
Condensed matter systems have now become a fertile ground to discover
emerging topological quasiparticles with symmetry protected modes. While many
studies have focused on Fermionic excitations, the same conceptual framework
can also be applied to bosons yielding new types of topological states.
Motivated by the recent theoretical prediction of doubleWeyl phonons in
transition metal monosilicides [Phys. Rev. Lett. 120, 016401 (2018)], we
directly measured the phonon dispersion in paritybreaking FeSi using inelastic
xray scattering. By comparing the experimental data with theoretical
calculations, we make the first observation of doubleWeyl points in FeSi,
which will be an ideal material to explore emerging Bosonic excitations and its
topologically nontrivial properties.

We report a polarized Raman scattering study of nonsymmorphic topological
insulator KHgSb with hourglasslike electronic dispersion. Supported by
theoretical calculations, we show that the lattice of the previously assigned
space group $P6_3/mmc$ (No. 194) is unstable in KHgSb. While we observe one of
two calculated Raman active E$_{2g}$ phonons of space group $P6_3/mmc$ at room
temperature, an additional A$_{1g}$ peak appears at 99.5 ~cm$^{1}$ upon
cooling below $T^*$ = 150 K, which suggests a lattice distortion. Several weak
peaks associated with twophonon excitations emerge with this lattice
instability. We also show that the sample is very sensitive to high temperature
and high laser power, conditions under which it quickly decomposes, leading to
the formation of Sb. Our firstprinciples calculations indicate that space
group $P6_3mc$ (No. 186), corresponding to a vertical displacement of the Sb
atoms with respect to the Hg atoms that breaks the inversion symmetry, is lower
in energy than the presumed $P6_3/mmc$ structure and preserves the glide plane
symmetry necessary to the formation of hourglass fermions.

We performed a Raman scattering study of Na$_2$Ti$_2$As$_2$O. We identified a
symmetry breaking structural transition at around $T_s = 150$ K, which matches
a large bump in the electrical resistivity. Several new peaks are detected
below that transition. Combined with firstprinciples calculations, our
polarizationdependent measurements suggest a charge instability driven lattice
distortion along one of the TiO bonds that breaks the 4fold symmetry and more
than doubles the unit cell.

We report on the selective creation of spin filltering regions in
nonmagnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We
demonstrate by photoluminescence spectroscopy that spin dependent recombination
(SDR) ratios as high as 240% can be achieved in the implanted areas. The
optimum implantation conditions for the most efficient SDR is determined by the
systematic analysis of different ion doses spanning four orders of magnitude.
The application of a weak external magnetic field leads to a sizeable
enhancement of the SDR ratio from the spin polarization of the nuclei
surrounding the polarized implanted paramagnetic defects.