
Understanding the dynamics of interacting quantum spins has been one of the
active areas of condensed matter physics research. Recently, extensive
inelastic neutron scattering measurements have been carried out in an
interesting class of systems, Cr_2(W, Te, Mo)O_6. These systems consist of
bilayers of Cr^{3+} spins (S=3/2) with strong antiferromagnetic interbilayer
coupling (J) and tuneable intrabilayer coupling (j) from ferro (for W and Mo)
to antiferro (for Te). In the limit when J>j, the system reduces to weakly
interacting quantum spin3/2 dimers. In this paper we discuss the
lowtemperature magnetic properties of Cr_2TeO_6 systems where both intralayer
and interlayer exchange couplings are antiferromagnetic, i.e. J,j>0. Using
linear spinwave theory we obtain the magnon dispersion, sublattice
magnetization, twomagnon density of states, and longitudinal spinspin
correlation function.

We present a new type of colossal magnetoresistance (CMR) arising from an
anomalous collapse of the Mott insulating state via a modest magnetic field in
a bilayer ruthenate, Tidoped Ca$_3$Ru$_2$O$_7$. Such an insulatormetal
transition is accompanied by changes in both lattice and magnetic structures.
Our findings have important implications because a magnetic field usually
stabilizes the insulating ground state in a MottHubbard system, thus calling
for a deeper theoretical study to reexamine the magnetic field tuning of Mott
systems with magnetic and electronic instabilities and spinlatticecharge
coupling. This study further provides a model approach to search for CMR
systems other than manganites, such as Mott insulators in the vicinity of the
boundary between competing phases.

GeCu2O4 exhibits a tetragonal spinel structure due to the strong JahnTeller
distortion associated with Cu2+ ions. We show that its magnetic structure can
be described as slabs composed of a pair of layers with orthogonally oriented
spin 1/2 Cu chains in the basal ab plane. The spins between the two layers
within a slab are collinearly aligned while the spin directions of neighboring
slabs are perpendicular to each other. Interestingly, we find that spins along
each chain form an unusual upupdowndown (UUDD) pattern, suggesting a
nonnegligible nearestneighbor biquadratic exchange interaction in the
effective classical spin Hamiltonian. We hypothesize that spinorbit coupling
and orbital mixing of Cu2+ ions in this system is nonnegligible, which calls
for future calculations using perturbation theory with extended Hilbert (spin
and orbital) space and calculations based on density functional theory
including spinorbit coupling and looking at the global stability of the UUDD
state.

The compositional ordering of Ag, Pb, Sb, Te ions in
(AgSbTe$_{2}$)$_{x}$(PbTe)$_{2(1x)}$ systems possessing a NaCl structure is
studied using a Coulomb lattice gas (CLG) model on a facecentered cubic (fcc)
lattice and Monte Carlo simulations. Our results show different possible
microstructural orderings. Ordered superlattice structures formed out of
AgSbTe$_{2}$ layers separated by Pb$_{2}$Te$_{2}$ layers are observed for a
large range of $x$ values. For $x=0.5$, we see an array of tubular structures
formed by AgSbTe$_{2}$ and Pb$_{2}$Te$_{2}$ blocks. For $x=1$, AgSbTe$_{2}$ has
a bodycentered tetragonal (bct) structure which is in agreement with previous
Monte Carlo simulation results for restricted primitive model (RPM) at closed
packed density. The phase diagram of this frustrated CLG system is discussed.

We report the complex magnetic phase diagram and electronic structure of
Cr2(Te1xWx)O6 systems. While compounds with different x values possess the
same crystal structure, they display different magnetic structures below and
above xc = 0.7, where both the transition temperature TN and sublattice
magnetization (Ms) reach a minimum. Unlike many known cases where magnetic
interactions are controlled either by injection of charge carriers or by
structural distortion induced via chemical doping, in the present case it is
achieved by tuning the orbital hybridization between Cr 3d and O 2p orbitals
through W 5d states. The result is supported by abinitio electronic structure
calculations. Through this concept, we introduce a new approach to tune
magnetic and electronic properties via chemical doping.

