• We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the \emph{light} hole upper valence bands (UVBs) and hitherto undetected \emph{heavy} hole lower valence bands (LVBs) in these materials. An unusual temperature dependent relative movement between these bands leads to a monotonic decrease in the energy separation between their maxima with increasing temperature, which is referred as band convergence and has long been believed to be the driving factor behind extraordinary thermoelectric performances of these compounds at elevated temperatures.
  • We report an in-depth Angle Resolved Photoemission Spectroscopy (ARPES) study on $2H$-TaS$_2$, a canonical incommensurate Charge Density Wave (CDW) system. This study demonstrates that just as in related incommensurate CDW systems, $2H$-TaSe$_2$ and $2H$-NbSe$_2$, the energy gap ($\Delta_{\text{cdw}}\,$) of $2H$-TaS$_2$ is localized along the K-centered Fermi surface barrels and is particle-hole asymmetric. The persistence of $\Delta_{\text{cdw}}\,$ even at temperatures higher than the CDW transition temperature $\it{T}_{\text{cdw}}\,$ in $2H$-TaS$_2$, reflects the similar pseudogap (PG) behavior observed previously in $2H$-TaSe$_2$ and $2H$-NbSe$_2$. However, in sharp contrast to $2H$-NbSe$_2$, where $\Delta_{\text{cdw}}\,$ is non-zero only in the vicinity of a few "hot spots" on the inner K-centered Fermi surface barrels, $\Delta_{\text{cdw}}\,$ in $2H$-TaS$_2$ is non-zero along the entirety of both K-centered Fermi surface barrels. Based on a tight-binding model, we attribute this dichotomy in the momentum dependence and the Fermi surface specificity of $\Delta_{\text{cdw}}\,$ between otherwise similar CDW compounds to the different orbital orientations of their electronic states that are involved in CDW pairing. Our results suggest that the orbital selectivity plays a critical role in the description of incommensurate CDW materials.
  • We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structure of n-, p- type PbTe, PbSe and PbS, which are pre- mier thermoelectric materials. Our ARPES measurements on them provide direct evidence for the light hole upper valence bands (UVBs) and the so-called heavy hole lower valence bands (LVBs), and an unusual temperature dependent relative movement between their band maxima leading to a monotonic decrease in the energy separation between LVBs and UVBs with increase in temperature. This enables convergence of these valence bands and consequently, an effective increase in the valley degeneracy in PbQ at higher temperatures, which has long been speculated to be the driving factor behind their extraordinary thermoelectric performance.