
The success of black phosphorus in fast electronic and photonic devices is
hindered by its rapid degradation in presence of oxygen. Orthorhombic tin
selenide is a representative of group IVVI binary compounds that are robust,
isoelectronic, and share the same structure with black phosphorus. We measured
the band structure of SnSe and found highly anisotropic valence bands that form
several valleys having fast dispersion within the layers and negligible
dispersion across. This is exactly the band structure desired for efficient
thermoelectric generation where SnSe has shown a great promise.

Highresolution angleresolved photoelectron spectroscopy is used to examine
the electronic band structure of FeTe$_{0.5}$Se$_{0.5}$ near the Brillouin zone
center. A consistent separation of the $\alpha_{1}$ and $\alpha_{2}$ bands is
observed with little $k_{z}$ dependence of the $\alpha_{1}$ band.
Firstprinciples calculations for bulk and thin films demonstrate that the
antiferromagnetic coupling between the Fe atoms and hybridizationinduced
spinorbit effects lifts the degeneracy of the Fe $d_{xz}$ and $d_{yz}$
orbitals at the zone center leading to orbital ordering. These experimental and
computational results provide a natural microscopic basis for the nematicity
observed in the Febased superconductors.

We used lowenergy, momentumresolved inelastic electron scattering to study
surface collective modes of the threedimensional topological insulators
Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3x}$Se$_{x}$. Our goal was to
identify the "spin plasmon" predicted by Raghu and coworkers [S. Raghu, et
al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary
collective mode is a surface plasmon arising from the bulk, free carrers in
these materials. This excitation dominates the spectral weight in the bosonic
function of the surface, $\chi "(\textbf{q},\omega)$, at THz energy scales, and
is the most likely origin of a quasiparticle dispersion kink observed in
previous photoemission experiments. Our study suggests that the spin plasmon
may mix with this other surface mode, calling for a more nuanced understanding
of optical experiments in which the spin plasmon is reported to play a role.

We report a new, cleavable, strongtopologicalmetal, Zr2Te2P, which has the
same tetradymitetype crystal structure as the topological insulator Bi2Te2Se.
Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap
between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two
Dirac dispersions are predicted: one is a surfaceoriginated Dirac cone
protected by timereversal symmetry (TRS), while the other is a bulkoriginated
and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV
energy range. A third surface TRSprotected Dirac cone is predicted, and
observed using ARPES, making Zr2Te2P the first system to realize TRSprotected
Dirac cones at M points. The high anisotropy of this Dirac cone is similar to
the one in the hypothetical Dirac semimetal BiO2. We propose that if EF can be
tuned into the pseudogap where the Dirac dispersions exist, it may be possible
to observe ultrahigh carrier mobility and large magnetoresistance in this
material.

A longstanding issue in topological insulator research has been to find a
material that provides an ideal platform for characterizing topological surface
states without interference from bulk electronic states and can reliably be
fabricated as bulk crystals. This material would be a bulk insulator, have a
surface state Dirac point energy well isolated from the bulk valence and
conduction bands, have high surface state electronic mobility, and be growable
as large, high quality bulk single crystals. Here we show that this major
materials obstacle in the field is overcome by crystals of lightly Sndoped
Bi1.1Sb0.9Te2S (SnBSTS) grown by the Vertical Bridgeman method, which we
characterize here via angleresolved photoemission spectroscopy, scanning
tunneling microscopy, transport studies of the bulk and surface states, and
Xray diffraction and Raman scattering. We present this new material as a bulk
topological insulator that can be reliably grown and studied in many
laboratories around the world.