Electronic structure and thermoelectric properties of marcasite (m) and
synthetic pyrite (p) phases of FeX$_2$ (X=Se,Te) have been investigated using
first principles density functional theory and Boltzmann transport equation.
The plane wave pseudopotential approximation was used to study the structural
properties and fullpotential linear augmented plane wave method was used to
obtain the electronic structure and thermoelectric properties (thermopower and
power factor scaled by relaxation time). From total energy calculations we find
that mFeSe$_2$ and mFeTe$_2$ are stable at ambient conditions and no
structural transition from marcasite to pyrite is seen under the application of
hydrostatic pressure. The calculated ground state structural properties agree
quite well with available experiments. From the calculated thermoelectric
properties, we find that both m and p forms are good candidates for
thermoelectric applications. However, hole doped mFeSe$_2$ appears to be the
best among all the four systems.

An interesting class of tetrahedrally coordinated ternary compounds have
attracted considerable interest because of their potential as good
thermoelectrics. These compounds, denoted as I$_3$VVI$_4$, contain three
monovalentI (Cu, Ag), one nominally pentavalentV (P, As, Sb, Bi), and four
hexavalentVI (S, Se, Te) atoms; and can be visualized as ternary derivatives
of the IIVI zincblende or wurtzite semiconductors, obtained by starting from
four unit cells of (IIVI) and replacing four type II atoms by three type I and
one type V atoms. In trying to understand their electronic structures and
transport properties, some fundamental questions arise: whether V atoms are
indeed pentavalent and if not how do these compounds become semiconductors,
what is the role of V lone pair electrons in the origin of band gaps, and what
are the general characteristics of states near the valence band maxima and the
conduction band minima. We answer some of these questions using ab initio
calculations (density functional methods with both local and nonlocal
exchangecorrelation potential).

The semimetallic Group V elements display a wealth of correlated electron
phenomena due to a small indirect band overlap that leads to relatively small,
but equal, numbers of holes and electrons at the Fermi energy with high
mobility. Their electronic bonding characteristics produce a unique crystal
structure, the rhombohedral A7 structure, which accommodates lone pairs on each
site. Here we show that the A7 structure can display chemical ordering of Sb
and As, which were previously thought to mix randomly. Our structural
characterization of the compound SbAs is performed by singlecrystal and
highresolution synchrotron xray diffraction, and neutron and xray pair
distribution function analysis. All leastsquares refinements indicate ordering
of Sb and As, resulting in a GeTetype structure without inversion symmetry.
Hightemperature diffraction studies reveal an ordering transition around 550
K. Transport and infrared reflectivity measurements, along with
firstprinciples calculations, confirm that SbAs is a semimetal, albeit with a
direct band separation larger than that of Sb or As. Because even subtle
substitutions in the semimetals, notably Bi_{1x}Sb_x, can open semiconducting
energy gaps, a further investigation of the interplay between chemical ordering
and electronic structure on the A7 lattice is warranted.

A pair of magnetic atoms with canted spins Sa, Sb can give rise to an
electric dipole moment P. Several forms for the behavior of such a moment have
appeared in the theoretical literature, some of which have been invoked to
explain experimental results found in various multiferroic materials. The forms
specifically are P1 ~ R x (Sa x Sb); P2 ~ Sa x Sb, and P3 ~ Sa (R . Sa)  Sb (R
. Sb), where R is the relative position of the atoms and Sa, Sb are unit
vectors. To unify and generalize these various forms we consider P as the most
general quadratic function of the spin components that vanishes whenever Sa and
Sb are collinear, i.e. we consider the most general expressions that require
spin canting. The study reveals new forms. We generalize to the vector P,
Moriya's symmetry considerations regarding the (scalar) DzyaloshinskiiMoriya
energy D. Sa x Sb (which led to restrictions on D). This provides a rigorous
symmetry argument which shows that P1 is allowed no matter how high the
symmetry of the atoms plus environment, and gives restrictions for all other
contributions. The analysis leads to the suggestion of terms omitted in the
existing microscopic models, suggests a new mechanism behind the
ferroelectricity found in the 'proper screw structure' of CuXO2, X=Fe, Cr, and
predicts an unusual antiferroelectric ordering in the antiferromagnetically and
ferroelectrically ordered phase of RbFe(MoO4)2.

