
We demonstrate the ability of an epitaxial semiconductorsuperconductor
nanowire to serve as a fieldeffect switch to tune a superconducting cavity.
Two superconducting gatemon qubits are coupled to the cavity, which acts as a
quantum bus. Using a gate voltage to control the superconducting switch yields
up to a factor of 8 change in qubitqubit coupling between the on and off
states without detrimental effect on qubit coherence. Highbandwidth operation
of the coupling switch on nanosecond timescales degrades qubit coherence.

Coherent operation of gatevoltagecontrolled hybrid transmon qubits
(gatemons) based on semiconductor nanowires was recently demonstrated. Here we
experimentally investigate the anharmonicity in epitaxial InAsAl Josephson
junctions, a key parameter for their use as a qubit. Anharmonicity is found to
be reduced by roughly a factor of two compared to conventional metallic
junctions, and dependent on gate voltage. Experimental results are consistent
with a theoretical model, indicating that Josephson coupling is mediated by a
small number of highly transmitting modes in the semiconductor junction.

Recent experiments have demonstrated superconducting transmon qubits with
semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize
field effect tunability characteristic for semiconductors to allow complete
qubit control using gate voltages, potentially a technological advantage over
conventional fluxcontrolled transmons. Here, we present experiments with a
twoqubit gatemon circuit. We characterize qubit coherence and stability and
use randomized benchmarking to demonstrate singlequbit gate errors below 0.7%
for all gates, including voltagecontrolled $Z$ rotations. We show coherent
capacitive coupling between two gatemons and coherent swap operations. Finally,
we perform a twoqubit controlledphase gate with an estimated fidelity of 91%,
demonstrating the potential of gatemon qubits for building scalable quantum
processors.

We introduce a hybrid qubit based on a semiconductor nanowire with an
epitaxially grown superconductor layer. Josephson energy of the transmonlike
device ("gatemon") is controlled by an electrostatic gate that depletes
carriers in a semiconducting weak link region. Strong coupling to an onchip
microwave cavity and coherent qubit control via gate voltage pulses is
demonstrated, yielding reasonably long relaxation times (0.8 {\mu}s) and
dephasing times (1 {\mu}s), exceeding gate operation times by two orders of
magnitude, in these firstgeneration devices. Because qubit control relies on
voltages rather than fluxes, dissipation in resistive control lines is reduced,
screening reduces crosstalk, and the absence of flux control allows operation
in a magnetic field, relevant for topological quantum information.

Relaxation and dephasing of hole spins are measured in a gatedefined Ge/Si
nanowire double quantum dot using a fast pulsedgate method and dispersive
readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$
exceeds corresponding measurements in IIIV semiconductors by more than an
order of magnitude, as expected for predominately nuclearspinfree materials.
Dephasing is observed to be exponential in time, indicating the presence of a
broadband noise source, rather than Gaussian, previously seen in systems with
nuclearspindominated dephasing.

The distribution of Coulomb blockade peak heights as a function of magnetic
field is investigated experimentally in a GeSi nanowire quantum dot. Strong
spinorbit coupling in this holegas system leads to antilocalization of
Coulomb blockade peaks, consistent with theory. In particular, the peak height
distribution has its maximum away from zero at zero magnetic field, with an
average that decreases with increasing field. Magnetoconductance in the
openwire regime places a bound on the spinorbit length ($l_{so}$ < 20 nm),
consistent with values extracted in the Coulomb blockade regime ($l_{so}$ < 25
nm).