
We performed an angleresolved photoemission spectroscopy study of
BaMn$_2$As$_2$ and BaMn$_2$Sb$_2$, which are isostructural to the parent
compound BaFe$_2$As$_2$ of the 122 family of ferropnictide superconductors. We
show the existence of a strongly $k_z$dependent band gap with a minimum at the
Brillouin zone center, in agreement with their semiconducting properties.
Despite the halffilling of the electronic 3$d$ shell, we show that the band
structure in these materials is almost not renormalized from the KohnSham
bands of density functional theory. Our photon energy dependent study provides
evidence for Mnpnictide hybridization, which may play a role in tuning the
electronic correlations in these compounds.

Topological insulators (TIs) host novel states of quantum matter,
distinguished from trivial insulators by the presence of nontrivial conducting
boundary states connecting the valence and conduction bulk bands. Up to date,
all the TIs discovered experimentally rely on the presence of either time
reversal or symmorphic mirror symmetry to protect massless Diraclike boundary
states. Very recently, it has been theoretically proposed that several
materials are a new type of TIs protected by nonsymmorphic symmetry, where
glidemirror can protect novel exotic surface fermions with hourglassshaped
dispersion. However, an experimental confirmation of such new nonsymmorphic TI
(NSTI) is still missing. Using angleresolved photoemission spectroscopy, we
reveal that such hourglass topology exists on the (010) surface of crystalline
KHgSb while the (001) surface has no boundary state, which is fully consistent
with firstprinciples calculations. We thus experimentally demonstrate that
KHgSb is a NSTI hosting hourglass fermions. By expanding the classification of
topological insulators, this discovery opens a new direction in the research of
nonsymmorphic topological properties of materials.

Twodimensional (2D) topological insulators (TIs) with a large bulk bandgap
are promising for experimental studies of the quantum spin Hall effect and for
spintronic device applications. Despite considerable theoretical efforts in
predicting largegap 2D TI candidates, only few of them have been
experimentally verified. Here, by combining scanning tunneling
microscopy/spectroscopy and angleresolved photoemission spectroscopy, we
reveal that the top monolayer of ZrTe5 crystals hosts a large band gap of ~100
meV on the surface and a finite constant densityofstates within the gap at
the step edge. Our firstprinciples calculations confirm the topologically
nontrivial nature of the edge states. These results demonstrate that the top
monolayer of ZrTe5 crystals is a largegap 2D TI suitable for topotronic
applications at high temperature.