The ground state phase diagram is determined exactly for the frustrated
classical Heisenberg model plus nearestneighbor biquadratic exchange
interactions on a 2dimensional lattice. A square and a rhombicsymmetry
version are considered. There appear ferromagnetic, incommensuratespiral,
"upupdowndown" (uudd) and canted ferromagnetic states, a nonspiral coplanar
state that is an ordered vortex lattice, plus a noncoplanar ordered state (a
"conical vortex lattice"). In the rhombic case, which adds biquadratic terms to
the Heisenberg model used widely for insulating manganites, the uudd state
found is the Etype state observed; this along with accounting essentially for
the variety of ground states found in these materials, shows that this model
probably contains the longsought mechanism behind the uudd state.

Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great
interest for infrared devices and hightemperature thermoelectric applications.
A deeper understanding of the atomic and electronic structure of these
materials is crucial for explaining, predicting, and optimizing their
properties, and to suggest new materials for better performance. In this work,
we present our firstprinciples studies of the energy bands associated with
various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and
impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that
monovalent and trivalent impurity atoms tend to come close to one another and
form impurityrich clusters, and the electronic structure of the host materials
is strongly perturbed by the impurities. There are impurityinduced bands
associated with the trivalent impurities that split off from the
conductionband bottom with large shifts towards the valenceband top. This is
due to the interaction between the $p$ states of the trivalent impurity cation
and the divalent anion which tends to drive the systems towards metallicity.
The introduction of monovalent impurities (in the presence of trivalent
impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in
SnTe) the effect of the trivalent impurities. One, therefore, can tailor the
band gap and band structure near the band gap (hence transport properties) by
choosing the type of impurity and its concentration or tuning the
monovalent/trivalent ratio. Based on the calculated band structures, we are
able to explain qualitatively the measured transport properties of the whole
class of PbTe, SnTe, and GeTebased bulk thermoelectrics.

We discuss the mechanism responsible for the observed improvement in the
structural properties of In doped GaSe, a layered material of great current
interest. Formation energy calculations show that by tuning the Fermi energy,
In can substitute for Ga or can go as an interstitial charged
defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that
$\text{In}_{\text{i}}^{\text{3+}}$ dramatically increases the shear stiffness
of GaSe, explaining the observed enhancement in the rigidity of In doped
pGaSe. The mechanism responsible for rigidity enhancement discussed here is
quite general and applicable to a large class of layered solids with weak
interlayer bonding.

Interesting magnetic structure found experimentally in a series of manganites
RMnO$_3$, where R is a rare earth, was explained, ostensibly, by Kimura et al,
in terms of a classical Heisenberg model with an assumed set of exchange
parameters, nearestneighbor and nextnearestneighbor interactions, $J_n$.
They calculated a phase diagram as a function of these parameters for the
ground state, in which the important "upupdowndown" or Ephase occurs for
finite ratios of the $J_n$. In this Comment we show that this state does not
occur for such ratios; the error is traced to an incorrect method for
minimizing the energy. The correct phase diagram is given. We also point out
that the finite temperature phase diagram presented there is incorrect.

We have studied the nature of the surface charge distribution in CeTe3. This
is a simple, cleavable, layered material with a robust onedimensional
incommensurate charge density wave (CDW). Scanning tunneling microscopy (STM)
has been applied on the exposed surface of a cleaved single crystal. At 77 K,
the STM images show both the atomic lattice of surface Te atoms arranged in a
square net and the CDW modulations oriented at 45 degrees with respect to the
Te net. Fourier transform of the STM data shows Te square lattice peaks, and
peaks related to the CDW oriented at 45 degrees to the lattice peaks. In
addition, clear peaks are present, consistent with subsurface structure and
wave vector mixing effects. These data are supported by electronic structure
calculations, which show that the subsurface signal most likely arises from a
lattice of Ce atoms situated 2.53 angstroms below the surface Te net.

