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List of contributions from the Cherenkov Telescope Array (CTA) Consortium
presented at the 6th International Symposium on High-Energy Gamma-Ray Astronomy
(Gamma 2016), July 11-15, 2016, in Heidelberg, Germany.
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This work is on the Physics of the B Factories. Part A of this book contains
a brief description of the SLAC and KEK B Factories as well as their detectors,
BaBar and Belle, and data taking related issues. Part B discusses tools and
methods used by the experiments in order to obtain results. The results
themselves can be found in Part C.
Please note that version 3 on the archive is the auxiliary version of the
Physics of the B Factories book. This uses the notation alpha, beta, gamma for
the angles of the Unitarity Triangle. The nominal version uses the notation
phi_1, phi_2 and phi_3. Please cite this work as Eur. Phys. J. C74 (2014) 3026.
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List of contributions from the CTA Consortium presented at the 34th
International Cosmic Ray Conference, 30 July - 6 August 2015, The Hague, The
Netherlands.
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Using a new variant of photoelectron spectroscopy, we measure the homogeneous
near-nodal pairing ($\Delta$) and pair-breaking self-energy ($\Gamma_S$)
processes for a wide range of doping levels of
Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$. For all samples we find that the pairing
extends above the superconducting transition T$_c$ to a scale T$_{Pair}$ that
is distinct from the antinodal pseudogap scale T$^*$ and near but slightly
above T$_c$. We find that $\Delta$ and T$_{Pair}$ are related with a strong
coupling ratio 2$\Delta$ /k$_B$T$_{Pair}\approx6$ across the entire doping
phase diagram, i.e. independent of the effects of antinodal pseudogaps or
charge-density waves.
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We have developed a cryogenic distillation system to purify
Hydrogen-Deuteride (HD) gas for a polarized HD target in LEPS experiments at
SPring-8. A small amount of ortho-H$_2$ ($\sim$0.01%) in the HD gas plays an
important role in efficiently polarizing the HD target. Since there are
1$\sim$5% impurities of H$_2$ and D$_2$ in commercially available HD gases, it
is inevitable that the HD gas is purified up to $\sim$99.99%. The distillation
system has a cryogenic pot (17$\sim$21 K) containing many small stainless steel
cells called Heli-pack. Commercial HD gas with an amount of 5.2 mol is fed into
the pot. We carried out three distillation runs by changing temperatures (17.5
K and 20.5 K) and gas extraction speeds (1.3 ml/min and 5.2 ml/min). The
extracted gas was analyzed by using a gas analyzer system combining a
quadrupole mass spectrometer with a gas chromatograph. The HD gas of 1 mol with
a purity better than 99.99% has been successfully obtained. The effective NTS
(Number of Theoretical Stages), which is an indicator of the distillator
performances, is obtained as 37.2$\pm$0.6. This value is in reasonable
agreement with a designed value of 37.9. The HD target is expected to be
efficiently polarized under a well-controlled condition by doping an optimal
amount of ortho-H$_2$ to the purified HD gas.
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The ab-plane optical conductivity of eleven single crystals, belonging to the
families Sr2-xCuO2Cl2, Y1-xCaxBa2Cu3O6, Bi2Sr2-xLaxCuO6, and Bi2Sr2CaCu2O8 has
been measured with hole concentrations p between 0 and 0.18, and for 6 K < T <
500 K to obtain an infrared picture of the p,T phase diagram of the Cu-O plane.
At extreme dilution (p = 0.005), a narrow peak is observed at 1570 cm-1 (195
meV), that we assign to a single-hole bound state. For increasing doping, that
peak broadens into a far-infrared (FIR) band whose low-energy edge sets the
insulating gap. The insulator-to-metal transition (IMT) occurs when the
softening of the FIR band closes the gap thus evolving into a Drude term. In
the metallic phase, a multi-band analysis identifies a mid-infrared band which
weakly depends on temperature and softens for increasing p, while the
extended-Drude analysis leads to an optical scattering rate larger than the
frequency, as found in other cuprates. The infrared spectral weight W(T) is
consistent with a Fermi liquid renormalized by strong correlations, provided
that the T^4 term of the Sommerfeld expansion is included above 300 K. In the
superconducting phase, the optical response of single-layer Bi2Sr2-xLaxCuO6 at
optimum doping is similar to that of the corresponding optimally-doped bilayer
Bi2Sr2CaCu2O8.