A threedimensional strongtopologicalinsulator or semimetal hosts
topological surface states which are often said to be gapless so long as
timereversal symmetry is preserved. This narrative can be mistaken when
surface state degeneracies occur away from timereversalinvariant momenta. The
mirrorinvariance of the system then becomes essential in protecting the
existence of a surface Fermi surface. Here we show that such a case exists in
the strongtopologicalsemimetal Bi$_4$Se$_3$. Angleresolved photoemission
spectroscopy and \textit{ab initio} calculations reveal partial gapping of
surface bands on the Bi$_2$Se$_3$termination of Bi$_4$Se$_3$(111), where an 85
meV gap along $\bar{\Gamma}\bar{K}$ closes to zero toward the mirrorinvariant
$\bar{\Gamma}\bar{M}$ azimuth. The gap opening is attributed to an interband
spinorbit interaction that mixes states of opposite spinhelicity.

The chiral magnetic effect is the generation of electric current induced by
chirality imbalance in the presence of magnetic field. It is a macroscopic
manifestation of the quantum anomaly in relativistic field theory of chiral
fermions (massless spin $1/2$ particles with a definite projection of spin on
momentum)  a dramatic phenomenon arising from a collective motion of
particles and antiparticles in the Dirac sea. The recent discovery of Dirac
semimetals with chiral quasiparticles opens a fascinating possibility to study
this phenomenon in condensed matter experiments. Here we report on the first
observation of chiral magnetic effect through the measurement of
magnetotransport in zirconium pentatelluride, ZrTe_5. Our angleresolved
photoemission spectroscopy experiments show that this material's electronic
structure is consistent with a 3D Dirac semimetal. We observe a large negative
magnetoresistance when magnetic field is parallel with the current. The
measured quadratic field dependence of the magnetoconductance is a clear
indication of the chiral magnetic effect. The observed phenomenon stems from
the effective transmutation of Dirac semimetal into a Weyl semimetal induced by
the parallel electric and magnetic fields that represent a topologically
nontrivial gauge field background.

To achieve and utilize the most exotic electronic phenomena predicted for the
surface states of 3D topological insulators (TI),it is necessary to open a
"Diracmass gap" in their spectrum by breaking timereversal symmetry. Use of
magnetic dopant atoms to generate a ferromagnetic state is the most widely used
approach. But it is unknown how the spatial arrangements of the magnetic dopant
atoms influence the Diracmass gap at the atomic scale or, conversely, whether
the ferromagnetic interactions between dopant atoms are influenced by the
topological surface states. Here we image the locations of the magnetic (Cr)
dopant atoms in the ferromagnetic TI
Cr$_{0.08}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.92}$Te$_3$. Simultaneous visualization of
the Diracmass gap $\Delta(r)$ reveals its intense disorder, which we
demonstrate directly is related to fluctuations in $n(r)$, the Cr atom areal
density in the termination layer. We find the relationship of surfacestate
Fermi wavevectors to the anisotropic structure of $\Delta(r)$ consistent with
predictions for surface ferromagnetism mediated by those states. Moreover,
despite the intense Diracmass disorder, the anticipated relationship
$\Delta(r)\propto n(r)$ is confirmed throughout, and exhibits an
electrondopant interaction energy $J^*$=145$meV\cdot nm^2$. These observations
reveal how magnetic dopant atoms actually generate the TI mass gap locally and
that, to achieve the novel physics expected of timereversalsymmetry breaking
TI materials, control of the resulting Diracmass gap disorder will be
essential.

We show that a small number of intentionally introduced defects can be used
as a spectroscopic tool to amplify quasiparticle interference in 2HNbSe$_{2}$,
that we measure by scanning tunneling spectroscopic imaging. We show from the
momentum and energy dependence of the quasiparticle interference that Fermi
surface nesting is inconsequential to charge density wave formation in
2HNbSe$_{2}$. We demonstrate that by combining quasiparticle interference data
with additional knowledge of the quasiparticle band structure from angle
resolved photoemission measurements, one can extract the wavevector and energy
dependence of the important electronic scattering processes thereby obtaining
direct information both about the fermiology and the interactions. In
2HNbSe$_{2}$, we use this combination to show that the important
nearFermisurface electronic physics is dominated by the coupling of the
quasiparticles to soft mode phonons at a wave vector different from the CDW
ordering wave vector.