We use different types of determinantal HartreeFock (HF) wave functions to
calculate variational bounds for the ground state energy of spinhalf fermions
in volume V_0, with mass m, electric charge zero, and magnetic moment mu, which
are interacting through long range magnetic dipoledipole interaction. We find
that at high densities when the average inter particle distance r_0 becomes
small compared to the magnetic length r_m, a ferromagnetic state with
spheroidal occupation function, involving quadrupolar deformation, gives a
lower energy compared to the variational energy for the uniform paramagnetic
state. This HF variational bound to the ground state energy turns out to have a
lower energy than our earlier calculation in which instead of a determinantal
wavefunction we had used a positive semidefinite single particle density
matrix operator whose eigenvalues, having quadrupolar deformation, were allowed
to take any value from 0 to 1. This system is of course still unstable towards
infinite density collapse, but we show here explicitly that a suitable short
range repulsive (hard core) interaction of strength U_0 and range a can stop
this collapse.The existence of a stable high density ferromagnetic state with
spheroidal occupation function is possible as long as the ratio of hardcore
and magnetic dipole coupling constants is not very small compared to 1.

A 2site 2electron model with s and pstates on each site, having
constrained average sitespins S_a, S_b, with angle theta between them, simpler
than the previous closelyrelated model of Katsura et al (KNB), is considered.
Intrasite Coulomb repulsion and intersite spinorbit coupling V_(SO) are
included. The ground state has an electric dipole moment pi consistent with the
result of KNB, pi proportional to R x (S_a x S_b) = f, R connecting the two
sites, and application to a spiral leads to ferroelectric polarization with
direction f, also in agreement with the previous result. However, the present
result shows the expected behavior pi goes to 0 as V_(SO) goes to 0, unlike the
previous one.

Understanding the detailed electronic structure of deep defect states in
narrow bandgap semiconductors has been a challenging problem. Recently,
selfconsistent ab initio calculations within density functional theory (DFT)
using supercell models have been successful in tackling this problem. In this
paper, we carry out such calculations in PbTe, a wellknown narrow bandgap
semiconductor, for a large class of defects: cationic and anionic
substitutional impurities of different valence, and cationic and anionic
vacancies. For the cationic defects, we study a series of compounds
RPb2n1Te2n, where R is vacancy or monovalent, divalent, or trivalent atom; for
the anionic defects, we study compounds MPb2nTe2n1, where M is vacancy, S, Se
or I. We find that the density of states (DOS) near the top of the valence band
and the bottom of the conduction band get significantly modified for most of
these defects. This suggests that the transport properties of PbTe in the
presence of impurities can not be interpreted by simple carrier doping
concepts, confirming such ideas developed from qualitative and
semiquantitative arguments.

Ab initio electronic structure calculations based on gradient corrected
density functional theory were performed on a class of novel quaternary
compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high
temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find
that resonant states appear near the top of the valence and bottom of the
conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be
understood in terms of modified TeAg(Sb) bonds. Electronic structure near the
gap depends sensitively on the microstructural arrangements of AgSb atoms,
suggesting that large ZT values may originate from the nature of these ordering
arrangements.

Scanning tunneling spectroscopy images of Bi$_2$Se$_3$ doped with excess Bi
reveal electronic defect states with a striking shape resembling clover leaves.
With a simple tightbinding model we show that the geometry of the defect
states in Bi$_2$Se$_3$ can be directly related to the position of the
originating impurities. Only the Bi defects at the Se sites five atomic layers
below the surface are experimentally observed. We show that this effect can be
explained by the interplay of defect and surface electronic structure.