• ### Longitudinal spin Seebeck coefficient: heat flux vs. temperature difference method(1701.03285)

The determination of the longitudinal spin Seebeck effect (LSSE) coefficient is currently plagued by a large uncertainty due to the poor reproducibility of the experimental conditions used in its measurement. In this work we present a detailed analysis of two different methods used for the determination of the LSSE coefficient. We have performed LSSE experiments in different laboratories, by using different setups and employing both the temperature difference method and the heat flux method. We found that the lack of reproducibility can be mainly attributed to the thermal contact resistance between the sample and the thermal baths which generate the temperature gradient. Due to the variation of the thermal resistance, we found that the scaling of the LSSE voltage to the heat flux through the sample rather than to the temperature difference across the sample greatly reduces the uncertainty. The characteristics of a single YIG/Pt LSSE device obtained with two different setups was $(1.143\pm0.007)\cdot 10^{-7}$ Vm/W and $(1.101\pm0.015)\cdot 10^{-7}$ Vm/W with the heat flux method and $(2.313\pm0.017)\cdot 10^{-7}$ V/K and $(4.956\pm0.005)\cdot 10^{-7}$ V/K with the temperature difference method. This shows that systematic errors can be considerably reduced with the heat flux method.
• ### Low energy behaviour of standard model extensions(1603.03660)

March 11, 2016 hep-ph
The integration of heavy scalar fields is discussed in a class of BSM models, containing more that one representation for scalars and with mixing. The interplay between integrating out heavy scalars and the Standard Model decoupling limit is examined. In general, the latter cannot be obtained in terms of only one large scale and can only be achieved by imposing further assumptions on the couplings. Systematic low-energy expansions are derived in the more general, non-decoupling scenario, including mixed tree-loop and mixed heavy-light generated operators. The number of local operators is larger than the one usually reported in the literature.
• An energy scan near the $\tau$ pair production threshold has been performed using the BESIII detector. About $24$ pb$^{-1}$ of data, distributed over four scan points, was collected. This analysis is based on $\tau$ pair decays to $ee$, $e\mu$, $eh$, $\mu\mu$, $\mu h$, $hh$, $e\rho$, $\mu\rho$ and $\pi\rho$ final states, where $h$ denotes a charged $\pi$ or $K$. The mass of the $\tau$ lepton is measured from a maximum likelihood fit to the $\tau$ pair production cross section data to be $m_{\tau} = (1776.91\pm0.12 ^{+0.10}_{-0.13}$) MeV/$c^2$, which is currently the most precise value in a single measurement.
• ### Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films(1207.7312)

The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 900 Celsius degrees) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample.
• ### Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films(1207.7312)

The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 900 Celsius degrees) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample.