• The Compact Linear Collider (CLIC) is a multi-TeV high-luminosity linear e+e- collider under development. For an optimal exploitation of its physics potential, CLIC is foreseen to be built and operated in a staged approach with three centre-of-mass energy stages ranging from a few hundred GeV up to 3 TeV. The first stage will focus on precision Standard Model physics, in particular Higgs and top-quark measurements. Subsequent stages will focus on measurements of rare Higgs processes, as well as searches for new physics processes and precision measurements of new states, e.g. states previously discovered at LHC or at CLIC itself. In the 2012 CLIC Conceptual Design Report, a fully optimised 3 TeV collider was presented, while the proposed lower energy stages were not studied to the same level of detail. This report presents an updated baseline staging scenario for CLIC. The scenario is the result of a comprehensive study addressing the performance, cost and power of the CLIC accelerator complex as a function of centre-of-mass energy and it targets optimal physics output based on the current physics landscape. The optimised staging scenario foresees three main centre-of-mass energy stages at 380 GeV, 1.5 TeV and 3 TeV for a full CLIC programme spanning 22 years. For the first stage, an alternative to the CLIC drive beam scheme is presented in which the main linac power is produced using X-band klystrons.
• ### Pressure-induced high-Tc superconducting phase in FeSe: correlation between anion height and Tc(1002.1832)

Feb. 10, 2010 cond-mat.str-el
In this study, we performed high-pressure electrical resistivity measurements of polycrystalline FeSe in the pressure range of 1-16.0 GPa at temperatures of 4-300 K. A precise evaluation of Tc from zero-resistivity temperatures revealed that Tc shows a slightly distorted dome-shaped curve, with maximum Tc (30 K) at 6 GPa, which is lower than a previously reported Tc value (~37 K). With the application of pressure, the temperature dependence of resistivity above Tc changes dramatically to a linear dependence; a non-Fermi-liquid-like "high-Tc" phase appears above 3 GPa. We found a striking correlation between Tc and the Se height: the lower the Se height, the more enhanced is Tc. Moreover, this relation is broadly applicable to other iron pnictides, strongly indicating that high-temperature superconductivity can appear only around the optimum anion height (~1.38A). On the basis of these results, we suggest that the anion height should be considered as a key determining factor of Tc of iron-based superconductors containing various anions.
• ### AC susceptibility study of superconducting aluminium-doped silicon carbide(0908.0622)

Aug. 5, 2009 cond-mat.supr-con
In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon carbide was successfully found to superconduct by means of resistivity and DC magnetization measurements. In contrast to boron-doped silicon carbide, the aluminum doped system is treated as a type-II superconductor because of the absence of an hysteresis in data measured upon decreasing and increasing temperature in finite magnetic fields. In this paper, results of a recent AC susceptibility study on aluminum-doped silicon carbide are presented. In higher applied DC magnetic fields and at low temperatures, a weak indication of supercooling with a width of a few mK is found. This supports the conclusion that aluminum-doped silicon carbide is located near to the border between type-I and type-II superconductivity, as pointed out in a recent theoretical work, too.
• ### Specific heat of aluminium-doped superconducting silicon carbide(0906.0069)

May 30, 2009 cond-mat.supr-con
The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.
• ### Superconductivity in heavily boron-doped silicon carbide(0810.0056)

Oct. 1, 2008 cond-mat.supr-con
The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.
• ### Superconductivity of hexagonal heavily-boron doped silicon carbide(0808.0231)

Aug. 2, 2008 cond-mat.supr-con
In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:B) and recently in the stochiometric ''mixture'' of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I superconductivity in contrast to the type-II superconductors C:B and Si:B. Here we will focus on the specific heat of two different superconducting samples of boron-doped SiC. One of them contains cubic and hexagonal SiC whereas the other consists mainly of hexagonal SiC without any detectable cubic phase fraction. The electronic specific heat in the superconducting state of both samples SiC:B can be described by either assuming a BCS-type exponentional temperature dependence or a power-law behavior.
• ### Soft-phonon-driven superconductivity in CaAlSi as seen by inelastic x-ray scattering(0802.2765)

March 18, 2008 cond-mat.supr-con
Inelastic x-ray scattering and $ab$-$initio$ calculation are applied to investigate the lattice dynamics and electron-phonon coupling of the ternary silicide superconductor CaAlSi ($P/bar{6}m2$). A soft c-axis polarized mode is clearly observed along the $/Gamma$-$A$-$L$ symmetry directions. The soft mode is strongly anharmonically broadened at room temperature, but, at 10 K, its linewidth narrows and becomes in good agreement with calculations of linear electron-phonon coupling. This establishes a coherent description of the detailed phonon properties in this system and links them clearly and consistently with the superconductivity.
• ### Specific heat and electronic states of superconducting boron-doped silicon carbide(0803.1026)

March 7, 2008 cond-mat.supr-con
The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related ''mixed'' system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to non-superconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two ''parent'' materials C:B and Si:B.
• ### The enhancement of superconducting transition temperature in yttrium sesquicarbide system, Y2C3, with the maximum Tc of Tc=18K(cond-mat/0311517)

Nov. 22, 2003 cond-mat.supr-con
We discovered the enhancement of superconducting transition temperature, Tc, in yttrium sesquicarbide system with the maximum Tc of Tc=18K and their superconducting properties were discussed. The crystal structure of Y2C3 is the body-centered cubic (Pu2C3-type) structure, and the lattice parameters are varied with the heat treatment conditions. The magnetization (M-H) curves of this compound showed a typical type-II superconducting behavior, and the lower critical field, Hc1(0), is 3.5mT. The Tc-value in this system was changed in the range from 15K to 18K, depending on the sintering conditions. In a previous report by Krupka et al., maximum Tc in Y2C3 was observed at 11.5K by the magnetic measurements. So we successfully synthesized the new high-Tc phase in Y2C3.
• ### Electronic structure of MgB$_2$: X-ray emission and absorption studies(cond-mat/0103487)

Measurements of x-ray emission and absorption spectra of the constituents of MgB$_2$ are presented. The results obtained are in good agreement with calculated x-ray spectra, with dipole matrix elements taken into account. The comparison of x-ray emission spectra of graphite, AlB$_2$, and MgB$_2$ in the binding energy scale supports the idea of charge transfer from $\sigma$ to $\pi$ bands, which creates holes at the top of the bonding $\sigma$ bands and drives the high-T$_c$
• ### Micro-Raman scattering investigation of MgB2 and RB2 (R=Al, Mn, Nb and Ti)(cond-mat/0106147)

June 8, 2001 cond-mat.supr-con
Phonon spectra have been investigated by micro-Raman scattering from 290 to 20K. New peaks at 500 and 674 cm-1 appear below 250K in MgB2. These peaks are explained by the Fermi resonance, where Raman-active E2g intereacts with the overtone of E1u due to anhamonicity. Raman spectra of the isostructural RB2 (R=Al, Mn, Nb and Ti) have been also measured at 290K. The line width of E2g phonon of the superconductor MgB2 and NbB2 shows the broader than that of the non-superconductors. It is found that the anharmonicity of phonons is important for the superconductivity for MgB2.
• ### Optical measurements of the superconducting gap in MgB2(cond-mat/0103164)

April 26, 2001 cond-mat.supr-con
Far-infrared reflectivity studies on the polycrystalline intermetallic compound MgB_2 with a superconducting transition temperature T_c=39 K were performed at temperatures 20 K to 300 K. We observe a significant raise of the superconducting-to-normal state reflectivity ratio below 70 cm^{-1}, with a maximum at about 25-30 cm^{-1}, which gives a lower estimate of the superconducting gap of 2\Delta(0)\approx3-4 meV.
• ### High-Resolution Photoemission Study of MgB2(cond-mat/0103079)

We have performed high-resolution photoemission spectroscopy on MgB2 and observed opening of a superconducting gap with a narrow coherent peak. We found that the superconducting gap is s-like with the gap value of 4.5 meV at 15 K. The temperature dependence (15 - 40 K) of gap value follows well the BCS form, suggesting that 2Delta/kBTc at T=0 is about 3. No pseudogap behavior is observed in the normal state. The present results strongly suggest that MgB2 is categorized into a phonon-mediated BCS superconductor in the weak-coupling regime.
• ### Compressibility of the MgB2 Superconductor(cond-mat/0102507)

Feb. 28, 2001 cond-mat.supr-con
Considerable excitement has been caused recently by the discovery that the binary boride system with stoichiometry MgB2 is superconducting at the remarkably high temperature of 39 K (1). This potentially opens the way to even higher Tc values in a new family of superconductors with unexpectedly simple composition and structure. The simplicity in the electronic and crystal structures could allow the understanding of the physics of high-Tc superconductivity without the presence of the multitude of complicated features, associated with the cuprates. Synchrotron X-ray diffraction was used to measure the isothermal compressibility of MgB2, revealing a stiff tightly-packed incompressible solid with only moderate bonding anisotropy between intra- and inter-layer directions. These results, combined with the pressure evolution of the superconducting transition temperature, Tc establish its relation to the B and Mg bonding distances over a broad range of values.
• ### Evidence for Strong-coupling S-wave Superconductivity in MgB2 :11B NMR Study(cond-mat/0102334)

Feb. 19, 2001 cond-mat.supr-con
We have investigated a gap structure in a newly-discovered superconductor, MgB2 through the measurement of 11B nuclear spin-lattice relaxation rate, ^{11}(1/T_1). ^{11}(1/T_1) is proportional to the temperature (T) in the normal state, and decreases exponentially in the superconducting (SC) state, revealing a tiny coherence peak just below T_c. The T dependence of 1/T_1 in the SC state can be accounted for by an s-wave SC model with a large gap size of 2\Delta /k_BT_c \sim 5 which suggests to be in a strong-coupling regime.