• ### Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides(1602.01525)

Jan. 22, 2017 cond-mat.mtrl-sci
The recent discovery of extreme magnetoresistance in LaSb introduced lanthanum monopnictides as a new platform to study topological semimetals (TSMs). In this work we report the discovery of extreme magnetoresistance in LaBi, confirming lanthanum monopnictides as a promising family of TSMs. These binary compounds with the simple rock-salt structure are ideal model systems to search for the origin of extreme magnetoresistance. Through a comparative study of magnetotransport effects in LaBi and LaSb, we construct a triangular temperature-field phase diagram that illustrates how a magnetic field tunes the electronic behavior in these materials. We show that the triangular phase diagram can be generalized to other topological semimetals with different crystal structures and different chemical compositions. By comparing our experimental results to band structure calculations, we suggest that extreme magnetoresistance in LaBi and LaSb originates from a particular orbital texture on their qasi-2D Fermi surfaces. The orbital texture, driven by spin-orbit coupling, is likely to be a generic feature of various topological semimetals.
• ### Measurement of the topological surface state optical conductance in bulk-insulating Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_2$S single crystals(1610.00803)

Topological surface states have been extensively observed via optics in thin films of topological insulators. However, in typical thick single crystals of these materials, bulk states are dominant and it is difficult for optics to verify the existence of topological surface states definitively. In this work, we studied the charge dynamics of the newly formulated bulk-insulating Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_2$S crystal by using time-domain terahertz spectroscopy. This compound shows much better insulating behavior than any other bulk-insulating topological insulators reported previously. The transmission can be enhanced an amount which is 5$\%$ of the zero-field transmission by applying magnetic field to 7 T, an effect which we believe is due to the suppression of topological surface states. This suppression is essentially independent of the thicknesses of the samples, showing the two-dimensional nature of the transport. The suppression of surface states in field allows us to use the crystal slab itself as a reference sample to extract the surface conductance, mobility, charge density and scattering rate. Our measurements set the stage for the investigation of phenomena out of the semi-classical regime, such as the topological magneto-electric effect.
• ### Tuning the electronic and the crystalline structure of LaBi by pressure(1607.03560)

July 13, 2016 cond-mat.supr-con
Extreme magnetoresistance (XMR) in topological semimetals is a recent discovery which attracts attention due to its robust appearance in a growing number of materials. To search for a relation between XMR and superconductivity, we study the effect of pressure on LaBi taking advantage of its simple structure and simple composition. By increasing pressure we observe the disappearance of XMR followed by the appearance of superconductivity at P=3.5 GPa.The suppression of XMR is correlated with increasing zero-field resistance instead of decreasing in-field resistance. At higher pressures, P=11 GPa, we find a structural transition from the face center cubic lattice to a primitive tetragonal lattice in agreement with theoretical predictions. We discuss the relationship between extreme magnetoresistance, superconductivity, and structural transition in LaBi.
• ### 3D Dirac cone carrier dynamics in Na3Bi and Cd3As2(1605.02145)

July 5, 2016 cond-mat.str-el
Optical measurements and band structure calculations are reported on 3D Dirac materials. The electronic properties associated with the Dirac cone are identified in the reflectivity spectra of Cd$_3$As$_2$ and Na$_3$Bi single crystals. In Na$_3$Bi, the plasma edge is found to be strongly temperature dependent due to thermally excited free carriers in the Dirac cone. The thermal behavior provides an estimate of the Fermi level $E_F=25$ meV and the z-axis Fermi velocity $v_z = 0.3 \text{ eV} \AA$ associated with the heavy bismuth Dirac band. At high energies above the $\Gamma$-point Lifshitz gap energy, a frequency and temperature independent $\epsilon_2$ indicative of Dirac cone interband transitions translates into an ab-plane Fermi velocity of $3 \text{ eV} \AA$. The observed number of IR phonons rules out the $\text{P}6_3\text{/mmc}$ space group symmetry but is consistent with the $\text{P}\bar{3}\text{c}1$ candidate symmetry. A plasmaron excitation is discovered near the plasmon energy that persists over a broad range of temperature. The optical signature of the large joint density of states arising from saddle points at $\Gamma$ is strongly suppressed in Na$_3$Bi consistent with band structure calculations that show the dipole transition matrix elements to be weak due to the very small s-orbital character of the Dirac bands. In Cd$_3$As$_2$, a distinctive peak in reflectivity due to the logarithmic divergence in $\epsilon_1$ expected at the onset of Dirac cone interband transitions is identified. The center frequency of the peak shifts with temperature quantitatively consistent with a linear dispersion and a carrier density of $n=1.3\times10^{17}\text{ cm}^{-3}$. The peak width gives a measure of the Fermi velocity anisotropy of $10\%$, indicating a nearly spherical Fermi surface. The lineshape gives an upper bound estimate of 7 meV for the potential fluctuation energy scale.
• ### Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance(1510.06931)

Time reversal symmetry (TRS) protects the metallic surface modes of topological insulators (TIs). The transport signature of robust metallic surface modes of TIs is a plateau that arrests the exponential divergence of the insulating bulk with decreasing temperature. This universal behavior is observed in all TI candidates ranging from Bi2Te2Se to SmB6. Recently, several topological semimetals (TSMs) have been found that exhibit extreme magnetoresistance (XMR) and TI universal resistivity behavior revealed only when breaking TRS, a regime where TIs theoretically cease to exist. Among these new materials, TaAs and NbP are nominated for Weyl semimetal due to their lack of inversion symmetry, Cd3As2 is nominated for Dirac semimetal due to its linear band crossing at the Fermi level, and WTe2 is nominated for resonant compensated semimetal due to its perfect electron-hole symmetry. Here we introduce LaSb, a simple rock-salt structure material without broken inversion symmetry, without perfect linear band crossing, and without perfect electron-hole symmetry. Yet LaSb portrays all the exotic field induced behaviors of the aforementioned semimetals in an archetypal fashion. It shows (a) the universal TI resistivity with a plateau at 15 K, revealed by a magnetic field, (b) ultrahigh mobility of carriers in the plateau region, (c) quantum oscillations with a non-trivial Berry phase, and (d) XMR of about one million percent at 9 tesla rivaled only by WTe2 and NbP. Due to its dramatic simplicity, LaSb is the ideal model system to formulate a theoretical understanding of the exotic consequences of breaking TRS in TSMs.
• ### Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties(1508.03655)

A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.
• ### Lifshitz transition and van Hove singularity in a Topological Dirac Semimetal(1502.06917)

March 11, 2015 cond-mat.mes-hall
A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a topological change in the constant energy contour as a function of the binding energy, featuring a Lifshitz point, which is missing in a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of graphene). Our results identify the first example of a band saddle point singularity in 3D Dirac materials. This is in contrast to its 2D analogs such as graphene and the helical Dirac surface states of a topological insulator. The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz point along its crystalline rotational axis away from the Kramers point serves as a decisive signature for the symmetry-protected nature of the Dirac semimetal's topological groundstate.
• ### Au9+ swift heavy ion irradiation of Zn[CS(NH2)2]3SO4 crystal: Crystalline perfection and optical properties(1408.2781)

Aug. 12, 2014 cond-mat.mtrl-sci
The single crystal of tris(thiourea)zinc sulphate (Zn[CS(NH2)2]3SO4) was irradiated by 150 MeV Au9+ swift heavy ions and analyzed in comparison with pure crystal for crystalline perfection and optical properties. The Fourier transform infrared and x-ray powder diffraction inferred that swift ions lead the disordering and breaking of molecular bonds in lattice without formation of new structural phases. High resolution X-ray diffraction (HRXRD) revealed the abundance of point defects, and formation of mosaics and low angle grain boundaries in the irradiated region of crystal. The swift ion irradiation found to affect the lattice vibrational modes and functional groups significantly. The defects induced by heavy ions act as the color centers and resulted in enhance of photoluminescence emission intensity. The optical transparency and band gap found to be decreased.
• ### Enhancement of SHG efficiency by urea doping in ZTS single crystals and its correlation with crystalline perfection revealed by Kurtz powder and high-resolution X-ray diffraction methods(1403.4656)

