atomic displacements and charge density modulations, at an
Angstrom scale in real space. At the same time, the ability to quickly acquire
large, high-resolution datasets has created a challenge for rapid physics-based
analysis of images that typically contain several hundreds to several thousand
atomic units. Here we demonstrate a universal deep-learning based framework for
locating and characterizing atomic species in the lattice, which can be applied
to different types of atomically resolved measurements on different materials.
Specifically, by inspecting and categorizing features in the output layer of a
convolutional neural network, we are able to detect structural and electronic
'anomalies' associated with the presence of point defects in a tungsten
disulfide monolayer, non-uniformity of the charge density distribution around
specific lattice sites on the surface of strongly correlated oxides, and
transition between different structural states of buckybowl molecules. We
further extended our method towards tracking, from one image frame to another,
minute distortions in the geometric shape of individual Si dumbbells in a
3-dimensional Si sample, which are associated with a motion of lattice defects
and impurities. Due the applicability of our framework to both scanning
tunneling microscopy and scanning transmission electron microscopy
measurements, it can provide a fast and straightforward way towards creating a
unified database of defect-property relationships from experimental data for
each material.
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Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate
results in the formation of a hole-doped Mott insulator, with electronic
properties that are remarkably similar to those of the high-Tc copper oxide
compounds. In this work, we show that the maximum hole-density of this system
increases with decreasing domain size as the area of the Mott insulating
domains approaches the nanoscale regime. Concomitantly, scanning tunneling
spectroscopy data at 4.4 K reveal an increasingly prominent zero bias anomaly
(ZBA). We consider two different scenarios as potential mechanisms for this
ZBA: chiral d_(x^2 -y^2 )+ id_xy wave superconductivity and a dynamical Coulomb
blockade (DCB) effect. The latter arises due to the formation of a resistive
depletion layer between the nano-domains and the substrate. Both models fit the
tunneling spectra with weaker ZBAs, while the DCB model clearly fits better to
spectra recorded at higher temperatures or from the smallest domains with the
strongest ZBA. Consistently, STS spectra from the lightly-doped substrates
display oscillatory behavior that can be attributed to conventional Coulomb
staircase behavior, which becomes stronger for smaller sized domains. We
conclude that the ZBA is predominantly due to a DCB effect, while a
superconducting instability is absent or a minor contributing factor.
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The physics of doped Mott insulators is at the heart of some of the most
exotic physical phenomena in materials research including insulator-metal
transitions, colossal magneto-resistance, and high-temperature
superconductivity in layered perovskite compounds. Advances in this field would
greatly benefit from the availability of new material systems with similar
richness of physical phenomena, but with fewer chemical and structural
complications in comparison to oxides. Using scanning tunneling microscopy and
spectroscopy, we show that such a system can be realized on a silicon platform.
Adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a
triangular surface lattice with half-filled dangling bond orbitals. Modulation
hole-doping of these dangling bonds unveils clear hallmarks of Mott physics,
such as spectral weight transfer and the formation of quasi-particle states at
the Fermi level, well-defined Fermi contour segments, and a sharp singularity
in the density of states. These observations are remarkably similar to those
made in complex oxide materials, including high-temperature superconductors,
but highly extraordinary within the realm of conventional sp-bonded
semiconductor materials. It suggests that exotic quantum matter phases can be
realized and engineered on silicon-based materials platforms.
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Strontium titanate (SrTiO3, STO) is a critically important material for the
study of emergent electronic phases in complex oxides, as well as for the
development of applications based on their heterostructures. Despite the large
body of knowledge on STO, there are still many uncertainties regarding the role
of defects in the properties of STO, including their influence on
ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures.
We present a detailed analysis of the decay of persistent photoconductivity in
STO single crystals with defect concentrations that are relatively low but
significantly affect their electronic properties. The results show that
photo-activated electron transport cannot be described by a superposition of
the properties due to independent point defects as current models suggest but
is, instead, governed by defect complexes that interact through dynamic
correlations. These results emphasize the importance of defect correlations for
activated electronic transport properties of semiconducting and insulating
perovskite oxides.