The electronic structure basis of the extremely large magnetoresistance in
layered nonmagnetic tungsten ditelluride has been investigated by
angleresolved photoelectron spectroscopy. Hole and electron pockets of
approximately the same size were found at the Fermi level, suggesting that
carrier compensation should be considered the primary source of the effect. The
material exhibits a highly anisotropic, quasi onedimensional Fermi surface
from which the pronounced anisotropy of the magnetoresistance follows. A change
in the Fermi surface with temperature was found and a highdensityofstates
band that may take over conduction at higher temperatures and cause the
observed turnon behavior of the magnetoresistance in WTe$_2$ was identified.

Proximityinduced superconductivity in a 3D topological insulator represents
a new avenue for observing zeroenergy Majorana fermions inside vortex cores.
Relatively small gaps and low transition temperatures of conventional swave
superconductors put the hard constraints on these experiments. Significantly
larger gaps and higher transition temperatures in cuprate superconductors might
be an attractive alternative to considerably relax these constraints, but it is
not clear whether the proximity effect would be effective in heterostructures
involving cuprates and topological insulators. Here, we present angleresolved
photoemission studies of thin Bi2Se3 films grown insitu on optimally doped
Bi2Sr2CaCu2O8 substrates that show the absence of proximityinduced gaps on the
surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results
suggest that the superconducting proximity effect between a cuprate
superconductor and a topological insulator is strongly suppressed, likely due
to a very short coherence length along the caxis, incompatible crystal and
pairing symmetries at the interface, small size of the topological surface
state Fermi surface and adverse effects of a strong spinorbit coupling in the
topological material.

A comparative study of the properties of topological insulator Bi2Te2Se (BTS)
crystals grown by the vertical Bridgeman method is described. Two defect
mechanisms that create acceptor impurities to compensate for the native ntype
carriers are compared: Bi excess, and light Sn doping. Both methods yield low
carrier concentrations and an np crossover over the length of the grown
crystal boules, but lower carrier concentrations and higher resistivities are
obtained for the Sndoped crystals, which reach carrier concentrations as low
as 8 x 1014 cm3. Further, the temperature dependent resistivities for the
Sndoped crystals display strongly activated behavior at high temperatures,
with a characteristic energy of half the bulk band gap. The (001) cleaved
Sndoped BTS crystals display high quality Shubnikov de Haas (SdH) quantum
oscillations due to the topological surface state electrons. Angle resolved
photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy
(EF) for the Sndoped crystals falls cleanly in the surface states with no
interference from the bulk bands, that the Dirac point for the surface states
lies approximately 60 meV below the top of the bulk valence band maximum, and
allows for a determination of the bulk and surface state carrier concentrations
as a function of Energy near EF. Electronic structure calculations that compare
Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity,
with a localized impurity band that acts as a charge buffer occurring inside
the bulk band gap. We propose that the special resonant level character of Sn
in BTS gives rise to the exceptionally low carrier concentrations and activated
resistivities observed.

Properties of many layered materials, including copper and ironbased
superconductors, topological insulators, graphite and epitaxial graphene can be
manipulated by inclusion of different atomic and molecular species between the
layers via a process known as intercalation. For example, intercalation in
graphite can lead to superconductivity and is crucial in the working cycle of
modern batteries and supercapacitors. Intercalation involves complex diffusion
processes along and across the layers, but the microscopic mechanisms and
dynamics of these processes are not well understood. Here we report on a novel
mechanism for intercalation and entrapment of alkaliatoms under epitaxial
graphene. We find that the intercalation is adjusted by the van der Waals
interaction, with the dynamics governed by defects anchored to graphene
wrinkles. Our findings are relevant for the future design and application of
graphenebased nanostructures. Similar mechanisms can also play a role for
intercalation of layered materials.

