• ### Four-point probe measurements using current probes with voltage feedback to measure electric potentials(1709.02383)

We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for BiSbTe$_3$ and Si$(111)-(7\times7)$ samples.
• ### Si(111) strained layers on Ge(111): evidence for c(2x4) domains(1709.00272)

Sept. 1, 2017 cond-mat.mtrl-sci
The tensile strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low energy electron diffraction and first-principles calculations. It is shown that the layers exhibit c(2x4) domains, which are separated by domain walls along <-110> directions. A model structure for the c(2x4) domains is proposed, which shows low formation energy and good agreement with the experimental data. The results of our calculations suggest that Ge atoms are likely to replace Si atoms with dangling bonds on the surface (rest-atoms and adatoms), thus significantly lowering the surface energy and inducing the formation of domain walls. The experiments and calculations demonstrate that when surface strain changes from compressive to tensile, the (111) reconstruction converts from dimer-adatom-stacking fault-based to adatom-based structures.
• ### Scanning tunneling potentiometry implemented into a multi-tip setup by software(1508.07717)

Dec. 7, 2015 cond-mat.mes-hall
We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to \AA\ and \mu V, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ and Si$(111)-(7\times7)$ surfaces.
• A joint measurement is presented of the branching fractions $B^0_s\to\mu^+\mu^-$ and $B^0\to\mu^+\mu^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\to\mu^+\mu^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\to\mu^+\mu^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
• ### CVC and \tau \rightarrow \eta(\eta^\prime)\pi^{-}\pi^{0}\nu_{\tau}(1012.2564)

Dec. 19, 2010 hep-ph, hep-ex
We use experimental data on $e^{+}e^{-} \rightarrow \eta\pi^{+}\pi^{-}$ and $\tau^{-} \to \eta\pi^{-}\pi^{0}\nu_{\tau}$ to test conservation of vector current (CVC) by comparing the predicted hadronic spectrum and branching fraction with the $\tau$ decay data. Based on the corresponding $e^+e^-$ data and CVC, we also calculate the branching fraction of $\tau^{-} \to \eta^\prime\pi^{-}\pi^{0}\nu_{\tau}$ decay.
• ### Suppression of antiferromagnetic correlations by quenched dipole--type impurities(cond-mat/9808235)

Aug. 21, 1998 cond-mat.mtrl-sci
The effect of quenched random ferromagnetic bonds on the antiferromagnetic correlation length of a two--dimensional Heisneberg model is studied, applying the renormalization group method to the classical non--linear sigma model with quenched random dipole moments. It is found that the antiferromagnetic long range order is destroyed for any non--zero concentration, of the dipolar defects, even at zero temperature. Below a line T ~ concentration, the correlation length is independent of T, and decreases exponentially with concentration. At higher temperatures, itdecays exponentially with an effective stiffness constant which decreases with concentration/T. The results are used to estimate the three--dimensional N\'{e}el temperature, which decays linearly with $x$ at small concentrations, and drops precipitously at a critical concentration. These predictions are compared with experiments on doped copper oxides, and are shown to reproduce successfully some of the prominent features of the data.
• ### Suppression of antiferromagnetic correlations by dipole-type impurities in lamellar cuprates(cond-mat/9709056)

Sept. 4, 1997 cond-mat
In doped lamellar cuprates, localized holes create ferromagnetic bonds and cause spin canting similar to that caused by magnetic dipoles. At low temperatures, these dipoles are frozen, behaving like quenched correlated random fields. Renormalization group methods are used to show that such impurities cause a strong reduction of the two-dimensional antiferromagnetic correlations in the non-linear $\sigma$ model, and a related decrease in the three dimensional N\'eel temperature, in quantitative agreement with experiments.