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A portable NMR polarimeter system has been developed to measure the
polarization of a polarized Hydrogen-Deuteride (HD) target for hadron
photoproduction experiments at SPring-8. The polarized HD target is produced at
the Research Center for Nuclear Physics (RCNP), Osaka university and is
transported to SPring-8. The HD polarization should be monitored at both
places. We have constructed the portable NMR polarimeter system by replacing
the devices in the conventional system with the software system with PCI
eXtensions for Instrumentation (PXI). The weight of the NMR system is downsized
from 80 kg to 7 kg, and the cost is reduced to 25%. We check the performance of
the portable NMR polarimeter system. The signal-to-noise (S/N) ratio of the NMR
signal for the portable system is about 50% of that for the conventional NMR
system. This performance of the portable NMR system is proved to be compatible
with the conventional NMR system for the polarization measurement.
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A gas analyzer system has been developed to analyze Hydrogen-Deuteride (HD)
gas for producing frozen-spin polarized HD targets, which are used for hadron
photoproduction experiments at SPring-8. Small amounts of ortho-H$_{2}$ and
para-D$_{2}$ gas mixtures ($\sim$0.01%) in the purified HD gas are a key to
realize a frozen-spin polarized target. In order to obtain reliable
concentrations of these gas mixtures in the HD gas, we produced a new gas
analyzer system combining two independent measurements with the gas
chromatography and the QMS. The para-H$_{2}$, ortho-H$_{2}$, HD, and D$_{2}$
are separated using the retention time of the gas chromatography and the
mass/charge. It is found that the new gas analyzer system can measure small
concentrations of $\sim$0.01% for the otho-H$_2$ and D$_2$ with good S/N
ratios.
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High-performance $n$-type organic field-effect transistors were developed
with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and
1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport
measurements show that these devices reproducibly operate in ambient atmosphere
with negligible gate threshold voltage and mobility values as high as 5.0
cm$^2$/Vs. These mobility values are essentially identical to those measured in
the same devices without the ionic liquid, using vacuum or air as the gate
dielectric. Our results indicate that the ionic-liquid and $n$-type organic
semiconductor interfaces are suitable to realize high-quality $n$-type organic
transistors operating at small gate voltage, without sacrificing electron
mobility.
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The optical conductivity and the spectral weight W(T) of two superconducting
cuprates at optimum doping, Bi2Sr2-xLaxCuO6 and Bi2Sr2CaCu2O8, have been first
measured up to 500 K. Above 300 K, W(T) deviates from the usual T2 behavior in
both compounds, even though the zero-frequency extrapolation of the optical
conductivity remains larger than the Ioffe-Regel limit. The deviation is
surprisingly well described by the T4 term of the Sommerfeld expansion, but its
coefficients are enhanced by strong correlation. This renormalization is due to
strong correlation, as shown by the good agreement with dynamical mean field
calculations.
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We investigated transport properties of organic heterointerfaces formed by
single-crystals of two organic donor-acceptor molecules,
tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane
(TCNQ). Whereas the individual crystals have un-measurably high resistance, the
interface exhibits a resistivity of few tens of MegaOhm with a temperature
dependence characteristic of a small gap semiconductor. We analyze the
transport properties based on a simple band-diagram that naturally accounts for
our observations in terms of charge transfer between two crystals. Together
with the recently discovered tetrathiafulvalene (TTF)-TCNQ interfaces, these
results indicate that single-crystal organic heterostructures create new
electronic systems with properties relevant to both fundamental and applied
fields.
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The Earth's lower mantle is believed to be composed mainly of (Mg,Fe)SiO3
perovskite, with lesser amounts of (Mg,Fe)O and CaSiO3). But it has not been
possible to explain many unusual properties of the lowermost 150 km of the
mantle (the D" layer) with this mineralogy. Here, using ab initio simulations
and high-pressure experiments, we show that at pressures and temperatures of
the D" layer, MgSiO3 transforms from perovskite into a layered CaIrO3-type
post-perovskite phase. The elastic properties of the post-perovskite phase and
its stability field explain several observed puzzling properties of the D"
layer: its seismic anisotropy, the strongly undulating shear-wave discontinuity
at its top and possibly the anticorrelation between shear and bulk sound
velocities.
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Direct measurements of the superconducting superfluid on the surface of
vacuum-cleaved Bi2Sr2CaCu2O8(BSCCO) samples are reported. These measurements
are accomplished via Josephson tunneling into the sample using a scanning
tunneling microscope (STM) equipped with a superconducting tip. The spatial
resolution of the STM of lateral distances less than the superconducting
coherence length allows it to reveal local inhomogeneities in the pair
wavefunction of the BSCCO. Instrument performance is demonstrated first with
Josephson measurements of Pb films followed by the layered superconductor
NbSe2. The relevant measurement parameter, the Josephson ICRN product, is
discussed within the context of both BCS superconductors and the high
transition temperature superconductors. The local relationship between the ICRN
product and the quasiparticle density of states (DOS) gap are presented within
the context of phase diagrams for BSCCO. Excessive current densities can be
produced with these measurements and have been found to alter the local DOS in
the BSCCO. Systematic studies of this effect were performed to determine the
practical measurement limits for these experiments. Alternative methods for
preparation of the BSCCO surface are also discussed.
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We have performed angle-resolved photoemission and core-level x-ray
photoemission studies of the single-layer cuprate
Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ (Bi2201) and revealed the doping
evolution of the electronic structure from the lightly-doped to optimally-doped
regions. We have observed the formation of the dispersive quasi-particle band,
evolution of the Fermi ``arc'' into the Fermi surface and the shift of the
chemical potential with hole doping as in other cuprates. The doping evolution
in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC),
where a rapid chemical potential shift toward the lower Hubbard band of the
parent insulator has been observed, but is quite different from that in
La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where the chemical potential does not
shift, yet the dispersive band and the Fermi arc/surface are formed around the
Fermi level already in the lightly-doped region. The (underlying) Fermi surface
shape and band dispersions are quantitatively analyzed using tight-binding fit,
and the deduced next-nearest-neighbor hopping integral $t'$ also confirm the
similarity to Na-CCOC and the difference from LSCO.
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By measuring the Hall coefficient R_H up to 1000 K in La_2CuO_4,
Pr_{1.3}La_{0.7}CuO_4, and La_{2-x}Sr_xCuO_4 (LSCO), we found that the
temperature (T) dependence of R_H in LSCO for x = 0 - 0.05 at high temperature
undoubtedly signifies a gap over which the charge carriers are thermally
activated, which in turn indicates that in lightly-doped cuprates strong charge
fluctuations are present at high temperature and the carrier number is not a
constant. At higher doping (x = 0.08 - 0.21), the high-temperature R_H(T)
behavior is found to be qualitatively the same, albeit with a weakened
temperature dependence, and we attempt to understand its behavior in terms of a
phenomenological two-carrier model where the thermal activation is considered
for one of the two species. Despite the crude nature of the model, our analysis
gives a reasonable account of R_H both at high temperature and at 0 K for a
wide range of doping, suggesting that charge fluctuations over a gap remain
important at high temperature in LSCO deep into the superconducting doping
regime. Moreover, our model gives a perspective to understand the seemingly
contradicting high-temperature behavior of R_H and the in-plane resistivity
near optimum doping in a consistent manner. Finally, we discuss possible
implications of our results on such issues as the scattering-time separation
and the large pseudogap.
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The Hall coefficient (R_H) is investigated along the in-plane direction for
carefully prepared La_2-x_Sr_x_CuO_4_ thin films from x=0.08 to x=0.40. It is
found that R_H becomes almost temperature independent around room temperature
for x >= 0.24, and its sign smoothly changes from positive to negative between
x = 0.28 and 0.32, showing contrasting behavior to previously reported results.
This result indicates that the carrier can be doped smoothly across the hole-
to electron-dominant regions. According to the sign change of R_H,
superconductivity disappears for x >= 0.32 films, which suggests that a
positive R_H is one of the necessary conditions for superconductivity in p-type
cuprates.
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We report systematic, high-precision measurements of the low-T (down to 70
mK) thermal conductivity \kappa of YBa_{2}Cu_{3}O_{y}, La_{2-x}Sr_{x}CuO_{4}
and Bi_{2}Sr_{2}CaCu_{2}O_{8+\delta}. Careful examinations of the Zn- and
hole-doping dependences of the residual thermal conductivity \kappa_{0}/T, as
well as the in-plane anisotropy of \kappa_{0}/T in
Bi_{2}Sr_{2}CaCu_{2}O_{8+\delta}, indicate a breakdown of the universal thermal
conductivity, a notable theoretical prediction for d-wave superconductors. Our
results point to an important role of electronic inhomogeneities, that are not
considered in the standard perturbation theory for thermal conductivity, in the
under- to optimally-doped regime.
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We investigate the hole dynamics in two prototypical high temperature
superconducting systems: La$_{2-x}$Sr$_{x}$CuO$_{4}$ and YBa$_{2}$Cu$_{3}%
$O$_{y}$ using a combination of DC transport and infrared spectroscopy. By
exploring the effective spectral weight obtained with optics in conjunction
with DC Hall results we find that the transition to the Mott insulating state
in these systems is of the "vanishing carrier number" type since we observe no
substantial enhancement of the mass as one proceeds to undoped phases. Further,
the effective mass remains constant across the entire underdoped regime of the
phase diagram. We discuss the implications of these results for the
understanding of both transport phenomena and pairing mechanism in high-T$_{c}$
systems.