March 19, 2014 cond-mat.mtrl-sci
Enhancement of second harmonic generation (SHG) efficiency and the correlation between crystalline perfection and SHG with urea doping on tristhioureazinc(II) sulphate (ZTS) single crystals have been investigated. ZTS is a potential semiorganic nonlinear optical (NLO) material. Pure and urea doped single crystals of ZTS have been successfully grown by slow evaporation solution technique (SEST). Presence of dopants has been confirmed and analyzed by Fourier transform infrared (FTIR) spectrometer. The influence of urea doping at different concentrations on the crystalline perfection has been thoroughly assessed by high resolution X-ray diffractometry (HRXRD). HRXRD studies revealed that the crystals could accomodate urea in ZTS up to some critical concentration without any deterioration in the crystalline perfection. Above this concentration, very low angle structural grain boundaries were developed and it seems, the excess urea above the critical concentration was segregated along the grain boundaries. At very high doping concentrations, the crystals were found to contain mosaic blocks. The SHG effeiciency has been studied by using Kurtz powder technique. The relative SHG efficiency of the crystals was found to be increased substantially with the increase of urea concentration. The correlation found between the crystalline perfection and SHG efficiency was discussed.
• ### Growth by SR method and characterization of bis(thiourea)zinc(II) chloride single crystals(1403.4848)

March 19, 2014 cond-mat.mtrl-sci
Large size single crystals of bis(thiourea)zinc(II) chloride (BTZC), a potential nonlinear optical material, have been grown successfully by the Sankaranarayanan Ramasamy (SR) method. Powder X-ray diffraction and Fourier transform infrared analyses confirmed the material of the grown crystal. Thermal stability was assessed by the thermogravimetric differential thermal analysis. The high-resolution X-ray diffraction and dielectric measurements indicate that the crystal grown by the SR method has good crystalline perfection and low density of defects.
• ### Remarkable enhancement in crystalline perfection, Second Harmonic Generation Efficiency, Optical Transparency and laser damage threshold in KDP crystals by L-threonine doping(1403.4869)

March 19, 2014 cond-mat.mtrl-sci
Effect of L-threonine (LT) doping on crystalline perfection, second harmonic generation (SHG) efficiency, optical transparency and laser damage threshold (LDT) in potassium dihydrogen phosphate (KDP) crystals grown by slow evaporation solution technique (SEST) has been investigated. The influence of doping on growth rate and morphology of the grown crystals has also been studied. Powder X-ray diffraction data confirms the crystal structure of KDP and shows a systematic variation in intensity of diffraction peaks in correlation with morphology due to varying LT concentration. No extra phase formation was observed which is further confirmed by Fourier Transform (FT) Raman studies. High-resolution X-ray diffraction curves indicate that crystalline perfection has been improved to a great extent at low concentrations with a maximum perfection at 1 mol% doping. At higher concentrations (5 to 10 mol%), it is slightly reduced due to excess incorporation of dopants at the interstitial sites of the crystalline matrix. LDT has been increased considerably with increase in doping concentration, whereas SHG efficiency was found to be maximum at 1 mol% in correlation with crystalline. The optical transparency for doped crystals has been increased as compared to that of pure KDP with a maximum value at 1 mol% doping.
• ### Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se(1403.3870)

A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.
• ### Observation of a bulk 3D Dirac multiplet, Lifshitz transition, and nestled spin states in Na3Bi(1312.7624)

Symmetry or topology protected Dirac fermion states in two and three dimensions constitute novel quantum systems that exhibit exotic physical phenomena. However, none of the studied spin-orbit materials are suitable for realizing bulk multiplet Dirac states for the exploration of interacting Dirac physics. Here we present experimental evidence, for the first time, that the compound Na3Bi hosts a bulk spin-orbit Dirac multiplet and their interaction or overlap leads to a Lifshitz transition in momentum space - a condition for realizing interactions involving Dirac states. By carefully preparing the samples at a non-natural-cleavage (100) crystalline surface, we uncover many novel electronic and spin properties in Na3Bi by utilizing high resolution angle- and spin-resolved photoemission spectroscopy measurements. We observe two bulk 3D Dirac nodes that locate on the opposite sides of the bulk zone center point $\Gamma$, which exhibit a Fermi surface Lifshitz transition and a saddle point singularity. Furthermore, our data shows evidence for the possible existence of theoretically predicted weak 2D nontrivial spin-orbit surface state with helical spin polarization that are nestled between the two bulk Dirac cones, consistent with the theoretically calculated (100) surface-arc-modes. Our main experimental observation of a rich multiplet of Dirac structure and the Lifshitz transition opens the door for inducing electronic instabilities and correlated physical phenomena in Na3Bi, and paves the way for the engineering of novel topological states using Na3Bi predicted in recent theory.