The guarding game is a game in which several cops try to guard a region in a
(directed or undirected) graph against Robber. Robber and the cops are placed
on the vertices of the graph; they take turns in moving to adjacent vertices
(or staying), cops inside the guarded region, Robber on the remaining vertices
(the robberregion). The goal of Robber is to enter the guarded region at a
vertex with no cop on it. The problem is to determine whether for a given graph
and given number of cops the cops are able to prevent Robber from entering the
guarded region. Fomin et al. [Fomin, Golovach, Hall, Mihalak, Vicari, Widmayer:
How to Guard a Graph? Algorithmica 61(4), 839856 (2011)] proved that the
problem is NPcomplete when the robberregion is restricted to a tree. Further
they prove that is it PSPACEcomplete when the robberregion is restricted to a
directed acyclic graph, and they ask about the problem complexity for arbitrary
graphs. In this paper we prove that the problem is Ecomplete for arbitrary
directed graphs.

Topological crystalline insulators represent a novel topological phase of
matter in which the surface states are protected by discrete point
groupsymmetries of the underlying lattice. Rocksalt leadtinselenide alloy
is one possible realization of this phase which undergoes a topological phase
transition upon changing the lead content. We used scanning tunneling
microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe
the surface states on (001) Pb$_{1x}$Sn$_{x}$Se in the topologically
nontrivial (x=0.23) and topologically trivial (x=0) phases. We observed
quasiparticle interference with STM on the surface of the topological
crystalline insulator and demonstrated that the measured interference can be
understood from ARPES studies and a simple band structure model. Furthermore,
our findings support the fact that Pb$_{0.77}$Sn$_{0.23}$Se and PbSe have
different topological nature.

Gapless surface states on topological insulators are protected from elastic
scattering on nonmagnetic impurities which makes them promising candidates for
lowpower electronic applications. However, for widespread applications, these
states should remain coherent and significantly spin polarized at ambient
temperatures. Here, we studied the coherence and spinstructure of the
topological states on the surface of a model topological insulator, Bi2Se3, at
elevated temperatures in spin and angleresolved photoemission spectroscopy. We
found an extremely weak broadening and essentially no decay of spin
polarization of the topological surface state up to room temperature. Our
results demonstrate that the topological states on surfaces of topological
insulators could serve as a basis for room temperature electronic devices.

25 years after discovery of hightemperature superconductivity (HTSC) in
La$_{2x}$Ba$_x$CuO$_4$ (LBCO), the HTSC continues to pose some of the biggest
challenges in materials science. Cuprates are fundamentally different from
conventional superconductors in that the metallic conductivity and
superconductivity are induced by doping carriers into an antiferromagnetically
ordered correlated insulator. In such systems, the normal state is expected to
be quite different from a LandauFermi liquid  the basis for the conventional
BCS theory of superconductivity. The situation is additionally complicated by
the fact that cuprates are susceptible to charge/spin ordering tendencies,
especially in the lowdoping regime. The role of such tendencies on the
phenomenon of superconductivity is still not completely clear. Here, we present
studies of the electronic structure in cuprates where the superconductivity is
strongly suppressed as static spin and charge orders or stripes develop near
the doping level of $x =1/8$ and outside of the superconducting dome, for
$x<0.055$. We discuss the relationship between the stripes, superconductivity,
pseudogap and the observed electronic excitations in these materials.

We report spin and angleresolved photoemission studies of a topological
insulator from the infinitely adaptive series between elemental Bi and
Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural
superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the
inclusion of S allows the growth of large crystals, with the formula
Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the
Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating
Bi or Se termination. The resulting terraces, observed by photoemission
electron microscopy, create avenues suitable for the study of onedimensional
topological physics. The electronic structure, determined by spin and angle
resolved photoemission spectroscopy, shows the existence of a surface state
that forms a large, hexagonally shaped Fermi surface around the $\Gamma$ point
of the surface Brillouin zone, with the spin structure indicating that this
material is a topological insulator.