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The availability of low-index rutile TiO2 single crystal substrates with
atomically flat surfaces is essential for enabling epitaxial growth of rutile
transition metal oxide films. The high surface energy of the rutile (001)
surface often leads to surface faceting, which precludes the sputter and
annealing treatment commonly used for the preparation of clean and atomically
flat TiO2(110) substrate surfaces. In this work, we reveal that stable and
atomically flat rutile TiO2(001) surfaces can be prepared with an atomically
ordered reconstructed surface already during a furnace annealing treatment in
air. We tentatively ascribe this result to the decrease in surface energy
associated with the surface reconstruction, which removes the driving force for
faceting. Despite the narrow temperature window where this morphology can
initially be formed, we demonstrate that it persists in homoepitaxial growth of
TiO2(001) thin films. The stabilization of surface reconstructions that prevent
faceting of high-surface-energy crystal faces may offer a promising avenue
towards the realization of a wider range of high quality epitaxial transition
metal oxide heterostructures.
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We introduce the concept of optical control of the fluorescence yield of CdSe
quantum dots through plasmon-induced structural changes in random
semicontinuous nanostructured gold films. We demonstrate that the wavelength-
and polarization dependent coupling between quantum dots and the semicontinuous
films, and thus the fluorescent emission spectrum, can be controlled and
significantly increased through the optical extinction of a selective band of
eigenmodes in the films. This optical method of effecting controlled changes in
the metal nanostructure allows for versatile functionality in a single sample
and opens a pathway to in situ control over the fluorescence spectrum.
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The chemical bonding of adsorbate molecules on transition-metal surfaces is
strongly influenced by the hybridization between the molecular orbitals and the
metal d-band. The strength of this interaction is often correlated with the
location of the metal d-band center relative to the Fermi level. Here, we
exploit finite size effects in the electronic structure of ultrathin Pd(111)
films grown on Ru(0001) to tune their reactivity by changing the film thickness
one atom layer at a time, while keeping all other variables unchanged.
Interestingly, while bulk Pd(111) is reactive towards oxygen, Pd(111) films
below five monolayers are surprisingly inert. This observation is fully in line
with the d-band model prediction when applied to the orbitals involved in the
bonding. The shift of the d-band center with film thickness is primarily
attributed to shifts in the partial density of states associated with the 4dxz
and 4dyz orbitals. This study gives an in-depth look into the orbital specific
contributions to the surface chemical reactivity, providing new insights that
could be useful in surface catalysis.
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We report on the use of helium ion implantation to independently control the
out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without
changing the in-plane lattice constants. The process is reversible by a vacuum
anneal. Resistance and magnetization measurements show that even a small
increase in the out-of-plane lattice constant of less than 1% can shift the
metal-insulator transition and Curie temperatures by more than 100 {\deg}C.
Unlike conventional epitaxy-based strain tuning methods which are constrained
not only by the Poisson effect but by the limited set of available substrates,
the present study shows that strain can be independently and continuously
controlled along a single axis. This permits novel control over orbital
populations through Jahn-Teller effects, as shown by Monte Carlo simulations on
a double-exchange model. The ability to reversibly control a single lattice
parameter substantially broadens the phase space for experimental exploration
of predictive models and leads to new possibilities for control over materials'
functional properties.
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The configuration and evolution of coexisting mesoscopic domains with
contrasting material properties are critical in creating novel functionality
through emergent physical properties. However, current approaches that map the
domain structure involve either spatially resolved but protracted scanning
probe experiments without real time information on the domain evolution, or
time resolved spectroscopic experiments lacking domain-scale spatial
resolution. We demonstrate an elegant experimental technique that bridges these
local and global methods, giving access to mesoscale information on domain
formation and evolution at time scales orders of magnitude faster than current
spatially resolved approaches. Our straightforward analysis of laser speckle
patterns across the first order phase transition of VO$_2$ can be generalized
to other systems with large scale phase separation and has potential as a
powerful method with both spatial and temporal resolution to study phase
separation in complex materials.
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Organic spintronic devices have been appealing because of the long spin life
time of the charge carriers in the organic materials and their low cost,
flexibility and chemical diversity. In previous studies, the control of
resistance of organic spin valves is generally achieved by the alignment of the
magnetization directions of the two ferromagnetic electrodes, generating
magnetoresistance.1 Here we employ a new knob to tune the resistance of organic
spin valves by adding a thin ferroelectric interfacial layer between the
ferromagnetic electrode and the organic spacer. We show that the resistance can
be controlled by not only the spin alignment of the two ferromagnetic
electrodes, but also by the electric polarization of the interfacial
ferroelectric layer: the MR of the spin valve depends strongly on the history
of the bias voltage which is correlated with the polarization of the
ferroelectric layer; the MR even changes sign when the electric polarization of
the ferroelectric layer is reversed. This new tunability can be understood in
terms of the change of relative energy level alignment between ferromagnetic
electrode and the organic spacer caused by the electric dipole moment of the
ferroelectric layer. These findings enable active control of resistance using
both electric and magnetic fields, opening up possibility for multi-state
organic spin valves and shed light on the mechanism of the spin transport in
organic spin valves.
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The oxygen stoichiometry has a large influence on the physical and chemical
properties of complex oxides. Most of the functionality in e.g. catalysis and
electrochemistry depends in particular on control of the oxygen stoichiometry.
In order to understand the fundamental properties of intrinsic surfaces of
oxygen-deficient complex oxides, we report on in situ temperature dependent
scanning tunnelling spectroscopy experiments on pristine oxygen deficient,
epitaxial manganite films. Although these films are insulating in subsequent ex
situ in-plane electronic transport experiments at all temperatures, in situ
scanning tunnelling spectroscopic data reveal that the surface of these films
exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset
of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient
film. The surprising proximity of the surface MIT transition temperature of
nonstoichiometric films with that of the fully oxygenated bulk suggests that
the electronic properties in the surface region are not significantly affected
by oxygen deficiency in the bulk. This carries important implications for the
understanding and functional design of complex oxides and their interfaces with
specific electronic properties for catalysis, oxide electronics and
electrochemistry.
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An experimental study was conducted on controlling the growth mode of
La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition
(PLD) by tuning growth temperature, pressure and laser fluence. Different thin
film morphology, crystallinity and stoichiometry have been observed depending
on growth parameters. To understand the microscopic origin, the adatom
nucleation, step advance processes and their relationship to film growth were
theoretically analyzed and a growth diagram was constructed. Three boundaries
between highly and poorly crystallized growth, 2D and 3D growth, stoichiometric
and non-stoichiometric growth were identified in the growth diagram. A good fit
of our experimental observation with the growth diagram was found. This case
study demonstrates that a more comprehensive understanding of the growth mode
in PLD is possible.
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The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$
films have been studied using x-ray, electron and neutron diffraction methods.
The polar structure of these films are found to persist up to 1050 K; and the
switchability of the polar behavior is observed at room temperature, indicating
ferroelectricity. An antiferromagnetic order was shown to occur below 440 K,
followed by a spin reorientation resulting in a weak ferromagnetic order below
130 K. This observation of coexisting multiple ferroic orders demonstrates that
hexagonal LuFeO$_3$ films are room-temperature multiferroics.
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A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed
laser deposition is constructed based on extensive growth experiments.
The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and
O$_2$ pressure conditions.
An understanding of the growth mechanism of Lu-Fe-O compound films is offered
in terms of the thermochemistry at the surface.
Superparamagnetism is observed in LuFe$_2$O$_4$ film and is explained in
terms of the effect of the impurity h-LuFeO$_3$ phase and structural defects .