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Using high-resolution magnetometry we have investigated in detail the
magnetization $M$ above the critical temperature $T_c$ in $\rm
Bi_2Sr_2CaCu_2O_{8+\delta}$. In a broad range of temperature $T$ above $T_c$,
we find that $M(T,H)$ is strongly non-linear in the field $H$. We show that as
$T\to T_c$, the susceptibility $\chi(T,H)$ diverges to very large values ($\chi
\to$ -1) if measured in weak $H$. In addition, $M(H)$ displays an anomalous
non-analytic form $M\sim H^{1/\delta}$ in weak fields with a strongly
$T$-dependent exponent $\delta(T)$. These features strongly support the
proposal that, above $T_c$, the pair condensate survives to support significant
London rigidity.
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We report time-resolved measurements of the photoinduced change in
reflectivity, Delta R, in the Bi2Sr2Ca(1-y)Dy(y)Cu2O(8+delta) (BSCCO) system of
cuprate superconductors as a function of hole concentration. We find that the
kinetics of quasiparticle decay and the sign of Delta R both change abruptly
where the superconducting transition temperature Tc is maximal. These
coincident changes suggest that a sharp transition in quasiparticle dynamics
takes place precisely at optimal doping in the BSCCO system.
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We propose that Resistivity Curvature Mapping (RCM) based on the in-plane
resistivity data is a useful way to objectively draw an electronic phase
diagrams of high-T_c cuprates, where various crossovers are important. In
particular, the pseudogap crossover line can be conveniently determined by RCM.
We show experimental phase diagrams obtained by RCM for
Bi_{2}Sr_{2-z}La_{z}CuO_{6+\delta}, La_{2-x}Sr_{x}CuO_{4}, and
YBa_{2}Cu_{3}O_{y}, and demonstrate the universal nature of the pseudogap
crossover. Intriguingly, the electronic crossover near optimum doping depicted
by RCM appears to occur rather abruptly, suggesting that the quantum critical
regime, if exists, must be very narrow.
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Although the Hall coefficient R_H is an informative transport property of
metals and semiconductors, its meaning in the cuprate superconductors has been
ambiguous because of its unusual characteristics. Here we show that a
systematic study of R_H in La_{2-x}Sr_{x}CuO_{4} single crystals over a wide
doping range establishes a qualitative understanding of its peculiar evolution,
which turns out to reflect a two-component nature of the electronic structure
caused by an unusual development of the Fermi surface recently uncovered by
photoemission experiments.
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We used angle-resolved photoemission spectroscopy to study the shadow Fermi
surface in one layer Bi2Sr1.6La0.4CuO6+delta and two layer
(Bi,Pb)2Sr2CaCu2O8+delta. We find the shadow band to have the same peakwidth
and dispersion as the main band. In addition, the shadow band/main band
intensity ratio is found to be binding energy independent. Consequently, it is
concluded that the shadow bands in Bi-based HTSC do not originate from
antiferromagnetic interactions but have a structural origin.
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Using angle-resolved photoemission spectroscopy with ultimate momentum
resolution we have explicitly resolved the bilayer splitting in the nodal
direction of Bi-2212. The splitting is observed in a wide doping range and,
within the experimental uncertainty, its size does not depend on doping. The
value of splitting derived from the experiment is in good agreement with that
from band structure calculations which implies the absence of any electronic
confinement to single planes within bilayers of Bi-2212. Other consequences of
this finding are also discussed.
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We measure the magnetic-field dependence of the c-axis resistivity,
\rho_c(H), in a series of Bi_{2}Sr_{2-x}La_xCuO_{6+\delta} (BSLCO) single
crystals for a wide range of doping using pulsed magnetic fields up to 58 T.
The behavior of \rho_c(H) is examined in light of the recent determination of
the upper critical field H_{c2} for this material using Nernst effect
measurements. We find that the peak in \rho_c(H) shows up at a field H_p that
is much lower than H_{c2} and there is no discernable feature in \rho_c(H) at
H_{c2}. Intriguingly, H_p shows a doping dependence similar to that of T_c, and
there is an approximate relation k_{B}T_c \simeq {1/2}g\mu_{B}H_p. Moreover, we
show that the data for the lowest-T_c sample can be used to estimate the
pseudogap closing field H_{pg}, but the method to estimate H_{pg} proposed by
Shibauchi {\it et al.} [Phys. Rev. Lett. {\bf 86}, 5763 (2001)] must be
modified to apply to the BSLCO system.