Gapless surface states on topological insulators are protected from elastic
scattering on nonmagnetic impurities which makes them promising candidates for
lowpower electronic applications. However, for widespread applications, these
states should have to remain coherent at ambient temperatures. Here, we studied
temperature dependence of the electronic structure and the scattering rates on
the surface of a model topological insulator, Bi$_2$Se$_3$, by high resolution
angleresolved photoemission spectroscopy. We found an extremely weak
broadening of the topological surface state with temperature and no anomalies
in the state's dispersion, indicating exceptionally weak electronphonon
coupling. Our results demonstrate that the topological surface state is
protected not only from elastic scattering on impurities, but also from
scattering on lowenergy phonons, suggesting that topological insulators could
serve as a basis for room temperature electronic devices.

Heavily electrondoped surfaces of Bi$_2$Se$_3$ have been studied by spin and
angle resolved photoemission spectroscopy. Upon doping, electrons occupy a
series of {\bf k}split pairs of states above the topological surface state.
The {\bf k}splitting originates from the large spinorbit coupling and results
in a Rashbatype behavior, unequivocally demonstrated here via the spin
analysis. The spin helicities of the lowest laying Rashba doublet and the
adjacent topological surface state alternate in a leftrightleft sequence.
This spin configuration sets constraints to interband scattering channels
opened by electron doping. A detailed analysis of the scattering rates suggests
that intraband scattering dominates with the largest effect coming from
warping of the Fermi surface.

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points:
(1) the estimate of charge transfer from Li to graphene layers in LiC$_6$ in
our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D)
character of the electronic structure in bulk LiC$_6$; (2) our main claim that
the superconductivity in graphite intercalation compounds (GICs) is
graphenesheetdriven is therefore invalid.

Diraclike surface states on surfaces of topological insulators have a chiral
spin structure that suppresses backscattering and protects the coherence of
these states in the presence of nonmagnetic scatterers. In contrast, magnetic
scatterers should open the back scattering channel via the spinflip processes
and degrade the state's coherence. We present angleresolved photoemission
spectroscopy studies of the electronic structure and the scattering rates upon
adsorption of various magnetic and nonmagnetic impurities on the surface of
Bi$_2$Se$_3$, a model topological insulator. We reveal a remarkable
insensitivity of the topological surface state to both nonmagnetic and
magnetic impurities in the low impurity concentration regime. Scattering
channels open up with the emergence of hexagonal warping in the highdoping
regime, irrespective of the impurity's magnetic moment.

We performed highresolution spin and angleresolved photoemission
spectroscopy studies of the electronic structure and the spin texture on the
surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon
energy, we found that the topological surface state is well separated from the
bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The
spinresolved measurements in that region indicate a very high degree of spin
polarization of the surface state, $\sim 0.75$, much higher than previously
reported. Our results demonstrate that the topological surface state on
Bi$_2$Se$_3$ is highly spin polarized and that the dominant factors limiting
the polarization are mainly extrinsic.

We have performed photoemission studies of the electronic structure in
LiC$_6$ and KC$_8$, a nonsuperconducting and a superconducting graphite
intercalation compound, respectively. We have found that the charge transfer
from the intercalant layers to graphene layers is larger in KC$_8$ than in
LiC$_6$, opposite of what might be expected from their chemical composition. We
have also measured the strength of the electronphonon interaction on the
graphenederived Fermi surface to carbon derived phonons in both materials and
found that it follows a universal trend where the coupling strength and
superconductivity monotonically increase with the filling of graphene
$\pi^{\ast}$ states. This correlation suggests that both graphenederived
electrons and graphenederived phonons are crucial for superconductivity in
graphite intercalation compounds.

We present a combined analysis of neutron scattering and photoemission
measurements on superconducting FeSe(0.5)Te(0.5). The lowenergy magnetic
excitations disperse only in the direction transverse to the characteristic
wave vector (1/2,0,0), whereas the electronic Fermi surface near (1/2,0,0)
appears to consist of four incommensurate pockets. While the spin resonance
occurs at an incommensurate wave vector compatible with nesting, neither
spinwave nor Fermisurfacenesting models can describe the magnetic
dispersion. We propose that a coupling of spin and orbital correlations is key
to explaining this behavior. If correct, it follows that these nematic
fluctuations are involved in the resonance and could be relevant to the pairing
mechanism.