We discover a pair of spin-polarized surface bands on the (111) face of grey
arsenic by using angle-resolved photoemission spectroscopy (ARPES). In the
occupied side, the pair resembles typical nearly-free-electron Shockley states
observed on noble-metal surfaces. However, pump-probe ARPES reveals that the
spin-polarized pair traverses the bulk band gap and that the crossing of the
pair at $\bar\Gamma$ is topologically unavoidable. First-principles
calculations well reproduce the bands and their non-trivial topology; the
calculations also support that the surface states are of Shockley type because
they arise from a band inversion caused by crystal field. The results provide
compelling evidence that topological Shockley states are realized on As(111).
Condensed matter systems can host quasiparticle excitations that are
analogues to elementary particles such as Majorana, Weyl, and Dirac fermions.
Recent advances in band theory have expanded the classification of fermions in
crystals, and revealed crystal symmetry-protected electron excitations that
have no high-energy counterparts. Here, using angle-resolved photoemission
spectroscopy, we demonstrate the existence of a triply degenerate point in the
electronic structure of MoP crystal, where the quasiparticle excitations are
beyond the Majorana-Weyl-Dirac classification. Furthermore, we observe pairs of
Weyl points in the bulk electronic structure coexisting with the 'new
fermions', thus introducing a platform for studying the interplay between
different types of fermions.
By using angle-resolved photoemission spectroscopy combined with
first-principles calculations, we reveal that the topmost unit cell of ZrSnTe
crystal hosts two-dimensional (2D) electronic bands of topological insulator
(TI) state, though such a TI state is defined with a curved Fermi level instead
of a global band gap. Furthermore, we find that by modifying the dangling bonds
on the surface through hydrogenation, this 2D band structure can be manipulated
so that the expected global energy gap is most likely to be realized. This
facilitates the practical applications of 2D TI in heterostructural devices and
those with surface decoration and coverage. Since ZrSnTe belongs to a large
family of compounds having the similar crystal and band structures, our
findings shed light on identifying more 2D TI candidates and superconductor-TI
heterojunctions supporting topological superconductors.